Mitsubishi Electric US, Inc CM400ST-24S1 Data Sheet

<IGBT Modules>

Publication Date : September 2016

1

CMH-10632-D

Ver.1.4

Collector current IC .............…..............................…

4 0 0 A

Collector-emitter voltage V

CES

..............................…

BRIDGE

1 2 0 0 V

AC SWITCH

6 5 0 V

Maximum junction temperature T

vjm a x

........................

1 7 5 °C

●Flat base Type

●Copper base plate

●Tin plating pin terminals

●RoHS Directive compliant*

fourpack (BRIDGE & AC SWITCH)

●Recognized under UL1557, File E323585

APPLICATION

OUTLINE DRAWING & INTERNAL CONNECTION

Dimension in mm

TERMINAL t=0.8

SECTION A

Tolerance otherwise specified

Division of Dimension

Tolerance

0.5

to 3

±0.2 over 3

to 6

±0.3

over 6

to 30

±0.5 over 30

to 120

±0.8

over 120

to 400

±1.2

NTC

TH1

TH2

Es1

G1

Cs1

Cs4

G4

Es4

Cs2

G2

Es23

G3

Cs3 P C N AC

Tr1

Di1

Tr2

Di2

Di3

Tr3

Tr4

Di4

BRIDGE

- IGBT ：Tr1, Tr4

- DIODE ：Di1, Di4
AC SWITCH

- IGBT ：Tr2, Tr3

- DIODE ：Di2, Di3

Tr2

CM400ST-24S1

HIGH POWER SWITCHING USE
INSULATED TYPE

3level inverter, UPS, PV

<IGBT Modules>

CM400ST-24S1

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

2

CMH-10632-D

Ver.1.4

Symbol

Item

Conditions

Rating

Unit

V

CES

Collector-emitter voltage

G-E short-circuited

1200

V V

GES

Gate-emitter voltage

C-E short-circuited

± 20

V IC

Collector current
DC, TC=103 °C

(Note2, 4)

400

A

I

CRM

Pulse, Repetitive, VGE15 V

(Note3)

800

P

t ot

Total power dissipation

TC=25 °C

(Note2, 4)

2340

W IE

(Note1)

Emitter current
DC

(Note2)

400

A

I

ERM

(Note1)

Pulse, Repetitive

(Note3)

800

Symbol

Item

Conditions

Rating

Unit

V

CES

Collector-emitter voltage

G-E short-circuited

650

V V

GES

Gate-emitter voltage

C-E short-circuited

± 20

V

IC

Collector current
DC, TC=95°C

(Note2, 4)

400

A

I

CRM

Pulse, Repetitive, VGE15 V

(Note3)

800

P

t ot

Total power dissipation

TC=25 °C

(Note2, 4)

1415

W IE

(Note1)

Emitter current
DC

(Note2)

400

A

I

ERM

(Note1)

Pulse, Repetitive

(Note3)

800

Symbol

Item

Conditions

Rating

Unit

V

i so l

Isolation voltage

Terminals to base plate, RMS, f=60 Hz, AC 1 min

4000

V T

v j m ax

Maximum junction temperature

Instantaneous event (overload)

175

°C

T

C ma x

Maximum case temperature

(Note4)

125

T

vjop

Operating junction temperature

Continuous operation (under switching)

-40 ~ +150

°C

T

s tg

Storage temperature

-

-40 ~ +125

Symbol

Item

Conditions

Limits

Unit

Min.

Typ.

Max.

I

CE S

Collector-emitter cut-off current

VCE=V

CES

, G-E short-circuited

- - 1.0

mA

I

GE S

Gate-emitter leakage current

VGE=V

GES

, C-E short-circuited

- - 0.5

μA

V

GE (t h)

Gate-emitter threshold voltage

IC=40mA, VCE=10 V

5.4

6.0

6.6

V

V

CE sa t

(Terminal)

IC=400 A, VGE=15 V,

Tvj=25 °C

-

1.80

2.25

Auxiliary Terminal

Tvj=125 °C

-

2.00 - V

Collector-emitter saturation voltage

(Note5)

Tvj=150 °C

-

2.05 -

V

CE sa t

(Chip)

IC=400 A, VGE=15 V,

Tvj=25 °C

-

1.70

2.15

Chip

Tvj=125 °C

-

1.90 - V

(Note5)

Tvj=150 °C

-

1.95 - C

ies

Input capacitance

- -

40

C

o es

Output capacitance

VCE=10 V, G-E short-circuited

- - 8.0

nF

C

r es

Reverse transfer capacitance

- -

0.67

QG

Gate charge

V

CC(P-C)=VCC(C-N)

=300 V, IC=400A, VGE=15 V

-

840 - nC

t

d (o n )

Turn-on delay time

V

CC(P-C)=VCC(C-N)

=300 V, IC=400 A, VGE=±15 V,

- - 700

tr

Rise time

- - 200

ns

t

d (o f f )

Turn-off delay time

RG=1.6 Ω, Inductive load

- - 600

tf

Fall time - -

150

VEC

(Note1)

(Terminal)

IE=400 A, G-E short-circuited,

Tvj=25 °C

-

2.60

3.40

Auxiliary Terminal

Tvj=125 °C

-

2.16 - V

Emitter-collector voltage

(Note5)

Tvj=150 °C

-

2.10 -

VEC

(Note1)

(Chip)

IE=400 A, G-E short-circuited,

Tvj=25 °C

-

2.50

3.30

Chip

Tvj=125 °C

-

2.06 - V

(Note5)

Tvj=150 °C

-

2.00 -

MAXIMUM RATINGS (Tvj=25 °C, unless otherwise specified)

BRIDGE PART IGBT/DIODE (Tr1, Tr4, Di1, Di4)

AC SWITCH PART IGBT/DIODE (Tr2, Tr3, Di2, Di3)

MODULE

ELECTRICAL CHARACTERISTICS (Tvj=25 °C, unless otherwise specified)

BRIDGE PART IGBT/DIODE (Tr1, Tr4, Di1, Di4)

<IGBT Modules>

CM400ST-24S1

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

3

CMH-10632-D

Ver.1.4

Symbol

Item

Conditions

Limits

Unit

Min.

Typ.

Max.

trr

(Note1)

Reverse recovery time

V

CC(P-C)=VCC(C-N)

=300 V, IE=400 A, VGE=±15 V,

- - 250

ns

Qrr

(Note1)

Reverse recovery charge

RG=0 Ω(Tr2/Tr3), Inductive load

-

16 - μC

Eon

Turn-on switching energy per pulse

V

CC(P-C)=VCC(C-N)

=300 V, IC=IE=400 A,

RG(Tr1,4) =1.6 Ω

-

17.0

-

mJ

E

of f

Turn-off switching energy per pulse

VGE=±15 V, Tvj=150 °C,

-

23.5

- Err

(Note1)

Reverse recovery energy per pulse

Inductive load

RG(Tr2,3) =0 Ω

-

7.0 - mJ

R

CC '+EE '

Internal lead resistance
Main terminals-chip, per switch,

- - 0.25

mΩ

TC=25 °C

(Note4)

rg

Internal gate resistance

Per switch

-

4.9 - Ω

Symbol

Item

Conditions

Limits

Unit

Min.

Typ.

Max.

V

CC (P -C)

(DC) Supply voltage

Applied across each of P to C and C to N

-

300

425

V

V

CC (C -N)

V

GEon

Gate (-emitter drive) voltage

Applied across emitter to gate of each IGBT

13.5

15.0

16.5

V

RG

External gate resistance

Per switch

Tr1, Tr4

1.6 - 16

Ω

Symbol

Item

Conditions

Limits

Unit

Min.

Typ.

Max.

I

CE S

Collector-emitter cut-off current

VCE=V

CES

, G-E short-circuited

- - 1.0

mA

I

GE S

Gate-emitter leakage current

VGE=V

GES

, C-E short-circuited

- - 0.5

μA

V

GE (t h)

Gate-emitter threshold voltage

IC=40mA, VCE=10 V

5.4

6.0

6.6

V

V

CE sa t

(Terminal)

IC=400 A, VGE=15 V,

Tvj=25 °C

-

1.35

1.75

Auxiliary Terminal

Tvj=125 °C

-

1.43 - V

Collector-emitter saturation voltage

(Note5)

Tvj=150 °C

-

1.45 -

V

CE sa t

(Chip)

IC=400 A, VGE=15 V,

Tvj=25 °C

-

1.25

1.65

Chip

Tvj=125 °C

-

1.33 - V

(Note5)

Tvj=150 °C

-

1.35 -

C

ies

Input capacitance

- -

48

C

o es

Output capacitance

VCE=10 V, G-E short-circuited

- - 3.1

nF C

r es

Reverse transfer capacitance

- -

0.9

QG

Gate charge

V

CC(P-C)=VCC(C-N)

=300 V, IC=400 A, VGE=15 V

-

1450 - nC

t

d (o n )

Turn-on delay time

V

CC(P-C)=VCC(C-N)

=300 V, IC=400 A, VGE=±15 V,

- - 350

tr

Rise time

- - 150

ns

t

d (o f f )

Turn-off delay time

RG=0 Ω, Inductive load

- - 500

tf

Fall time - -

300

VEC

(Note1)

(Terminal)

IE=400 A, G-E short-circuited,

Tvj=25 °C

-

2.00

2.80

Auxiliary Terminal

Tvj=125 °C

-

1.95 - V

Emitter-collector voltage

(Note5)

Tvj=150 °C

-

1.90 -

VEC

(Note1)

(Chip)

IE=400A, G-E short-circuited,

Tvj=25 °C

-

1.90

2.70

Chip

Tvj=125 °C

-

1.85 - V

(Note5)

Tvj=150 °C

-

1.80 - trr

(Note1)

Reverse recovery time

V

CC(P-C)=VCC(C-N)

=300 V, IE=400 A, VGE=±15 V,

- - 200

ns Qrr

(Note1)

Reverse recovery charge

RG=1.6 Ω(Tr1/Tr4), Inductive load

-

16 - μC

Eon

Turn-on switching energy per pulse

V

CC(P-C)=VCC(C-N)

=300 V, IC=IE=400 A,

RG(Tr2,3) =0 Ω

-

0.2

-

mJ

E

of f

Turn-off switching energy per pulse

VGE=±15 V, Tvj=150 °C,

-

21.2

- Err

(Note1)

Reverse recovery energy per pulse

Inductive load

RG(Tr1,4) =1.6 Ω

-

15.3 - mJ

R

CC '+EE '

Internal lead resistance
Main terminals-chip, per switch,

- - 0.25

mΩ

TC=25 °C

(Note4)

rg

Internal gate resistance

Per switch

-

1.5 - Ω

ELECTRICAL CHARACTERISTICS (Cont; Tvj=25 °C, unless otherwise specified)

BRIDGE PART IGBT/DIODE (Tr1, Tr4, Di1, Di4)

RECOMMENDED OPERATING CONDITIONS

AC SWITCH PART IGBT/DIODE (Tr2, Tr3, Di2, Di3)

<IGBT Modules>

CM400ST-24S1

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

4

CMH-10632-D

Ver.1.4

Symbol

Item

Conditions

Limits

Unit

Min.

Typ.

Max.

V

CC (P -C)

(DC) Supply voltage

Applied across each of P to C and C to N

-

300

360

V

V

CC (C -N)

V

GEon

Gate (-emitter drive) voltage

Applied across emitter to gate of each IGBT

13.5

15.0

16.5

V

RG

External gate resistance

Per switch

Tr2, Tr3

0 - 16

Ω

Symbol

Item

Conditions

Limits

Unit

Min.

Typ.

Max.

R25

Zero-power resistance

TC=25 °C

(Note4)

4.85

5.00

5.15

kΩ

ΔR/R

Deviation of resistance

R

100

=493 Ω, TC=100 °C

(Note4)

-7.3 - +7.8

% B

(2 5/ 50)

B-constant

Approximate by equation

(Note6)

-

3375 - K P25

Power dissipation

TC=25 °C

(Note4)

- - 10

mW

Symbol

Item

Conditions

Limits

Unit

Min.

Typ.

Max.

R

t h( j- c) Q

Thermal resistance

Junction to case, per BRIDGE PART IGBT

(Note4)

- - 0.064

K/W

R

t h( j- c)D

Junction to case, per BRIDGE PART FWD

(Note4)

- - 0.105

R

t h( j- c) Q

Junction to case

, per AC SWITCH PART IGBT

(Note4)

- - 0.106

R

t h( j- c)D

Junction to case

, per AC SWITCH PART FWD

(Note4)

- - 0.165

R

t h( c- s)

Contact thermal resistance
Case to heat sink, per 1 module,

-

0.011

-

K/W

Thermal grease applied

(Note4, 7)

Symbol

Item

Conditions

Limits

Unit

Min.

Typ.

Max.

Mt

Mounting torque

Main terminals

M 6 screw

3.5

4.0

4.5

N·m

Ms

Mounting torque

Mounting to heat sink

M 5 screw

2.5

3.0

3.5

N·m

m

mass - -

560 - g

ds

Creepage distance
Terminal to terminal

14.4 - -

mm

Terminal to base plate

16.7 - -

da

Clearance
Terminal to terminal

8.0 - -

mm

Terminal to base plate

16.7 - -

ec

Flatness of base plate

On the centerline X, Y

(Note8)

-50 - +100

μm

*:

This product is This product is compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment

(RoHS) directive 2011/65/EU.

Note1.

Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWD).

2.

Junction temperature (Tvj) should not increase beyond T

vjm ax

rating.

3.

Pulse width and repetition rate should be such that the device junction temperature (Tvj) dose not exceed T

vjm ax

rating.

4.

Case temperature (TC) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate and heat sink

just under the chips. Refer to the figure of chip location.

5.

Pulse width and repetition rate should be such as to cause negligible temperature rise.

6.

)

TT

/()

R

R

ln(B

)/(

502550

25

5025

11



R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]

R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]

7.

Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).

ELECTRICAL CHARACTERISTICS (Cont; Tvj=25 °C, unless otherwise specified)

RECOMMENDED OPERATING CONDITIONS

NTC THERMISTOR PART

THERMAL RESISTANCE CHARACTERISTICS

MECHANICAL CHARACTERISTICS

<IGBT Modules>

CM400ST-24S1

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

5

CMH-10632-D

Ver.1.4

Note8.

The base plate (mounting side) flatness measurement points (X, Y) are as follows of the next figure.

Y

X

+:Convex

-:Concave

+:Convex

-:Concave

mounting side

mounting side

mounting side

9.

Use the following screws when mounting the printed circuit board (PCB) on the standoffs.

The length of the screw depends on thickness (t1.0~t1.6) of the PCB.

Type

Size

Tightening torque

Recommended tightening method

(1)

PT

K25×8

0.55 ± 0.055 N・m

(2)

PT

K25×10

0.75 ± 0.075 N・m

by handwork (equivalent to 30 r/min

(3)

DELTA PT

25×8

0.55 ± 0.055 N・m

by mechanical screw driver)

(4)

DELTA PT

25×10

0.75 ± 0.075 N・m

~ 600 r/min (by mechanical screw driver)

(5)

B1 tapping screw

φ2.6×10 or φ2.6×12

0.75 ± 0.075 N・m

CHIP LOCATION (Top view)

Dimension in mm, tolerance: ±1 mm

Tr1/Tr4: BRIDGE IGBT, Tr2/Tr3: AC SWITCH IGBT,

Di1/Di4: BRIDGE FWD, Di2/Di3: AC SWITCH FWD,

Th: NTC thermistor.r

<IGBT Modules>

CM400ST-24S1

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

6

CMH-10632-D

Ver.1.4

P

iE

V

CC(P-N)

+

iC

Load

+

-VGE

+VGE

vCE

vGE

0

E

G

Es

RG

C

+VGE

-VGE

C G C

E

G

Es

Tr1,Di1

Tr4,Di4

Tr3
Di3

Tr2
Di2

-VGE

C

E

G

Es

AC N C

Cs

Cs

Cs

Cs

～

t

tf

tr

t

d (o n)

iC

10%

90 %

90 %

vGE

～

～

～

0 V

0 A

0

t

d (of f)

t

Switching test circuit and waveforms (BRIDGE PART switching)

-VGE

+VGE

0

P

iC

V

CC(P-N)

+

iE

Load

+

E

G

Es

C

-VGE

C G C

E

G

Es

Tr1,Di1

Tr4,Di4

Tr3
Di3

Tr2
Di2

-VGE

C

E

G

Es

AC N C

RG

-VGE

vCE

Cs

Cs

Cs

Cs

Irr

Qrr=0.5×Irr×trr

0.5×Irr

t

trr

iE

0 A

IE

Switching test circuit and waveforms (AC SWITCH PART switching)

trr, Qrr test waveform

0.1×ICM

ICM

V

CC(P-C)

V

CC(C-N)

vCE

iC t 0

ti

0.1×V

CC(C-N)

0.1×VCC

V

CC(P-C)

V

CC(C-N)

ICM

vCE

iC t 0

0.02×ICM

ti

0.1×V

CC(P-C)

V

CC(P-C)

V

CC(C-N)

ICM

vCE

iC t 0

0.02×ICM

ti

0.1×V

CC(C-N)

0.1×V

CC(P-C)

IEM

vEC

iE

t

0 V

ti

t

V

CC(P-C)

V

CC(C-N)

0 A

IGBT Turn-on switching energy

IGBT Turn-off switching energy

FWD Reverse recovery energy

Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)

TEST CIRCUIT AND WAVEFORMS

<IGBT Modules>

CM400ST-24S1

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

7

CMH-10632-D

Ver.1.4

P

E

G

Es

C

C G C

E

G

Es

Tr1

Di1

Tr4
Di4

Tr3
Di3

Tr2
Di2

V

GE

=15V

C E G

Es

AC

N

C

Short-circuited

IC

V

Cs

Cs

Cs

Cs

P

E

G

Es

C

C G C

E

G

Es

Tr1

Di1

Tr4
Di4

Tr3
Di3

Tr2
Di2

V

GE

=15V

C E G

Es

AC

N

C

Short-circuited

IC

V

Cs

Cs

Cs

Cs

P

E

G

Es

C

C G C

E

G

Es

Tr1

Di1

Tr4
Di4

Tr3
Di3

Tr2
Di2

C E G

Es

AC

N

C

Short-circuited

IE

V

Cs

Cs

Cs

Cs

P

E

G

Es

C

C G C

E

G

Es

Tr1

Di1

Tr4
Di4

Tr3
Di3

Tr2
Di2

C E G

Es

AC

N

C

Short-circuited

IE

V

Cs

Cs

Cs

Cs

Tr1 Tr4 Di1

Di4

V

CE sat

characteristics test circuit (BRIDGE PART)

VEC characteristics test circuit (BRIDGE PART)

P

E

G

Es

C

C G C

E

G

Es

Tr1

Di1

Tr4
Di4

Tr3
Di3

Tr2
Di2

VGE=15V

C E G

Es

AC

N

C

Short­circuited

IC

V

Cs

Cs

Cs

Cs

P

E

G

Es

C

C G C

E

G

Es

Tr1

Di1

Tr4
Di4

Tr3
Di3

Tr2
Di2

VGE=15V

C E G

Es

AC

N

C

Short­circuited

IC

V

Cs

Cs

Cs

Cs

P

E

G

Es

C

C G C

E

G

Es

Tr1

Di1

Tr4
Di4

Tr3
Di3

Tr2
Di2

VGE=15V

C E G

Es

AC

N

C

Short­circuited

IE

V

Cs

Cs

Cs

Cs

P

E

G

Es

C

C G C

E

G

Es

Tr1

Di1

Tr4
Di4

Tr3
Di3

Tr2
Di2

VGE=15V

C E G

Es

AC

N

C

Short­circuited

IE

V

Cs

Cs

Cs

Cs

Tr2 Tr3 Di2

Di3

V

CE sat

characteristics test circuit (AC SWITCH PART)

VEC characteristics test circuit (AC SWITCH PART)

TEST CIRCUIT

<IGBT Modules>

CM400ST-24S1

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

8

CMH-10632-D

Ver.1.4

OUTPUT

COLLECTOR-EMITTER SATURATION VOLTAGE

CHARACTERISTICS

CHARACTERISTICS

(TYPICAL)

(TYPICAL)

T

v j

=25 °C

(Chip)

VGE=15 V

(Chip)

COLLECTOR CURRENT I

C

(A)

COLLECTOR-EMITTER

SATURATION VOLTAGE V

CEsat

(V)

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION VOLTAGE

FREE WHEELING DIODE

CHARACTERISTICS

FORWARD CHARACTERISTICS

(TYPICAL)

(TYPICAL)

T

v j

=25 °C

(Chip)

G-E short-circuited

(Chip)

COLLECTOR-EMITTER SATURATION VOLTAGE V

CEsat

(V)

EMITTER CURRENT I

E

(A)

GATE-EMITTER VOLTAGE VGE (V)

EMITTER-COLLECTOR VOLTAGE VEC (V)

0

100

200

300

400

500

600

700

800

0 2 4 6 8 10

0

0.5

1

1.5

2

2.5

3

3.5

0 100 200 300 400 500 600 700 800

0

2

4

6

8

10

6 8 10 12 14 16 18 20

10

100

1000

0 0.5 1 1.5 2 2.5 3 3.5

Tvj=150 °C

T

v j

=125 °C

T

v j

=25 °C

T

v j

=125 °C

T

v j

=25 °C

IC=800 A

IC=400 A

IC=160 A

12 V

10 V

T

v j

=150 °C

11 V

9 V

15 V

VGE=20 V

PERFORMANCE CURVES

BRIDGE PART

<IGBT Modules>

CM400ST-24S1

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

9

CMH-10632-D

Ver.1.4

HALF-BRIDGE

HALF-BRIDGE

SWITCHING CHARACTERISTICS

SWITCHING CHARACTERISTICS

(TYPICAL)

(TYPICAL)

VCE=300 V, VGE=±15 V, RG=1.6 Ω(Tr1/Tr4), INDUCTIVE LOAD

VCE=300 V, VGE=±15 V, I

C

=400 A, INDUCTIVE LOAD

---------------: T

v j

=150 °C, - - - - -: T

v j

=125 °C

---------------: T

v j

=150 °C, - - - - -: T

v j

=125 °C

SWITCHING TIME t

d(on)

, t

r

, t

d(off)

t

f

(ns)

SWITCHING TIME t

r

(ns)

SWITCHING TIME t

d(on)

, t

r

, t

d(off)

, t

f

(ns)

SWITCHING TIME t

r

, t

f

(ns)

COLLECTOR CURRENT IC (A)

EXTERNAL GATE RESISTANCE RG (Tr1/Tr4) (Ω)

HALF-BRIDGE

HALF-BRIDGE

SWITCHING CHARACTERISTICS

SWITCHING CHARACTERISTICS

(TYPICAL)

(TYPICAL)

VCE=300 V, VGE=±15 V, R

G

=1.6 Ω(Tr1/Tr4),

VCE=300 V, VGE=±15 V, I

C

=400 A,

INDUCTIVE LOAD, PER PULSE

INDUCTIVE LOAD, PER PULSE

---------------: T

v j

=150 °C, - - - - -: T

v j

=125 °C

---------------: T

v j

=150 °C, - - - - -: T

v j

=125 °C

SWITCHING ENERGY (mJ)

REVERSE RECOVERY ENERGY (mJ)

SWITCHING ENERGY (mJ)

REVERSE RECOVERY ENERGY (mJ)

COLLECTOR CURRENT IC (A)

EXTERNAL GATE RESISTANCE RG (Tr1/Tr4) (Ω)

EMITTER CURRENT IE (A)

10

100

1000

10 100 1000

10

100

1000

0.1 1 10 100

0.01

0.1

1

10

100

10 100 1000

1

10

100

0.1 1 10 100

tr

tf

t

d( off)

t

d( on )

t

d( on )

tr

tf

t

d( off)

Eon

E

o ff

Eon

E

o ff

PERFORMANCE CURVES

BRIDGE PART

<IGBT Modules>

CM400ST-24S1

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

10

CMH-10632-D

Ver.1.4

HALF-BRIDGE

HALF-BRIDGE

SWITCHING CHARACTERISTICS

SWITCHING CHARACTERISTICS

(TYPICAL)

(TYPICAL)

VCE=300 V, VGE=±15 V, R

G

=0 Ω (Tr2/Tr3),

VCE=300 V, VGE=±15 V, I

E

=400 A,

INDUCTIVE LOAD, PER PULSE

INDUCTIVE LOAD, PER PULSE

---------------: T

v j

=150 °C, - - - - -: T

v j

=125 °C

---------------: T

v j

=150 °C, - - - - -: T

v j

=125 °C

REVERSE RECOVERY ENERGY (mJ)

SWITCHING TIME t

r

(ns)

REVERSE RECOVERY ENERGY (mJ)

SWITCHING TIME t

r

, t

f

(ns)

EMITTER CURRENT IE (A)

EXTERNAL GATE RESISTANCE RG (Tr2/Tr3) (Ω)

FREE WHEELING DIODE

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

VCE=300 V, VGE=±15 V, RG=0 Ω (Tr2/Tr3), INDUCTIVE LOAD

---------------: T

v j

=150 °C, - - - - -: T

v j

=125 °C

I

rr

(A)
t

rr

(ns)

EMITTER CURRENT IE (A)

EMITTER CURRENT IE (A)

0.01

0.1

1

10

100

10 100 1000

1

10

100

0.1 1 10 100

10

100

1000

10 100 1000

Err

Err

Irr

trr

PERFORMANCE CURVES

BRIDGE PART

<IGBT Modules>

CM400ST-24S1

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

11

CMH-10632-D

Ver.1.4

OUTPUT

COLLECTOR-EMITTER SATURATION VOLTAGE

CHARACTERISTICS

CHARACTERISTICS

(TYPICAL)

(TYPICAL)

T

v j

=25 °C

(Chip)

VGE=15 V

(Chip)

COLLECTOR CURRENT I

C

(A)

COLLECTOR-EMITTER

SATURATION VOLTAGE V

CEsat

(V)

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION VOLTAGE

FREE WHEELING DIODE

CHARACTERISTICS

FORWARD CHARACTERISTICS

(TYPICAL)

(TYPICAL)

T

v j

=25 °C

(Chip)

G-E short-circuited

(Chip)

COLLECTOR-EMITTER SATURATION VOLTAGE V

CEsat

(V)

EMITTER CURRENT I

E

(A)

GATE-EMITTER VOLTAGE VGE (V)

EMITTER-COLLECTOR VOLTAGE VEC (V)

0

100

200

300

400

500

600

700

800

0 2 4 6 8 10

0

0.5

1

1.5

2

2.5

3

3.5

0 100 200 300 400 500 600 700 800

0

2

4

6

8

10

6 8 10 12 14 16 18 20

10

100

1000

0 0.5 1 1. 5 2 2.5 3 3.5

T

v j

=125 °C

IC=800 A

IC=400 A

VGE=20 V

10 V

12 V

15 V

T

v j

=150 °C

IC=160 A

9 V

11 V

T

v j

=125 °C

T

v j

=25 °C

T

v j

=25 °C

T

v j

=150 °C

PERFORMANCE CURVES

AC SWITCH PART

<IGBT Modules>

CM400ST-24S1

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

12

CMH-10632-D

Ver.1.4

HALF-BRIDGE

HALF-BRIDGE

SWITCHING CHARACTERISTICS

SWITCHING CHARACTERISTICS

(TYPICAL)

(TYPICAL)

VCE=300 V, VGE=±15 V, RG=0 Ω(Tr2/Tr3), INDUCTIVE LOAD

VCE=300 V, VGE=±15 V, I

C

=400 A, INDUCTIVE LOAD

---------------: T

v j

=150 °C, - - - - -: T

v j

=125 °C

---------------: T

v j

=150 °C, - - - - -: T

v j

=125 °C

SWITCHING TIME t

d(on)

, t

r

, t

d(off)

t

f

(ns)

SWITCHING TIME t

r

(ns)

SWITCHING TIME t

d(on)

, t

r

, t

d(off)

, t

f

(ns)

SWITCHING TIME t

r

, t

f

(ns)

COLLECTOR CURRENT IC (A)

EXTERNAL GATE RESISTANCE RG (Tr2/Tr3) (Ω)

HALF-BRIDGE

HALF-BRIDGE

SWITCHING CHARACTERISTICS

SWITCHING CHARACTERISTICS

(TYPICAL)

(TYPICAL)

VCE=300 V, VGE=±15 V, R

G

=0 Ω(Tr2/Tr3),

VCE=300 V, VGE=±15 V, I

C

=400 A,

INDUCTIVE LOAD, PER PULSE

INDUCTIVE LOAD, PER PULSE

---------------: T

v j

=150 °C, - - - - -: T

v j

=125 °C

---------------: T

v j

=150 °C, - - - - -: T

v j

=125 °C

SWITCHING ENERGY (mJ)

REVERSE RECOVERY ENERGY (mJ)

SWITCHING ENERGY (mJ)

REVERSE RECOVERY ENERGY (mJ)

COLLECTOR CURRENT IC (A)

EXTERNAL GATE RESISTANCE RG (Tr2/Tr3) (Ω)

EMITTER CURRENT IE (A)

10

100

1000

10 100 1000

10

100

1000

0.1 1 10 100

0.01

0.1

1

10

100

10 100 1000

0.1

1

10

100

0.1 1 10 100

tr

tf

t

d( off)

t

d( on )

t

d( on )

tr

tf

t

d( off)

Eon

E

o ff

Eon

E

o ff

PERFORMANCE CURVES

AC SWITCH PART

<IGBT Modules>

CM400ST-24S1

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

13

CMH-10632-D

Ver.1.4

HALF-BRIDGE

HALF-BRIDGE

SWITCHING CHARACTERISTICS

SWITCHING CHARACTERISTICS

(TYPICAL)

(TYPICAL)

VCE=300 V, VGE=±15 V, R

G

=1.6 Ω (Tr1/Tr4),

VCE=300 V, VGE=±15 V, I

E

=400 A,

INDUCTIVE LOAD, PER PULSE

INDUCTIVE LOAD, PER PULSE

---------------: T

v j

=150 °C, - - - - -: T

v j

=125 °C

---------------: T

v j

=150 °C, - - - - -: T

v j

=125 °C

REVERSE RECOVERY ENERGY (mJ)

SWITCHING TIME t

r

(ns)

REVERSE RECOVERY ENERGY (mJ)

SWITCHING TIME t

r

, t

f

(ns)

EMITTER CURRENT IE (A)

EXTERNAL GATE RESISTANCE RG (Tr1/Tr4) (Ω)

FREE WHEELING DIODE

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

VCE=300 V, VGE=±15 V, RG=1.6 Ω (Tr1/Tr4), INDUCTIVE LOAD

---------------: T

v j

=150 °C, - - - - -: T

v j

=125 °C

I

rr

(A)
t

rr

(ns)

EMITTER CURRENT IE (A)

EMITTER CURRENT IE (A)

0.01

0.1

1

10

100

10 100 1000

1

10

100

0.1 1 10 100

10

100

1000

10 100 1000

Err

Err

Irr

trr

PERFORMANCE CURVES

AC SWITCH PART

<IGBT Modules>

CM400ST-24S1

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

14

CMH-10632-D

Ver.1.4

CAPACITANCE

GATE CHARGE

CHARACTERISTICS

CHARACTERISTICS

(TYPICAL)

(TYPICAL)

G-E short-circuited, T

v j

=25 °C

V

CC(P-N)

=600 V, IC=400 A, Tvj=25 °C

CAPACITANCE (nF)

GATE-EMITTER VOLTAGE V

GE

(V)

COLLECTOR-EMITTER VOLTAGE VCE (V)

GATE CHARGE QG (nC)

CAPACITANCE

GATE CHARGE

CHARACTERISTICS

CHARACTERISTICS

(TYPICAL)

(TYPICAL)

G-E short-circuited, T

v j

=25 °C

V

CC(P-C)

= V

CC(C-N)

=300 V, IC=400 A, Tvj=25 °C

CAPACITANCE (nF)

GATE-EMITTER VOLTAGE V

GE

(V)

COLLECTOR-EMITTER VOLTAGE VCE (V)

GATE CHARGE QG (nC)

0.01

0.1

1

10

100

0.1 1 10 100

0

5

10

15

20

0 200 400 600 800 1000 1200

0.01

0.1

1

10

100

0.1 1 10 100

0

5

10

15

20

0 500 1000 1500 2000

C

o es

C

r es

C

i es

C

o es

C

r es

C

i es

PERFORMANCE CURVES

BRIDGE PART

AC SWITCH PART

<IGBT Modules>

CM400ST-24S1

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

15

CMH-10632-D

Ver.1.4

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTICS

(MAXIMUM)

Single pulse, TC=25 °C

B R IDGE PA R T: R

t h( j- c )Q

=0.064 K/W, R

t h( j- c)D

=0.105 K/W

A C SW I T CH PA R T: R

t h( j- c )Q

=0.106 K/W, R

t h( j- c)D

=0.165 K/W

NORMALIZED TRANSIENT THERMAL RESISTANCE Z

t h( j- c)

TIME (S)

TEMPERATURE

CHARACTERISTICS

(TYPICAL)

RESISTANCE R (kΩ)

TEMPERATURE T (°C)

0.001

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10

0.1

1

10

100

-50 -25 0 25 50 75 100 125

PERFORMANCE CURVES

COMMON PART

NTC THERMISTOR PART

<IGBT Modules>

CM400ST-24S1

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

16

CMH-10632-D

Ver.1.4

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
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