< IGBT MODULES >
3 0
0
Brake-chopper
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
TERMINAL
SECTION A
INTERNAL CONNECTION
Tolerance otherwise specified
Di
Th
NTC
TH2(6)
TH1(5)
C(2)
A(1)
K(8)
E(7)
Tr
G(3)
Es(4)
Division of Dimension
Tolerance
0.5
to 3
±0.2
over 6
to 30
±0.5
over 30
to 120
±0.8
over 120
to 400
±1.2
CM300EXS-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
APPLICATION
Brake
Collector current IC .............…..........................…
Collector-emitter voltage V
Maximum junction temperature T
..........................… 1 2 0 0 V
CES
..................... 1 7 5 °C
jmax
A
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliant
●Recognized under UL1557, File E323585
Publication Date : February 2014
t=0.8
over 3 to 6 ±0.3
The tolerance of size between
terminals is assumed to be ±0.4.
1
< IGBT MODULES >
CM300EXS
-24S
Symbol
Item
Conditions
Rating
Unit
V
Gate-emitter voltage
C-E short-circuited
± 20
V
IC
DC, TC=119 °C
(Note1, 3)
300
I
CRM
Pulse, Repetitive
(Note2)
600
(Note1, 3)
V
RRM
Repetitive peak reverse voltage
-
1200
V
IF
DC
(Note1)
300
I
Pulse, Repetitive
(Note2)
600
Symbol
Item
Conditions
Rating
Unit
V
isol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
4000
V
T
Maximum case temperature
(Note3)
125
T
jop
Operating junction temperature
Continuous operation (under switching)
-40 ~ +150
T
stg
Storage temperature
-
-40 ~ +125
Limits
Min.
Typ.
Max.
CES
I
Gate-emitter leakage current
VGE=V
GES
, C-E short-circuited
- - 0.5
μA
V
GE(th)
Gate-emitter threshold voltage
IC=30 mA, VCE=10 V
5.4
6.0
6.6
V
IC=300 A, VGE=15 V,
Tj=25 °C
-
1.80
2.25
(Note4)
Tj=150 °C
-
2.05
-
IC=300 A, VGE=15 V,
Tj=25 °C
-
1.70
2.15
Tj=125 °C
-
1.90
-
(Note4)
C
Input capacitance
- - 30
C
oes
Output capacitance
- - 6.0
C
Reverse transfer capacitance
- - 0.5
t
Turn-on delay time
- - 800
tr
Rise time
- - 200
t
Turn-off delay time
- - 600
Eon
Turn-on s witching energy per pulse
VCC=600 V, IC=300 A,
-
41
-
E
off
Turn-off switching energy per pulse
VGE=±15 V, RG=0 Ω, Tj=150 °C,
-
32
-
Main terminals-chip, per switch,
TC=25 °C
(Note3)
rg
Internal gate resistance
- - 6.5 - Ω
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
IGBT PART
V
Collector-emitter voltage G-E short-circuited 1200 V
CES
GES
Collector current
P
Total power dissipation TC=25 °C
tot
2270 W
A
DIODE PART
Symbol Item Conditions Rating Unit
FRM
Forward current
A
MODULE
T
Maximum junction temperature Instantaneous event (overload) 175
jmax
Cmax
°C
°C
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)
IGBT PART
Symbol Item Conditions
I
Collector-emitter cut-off current VCE=V
CES
GES
V
CE sat
(Terminal)
Refer to the figure of test circuit Tj=125 °C - 2.00 -
, G-E short-circuited - - 1.0 mA
Collector-emitter saturation voltage
V
CE sat
(Chip)
ies
Tj=150 °C - 1.95 -
VCE=10 V, G-E short-circuited
res
QG Gate charge VCC=600 V, IC=300 A, VGE=15 V - 700 - nC
d(on)
d(off)
tf Fall time - - 300
VCC=600 V, IC=300 A, VGE=±15 V,
RG=0 Ω, Inductive load
Unit
V
V
nF
ns
R
Internal lead resistance
CC'+EE'
Publication Date : February 2014
mJ
- - 2.0 mΩ
2
< IGBT MODULES >
CM300EXS
-24S
Limits
I
Reverse current
VR=V
RRM
- -
1.0
mA
IF=300 A,
Tj=25 °C
-
1.8
2.25
Refer to the figure of test circuit
Tj=125 °C
-
1.8
-
(Note4)
IF=300 A,
Tj=25 °C
-
1.7
2.15
Tj=125 °C
-
1.7
-
Tj=150 °C
-
1.7
-
Qrr
Reverse recovery charge
RG=0 Ω, Inductive load
-
16 - μC
VCC=600 V, IF=300 A, VGE=±15 V,
Limits
R25
Zero-power resistance
TC=25 °C
(Note3)
4.85
5.00
5.15
kΩ
ΔR/R
Deviation of resistance
R
100
=493 Ω, TC=100 °C
-7.3 - +7.8
%
B
B-constant
Approximate by equation
(Note5)
-
3375 - K
(Note3)
Limits
Min.
Typ.
Max.
R
th(j- c)Q
Junction to case, IGBT
- - 0.066
(Note3)
Case to heat sink, per 1 module,
(Note3, 6)
Limits
Min.
Typ.
Max.
Mt
Mounting torque
Main terminals
M 5 screw
2.5
3.0
3.5
N·m
Terminal to terminal
20.6 - -
Terminal to base plate
17 - -
Terminal to terminal
12 - -
m
mass - -
210 - g
ec
Flatness of base plate
On the centerline X, Y
-100 - +100
μm
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont.; Tj=25 °C, unless otherwise specified)
DIODE PART
Symbol Item Conditions
RRM
V
F
(Terminal)
V
F
(Chip)
Forward voltage
Tj=150 °C - 1.8 -
(Note4)
Min. Typ. Max.
Unit
V
V
trr Reverse recovery time VCC=600 V, IF=300 A, VGE=±15 V, - - 300 ns
Err Reverse recovery energy per pulse
RG=0 Ω, Tj=150 °C, Inductive load
- 22 - mJ
NTC THERMISTOR PART
Symbol Item Conditions
(25/50)
P25 Power dissipation TC=25 °C
- - 10 mW
Min. Typ. Max.
(Note3)
Unit
THERMAL RESISTANCE CHARACTERISTICS
Symbol Item Conditions
R
th(j- c)D
R
th(c- s )
Thermal resistance
Junction to case, DIODE
Contact thermal resistance
Thermal grease applied
(Note3)
- - 0.12
- 25 - K/kW
Unit
K/W
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Ms Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m
ds Creepage distance
da Clearance
Terminal to base plate 10.6 - -
(Note7)
Unit
mm
mm
Publication Date : February 2014
3
< IGBT MODULES >
CM300EXS
-24S
)
TT
/()
R
R
ln(B
)/(
502550
25
5025
11
−=
Y
X
+:Convex
-:Concave
+:Convex
-:Concave
mounting side
mounting side
mounting
side
Limits
Min.
Typ.
Max.
V
GEon
Gate (-emitter drive) voltage
Applied across G-Es terminals
13.5
15.0
16.5
V RG
External gate resistance
- 0 - 15
Ω
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr: IGBT, Di: DIODE, Th: NTC thermistor
HIGH POWER SWITCHING USE
INSULATED TYPE
Note1. Junction temperature (Tj) should not increase beyond T
2. Pulse width and repetition rate should be such that the device junction temperature (T
3. Case temperature (T
just under the chips. Refer to the figure of chip location.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Refer to the figure of test circuit.
5.
R
: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]
25
: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]
R
50
6. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
7. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
rating.
jmax
) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate and heat sink
C
,
) dose not exceed T
j
jmax
rating.
8. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"φ2.6×10 or φ2.6×12 self tapping screw"
The length of the screw depends on thickness (t1.6~t2.0) of the PCB.
RECOMMENDED OPERATING CONDITIONS
Symbol Item Conditions
VCC (DC) Supply voltage Applied across C-E/A-K terminals - 600 850 V
Unit
Publication Date : February 2014
4
< IGBT MODULES >
CM300EXS
-24S
VCC
-V
GE
+VGE
+
vCE
vGE
0
iF
iC
K
E
A
G
Es
Load
RG
C
～
t
t
f
tr
t
d(on)
iC
10%
90 %
90 %
vGE
～
～
～
0 V
0 A
0
t
d(off)
t
Irr
Qrr=0.5×Irr×trr
0.5×Irr
t
trr
iF
0 A
IF
0.1×ICM
ICM
VCC
vCE
iC
t
0
ti
0.1
×VCC
0.1×VCC
VCC
ICM
vCE
iC
t
0
0.02×ICM
ti
IFM
vKA
iF
t
0 V
ti
t
VCC
0 A
IGBT Turn-on switching energy
IGBT Turn-off switching energy
DIODE Reverse recovery energy
V
GE
=15V
K
C
E
IC
G
Es
V
A
K
C
E
IF
G
Es
V
A
V
CEsat
characteristics test circuit
VF characteristics test circuit
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT AND WAVEFORMS
Switching test circuit and waveforms trr, Qrr test waveform
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
TEST CIRCUIT
Publication Date : February 2014
5
< IGBT MODULES >
CM300EXS
-24S
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE
(TYPICAL)
Tj=25 °C
(Chip)
VGE=15 V
(Chip)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE
(TYPICAL)
DIODE
(TYPICAL)
Tj=25 °C
(Chip)
(Chip)
GATE-EMITTER VOLTAGE VGE (V)
FORWARD VOLTAGE VF (V)
0
100
200
300
400
500
600
0 2 4 6 8 10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 100 200 300 400 500 600
0
2
4
6
8
10
6 8 10 12 14 16 18 20
10
100
1000
0.0 0.5 1.0 1.5 2.0 2.5 3.0
°C
Tj=125 °C
Tj=25 °C
Tj=125 °C
Tj=25 °C
°C
IC=600 A
IC=300 A
IC=120 A
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
IGBT/DIODE part
OUTPUT CHARACTERISTICS
VGE=20 V
15 V
(A)
C
COLLECTOR CURRENT I
13.5 V
12 V
11 V
10 V
9 V
(V)
CEsat
COLLECTOR-EMITTER SATURA TION VOLTAG E V
CHARACTERISTICS
Tj=150
CHARACTERISTICS
(V)
CEsat
COLLECTOR-EMITTER SATURATION VOLTAGE V
Publication Date : February 2014
FORWARD CHARACTERISTICS
(A)
F
Tj=150
FORWARD CURRENT I
6
< IGBT MODULES >
CM300EXS
-24S
HALF-BRIDGE
(TYPICAL)
HALF-BRIDGE
(TYPICAL)
COLLECTOR CURRENT IC (A)
EXTERNAL GATE RESISTANCE RG (Ω)
HALF-BRIDGE
(TYPICAL)
HALF-BRIDGE
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 Ω,
VCC=600 V, VGE=±15 V, IC/IF=300 A,
REVERSE RECOVERY ENERGY (mJ)
COLLECTOR CURRENT IC (A)
EXTERNAL GATE RESISTANCE RG (Ω)
10
100
1000
10 100 1000
10
100
1000
0.1 1 10 100
1
10
100
10 100 1000
1
10
100
0.1 1 10 100
d(on)
E
E
off
tf
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
IGBT/DIODE part
SWITCHING CHARACTERISTICS
VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD
---------------: T
t
d(off)
t
d(on)
=150 °C, - - - - -: Tj=125 °C
j
SWITCHING TIME (ns)
t
r
SWITCHING CHARACTERISTICS
VCC=600 V, VGE=±15 V, IC=300 A, INDUCTIVE LOAD
---------------: Tj=150 °C, - - - - -: Tj=125 °C
SWITCHING TIME (ns)
t
d(off)
t
tf
tf
SWITCHING CHARACTERISTICS
INDUCTIVE LOAD, PER PULSE
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
E
on
E
rr
SWITCHING ENERGY (mJ)
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
SWITCHING CHARACTERISTICS
INDUCTIVE LOAD, PER PULSE
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
Eon
off
Err
FORWARD CURRENT IF (A)
Publication Date : February 2014
7
< IGBT MODULES >
CM300EXS
-24S
(TYPICAL)
DIODE
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE VCE (V)
FORWARD CURRENT IF (A)
(TYPICAL)
(MAXIMUM)
GATE CHARGE QG (nC)
TIME (S)
0.1
1
10
100
0.1 1 10 100
10
100
1000
10 100 1000
0
5
10
15
20
0 200 400 600 800 1000
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
IGBT/DIODE part
CAPACITANCE CHARACTERISTICS
REVERSE RECOVERY CHARACTERISTICS
VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD
G-E short-circuited, Tj=25 °C
C
ies
(A)
rr
C
oes
(ns), I
rr
t
---------------: Tj=150 °C, - - - - -: Tj=125 °C
trr
Irr
CAPACITANCE (nF)
C
res
GATE CHARGE CHARACTERISTICS
VCC=600 V, IC=300 A, Tj=25 °C
(V)
GE
GATE-EMITTER VOLT AGE V
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
Single pulse, TC=25 °C
R
th(j- c)Q
=0.066 K/W, R
th(j- c)D
=0.12 K/W
th(j- c)
Z
NORMALIZED TRANSIENT THERMAL RESISTANCE
Publication Date : February 2014
8
< IGBT MODULES >
CM300EXS
-24S
(TYPICAL)
TEMPERATURE T (°C)
0.1
1
10
100
-50 -25 0 25 50 75 100 125
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
NTC thermistor part
RESISTANCE R (kΩ)
TEMPERATURE CHARACTERISTICS
Publication Date : February 2014
9
< IGBT MODULES >
CM300EXS
-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Mitsubishi Electric Corpor ation puts the maxi mum effort into making se miconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
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Notes regarding these ma t er ials
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Publication Date : February 2014
10
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