Mitsubishi Electric US, Inc CM200EXS-34SA Data Sheet
<IGBT Modules>
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
TERMINAL
SECTION A INTERNAL CONNECTION
Tolerance otherwise specified
K(8)
Es
(4)
Di
G
(3)
Th
TH1
(6)
TH2
(5)
E(7)
A(1)
C(2)
NTC
Tr
Division of Dimension
Tolerance
0.5
to 3
±0.2
over 3
to 6
±0.3
over 6
to 30
±0.5
over 30
to 120
±0.8
over 120
to 400
±1.2
CM200EXS-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
Brake-chopper
APPLICATION
Brake
Collector current IC .............….......................… 2 0 0 A
Collector-emitter voltage V
Maximum junction temperature T
......................… 1 7 0 0 V
CES
.............. 1 7 5 °C
jmax
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliant
●Recognized under UL1557, File E323585
The tolerance of size between
terminals is assumed to be ±0.4.
t=0.8
Publication Date : February 2015
1
Ver.1.3
<IGBT Modules>
CM200EXS-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
V
Collector-emitter voltage
G-E short-circuited
1700
V
V
Gate-emitter voltage
C-E short-circuited
± 20
V
IC
DC, TC=125 °C
200
(Note2)
P
Total power dissipation
TC=25 °C
(Note1, 3)
2000
W
Symbol
Item
Conditions
Rating
Unit
IF
DC
(Note1)
200
I
FRM
Pulse, Repetitive
(Note2)
400
Symbol
Item
Conditions
Rating
Unit
T
Maximum junction temperature
Instantaneous event (overload)
175
T
Cmax
Maximum case temperature
(Note3)
125
T
jop
Operating junction temperature
Continuous operation (under switching)
-40 ~ +150
Limits
I
Collector-emitter cut-off current
VCE=V
CES
, G-E short-circuited
- - 1.0
mA
I
GES
Gate-emitter leakage current
VGE=V
GES
, C-E short-circuited
- - 0.5
μA
V
Gate-emitter threshold voltage
IC=20 mA, VCE=10 V
5.4
6.0
6.6
V
Refer to the figure of test circuit.
Tj=125 °C
-
2.20
-
Tj=150 °C
-
2.25
-
IC=200 A,
Tj=25 °C
-
1.90
2.40
(Note5)
Tj=150 °C
-
2.15
-
C
ies
Input capacitance
- - 53
C
Output capacitance
- - 4.3
QG
Gate charge
VCC=1000 V, IC=200 A, VGE=15 V
-
1100 - nC
t
d(on)
Turn-on delay time
- - 400
tr
Rise time
- - 100
tf
Fall time - -
600
Eon
Turn-on s witching energy per pulse
VCC=1000 V, IC=IE=200 A,
-
28
-
E
Turn-off switching energy per pulse
VGE=±15 V, RG=0 Ω, Tj=150 °C,
-
52
-
(Note3)
rg
Internal gate resistance
- - 2.5 - Ω
MAXI MUM RATINGS (Tj=25 °C, unless otherwise specified)
IGBT PART
Symbol Item Conditions Rating Unit
CES
GES
I
Pulse, Repetitive
CRM
tot
Collector current
DIODE PART
V
Repetitive peak reverse voltage - 1700 V
RRM
(Note1, 3)
400
A
Forward current
MODULE
V
Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 4000 V
isol
jmax
T
Storage temperature - -40 ~ +125
stg
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)
IGBT PART
Symbol Item Conditions
CES
GE(th)
V
Ce sat
(Terminal)
IC=200 A, VGE=15 V, Tj=25 °C - 2.00 2.50
(Note5)
Collector-emitter saturation voltage
V
Ce sat
(Chip)
VGE=15 V, Tj=125 °C - 2.10 -
Min. Typ. Max.
A
°C
°C
Unit
V
V
oes
C
Reverse transfer capacitance - - 0.97
res
VCE=10 V, G-E short-circuited
VCC=1000 V, IC=200 A, VGE=±15 V,
t
Turn-off delay time
d(off)
off
R
Internal lead resistance
CC'+EE'
Publication Date : February 2015
Ver.1.3
R
=0 Ω, Inductive load
G
Main terminals-chip, per switch,
TC=25 °C
2
- - 700
- - 2.0 mΩ
nF
ns
mJ
<IGBT Modules>
CM200EXS-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
Min.
Typ.
Max.
I
Reverse current
VR=V
RRM
- -
1.0
mA
IF=200 A,
Tj=25 °C
-
4.1
5.3
(Note5)
Tj=150 °C
-
2.7
-
IF=200 A,
Tj=25 °C
-
4.0
5.2
Tj=125 °C
-
2.8
-
(Note5)
t
Reverse recovery time
VCC=1000 V, IF=200 A, VGE=±15 V,
- - 300
ns
Qrr
Reverse recovery charge
RG=0 Ω, Inductive load
-
8.0 - μC
VCC=1000 V, IF=200 A, VGE=±15 V,
RG=0 Ω, Tj=150 °C, Inductive load
R25
Zero-power resistance
TC=25 °C
(Note3)
4.85
5.00
5.15
kΩ ΔR/R
Deviation of resistance
R
100
=493 Ω, TC=100 °C
-7.3 - +7.8
%
(Note5)
(Note3)
Limits
Min.
Typ.
Max.
R
th(j- c)Q
Junction to case, per IGBT
(Note3)
- - 0.075
(Note3)
Case to heat sink, per 1 module,
(Note3, 6)
Limits
Min.
Typ.
Max.
Ms
Mounting to heat sink
M 5 screw
2.5
3.0
3.5
Terminal to terminal
20.6 - -
Terminal to base plate
17 - -
Terminal to base plate
10.6 - -
m
mass - -
210 - g
ec
Flatness of base plate
On the centerline X, Y
(Note7)
-100 - +100
μm
ELECTRICAL CHARACTERISTICS (cont.; Tj=25 °C, unless otherwise specified)
DIODE PART
Symbol Item Conditions
RRM
V
F
(Terminal)
V
F
(Chip)
rr
Emitter-collector voltage
Refer to the figure of test circuit. Tj=125 °C - 2.9 -
Tj=150 °C - 2.6 -
Limits
Unit
V
V
Err Reverse recovery energy per pulse
NTC THERMISTOR P ART
Symbol Item Conditions
B
B-constant Approximate by equation
(25/50)
P25 Power dissipation TC=25 °C
- - 10 mW
THERMAL RESISTANCE CHARACTERISTICS
Symbol Item Conditions
R
th(j- c)D
R
Contact thermal resistance
th(c- s )
Thermal resistance
Junction to case, per DIODE
Thermal grease applied
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Mt
Mounting torque
ds Creepage distance
Main terminals M 5 screw 2.5 3.0 3.5
- 42 - mJ
Limits
Min. Typ. Max.
(Note3)
- 3375 - K
- - 0.12
- 25 - K/kW
Unit
Unit
K/W
Unit
N·m
mm
da Cl earanc e di st ance
Publication Date : February 2015
Ver.1.3
Terminal to terminal 12 - -
3
mm
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