Mitsubishi Electric US, Inc CM450DX-24T, CM450DXP-24T Data Sheet
<IGBT Modules>
Publication Date : September 2017
CMH-11082-B
Ver.1.2
4 5
0
4 5
0
APPLICATION
OPTION (Below options are available.)
●PC-TIM (Phase Change Thermal Interface Material) pre-apply
●V
CEsat
selection for parallel connection
INTERNAL CONNECTION
TERMINAL CODE
Di1
Di2
Tr1
9
Th
Tr2
NTC
8
1 2 3 4 5
6
7
10
11
1.
TH1
6.
C2E1
2.
TH2
7.
C2E1
3.
G1
8.
G2
4.
Es1
9.
Es2
5.
Cs1
10.
E2
11.
C1
OUTLINE DRAWING
Dimension in mm
MOUNTING HOLES
SECTION A
CM450DX-24T/CM450DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current IC .............…..................…
Collector-emitter voltage V
Maximum junction temperature T
DX
●Flat base type
●Copper base plate (Ni-plating)
●RoHS Directive compliant
●Tin plating pin terminals
..................
CES
vjmax
.........
1 2 0 0
1 7 5
A
V
°C
DXP
dual switch (half-bridge)
AC Motor Control, Motion/Servo Control, Power supply, etc.
Collector current IC .............…..................…
Collector-emitter voltage V
Maximum junction temperature T
..................
CES
vjmax
.........
1 2 0 0
1 7 5
A
V
°C
●Flat base type
●Copper base plate (Ni-plating)
●RoHS Directive compliant
●Tin plating pressfit terminals
●UL Recognized under UL1557, File No. E323585
COM.
1
<IGBT Modules>
CM450DX-24T/CM450DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : September 2017
CMH-11082-B
Ver.1.2
OUTLINE DRAWING
Dimension in mm
DX
TERMINAL
0.5
to 3
±0.2
Tolerance otherwise specified
Division of Dimension Tolerance
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
2
<IGBT Modules>
CM450DX-24T/CM450DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : September 2017
CMH-11082-B
Ver.1.2
OUTLINE DRAWING
Dimension in mm
DXP
TERMINAL
PCB DRILL HOLE PATTERN
over 3
to 6
±0.3
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
3
<IGBT Modules>
CM450DX-24T/CM450DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : September 2017
CMH-11082-B
Ver.1.2
Symbol
Item
Conditions
Rating
Unit
V
Collector-emitter voltage
G-E short-circuited
1200
V
V
Gate-emitter voltage
C-E short-circuited
± 20
V IC
DC, TC=118 °C
450
I
CRM
Pulse, Repetitive
900
P
Total power dissipation
TC=25 °C
2500
W
IE
DC
450
I
Pulse, Repetitive
900
Symbol
Item
Conditions
Rating
Unit
V
isol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
2500
V T
Maximum junction temperature
Instantaneous event (overload)
175
T
Maximum case temperature
(Note4)
125
T
vjop
Operating junction temperature
Continuous operation (under switching)
-40 ~ +150
T
stg
Storage temperature
-
-40 ~ +125
Limits
Min.
Typ.
Max.
I
Collector-emitter cut-off current
VCE=V
, G-E short-circuited
- - 1.0
mA
I
Gate-emitter leakage current
VGE=V
, C-E short-circuited
- - 0.5
μA
V
GE(th)
Gate-emitter threshold voltage
IC=45 mA, VCE=10 V
5.4
6.0
6.6
V
IC=450 A, VGE=15 V,
Tvj=25 °C
-
1.65
2.05
Refer to the figure of test circuit
Tvj=125 °C
-
1.85 - V
Tvj=150 °C
-
1.90 -
IC=450 A,
Tvj=25 °C
-
1.50
1.75
VGE=15 V,
Tvj=125 °C
-
1.70 - V
Tvj=150 °C
-
1.75 - C
Input capacitance
- -
109.1
C
oes
Output capacitance
VCE=10 V, G-E short-circuited
- - 3.1
nF
C
Reverse transfer capacitance
- -
1.4
QG
Gate charge
VCC=600 V, IC=450 A, VGE=15 V
-
3.4 - μC
t
Turn-on delay time
- - 600
tr
Rise time
- - 200
t
Turn-off delay time
- - 800
tf
Fall time - -
400
IE=450 A, G-E short-circuited,
Tvj=25 °C
-
1.70
2.25
Refer to the figure of test circuit
Tvj=125 °C
-
1.85 - V
Tvj=150 °C
-
1.90 -
IE=450 A,
Tvj=25 °C
-
1.50
1.85
G-E short-circuited,
Tvj=125 °C
-
1.50 - V
Tvj=150 °C
-
1.50 -
t
Reverse recovery time
VCC=600 V, IE=450 A, VGE=±15 V,
- - 400
ns Qrr
(Note1)
Reverse recovery charge
RG=1.3 Ω, Inductive load
-
35.1 - μC
Eon
Turn-on s witching energy per pulse
VCC=600 V, IC=IE=450 A,
-
43.1
-
E
off
Turn-off switching energy per pulse
VGE=±15 V, RG=1.3 Ω, Tvj=150 °C,
-
45
-
Err
Reverse recovery energy per pulse
Inductive load
-
32.4 - mJ
R
Internal lead resistance
Main terminals-chip, per switch, TC=25 °C
-
0.75 - mΩ
rg
Internal gate resistance
Per switch
-
0.67 - Ω
MAXIMUM RATINGS (Tvj=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWD
CES
GES
Collector current
tot
(Note1)
(Note1)
ERM
MODULE
Emitter current
(Note2, 4)
(Note2)
(Note2, 4)
(Note3)
(Note3)
A
A
vjmax
Cmax
ELECTRICAL CHARACTERISTICS (Tvj=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWD
Symbol Item Conditions
CES
GES
V
CEsat
(Terminal)
V
CEsat
(Chip)
ies
res
d(on)
d(off)
Collector-emitter saturation voltage
CES
GES
(Note5)
(Note5)
VCC=600 V, IC=450 A, VGE=±15 V,
RG=1.3 Ω, Inductive load
°C
°C
Unit
ns
(Note1)
VEC
(Terminal)
Emitter-collector voltage
(Note1)
VEC
(Chip)
(Note1)
rr
(Note1)
CC'+EE'
(Note5)
(Note5)
mJ
(Note4)
4
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