Mitsubishi Electric US, Inc CM1200HCB-34N Data Sheet
CM2400HCB-34N
I
C ··························································
1200 A
V
CES ····················································
1700 V
1-element in pack
Insulated type
CSTBTTM / Soft recovery diode
AlSiC baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
<High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM1200HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Publication Date : December 2015
(HVM-1053-B)
1
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
Limits
Unit
Min
Typ
Max
I
CES
Collector cutoff current
VCE = V
CES
, VGE = 0 V
Tj = 25 °C
— — 5
mA
Tj = 125 °C
—
4.0
10
V
GE(th)
Gate-emitter threshold voltage
VCE = 10 V, IC = 120 mA, Tj = 25 °C
5.5
6.5
7.5
V
I
GES
Gate leakage current
VGE = V
GES
, VCE = 0V, Tj = 25°C
-0.5 — 0.5
µA
C
ies
Input capacitance
VCE = 10 V, VGE = 0 V, f = 100 kHz
Tj = 25 °C
—
220 — nF
C
oes
Output capacitance
—
12 — nF
C
res
Reverse transfer capacitance
—
3.5 — nF
QG
Total gate charge
VCC = 900 V, IC = 1200 A, VGE = ±15 V
—
15.2 — µC
V
CEsat
Collector-emitter saturation voltage
IC = 1200 A
(Note 4)
VGE = 15 V
Tj = 25 °C
—
2.05
2.70
V
Tj = 125 °C
—
2.30
—
t
d(on)
Turn-on delay time
VCC = 900 V, IC = 1200 A
VGE = ±15 V, R
G(on)
= 1.1 Ω
Tj = 125 °C, Ls = 100 nH
Inductive load
— — 1.50
µs
tr
Turn-on rise time
— — 0.60
µs
E
on(10%)
Turn-on switching energy
(Note 5)
—
0.43 — J
t
d(off)
Turn-off delay time
VCC = 900 V, IC = 1200 A
VGE = ±15 V, R
G(off)
= 2.0 Ω
Tj = 125 °C, Ls = 100 nH
Inductive load
— — 3.00
µs
tf
Turn-off fall time
— — 0.60
µs
E
off(10%)
Turn-off switching energy
(Note 5)
—
0.32 — J
VEC Emitter-collector voltage
(Note 2)
IE = 1200 A
(Note 4)
VGE = 0 V
Tj = 25 °C
—
2.20
3.00
V
Tj = 125 °C
—
1.85
—
trr
Reverse recovery time
(Note 2)
VCC = 900 V, IE = 1200 A
VGE = ±15 V, R
G(on)
= 1.1 Ω
Tj = 125 °C, Ls = 100 nH
Inductive load
— — 1.50
µs
Qrr
Reverse recovery charge
(Note 2)
—
410 — µC
E
rec(10%)
Reverse recovery energy
(Note 2)
(Note 5)
—
0.29 — J
THERMAL CHARACTERISTICS
Symbol
Item
Conditions
Limits
Unit
Min
Typ
Max
R
th(j-c)Q
Thermal resistance
Junction to Case, IGBT part
— — 14.0
K/kW
R
th(j-c)D
Junction to Case, FWDi part
— — 21.0
K/kW
R
th(c-s)
Contact thermal resistance
Case to heat sink,
grease
= 1W/m·k, D
(c-s)
= 100m
—
10.0 — K/kW
MAXIMUM RATINGS
Symbol
Item
Conditions
Ratings
Unit
V
CES
Collector-emitter voltage
VGE = 0V, Tj = 25 °C
1700
V
V
GES
Gate-emitter voltage
VCE = 0V, Tj = 25 °C
± 20
V
IC
Collector current
DC, Tc = 80 °C
1200
A
I
CRM
Pulse
(Note 1)
2400
A
IE
Emitter current
(Note 2)
DC
1200
A
I
ERM
Pulse
(Note 1)
2400
A
P
tot
Maximum power dissipation
(Note 3)
Tc = 25 °C, IGBT part
8600
W
V
iso
Isolation voltage
RMS, sinusoidal, f = 60Hz, t = 1min.
4000
V
Tj
Junction temperature
−40 ~ +150
°C
T
jop
Operating temperature
−40 ~ +125
°C
T
stg
Storage temperature
−40 ~ +125
°C
t
pSC
Maximum short circuit pulse width
VCC =1000V, VCE ≤ V
CES
, VGE =15V, Tj =125°C
10
µs
CM1200HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Publication Date : December 2015
2
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
MECHANICAL CHARACTERISTICS
Symbol
Item
Conditions
Limits
Unit
Min
Typ
Max
Mt
Mounting torque
M8 : Main terminals screw
7.0 — 13.0
N·m
Ms
M6 : Mounting screw
3.0 — 6.0
N·m
Mt
M4 : Auxiliary terminals screw
1.0 — 2.0
N·m
m
Mass —
1.5 — kg
CTI
Comparative tracking index
600 — —
—
da
Clearance
19.5 — —
mm
ds
Creepage distance
32.0 — —
mm
L
P CE
Parasitic stray inductance
— 15.0 — nH
R
CC’+EE’
Internal lead resistance
TC = 25 °C
—
0.21 — mΩ
CM1200HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Note1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed T
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. E
on(10%)
/ E
off(10%)
/ E
are the integral of 0.1VCE x 0.1IC x dt.
rec(10%)
rating (150°C).
jmax
jopmax
rating.
Publication Date : December 2015
3
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