Mitsubishi Electric US, Inc CM300EXS-24S Data Sheet
< IGBT MODULES >
3 0
0
Brake-chopper
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
TERMINAL
SECTION A
INTERNAL CONNECTION
Tolerance otherwise specified
Di
Th
NTC
TH2(6)
TH1(5)
C(2)
A(1)
K(8)
E(7)
Tr
G(3)
Es(4)
Division of Dimension
Tolerance
0.5
to 3
±0.2
over 6
to 30
±0.5
over 30
to 120
±0.8
over 120
to 400
±1.2
CM300EXS-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
APPLICATION
Brake
Collector current IC .............…..........................…
Collector-emitter voltage V
Maximum junction temperature T
..........................… 1 2 0 0 V
CES
..................... 1 7 5 °C
jmax
A
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliant
●Recognized under UL1557, File E323585
Publication Date : February 2014
t=0.8
over 3 to 6 ±0.3
The tolerance of size between
terminals is assumed to be ±0.4.
1
< IGBT MODULES >
CM300EXS
-24S
Symbol
Item
Conditions
Rating
Unit
V
Gate-emitter voltage
C-E short-circuited
± 20
V
IC
DC, TC=119 °C
(Note1, 3)
300
I
CRM
Pulse, Repetitive
(Note2)
600
(Note1, 3)
V
RRM
Repetitive peak reverse voltage
-
1200
V
IF
DC
(Note1)
300
I
Pulse, Repetitive
(Note2)
600
Symbol
Item
Conditions
Rating
Unit
V
isol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
4000
V
T
Maximum case temperature
(Note3)
125
T
jop
Operating junction temperature
Continuous operation (under switching)
-40 ~ +150
T
stg
Storage temperature
-
-40 ~ +125
Limits
Min.
Typ.
Max.
CES
I
Gate-emitter leakage current
VGE=V
GES
, C-E short-circuited
- - 0.5
μA
V
GE(th)
Gate-emitter threshold voltage
IC=30 mA, VCE=10 V
5.4
6.0
6.6
V
IC=300 A, VGE=15 V,
Tj=25 °C
-
1.80
2.25
(Note4)
Tj=150 °C
-
2.05
-
IC=300 A, VGE=15 V,
Tj=25 °C
-
1.70
2.15
Tj=125 °C
-
1.90
-
(Note4)
C
Input capacitance
- - 30
C
oes
Output capacitance
- - 6.0
C
Reverse transfer capacitance
- - 0.5
t
Turn-on delay time
- - 800
tr
Rise time
- - 200
t
Turn-off delay time
- - 600
Eon
Turn-on s witching energy per pulse
VCC=600 V, IC=300 A,
-
41
-
E
off
Turn-off switching energy per pulse
VGE=±15 V, RG=0 Ω, Tj=150 °C,
-
32
-
Main terminals-chip, per switch,
TC=25 °C
(Note3)
rg
Internal gate resistance
- - 6.5 - Ω
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
IGBT PART
V
Collector-emitter voltage G-E short-circuited 1200 V
CES
GES
Collector current
P
Total power dissipation TC=25 °C
tot
2270 W
A
DIODE PART
Symbol Item Conditions Rating Unit
FRM
Forward current
A
MODULE
T
Maximum junction temperature Instantaneous event (overload) 175
jmax
Cmax
°C
°C
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)
IGBT PART
Symbol Item Conditions
I
Collector-emitter cut-off current VCE=V
CES
GES
V
CE sat
(Terminal)
Refer to the figure of test circuit Tj=125 °C - 2.00 -
, G-E short-circuited - - 1.0 mA
Collector-emitter saturation voltage
V
CE sat
(Chip)
ies
Tj=150 °C - 1.95 -
VCE=10 V, G-E short-circuited
res
QG Gate charge VCC=600 V, IC=300 A, VGE=15 V - 700 - nC
d(on)
d(off)
tf Fall time - - 300
VCC=600 V, IC=300 A, VGE=±15 V,
RG=0 Ω, Inductive load
Unit
V
V
nF
ns
R
Internal lead resistance
CC'+EE'
Publication Date : February 2014
mJ
- - 2.0 mΩ
2
< IGBT MODULES >
CM300EXS
-24S
Limits
I
Reverse current
VR=V
RRM
- -
1.0
mA
IF=300 A,
Tj=25 °C
-
1.8
2.25
Refer to the figure of test circuit
Tj=125 °C
-
1.8
-
(Note4)
IF=300 A,
Tj=25 °C
-
1.7
2.15
Tj=125 °C
-
1.7
-
Tj=150 °C
-
1.7
-
Qrr
Reverse recovery charge
RG=0 Ω, Inductive load
-
16 - μC
VCC=600 V, IF=300 A, VGE=±15 V,
Limits
R25
Zero-power resistance
TC=25 °C
(Note3)
4.85
5.00
5.15
kΩ
ΔR/R
Deviation of resistance
R
100
=493 Ω, TC=100 °C
-7.3 - +7.8
%
B
B-constant
Approximate by equation
(Note5)
-
3375 - K
(Note3)
Limits
Min.
Typ.
Max.
R
th(j- c)Q
Junction to case, IGBT
- - 0.066
(Note3)
Case to heat sink, per 1 module,
(Note3, 6)
Limits
Min.
Typ.
Max.
Mt
Mounting torque
Main terminals
M 5 screw
2.5
3.0
3.5
N·m
Terminal to terminal
20.6 - -
Terminal to base plate
17 - -
Terminal to terminal
12 - -
m
mass - -
210 - g
ec
Flatness of base plate
On the centerline X, Y
-100 - +100
μm
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont.; Tj=25 °C, unless otherwise specified)
DIODE PART
Symbol Item Conditions
RRM
V
F
(Terminal)
V
F
(Chip)
Forward voltage
Tj=150 °C - 1.8 -
(Note4)
Min. Typ. Max.
Unit
V
V
trr Reverse recovery time VCC=600 V, IF=300 A, VGE=±15 V, - - 300 ns
Err Reverse recovery energy per pulse
RG=0 Ω, Tj=150 °C, Inductive load
- 22 - mJ
NTC THERMISTOR PART
Symbol Item Conditions
(25/50)
P25 Power dissipation TC=25 °C
- - 10 mW
Min. Typ. Max.
(Note3)
Unit
THERMAL RESISTANCE CHARACTERISTICS
Symbol Item Conditions
R
th(j- c)D
R
th(c- s )
Thermal resistance
Junction to case, DIODE
Contact thermal resistance
Thermal grease applied
(Note3)
- - 0.12
- 25 - K/kW
Unit
K/W
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Ms Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m
ds Creepage distance
da Clearance
Terminal to base plate 10.6 - -
(Note7)
Unit
mm
mm
Publication Date : February 2014
3
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