Mitsubishi Electric US, Inc CM200EXS-24S Data Sheet
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(2)
< IGBT MODULES >
CM200EXS-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Colle
Collector-emitter voltage V
Maximum junction temperature T
Single switch
APPLICATION
Brake
OUTLINE DRAWING & INTERNAL CONNECTION
ctor current I
.............….......................… 200A
C
......................… 1200V
CES
.............. 175°C
jmax
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliant
●Recognized under UL1557, File E323585
Dimension in mm
TERMINAL SECTION A
t=0.8
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
The tolerance of size between
terminals is assumed to be ±0.4.
INTERNAL CONNECTION
E(7
K( 8)
TH1
(6 )
TH2
Es
G
(4)
(5 )
(3)
Th
NT C
Tr
Di
C
A( 1)
Publication Date : June 2013
1
< IGBT MODULES >
CM200EXS-24S
HIGH POWER SWITCHING USE
INSULA
ABSOLUTE MAXIMUM RATINGS (T
IGBT
V
V
IC DC, TC=119 °C
I
P
DIODE
V
IF
I
MODULE
V
T
T
T
T
TED TYPE
=25 °C, unless otherwise specified)
j
Symbol Item Conditions Rating Unit
Collector-emitter voltage G-E short-circuited 1200 V
CES
Gate-emitter voltage C-E short-circuited ± 20 V
GES
CRM
Total power dissipation TC=25 °C
tot
Collector current
Pulse, Repetitive
Symbol Item Conditions Rating Unit
Repetitive peak reverse voltage - 1200 V
FRM
RRM
Forward current
(Note1)
200
Pulse, Repetitive
Symbol Item Conditions Rating Unit
Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 4000 V
isol
Maximum junction temperature Instantaneous event (overload) 175
jmax
Maximum case temperature
Cmax
Operating junction temperature Continuous operation (under switching) -40 ~ +150
jop
Storage temperature - -40 ~ +125
stg
(Note3)
125
(Note1, 3)
200
(Note2)
(Note1, 3)
400
1500 W
(Note2)
400
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)
IGBT
Symbol Item Conditions
I
Collector-emitter cut-off current VCE=V
CES
I
Gate-emitter leakage current VGE=V
GES
V
Gate-emitter threshold voltage IC=20 mA, VCE=10 V 5.4 6.0 6.6 V
GE(th)
IC=200 A
, G-E short-circuited - - 1.0 mA
CES
, C-E short-circuited - - 0.5 μA
GES
(Note4)
, Tj=25 °C - 1.80 2.25
VGE=15 V, Tj=125 °C - 2.00 -
V
CEsat
Collector-emitter saturation voltage
(Terminal) Tj=150 °C - 2.05 -
IC=200 A
(Note4)
, Tj=25 °C - 1.70 2.15
VGE=15 V, Tj=125 °C - 1.90 -
(Chip) T
C
Input capacitance - - 20
ies
V
C
Output capacitance - - 4.0
oes
C
Reverse transfer capacitance
res
=10 V, G-E short-circuited
CE
=150 °C - 1.95 -
j
QG Gate charge VCC=600 V, IC=200 A, VGE=15 V - 466 - nC
t
Turn-on delay time - - 800
d(on)
tr Rise time
t
Turn-off delay time - - 600
d(off)
tf Fall time
=600 V, IC=200 A, VGE=±15 V,
V
CC
=0 Ω, Inductive load
R
G
Eon Turn-on switching energy per pulse VCC=600 V, IF=200 A, VGE=±15 V, - 30.7 -
E
Turn-off switching energy per pulse RG=0 Ω, Tj=150 °C, Inductive load - 21.5 -
off
R
Internal lead resistance
CC'+EE'
Main terminals-chip, per element,
=25 °C
T
C
(Note3)
rg Internal gate resistance - - 9.8 - Ω
Limits
Min. Typ. Max.
- - 0.33
- - 200
- - 300
- - 2.0 mΩ
Unit
V
V
nF
ns
mJ
Publication Date : June 2013
2
< IGBT MODULES >
CM200EXS-24S
HIGH POWER SWITCHING USE
INSULA
ELECTRICAL CHARACTERISTICS (cont; T
DIODE
I
V
trr Reverse recovery time VCC=600 V, IF=200 A, VGE=±15 V, - - 300 ns
Qrr Reverse recovery charge RG=0 Ω, Inductive load - 10.7 - μC
Err Reverse recovery energy per pulse
NTC THERMISTOR
R25 Zero-power resistance TC=25 °C
∆R/R Deviation of resistance R
B
P25 Power dissipation TC=25 °C
TED TYPE
=25 °C, unless otherwise specified)
j
Symbol Item Conditions
Reverse current VR=V
RRM
IF=200 A
T
F
Forward voltage
(Terminal) Tj=150 °C - 1.8 -
IF=200 A
T
(Chip) T
VCC=600 V, IF=200 A, VGE=±15 V, RG=0 Ω,
T
Symbol Item Conditions
B-constant Approximate by equation
(25/50)
- - 1.0 mA
RRM
(Note4)
, Tj=25 °C - 1.8 2.25
=125 °C - 1.8 -
j
(Note4)
, Tj=25 °C - 1.7 2.15
=125 °C - 1.7 -
j
=150 °C - 1.7 -
j
=150 °C, Inductive load
j
(Note3)
4.85 5.00 5.15 kΩ
=493 Ω, TC=100 °C
100
(Note3)
- - 10 mW
(Note3)
-7.3 - +7.8 %
(Note5)
- 3375 - K
Limits
Min. Typ. Max.
- 14.2 - mJ
Limits
Min. Typ. Max.
Unit
V
V
Unit
THERMAL RESISTANCE CHARACTERISTICS
Symbol Item Conditions
R
R
R
Junction to case, IGBT
th(j-c)Q
th(j-c)D
Contact thermal resistance
th(c-s)
Thermal resistance
Junction to case, DIODE
Case to heat sink, per 1 module,
Thermal grease applied
(ote3)
- - 0.10
(Note3)
- - 0.19
(Note3, 6)
Limits
Min. Typ. Max.
- 25 - K/kW
Unit
K/W
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Mt Mounting torque Main terminals M 5 screw 2.5 3.0 3.5 N·m
Ms Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m
ds Creepage distance
da Clearance
Terminal to terminal 20.6 - -
Terminal to base plate 17 - -
Terminal to terminal 12 - -
Terminal to base plate 10.6 - -
m Weight - - 210 - g
ec Flatness of base plate On the centerline X, Y
(Note7)
-100 - +100 μm
Limits
Min. Typ. Max.
Unit
mm
mm
Publication Date : June 2013
3
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