)
(2)
< IGBT MODULES >
CM200EXS-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Colle
Collector-emitter voltage V
Maximum junction temperature T
Single switch
APPLICATION
Brake
OUTLINE DRAWING & INTERNAL CONNECTION
ctor current I
.............….......................… 200A
C
......................… 1200V
CES
.............. 175°C
jmax
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliant
●Recognized under UL1557, File E323585
Dimension in mm
TERMINAL SECTION A
t=0.8
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
The tolerance of size between
terminals is assumed to be ±0.4.
INTERNAL CONNECTION
E(7
K( 8)
TH1
(6 )
TH2
Es
G
(4)
(5 )
(3)
Th
NT C
Tr
Di
C
A( 1)
Publication Date : June 2013
1
< IGBT MODULES >
CM200EXS-24S
HIGH POWER SWITCHING USE
INSULA
ABSOLUTE MAXIMUM RATINGS (T
IGBT
V
V
IC DC, TC=119 °C
I
P
DIODE
V
IF
I
MODULE
V
T
T
T
T
TED TYPE
=25 °C, unless otherwise specified)
j
Symbol Item Conditions Rating Unit
Collector-emitter voltage G-E short-circuited 1200 V
CES
Gate-emitter voltage C-E short-circuited ± 20 V
GES
CRM
Total power dissipation TC=25 °C
tot
Collector current
Pulse, Repetitive
Symbol Item Conditions Rating Unit
Repetitive peak reverse voltage - 1200 V
FRM
RRM
Forward current
(Note1)
200
Pulse, Repetitive
Symbol Item Conditions Rating Unit
Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 4000 V
isol
Maximum junction temperature Instantaneous event (overload) 175
jmax
Maximum case temperature
Cmax
Operating junction temperature Continuous operation (under switching) -40 ~ +150
jop
Storage temperature - -40 ~ +125
stg
(Note3)
125
(Note1, 3)
200
(Note2)
(Note1, 3)
400
1500 W
(Note2)
400
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)
IGBT
Symbol Item Conditions
I
Collector-emitter cut-off current VCE=V
CES
I
Gate-emitter leakage current VGE=V
GES
V
Gate-emitter threshold voltage IC=20 mA, VCE=10 V 5.4 6.0 6.6 V
GE(th)
IC=200 A
, G-E short-circuited - - 1.0 mA
CES
, C-E short-circuited - - 0.5 μA
GES
(Note4)
, Tj=25 °C - 1.80 2.25
VGE=15 V, Tj=125 °C - 2.00 -
V
CEsat
Collector-emitter saturation voltage
(Terminal) Tj=150 °C - 2.05 -
IC=200 A
(Note4)
, Tj=25 °C - 1.70 2.15
VGE=15 V, Tj=125 °C - 1.90 -
(Chip) T
C
Input capacitance - - 20
ies
V
C
Output capacitance - - 4.0
oes
C
Reverse transfer capacitance
res
=10 V, G-E short-circuited
CE
=150 °C - 1.95 -
j
QG Gate charge VCC=600 V, IC=200 A, VGE=15 V - 466 - nC
t
Turn-on delay time - - 800
d(on)
tr Rise time
t
Turn-off delay time - - 600
d(off)
tf Fall time
=600 V, IC=200 A, VGE=±15 V,
V
CC
=0 Ω, Inductive load
R
G
Eon Turn-on switching energy per pulse VCC=600 V, IF=200 A, VGE=±15 V, - 30.7 -
E
Turn-off switching energy per pulse RG=0 Ω, Tj=150 °C, Inductive load - 21.5 -
off
R
Internal lead resistance
CC'+EE'
Main terminals-chip, per element,
=25 °C
T
C
(Note3)
rg Internal gate resistance - - 9.8 - Ω
Limits
Min. Typ. Max.
- - 0.33
- - 200
- - 300
- - 2.0 mΩ
Unit
V
V
nF
ns
mJ
Publication Date : June 2013
2
< IGBT MODULES >
CM200EXS-24S
HIGH POWER SWITCHING USE
INSULA
ELECTRICAL CHARACTERISTICS (cont; T
DIODE
I
V
trr Reverse recovery time VCC=600 V, IF=200 A, VGE=±15 V, - - 300 ns
Qrr Reverse recovery charge RG=0 Ω, Inductive load - 10.7 - μC
Err Reverse recovery energy per pulse
NTC THERMISTOR
R25 Zero-power resistance TC=25 °C
∆R/R Deviation of resistance R
B
P25 Power dissipation TC=25 °C
TED TYPE
=25 °C, unless otherwise specified)
j
Symbol Item Conditions
Reverse current VR=V
RRM
IF=200 A
T
F
Forward voltage
(Terminal) Tj=150 °C - 1.8 -
IF=200 A
T
(Chip) T
VCC=600 V, IF=200 A, VGE=±15 V, RG=0 Ω,
T
Symbol Item Conditions
B-constant Approximate by equation
(25/50)
- - 1.0 mA
RRM
(Note4)
, Tj=25 °C - 1.8 2.25
=125 °C - 1.8 -
j
(Note4)
, Tj=25 °C - 1.7 2.15
=125 °C - 1.7 -
j
=150 °C - 1.7 -
j
=150 °C, Inductive load
j
(Note3)
4.85 5.00 5.15 kΩ
=493 Ω, TC=100 °C
100
(Note3)
- - 10 mW
(Note3)
-7.3 - +7.8 %
(Note5)
- 3375 - K
Limits
Min. Typ. Max.
- 14.2 - mJ
Limits
Min. Typ. Max.
Unit
V
V
Unit
THERMAL RESISTANCE CHARACTERISTICS
Symbol Item Conditions
R
R
R
Junction to case, IGBT
th(j-c)Q
th(j-c)D
Contact thermal resistance
th(c-s)
Thermal resistance
Junction to case, DIODE
Case to heat sink, per 1 module,
Thermal grease applied
(ote3)
- - 0.10
(Note3)
- - 0.19
(Note3, 6)
Limits
Min. Typ. Max.
- 25 - K/kW
Unit
K/W
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Mt Mounting torque Main terminals M 5 screw 2.5 3.0 3.5 N·m
Ms Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m
ds Creepage distance
da Clearance
Terminal to terminal 20.6 - -
Terminal to base plate 17 - -
Terminal to terminal 12 - -
Terminal to base plate 10.6 - -
m Weight - - 210 - g
ec Flatness of base plate On the centerline X, Y
(Note7)
-100 - +100 μm
Limits
Min. Typ. Max.
Unit
mm
mm
Publication Date : June 2013
3
< IGBT MODULES >
CM200EXS-24S
HIGH POWER SWITCHING USE
INSULA
Note1. Junction temperature (T
TED TYPE
) should not increase beyond T
j
2. Pulse width and repetition rate should be such that the device junction temperature (T
3. Case temperature (T
) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate and heat sink
C
just under the chips. Refer to the figure of chip location.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Refer to the figure of test circuit.
R
5.
5025
: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]
R
25
: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]
R
50
25
ln(B
)/(
/()
R
11
,
)
TT
502550
6. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
7. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
Y
+:Convex
mounting side
-:Concave
X
mounting
side
-:Concave
jmax
rating.
) dose not exceed T
j
jmax
rating.
mounting side
+:Convex
8. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"φ2.6×10 or φ2.6×12 self tapping screw"
The length of the screw depends on thickness (t1.6~t2.0) of the PCB.
RECOMMENDED OPERATING CONDITIONS
Symbol Item Conditions
VCC (DC) Supply voltage Applied across C-E/A-K terminals - 600 850 V
V
Gate (-emitter drive) voltage Applied across G-Es terminals 13.5 15.0 16.5 V
GEon
RG External gate resistance - 0 - 22 Ω
CHIP LOCATION (Top view)
Limits
Min. Typ. Max.
Dimension in mm, tolerance: ±1 mm
Unit
Publication Date : June 2013
Tr: IGBT, Di: CLAMP DIODE, Th: NTC thermistor
4
< IGBT MODULES >
C
E
C A
C A
CM200EXS-24S
HIGH POWER SWITCHING USE
INSULA
TEST CIRCUIT AND WAVEFORMS
0 V
TED TYPE
vCE
RG
GE
GE
+V
-V
K
A
C
G
vGE
Es
E
Switching characteristics test circuit and waveforms trr, Qrr test waveform
i
I
CM
VCC
C
iF
Load
v
v
GE
0V
V
+
CC
i
C
iC
0 A
t
d(on)
～
～
90 %
0
～
～
90 %
iF
t
IF
0 A
=0.5× Irr×t
Q
rr
t
rr
rr
t
Irr
0.5×I
10%
t
r
t
d(off)
t
f
t
rr
i
C
V
CC
ICM
v
CE
iF
0 A
IFM
v
KA
V
CC
t
0.1×I
0
CM
0.1×VCC
t
ti
0.1×V
CC
t
i
0.02×I
CM
t0
t
i
IGBT Turn-on switching energy IGBT Turn-off switching energy DIODE Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
K
I
F
V
G
Es
E
VGE=15 V
G
Es
K
V
IC
E
V
CEsat
test circuit
VF test circuit
t0 V
Publication Date : June 2013
5
< IGBT MODULES >
CM200EXS-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
IGBT/DIODE
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
(A)
C
COLLECTOR CURRENT I
T =25 °C
j GE
400
VGE=20 V
350
15 V
300
250
200
150
100
50
0
0246810
13.5 V
12 V
11 V
10 V
9 V
(Chip)
(V)
CEsat
COLLECTOR-EMITTER
SATURATION VOLTAGE V
V =15 V
3.5
3
2.5
2
1.5
1
0.5
0
0 100 200 300 400
Tj=125 °C
Tj=150 °C
Tj=25 °C
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
FORWARD CHARACTERISTICS
DIODE
(TYPICAL)
(Chip)
10
T =25 °C
j
(Chip)
1000
Tj=125 °C
8
(V)
CEsat
6
IC=400 A
IC=200 A
(A)
F
Tj=150 °C
IC=80 A
100
4
COLLECTOR-EMITTER
2
FORWARD CURRENT I
Tj=25 °C
SATURATION VOLTAGE V
0
6 8 10 12 14 16 18 20
10
0.5 1 1.5 2 2.5
GATE-EMITTER VOLTAGE VGE (V) FORWARD VOLTAGE VF (V)
(Chip)
Publication Date : June 2013
6
< IGBT MODULES >
CM200EXS-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
IGBT/DIODE
SWITCHING CHARACTERISTICS
VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD
1000
---------------: T
t
d(off)
tf
HALF-BRIDGE
(TYPICAL)
=150 °C, - - - - -: Tj=125 °C
j
SWITCHING CHARACTERISTICS
HALF-BRIDGE
(TYPICAL)
VCC=600 V, VGE=±15 V, IC=200 A, INDUCTIVE LOAD
1000
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
t
t
d(off)
d(on)
t
d(on)
100
SWITCHING TIME (ns)
tr
10
10 100 1000
100
SWITCHING TIME (ns)
10
0.1 1 10 100
COLLECTOR CURRENT IC (A) EXTERNAL GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 Ω,
INDUCTIVE LOAD, PER PULSE
100
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
100
SWITCHING CHARACTERISTICS
VCC=600 V, VGE=±15 V, IC/IF=200 A,
INDUCTIVE LOAD, PER PULSE
---------------: T
HALF-BRIDGE
(TYPICAL)
=150 °C, - - - - -: Tj=125 °C
j
t
r
t
f
10
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
1
10 100 1000
COLLECTOR CURRENT IC (A)
FORWARD CURRENT I
Publication Date : June 2013
Eon
E
Err
(A)
F
E
on
off
10
E
off
E
rr
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
1
0.1 1 10 100
EXTERNAL GATE RESISTANCE R
G
(Ω)
7
< IGBT MODULES >
CM200EXS-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
IGBT/DIODE
100
CAPACITANCE CHARACTERISTICS
(TYPICAL)
G-E short-circuited, Tj=25 °C
REVERSE RECOVERY CHARACTERISTICS
DIODE
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD
1000
C
ies
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
10
(A)
rr
100
(ns), I
rr
t
10
10 100 1000
1
CAPACITANCE (nF)
0.1
0.01
0.1 1 10 100
C
oes
C
res
COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD CURRENT IF (A)
GATE CHARGE CHARACTERISTICS
20
VCC=600 V, IC=200 A, Tj=25 °C
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
Single pulse, TC=25 °C
R
1
th(j-c)Q
=0.10 K/W, R
th(j-c)D
t
rr
I
rr
=0.19 K/W
15
(V)
GE
0.1
10
5
th(j-c)
Z
0.01
GATE-EMITTER VOLTAGE V
NORMALIZED TRANSIENT THERMAL RESISTANCE
0
0 100 200 300 400 500 600 700
GATE CHARGE QG (nC) TIME (S)
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Publication Date : June 2013
8
< IGBT MODULES >
CM200EXS-24S
HIGH POWER SWITCHING USE
INSULA
PERFORMANCE CURVES
NTC THERMISTOR
TED TYPE
TEMPERATURE CHARACTERISTICS
(TYPICAL)
100
10
1
RESISTANCE R (kΩ)
0.1
-50 -25 0 25 5 0 75 100 125
TEMPERATURE T (°C)
Publication Date : June 2013
9
< IGBT MODULES >
CM200EXS-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
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Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
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Publication Date : June 2013
10
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