MITSUBISHI IGBT MODULES
CM500HA-34A
●IC ….………………….…….. 500 A
●V
……………..…...….. 1700 V
CES
●Flat base Type
Copper (non-plating) base plate
No accessory (terminal screw) attach
Single
●RoHS Directive compliant
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
CM500HA-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
Dimension in mm
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
E
G
1
INTERNAL CONNECTION
Di1
E
Tr1
C
July-2010
MITSUBISHI IGBT MODULES
CM500HA-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
Symbol Item Conditions Rating Unit
V
Collector-emitter voltage G-E short-circuited 1700 V
CES
V
Gate-emitter voltage C-E short-circuited ±20 V
GES
IC DC, TC=87 °C
I
CRM
P
Total power dissipation TC=25 °C
tot
IE
I
ERM
Collector current
(Note.1)
Emitter current
(Note.1)
(Free wheeling diode forward current)
Pulse, Repetitive
TC=25 °C
Pulse, Repetitive
Tj Junction temperature - -40 ~ +150
T
Storage temperature - -40 ~ +125
stg
V
Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 3500 V
isol
(Note.2)
500
(Note.3)
(Note.2, 4)
(Note.2, 4)
1000
5000 W
500
(Note.3)
1000
A
A
°C
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Min. Typ. Max.
Mt Main terminals M 6 screw 1.96 2.45 2.94
Mt Auxiliary terminals M 4 screw 0.98 1.18 1.47
Ms
Mounting torque
Mounting to heat sink M 6 screw 1.96 2.45 2.94
m Weight - - 480 - g
ec Flatness of base plate On the centerline X, Y
(Note.5)
±0 - +100 μm
Limits
Unit
N·m
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)
Symbol Item Conditions
I
Collector-emitter cut-off current VCE=V
CES
I
Gate-emitter leakage current ±VGE=V
GES
V
Gate-emitter threshold voltage IC=50 mA, VCE=10 V 5.5 7 8.5 V
GE(th)
V
CEsat
C
Input capacitance - - 120
ies
C
Output capacitance - - 14
oes
C
Reverse transfer capacitance
res
Collector-emitter saturation voltage
IC=500 A
V
V
, G-E short-circuited - - 1 mA
CES
, C-E short-circuited - - 3 μA
GES
(Note.6)
, Tj=25 °C - 2.2 3.0
=15 V Tj=125 °C - 2.45 -
GE
=10 V, G-E short-circuited
CE
Min. Typ. Max.
- - 2.6
QG Gate charge VCC=1000 V, IC=500 A, VGE=15 V - 3300 - nC
t
Turn-on delay time - - 900
d(on)
tr Rise time
t
Turn-off delay time - - 700
d(off)
tf Fall time
(Note.1)
VEC
t
rr
Qrr
(Note.1)
(Note.1)
Emitter-collector voltage IE=500 A
Reverse recovery time VCC=1000 V, IE=500 A, VGE=±15 V, - - 650 ns
Reverse recovery charge RG=3.0 Ω, Inductive load - 50 - μC
=1000 V, IC=500 A, VGE=±15 V,
V
CC
=3.0 Ω, Inductive load
R
G
(Note.6)
, G-E short-circuited - 2.3 3.2 V
- - 500
- - 350
Eon Turn-on switching energy per pulse VCC=1000 V, IC=IE=500 A, - 267.8 -
E
Turn-off switching energy per pulse VGE=±15 V, RG=3.0 Ω, - 138.5 -
off
(Note.1)
E
rr
Reverse recovery energy per pulse Tj=125 °C, Inductive load - 98.1 -
rg Internal gate resistance TC=25 °C - 1.0 - Ω
RG External gate resistance - 3.0 - 10 Ω
Limits
Unit
V
nF
ns
mJ
THERMAL RESISTANCE CHARACTERISTICS
Symbol Item Conditions
R
Junction to case, IGBT part - - 25 K/kW
th(j-c)Q
R
th(j-c)D
R
th(c-s)
Thermal resistance
Contact thermal resistance
(Note.2)
(Note.2)
Junction to case, FWDi part - - 42 K/kW
Case to heat sink,
Thermal grease applied
(Note.7)
Min. Typ. Max.
- 20 - K/kW
Limits
2
Unit
July-2010
MITSUBISHI IGBT MODULES
CM500HA-34A
HIGH POWER SWITCHING USE
Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
Note.2: Case temperature (T
just under the chips. (Refer to the figure of chip location)
The heat sink thermal resistance {R
Note.3: Pulse width and repetition rate should be such that the device junction temperature (T
Note.4: Junction temperature (T
Note.5: Base plate flatness measurement point is as in the following figure.
+: Convex
-: Concave
Bottom
Bottom
Note.6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of test circuit)
Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
CHIP LOCATION (Top view)
) and heat sink temperature (Ts) are defined on the each surface of base plate and heat sink
C
} should measure just under the chips.
th(s-a)
) should not increase beyond T
j
Bottom
X
Y
-: Concave
+: Convex
jmax
rating.
) dose not exceed T
j
Dimension in mm, tolerance: ±1 mm
INSULATED TYPE
rating.
jmax
Tr1: IGBT, Di1: FWDi. Each mark points the center position of each chip.
3
July-2010
MITSUBISHI IGBT MODULES
TEST CIRCUIT AND WAVEFORMS
C
VGE=15 V
G
V
Es
E
test circuit
V
CEsat
VCC
iE
Load
vCE
iC
+
i
C
-VGE
R
+V
0 V
-V
G
GE
vGE
GE
Switching characteristics test circuit and waveforms t
I
vCE
CM
CM500HA-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
C
short-
I
C
circuited
V
G
Es
I
E
E
VEC test circuit
v
GE
0 V
〜
〜
90 %
i
0
E
t
=0.5×Irr×t
Q
rr
rr
t
rr
IE
V
CC
i
0 A
t
d(on)
C
〜
〜
90 %
10 %
t
r
t
d(off )
t
f
0 A
Irr
t
, Qrr test waveform
rr
0.5×I
i
i
C
V
CC
ICM
v
CE
E
0 A
IEM
v
EC
t
rr
V
CC
t
0.1×I
0
CM
0.1×VCC
t
ti
IGBT Turn-on switching energy IGBT Turn-off switching energy FWDi Reverse recovery energy
0.1×V
CC
t
i
0.02×I
CM
t0
t0 V
ti
Turn-on, Turn-off switching and Reverse recovery energy test waveforms (integral range)
4
July-2010
MITSUBISHI IGBT MODULES
CM500HA-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
=25 °C
T
1000
(A)
C
COLLECTOR CURRENT I
j
VGE=20 V
15 V
800
600
400
200
0
0246810
13 V
COLLECTOR-EMITTER VOLTAGE V
12 V
CE
11 V
10 V
9 V
8V
(V)
(V)
CEsat
COLLECTOR-EMITTER
SATURATION VOLTAGE V
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
VGE=15 V
4
Tj=125 °C
3
2
1
0
0 200 400 600 800 1000
Tj=25 °C
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
=25 °C
T
10
j
(TYPICAL)
1000
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
8
(V)
CEsat
6
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE V
0
5 101520
GATE-EMITTER VOLTAGE V
Tj=125 °C
IC=1000 A
IC=500 A
(A)
E
Tj=25 °C
IC=200 A
100
EMITTER CURRENT I
10
(V)
GE
5
0.5 1.5 2.5 3.5
EMITTER-COLLECTOR VOLTAGE VEC (V)
July-2010
MITSUBISHI IGBT MODULES
V
10000
1000
100
SWITCHING TIME (ns)
SWITCHING CHARACTERISTICS
=1000 V, VGE=±15 V, RG=3.0 Ω, Tj=125 °C
CC
HALF-BRIDGE
(TYPICAL)
INDUCTIVE LOAD
t
d(off)
tf
t
d(on)
tr
SWITCHING CHARACTERISTICS
V
=1000 V, IC=500 A, VGE=±15 V, Tj=125 °C
CC
10000
1000
SWITCHING TIME (ns)
CM500HA-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
(TYPICAL)
INDUCTIVE LOAD
t
d(off)
t
d(on)
tf
tr
10
10 100 1000
COLLECTOR CURRENT I
(A)
C
100
110
EXTERNAL GATE RESISTANCE RG (Ω)
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
SWITCHING CHARACTERISTICS
HALF-BRIDGE
(TYPICAL)
=1000 V, VGE=±15 V, RG=3.0 Ω, Tj=125 °C
V
CC
INDUCTIVE LOAD, PER PULSE
1000
100
E
off
SWITCHING CHARACTERISTICS
VCC=1000 V, IC/IE=500 A, VGE=±15 V, Tj=125 °C
INDUCTIVE LOAD, PER PULSE
1000
E
on
E
rr
100
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
HALF-BRIDGE
(TYPICAL)
Eon
E
off
Err
10
10 100 1000
COLLECTOR CURRENT I
EMITTER CURRENT I
(A)
E
(A)
C
6
10
1 10
EXTERNAL GATE RESISTANCE R
G
(Ω)
July-2010
MITSUBISHI IGBT MODULES
G-E short-circuited, T
CAPACITANCE (nF)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
1000
100
10
1
CM500HA-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
GATE CHARGE CHARACTERISTICS
(TYPICAL)
=25 °C IC=500 A, Tj=25 °C
j
C
ies
C
oes
C
res
(V)
GE
20
VCC=800 V
15
10
5
GATE-EMITTER VOLTAGE V
VCC=1000 V
0.1
0.1 1 10 100
0
0 1000 2000 3000 4000 5000
COLLECTOR-EMITTER VOLTAGE VCE (V) GATE CHARGE QG (nC)
REVERSE RECOVERY CHARACTERISTICS
FREE WHEELING DIODE
(TYPICAL)
=1000 V, VGE=±15 V, RG=3.0 Ω, Tj=125 °C
V
CC
INDUCTIVE LOAD
1000
trr
(A)
rr
100
(ns), I
rr
t
Irr
Single pulse, T
th(j-c)
0.01
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
(MAXIMUM)
C
1
0.1
=25°C
0.001
10
10 100 1000
EMITTER CURRENT I
(A)
E
7
0.00001 0.0001 0.001 0.01 0.1 1 10
NORMALIZED TRANSIENT THERMAL IMPEDANCE Z
R
th(j-c)Q
=25 K/kW, R
TIME (S)
th(j-c)D
=42 K/kW
July-2010
MITSUBISHI IGBT MODULES
CM500HA-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
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always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property
damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of
substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
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8
July-2010
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