<IGBT Modules>
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
TERMINAL
SECTION A INTERNAL CONNECTION
Tolerance otherwise specified
K(8)
Es
(4)
Di
G
(3)
Th
TH1
(6)
TH2
(5)
E(7)
A(1)
C(2)
NTC
Tr
Division of Dimension
Tolerance
0.5
to 3
±0.2
over 3
to 6
±0.3
over 6
to 30
±0.5
over 30
to 120
±0.8
over 120
to 400
±1.2
CM200EXS-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
Brake-chopper
APPLICATION
Brake
Collector current IC .............….......................… 2 0 0 A
Collector-emitter voltage V
Maximum junction temperature T
......................… 1 7 0 0 V
CES
.............. 1 7 5 °C
jmax
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliant
●Recognized under UL1557, File E323585
The tolerance of size between
terminals is assumed to be ±0.4.
t=0.8
Publication Date : February 2015
1
Ver.1.3
<IGBT Modules>
CM200EXS-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
V
Collector-emitter voltage
G-E short-circuited
1700
V
V
Gate-emitter voltage
C-E short-circuited
± 20
V
IC
DC, TC=125 °C
200
(Note2)
P
Total power dissipation
TC=25 °C
(Note1, 3)
2000
W
Symbol
Item
Conditions
Rating
Unit
IF
DC
(Note1)
200
I
FRM
Pulse, Repetitive
(Note2)
400
Symbol
Item
Conditions
Rating
Unit
T
Maximum junction temperature
Instantaneous event (overload)
175
T
Cmax
Maximum case temperature
(Note3)
125
T
jop
Operating junction temperature
Continuous operation (under switching)
-40 ~ +150
Limits
I
Collector-emitter cut-off current
VCE=V
CES
, G-E short-circuited
- - 1.0
mA
I
GES
Gate-emitter leakage current
VGE=V
GES
, C-E short-circuited
- - 0.5
μA
V
Gate-emitter threshold voltage
IC=20 mA, VCE=10 V
5.4
6.0
6.6
V
Refer to the figure of test circuit.
Tj=125 °C
-
2.20
-
Tj=150 °C
-
2.25
-
IC=200 A,
Tj=25 °C
-
1.90
2.40
(Note5)
Tj=150 °C
-
2.15
-
C
ies
Input capacitance
- - 53
C
Output capacitance
- - 4.3
QG
Gate charge
VCC=1000 V, IC=200 A, VGE=15 V
-
1100 - nC
t
d(on)
Turn-on delay time
- - 400
tr
Rise time
- - 100
tf
Fall time - -
600
Eon
Turn-on s witching energy per pulse
VCC=1000 V, IC=IE=200 A,
-
28
-
E
Turn-off switching energy per pulse
VGE=±15 V, RG=0 Ω, Tj=150 °C,
-
52
-
(Note3)
rg
Internal gate resistance
- - 2.5 - Ω
MAXI MUM RATINGS (Tj=25 °C, unless otherwise specified)
IGBT PART
Symbol Item Conditions Rating Unit
CES
GES
I
Pulse, Repetitive
CRM
tot
Collector current
DIODE PART
V
Repetitive peak reverse voltage - 1700 V
RRM
(Note1, 3)
400
A
Forward current
MODULE
V
Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 4000 V
isol
jmax
T
Storage temperature - -40 ~ +125
stg
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)
IGBT PART
Symbol Item Conditions
CES
GE(th)
V
Ce sat
(Terminal)
IC=200 A, VGE=15 V, Tj=25 °C - 2.00 2.50
(Note5)
Collector-emitter saturation voltage
V
Ce sat
(Chip)
VGE=15 V, Tj=125 °C - 2.10 -
Min. Typ. Max.
A
°C
°C
Unit
V
V
oes
C
Reverse transfer capacitance - - 0.97
res
VCE=10 V, G-E short-circuited
VCC=1000 V, IC=200 A, VGE=±15 V,
t
Turn-off delay time
d(off)
off
R
Internal lead resistance
CC'+EE'
Publication Date : February 2015
Ver.1.3
R
=0 Ω, Inductive load
G
Main terminals-chip, per switch,
TC=25 °C
2
- - 700
- - 2.0 mΩ
nF
ns
mJ
<IGBT Modules>
CM200EXS-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
Min.
Typ.
Max.
I
Reverse current
VR=V
RRM
- -
1.0
mA
IF=200 A,
Tj=25 °C
-
4.1
5.3
(Note5)
Tj=150 °C
-
2.7
-
IF=200 A,
Tj=25 °C
-
4.0
5.2
Tj=125 °C
-
2.8
-
(Note5)
t
Reverse recovery time
VCC=1000 V, IF=200 A, VGE=±15 V,
- - 300
ns
Qrr
Reverse recovery charge
RG=0 Ω, Inductive load
-
8.0 - μC
VCC=1000 V, IF=200 A, VGE=±15 V,
RG=0 Ω, Tj=150 °C, Inductive load
R25
Zero-power resistance
TC=25 °C
(Note3)
4.85
5.00
5.15
kΩ ΔR/R
Deviation of resistance
R
100
=493 Ω, TC=100 °C
-7.3 - +7.8
%
(Note5)
(Note3)
Limits
Min.
Typ.
Max.
R
th(j- c)Q
Junction to case, per IGBT
(Note3)
- - 0.075
(Note3)
Case to heat sink, per 1 module,
(Note3, 6)
Limits
Min.
Typ.
Max.
Ms
Mounting to heat sink
M 5 screw
2.5
3.0
3.5
Terminal to terminal
20.6 - -
Terminal to base plate
17 - -
Terminal to base plate
10.6 - -
m
mass - -
210 - g
ec
Flatness of base plate
On the centerline X, Y
(Note7)
-100 - +100
μm
ELECTRICAL CHARACTERISTICS (cont.; Tj=25 °C, unless otherwise specified)
DIODE PART
Symbol Item Conditions
RRM
V
F
(Terminal)
V
F
(Chip)
rr
Emitter-collector voltage
Refer to the figure of test circuit. Tj=125 °C - 2.9 -
Tj=150 °C - 2.6 -
Limits
Unit
V
V
Err Reverse recovery energy per pulse
NTC THERMISTOR P ART
Symbol Item Conditions
B
B-constant Approximate by equation
(25/50)
P25 Power dissipation TC=25 °C
- - 10 mW
THERMAL RESISTANCE CHARACTERISTICS
Symbol Item Conditions
R
th(j- c)D
R
Contact thermal resistance
th(c- s )
Thermal resistance
Junction to case, per DIODE
Thermal grease applied
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Mt
Mounting torque
ds Creepage distance
Main terminals M 5 screw 2.5 3.0 3.5
- 42 - mJ
Limits
Min. Typ. Max.
(Note3)
- 3375 - K
- - 0.12
- 25 - K/kW
Unit
Unit
K/W
Unit
N·m
mm
da Cl earanc e di st ance
Publication Date : February 2015
Ver.1.3
Terminal to terminal 12 - -
3
mm
<IGBT Modules>
CM200EXS-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
This product is compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic
Equipment (RoHS) directive 2011/65/EU.
Note1.
Junction temperature (Tj) should not increase beyond T
jmax
rating.
Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed T
jmax
rating.
just under the chips. Refer to the figure of chip location.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
)
TT
/()
R
R
ln(B
)/(
502550
25
5025
11
−=
R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]
R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]
6.
Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
Y
X
+:Convex
-:Concave
+:Convex
-:Concave
mounting side
mounting side
mounting
side
Use the following screws when mounting the printed circuit board (PCB) on the standoffs.
The length of the screw depends on the thickness (t1.6~t2.0) of the PCB.
Limits
VCC
(DC) Supply voltage
Applied across C-E/A-K
-
1000
1200
V
V
GEon
Gate (-emitter drive) voltage
Applied across G-Es
13.5
15.0
16.5
V
RG
External gate resistance
- 0 - 38
Ω
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr: IGBT, Di: DIODE, T h: NTC thermistor
2.
3.
Case temperature (TC) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate and heat sink
4.
5.
7.
8.
"φ2.6×10 or φ2.6×12, B1 tapping screw"
RECOMMENDED OPERATING CONDITIONS
Symbol Item Conditions
Min. Typ. Max.
Unit
Publication Date : February 2015
Ver.1.3
4
<IGBT Modules>
CM200EXS-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
VCC
-VGE
+VGE
+
vCE
vGE
0
iF
iC
K
E
A
G
Es
Load
RG
C
～
t
tf
tr
t
d(on)
iC
10%
90 %
90 %
vGE
～
～
～
0 V
0 A
0
t
d(off)
t
Irr
Qrr=0.5×Irr×trr
0.5×Irr
t
trr
iF
0 A
IF
0.1×ICM
ICM
VCC
vCE
iC
t
0
ti
0.1×VCC
0.1×VCC
VCC
ICM
vCE
iC
t
0
0.02×ICM
ti
IEM
vEC
iE
t
0 V
ti
t
VCC
0 A
IGBT T urn-on switching energy
IGBT Turn-off switching energy
DIODE Reverse recovery energy
VGE=15V
K
C
E
IC
G
Es
V
A
K
C
E
IF
G
Es
V
A
TEST CIRCUIT AND WAVEFORMS
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
TEST CIRCUIT
Switching characteristics test circuit and waveforms trr, Qrr test waveform
V
test circuit VF test circuit
CEsat
Publication Date : February 2015
Ver.1.3
5
<IGBT Modules>
CM200EXS-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE
(TYPICAL)
Tj=25 °C
(Chip)
VGE=15 V
(Chip)
COLLECTOR CURRENT I
(A)
SATURATION VOLTAGE V
CEsat
(V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
DIODE
(TYPICAL)
G-E short-circuited
(Chip)
EMITTER CURRENT I
E
(A)
EMITTER-COLL ECTOR VOLTAGE VEC (V)
0
50
100
150
200
250
300
350
400
0 2 4 6 8 10
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0 100 200 300 400
10
100
1000
0 1 2 3 4 5 6
PERFORMANCE CURVES
IGBT / DIODE PART
OUTPUT CHARACTERISTICS
CHARACTERISTICS
VGE=20 V
15 V
11 V
Tj=150 °C
C
Tj=125 °C
10 V
Tj=25 °C
9 V
8 V
COLLECTOR-EMITTER
FORWARD CHARACTERISTICS
Publication Date : February 2015
Ver.1.3
Tj=125 °C
Tj=150 °C
Tj=25 °C
6
<IGBT Modules>
CM200EXS-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
(TYPICAL)
HALF-BRIDGE
(TYPICAL)
SWITCHING TIME (ns)
SWITCHING TIME (ns)
COLLECTOR CURRENT IC (A)
EXTERNAL GATE RESISTANCE RG (Ω)
HALF-BRIDGE
(TYPICAL)
HALF-BRIDGE
(TYPICAL)
VCC=1000 V, VGE=±15 V, RG=0 Ω,
VCC=1000 V, VGE=±15 V, IC=200 A,
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
COLLECTOR CURRENT IC (A)
EXTERNAL GATE RESISTANCE RG (Ω)
EMITTER CURRENT IE (A)
10
100
1000
10 100 1000
10
100
1000
10000
0.1 1 10 100
1
10
100
1000
10 100 1000
0.1
1
10
100
10
100
1000
0.1 1 10 100
Err
tr
t
PERFORMANCE CURVES
IGBT / DIODE PART
SWITCHING CHARACTERISTICS
VCC=1000 V , VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD
d(off)
t
d(on)
---------------: T
t
f
=150 °C, - - - - -: Tj=125 °C
j
SWITCHING CHARACTERISTICS
VCC=1000 V, VGE=±15 V, IC=200 A, INDUCTIVE LOAD
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
t
t
d(off)
d(on)
tf
tr
SWITCHING CHARACTERISTICS
INDUCTIVE LOAD, PER PULSE
E
rr
E
off
E
on
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
SWITCHING CHARACTERISTICS
INDUCTIVE LOAD, PER PULSE
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
Eon
E
off
Publication Date : February 2015
Ver.1.3
7
<IGBT Modules>
CM200EXS-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
(TYPICAL)
DIODE
(TYPICAL)
CAPACITANCE (nF)
t
rr
(ns), I
rr
(A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
EMITTER CURRENT IE (A)
(TYPICAL)
(MAXIMUM)
GATE-EMITTER VOLTAGE V
(V)
Z
th(j-c)
GATE CHARGE QG (nC)
TIME (S)
0.1
1
10
100
1000
0.1 1 10 100
10
100
1000
10 100 1000
0
5
10
15
20
0 200 400 600 800 1000 1200 1400 1600 1800
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
PERFORMANCE CURVES
IGBT / DIODE PART
CAPACITANCE CHARACTERISTICS
G-E short-circuited, Tj=25 °C
REVERSE RECOVERY CHARACTERISTICS
VCC=1000 V , VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD
---------------: T
C
ies
trr
Irr
C
oes
=150 °C, - - - - -: Tj=125 °C
j
C
res
GATE CHARGE CHARACTERISTICS
VCC=1000 V, IC=200 A, Tj=25 °C
GE
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
Single pulse, TC=25 °C
R
th(j- c)Q
=0.075 K/W, R
th(j- c)D
=0.12 K/W
Publication Date : February 2015
Ver.1.3
NORMALIZED TR ANSIENT TH ERMAL RESISTANCE
8
<IGBT Modules>
CM200EXS-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
(TYPICAL)
RESISTANCE R (kΩ)
TEMPERATURE T (°C)
0.1
1
10
100
-50 -25 0 25 50 75 100 125
PERFORMANCE CURVES
NTC thermistor part
TEMPERATURE CHARACTERISTICS
Publication Date : February 2015
Ver.1.3
9
<IGBT Modules>
CM200EXS-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
Keep safety first in your cir c uit des igns!
Mitsubishi Electric Corpor ation puts the maxi mum effort into making se miconductor products better and mor e
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flam m abl e material or (iii) prevention a gai ns t any malfunction or mishap.
Notes regarding these ma t er ials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer's application; they do not convey any license under any
intellectual property right s, or any other rights, belo nging to Mitsubishi Electri c Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these mater ials.
•All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are subject
to change by Mitsub ishi Elect ric Corporat ion without notice due to product improveme nts or other r easons. It
is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product
listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi
Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi S em iconductor home page (www.MitsubishiElectric.com/semiconductors/).
•When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate al l information as a total syst em before making
a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes
no responsibility for any damage, liability or other lo s s r esulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or systems
for transportation, vehi cular, med ical, aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or
in part these materials.
•If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other than
the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubis hi Electr ic Corporat ion or an aut horized M itsubishi S emico nductor pr oduct distri butor
for further details on these materials or the products contained t herein.
© 2013-2015 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : February 2015
Ver.1.3
10
Loading...