Mitsubishi Electric US, Inc CM400ST-24S1 Data Sheet

<IGBT Modules>

Publication Date : September 2016

1

CMH-10632-D

Ver.1.4

Collector current IC .............…..............................…

4 0 0 A

Collector-emitter voltage V

CES

..............................…

BRIDGE

1 2 0 0 V

AC SWITCH

6 5 0 V

Maximum junction temperature T

vjm a x

........................

1 7 5 °C

●Flat base Type

●Copper base plate

●Tin plating pin terminals

●RoHS Directive compliant*

fourpack (BRIDGE & AC SWITCH)

●Recognized under UL1557, File E323585

APPLICATION

OUTLINE DRAWING & INTERNAL CONNECTION

Dimension in mm

TERMINAL t=0.8

SECTION A

Tolerance otherwise specified

Division of Dimension

Tolerance

0.5

to 3

±0.2 over 3

to 6

±0.3

over 6

to 30

±0.5 over 30

to 120

±0.8

over 120

to 400

±1.2

NTC

TH1

TH2

Es1

G1

Cs1

Cs4

G4

Es4

Cs2

G2

Es23

G3

Cs3 P C N AC

Tr1

Di1

Tr2

Di2

Di3

Tr3

Tr4

Di4

BRIDGE

- IGBT ：Tr1, Tr4

- DIODE ：Di1, Di4
AC SWITCH

- IGBT ：Tr2, Tr3

- DIODE ：Di2, Di3

Tr2

CM400ST-24S1

HIGH POWER SWITCHING USE
INSULATED TYPE

3level inverter, UPS, PV

<IGBT Modules>

CM400ST-24S1

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

2

CMH-10632-D

Ver.1.4

Symbol

Item

Conditions

Rating

Unit

V

CES

Collector-emitter voltage

G-E short-circuited

1200

V V

GES

Gate-emitter voltage

C-E short-circuited

± 20

V IC

Collector current
DC, TC=103 °C

(Note2, 4)

400

A

I

CRM

Pulse, Repetitive, VGE15 V

(Note3)

800

P

t ot

Total power dissipation

TC=25 °C

(Note2, 4)

2340

W IE

(Note1)

Emitter current
DC

(Note2)

400

A

I

ERM

(Note1)

Pulse, Repetitive

(Note3)

800

Symbol

Item

Conditions

Rating

Unit

V

CES

Collector-emitter voltage

G-E short-circuited

650

V V

GES

Gate-emitter voltage

C-E short-circuited

± 20

V

IC

Collector current
DC, TC=95°C

(Note2, 4)

400

A

I

CRM

Pulse, Repetitive, VGE15 V

(Note3)

800

P

t ot

Total power dissipation

TC=25 °C

(Note2, 4)

1415

W IE

(Note1)

Emitter current
DC

(Note2)

400

A

I

ERM

(Note1)

Pulse, Repetitive

(Note3)

800

Symbol

Item

Conditions

Rating

Unit

V

i so l

Isolation voltage

Terminals to base plate, RMS, f=60 Hz, AC 1 min

4000

V T

v j m ax

Maximum junction temperature

Instantaneous event (overload)

175

°C

T

C ma x

Maximum case temperature

(Note4)

125

T

vjop

Operating junction temperature

Continuous operation (under switching)

-40 ~ +150

°C

T

s tg

Storage temperature

-

-40 ~ +125

Symbol

Item

Conditions

Limits

Unit

Min.

Typ.

Max.

I

CE S

Collector-emitter cut-off current

VCE=V

CES

, G-E short-circuited

- - 1.0

mA

I

GE S

Gate-emitter leakage current

VGE=V

GES

, C-E short-circuited

- - 0.5

μA

V

GE (t h)

Gate-emitter threshold voltage

IC=40mA, VCE=10 V

5.4

6.0

6.6

V

V

CE sa t

(Terminal)

IC=400 A, VGE=15 V,

Tvj=25 °C

-

1.80

2.25

Auxiliary Terminal

Tvj=125 °C

-

2.00 - V

Collector-emitter saturation voltage

(Note5)

Tvj=150 °C

-

2.05 -

V

CE sa t

(Chip)

IC=400 A, VGE=15 V,

Tvj=25 °C

-

1.70

2.15

Chip

Tvj=125 °C

-

1.90 - V

(Note5)

Tvj=150 °C

-

1.95 - C

ies

Input capacitance

- -

40

C

o es

Output capacitance

VCE=10 V, G-E short-circuited

- - 8.0

nF

C

r es

Reverse transfer capacitance

- -

0.67

QG

Gate charge

V

CC(P-C)=VCC(C-N)

=300 V, IC=400A, VGE=15 V

-

840 - nC

t

d (o n )

Turn-on delay time

V

CC(P-C)=VCC(C-N)

=300 V, IC=400 A, VGE=±15 V,

- - 700

tr

Rise time

- - 200

ns

t

d (o f f )

Turn-off delay time

RG=1.6 Ω, Inductive load

- - 600

tf

Fall time - -

150

VEC

(Note1)

(Terminal)

IE=400 A, G-E short-circuited,

Tvj=25 °C

-

2.60

3.40

Auxiliary Terminal

Tvj=125 °C

-

2.16 - V

Emitter-collector voltage

(Note5)

Tvj=150 °C

-

2.10 -

VEC

(Note1)

(Chip)

IE=400 A, G-E short-circuited,

Tvj=25 °C

-

2.50

3.30

Chip

Tvj=125 °C

-

2.06 - V

(Note5)

Tvj=150 °C

-

2.00 -

MAXIMUM RATINGS (Tvj=25 °C, unless otherwise specified)

BRIDGE PART IGBT/DIODE (Tr1, Tr4, Di1, Di4)

AC SWITCH PART IGBT/DIODE (Tr2, Tr3, Di2, Di3)

MODULE

ELECTRICAL CHARACTERISTICS (Tvj=25 °C, unless otherwise specified)

BRIDGE PART IGBT/DIODE (Tr1, Tr4, Di1, Di4)

<IGBT Modules>

CM400ST-24S1

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

3

CMH-10632-D

Ver.1.4

Symbol

Item

Conditions

Limits

Unit

Min.

Typ.

Max.

trr

(Note1)

Reverse recovery time

V

CC(P-C)=VCC(C-N)

=300 V, IE=400 A, VGE=±15 V,

- - 250

ns

Qrr

(Note1)

Reverse recovery charge

RG=0 Ω(Tr2/Tr3), Inductive load

-

16 - μC

Eon

Turn-on switching energy per pulse

V

CC(P-C)=VCC(C-N)

=300 V, IC=IE=400 A,

RG(Tr1,4) =1.6 Ω

-

17.0

-

mJ

E

of f

Turn-off switching energy per pulse

VGE=±15 V, Tvj=150 °C,

-

23.5

- Err

(Note1)

Reverse recovery energy per pulse

Inductive load

RG(Tr2,3) =0 Ω

-

7.0 - mJ

R

CC '+EE '

Internal lead resistance
Main terminals-chip, per switch,

- - 0.25

mΩ

TC=25 °C

(Note4)

rg

Internal gate resistance

Per switch

-

4.9 - Ω

Symbol

Item

Conditions

Limits

Unit

Min.

Typ.

Max.

V

CC (P -C)

(DC) Supply voltage

Applied across each of P to C and C to N

-

300

425

V

V

CC (C -N)

V

GEon

Gate (-emitter drive) voltage

Applied across emitter to gate of each IGBT

13.5

15.0

16.5

V

RG

External gate resistance

Per switch

Tr1, Tr4

1.6 - 16

Ω

Symbol

Item

Conditions

Limits

Unit

Min.

Typ.

Max.

I

CE S

Collector-emitter cut-off current

VCE=V

CES

, G-E short-circuited

- - 1.0

mA

I

GE S

Gate-emitter leakage current

VGE=V

GES

, C-E short-circuited

- - 0.5

μA

V

GE (t h)

Gate-emitter threshold voltage

IC=40mA, VCE=10 V

5.4

6.0

6.6

V

V

CE sa t

(Terminal)

IC=400 A, VGE=15 V,

Tvj=25 °C

-

1.35

1.75

Auxiliary Terminal

Tvj=125 °C

-

1.43 - V

Collector-emitter saturation voltage

(Note5)

Tvj=150 °C

-

1.45 -

V

CE sa t

(Chip)

IC=400 A, VGE=15 V,

Tvj=25 °C

-

1.25

1.65

Chip

Tvj=125 °C

-

1.33 - V

(Note5)

Tvj=150 °C

-

1.35 -

C

ies

Input capacitance

- -

48

C

o es

Output capacitance

VCE=10 V, G-E short-circuited

- - 3.1

nF C

r es

Reverse transfer capacitance

- -

0.9

QG

Gate charge

V

CC(P-C)=VCC(C-N)

=300 V, IC=400 A, VGE=15 V

-

1450 - nC

t

d (o n )

Turn-on delay time

V

CC(P-C)=VCC(C-N)

=300 V, IC=400 A, VGE=±15 V,

- - 350

tr

Rise time

- - 150

ns

t

d (o f f )

Turn-off delay time

RG=0 Ω, Inductive load

- - 500

tf

Fall time - -

300

VEC

(Note1)

(Terminal)

IE=400 A, G-E short-circuited,

Tvj=25 °C

-

2.00

2.80

Auxiliary Terminal

Tvj=125 °C

-

1.95 - V

Emitter-collector voltage

(Note5)

Tvj=150 °C

-

1.90 -

VEC

(Note1)

(Chip)

IE=400A, G-E short-circuited,

Tvj=25 °C

-

1.90

2.70

Chip

Tvj=125 °C

-

1.85 - V

(Note5)

Tvj=150 °C

-

1.80 - trr

(Note1)

Reverse recovery time

V

CC(P-C)=VCC(C-N)

=300 V, IE=400 A, VGE=±15 V,

- - 200

ns Qrr

(Note1)

Reverse recovery charge

RG=1.6 Ω(Tr1/Tr4), Inductive load

-

16 - μC

Eon

Turn-on switching energy per pulse

V

CC(P-C)=VCC(C-N)

=300 V, IC=IE=400 A,

RG(Tr2,3) =0 Ω

-

0.2

-

mJ

E

of f

Turn-off switching energy per pulse

VGE=±15 V, Tvj=150 °C,

-

21.2

- Err

(Note1)

Reverse recovery energy per pulse

Inductive load

RG(Tr1,4) =1.6 Ω

-

15.3 - mJ

R

CC '+EE '

Internal lead resistance
Main terminals-chip, per switch,

- - 0.25

mΩ

TC=25 °C

(Note4)

rg

Internal gate resistance

Per switch

-

1.5 - Ω

ELECTRICAL CHARACTERISTICS (Cont; Tvj=25 °C, unless otherwise specified)

BRIDGE PART IGBT/DIODE (Tr1, Tr4, Di1, Di4)

RECOMMENDED OPERATING CONDITIONS

AC SWITCH PART IGBT/DIODE (Tr2, Tr3, Di2, Di3)

<IGBT Modules>

CM400ST-24S1

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

4

CMH-10632-D

Ver.1.4

Symbol

Item

Conditions

Limits

Unit

Min.

Typ.

Max.

V

CC (P -C)

(DC) Supply voltage

Applied across each of P to C and C to N

-

300

360

V

V

CC (C -N)

V

GEon

Gate (-emitter drive) voltage

Applied across emitter to gate of each IGBT

13.5

15.0

16.5

V

RG

External gate resistance

Per switch

Tr2, Tr3

0 - 16

Ω

Symbol

Item

Conditions

Limits

Unit

Min.

Typ.

Max.

R25

Zero-power resistance

TC=25 °C

(Note4)

4.85

5.00

5.15

kΩ

ΔR/R

Deviation of resistance

R

100

=493 Ω, TC=100 °C

(Note4)

-7.3 - +7.8

% B

(2 5/ 50)

B-constant

Approximate by equation

(Note6)

-

3375 - K P25

Power dissipation

TC=25 °C

(Note4)

- - 10

mW

Symbol

Item

Conditions

Limits

Unit

Min.

Typ.

Max.

R

t h( j- c) Q

Thermal resistance

Junction to case, per BRIDGE PART IGBT

(Note4)

- - 0.064

K/W

R

t h( j- c)D

Junction to case, per BRIDGE PART FWD

(Note4)

- - 0.105

R

t h( j- c) Q

Junction to case

, per AC SWITCH PART IGBT

(Note4)

- - 0.106

R

t h( j- c)D

Junction to case

, per AC SWITCH PART FWD

(Note4)

- - 0.165

R

t h( c- s)

Contact thermal resistance
Case to heat sink, per 1 module,

-

0.011

-

K/W

Thermal grease applied

(Note4, 7)

Symbol

Item

Conditions

Limits

Unit

Min.

Typ.

Max.

Mt

Mounting torque

Main terminals

M 6 screw

3.5

4.0

4.5

N·m

Ms

Mounting torque

Mounting to heat sink

M 5 screw

2.5

3.0

3.5

N·m

m

mass - -

560 - g

ds

Creepage distance
Terminal to terminal

14.4 - -

mm

Terminal to base plate

16.7 - -

da

Clearance
Terminal to terminal

8.0 - -

mm

Terminal to base plate

16.7 - -

ec

Flatness of base plate

On the centerline X, Y

(Note8)

-50 - +100

μm

*:

This product is This product is compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment

(RoHS) directive 2011/65/EU.

Note1.

Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWD).

2.

Junction temperature (Tvj) should not increase beyond T

vjm ax

rating.

3.

Pulse width and repetition rate should be such that the device junction temperature (Tvj) dose not exceed T

vjm ax

rating.

4.

Case temperature (TC) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate and heat sink

just under the chips. Refer to the figure of chip location.

5.

Pulse width and repetition rate should be such as to cause negligible temperature rise.

6.

)

TT

/()

R

R

ln(B

)/(

502550

25

5025

11



R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]

R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]

7.

Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).

ELECTRICAL CHARACTERISTICS (Cont; Tvj=25 °C, unless otherwise specified)

RECOMMENDED OPERATING CONDITIONS

NTC THERMISTOR PART

THERMAL RESISTANCE CHARACTERISTICS

MECHANICAL CHARACTERISTICS

<IGBT Modules>

CM400ST-24S1

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

5

CMH-10632-D

Ver.1.4

Note8.

The base plate (mounting side) flatness measurement points (X, Y) are as follows of the next figure.

Y

X

+:Convex

-:Concave

+:Convex

-:Concave

mounting side

mounting side

mounting side

9.

Use the following screws when mounting the printed circuit board (PCB) on the standoffs.

The length of the screw depends on thickness (t1.0~t1.6) of the PCB.

Type

Size

Tightening torque

Recommended tightening method

(1)

PT

K25×8

0.55 ± 0.055 N・m

(2)

PT

K25×10

0.75 ± 0.075 N・m

by handwork (equivalent to 30 r/min

(3)

DELTA PT

25×8

0.55 ± 0.055 N・m

by mechanical screw driver)

(4)

DELTA PT

25×10

0.75 ± 0.075 N・m

~ 600 r/min (by mechanical screw driver)

(5)

B1 tapping screw

φ2.6×10 or φ2.6×12

0.75 ± 0.075 N・m

CHIP LOCATION (Top view)

Dimension in mm, tolerance: ±1 mm

Tr1/Tr4: BRIDGE IGBT, Tr2/Tr3: AC SWITCH IGBT,

Di1/Di4: BRIDGE FWD, Di2/Di3: AC SWITCH FWD,

Th: NTC thermistor.r