CM2400HCB-34N
I
C ··························································
1200 A
V
CES ····················································
1700 V
1-element in pack
Insulated type
CSTBTTM / Soft recovery diode
AlSiC baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
<High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM1200HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Publication Date : December 2015
(HVM-1053-B)
1
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
Limits
Unit
Min
Typ
Max
I
CES
Collector cutoff current
VCE = V
CES
, VGE = 0 V
Tj = 25 °C
— — 5
mA
Tj = 125 °C
—
4.0
10
V
GE(th)
Gate-emitter threshold voltage
VCE = 10 V, IC = 120 mA, Tj = 25 °C
5.5
6.5
7.5
V
I
GES
Gate leakage current
VGE = V
GES
, VCE = 0V, Tj = 25°C
-0.5 — 0.5
µA
C
ies
Input capacitance
VCE = 10 V, VGE = 0 V, f = 100 kHz
Tj = 25 °C
—
220 — nF
C
oes
Output capacitance
—
12 — nF
C
res
Reverse transfer capacitance
—
3.5 — nF
QG
Total gate charge
VCC = 900 V, IC = 1200 A, VGE = ±15 V
—
15.2 — µC
V
CEsat
Collector-emitter saturation voltage
IC = 1200 A
(Note 4)
VGE = 15 V
Tj = 25 °C
—
2.05
2.70
V
Tj = 125 °C
—
2.30
—
t
d(on)
Turn-on delay time
VCC = 900 V, IC = 1200 A
VGE = ±15 V, R
G(on)
= 1.1 Ω
Tj = 125 °C, Ls = 100 nH
Inductive load
— — 1.50
µs
tr
Turn-on rise time
— — 0.60
µs
E
on(10%)
Turn-on switching energy
(Note 5)
—
0.43 — J
t
d(off)
Turn-off delay time
VCC = 900 V, IC = 1200 A
VGE = ±15 V, R
G(off)
= 2.0 Ω
Tj = 125 °C, Ls = 100 nH
Inductive load
— — 3.00
µs
tf
Turn-off fall time
— — 0.60
µs
E
off(10%)
Turn-off switching energy
(Note 5)
—
0.32 — J
VEC Emitter-collector voltage
(Note 2)
IE = 1200 A
(Note 4)
VGE = 0 V
Tj = 25 °C
—
2.20
3.00
V
Tj = 125 °C
—
1.85
—
trr
Reverse recovery time
(Note 2)
VCC = 900 V, IE = 1200 A
VGE = ±15 V, R
G(on)
= 1.1 Ω
Tj = 125 °C, Ls = 100 nH
Inductive load
— — 1.50
µs
Qrr
Reverse recovery charge
(Note 2)
—
410 — µC
E
rec(10%)
Reverse recovery energy
(Note 2)
(Note 5)
—
0.29 — J
THERMAL CHARACTERISTICS
Symbol
Item
Conditions
Limits
Unit
Min
Typ
Max
R
th(j-c)Q
Thermal resistance
Junction to Case, IGBT part
— — 14.0
K/kW
R
th(j-c)D
Junction to Case, FWDi part
— — 21.0
K/kW
R
th(c-s)
Contact thermal resistance
Case to heat sink,
grease
= 1W/m·k, D
(c-s)
= 100m
—
10.0 — K/kW
MAXIMUM RATINGS
Symbol
Item
Conditions
Ratings
Unit
V
CES
Collector-emitter voltage
VGE = 0V, Tj = 25 °C
1700
V
V
GES
Gate-emitter voltage
VCE = 0V, Tj = 25 °C
± 20
V
IC
Collector current
DC, Tc = 80 °C
1200
A
I
CRM
Pulse
(Note 1)
2400
A
IE
Emitter current
(Note 2)
DC
1200
A
I
ERM
Pulse
(Note 1)
2400
A
P
tot
Maximum power dissipation
(Note 3)
Tc = 25 °C, IGBT part
8600
W
V
iso
Isolation voltage
RMS, sinusoidal, f = 60Hz, t = 1min.
4000
V
Tj
Junction temperature
−40 ~ +150
°C
T
jop
Operating temperature
−40 ~ +125
°C
T
stg
Storage temperature
−40 ~ +125
°C
t
pSC
Maximum short circuit pulse width
VCC =1000V, VCE ≤ V
CES
, VGE =15V, Tj =125°C
10
µs
CM1200HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Publication Date : December 2015
2
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
MECHANICAL CHARACTERISTICS
Symbol
Item
Conditions
Limits
Unit
Min
Typ
Max
Mt
Mounting torque
M8 : Main terminals screw
7.0 — 13.0
N·m
Ms
M6 : Mounting screw
3.0 — 6.0
N·m
Mt
M4 : Auxiliary terminals screw
1.0 — 2.0
N·m
m
Mass —
1.5 — kg
CTI
Comparative tracking index
600 — —
—
da
Clearance
19.5 — —
mm
ds
Creepage distance
32.0 — —
mm
L
P CE
Parasitic stray inductance
— 15.0 — nH
R
CC’+EE’
Internal lead resistance
TC = 25 °C
—
0.21 — mΩ
CM1200HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Note1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed T
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. E
on(10%)
/ E
off(10%)
/ E
are the integral of 0.1VCE x 0.1IC x dt.
rec(10%)
rating (150°C).
jmax
jopmax
rating.
Publication Date : December 2015
3
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
0
400
800
1200
1600
2000
2400
0 1 2 3 4 5 6
Collector Current [A]
Collector - Emitter Voltage [V]
VGE = 8V
Tj = 125°C
VGE = 20V
VGE = 15V
VGE = 10V
VGE = 12V
0
400
800
1200
1600
2000
2400
0 2 4 6 8 10 12
Collector Current [A]
Gate - Emitter Voltage [V]
Tj = 25°C
Tj =125°C
VCE = 20V
0
400
800
1200
1600
2000
2400
0 1 2 3 4
Collector Current [A]
Collector-Emitter Saturation Voltage [V]
Tj = 25°C
VGE = 15V
Tj = 125°C
0
400
800
1200
1600
2000
2400
0 1 2 3 4
Emitter Current [A]
Emitter-Collector Voltage [V]
Tj = 125°C
Tj = 25°C
CM1200HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
Publication Date : December 2015
4
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
1
10
100
1000
0.1 1 10 100
Capacitance [nF]
Collector-Emitter Voltage [V]
Cies
VGE = 0V, Tj = 25°C
f = 100kHz
Coes
Cres
-15
-10
-5
0
5
10
15
20
0 5 10 15 20
Gate-Emitter Voltage [V]
Gate Charge [µC]
VCE = 900V, IC = 1200A
Tj = 25°C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0 500 1000 1500 2000 2500
Switching Energies [J/P]
Collector Current [A]
Erec
VCC = 900V, VGE = ±15V
RG(on) = 1.1 Ω, R
G(off)
= 2.0 Ω
Tj = 125°C, Inductive load
Eoff
Eon
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 2 4 6 8 10 12
Switching Energies [J/P]
Gate Resistance [Ω]
Erec
VCC = 900V, IC = 1200A
VGE = ±15V, Tj = 125°C
Inductive load
Eoff
Eon
CM1200HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
Publication Date : December 2015
5
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
exp1
RZ
i
t
n
1i
i)cj(th
)t(
0.01
0.1
1
10
100 1000 10000
Switching Times [µs]
Collector Current [A]
tf
VCC = 900V, VGE = ±15V
R
G(on)
= 1.1 Ω, R
G(off)
= 2.0 Ω
Tj = 125°C, Inductive load
tr
td(on)
td(off)
10
100
1000
10000
0
1
10
100
100 1000 10000
Reverse Recovery Current [A]
Reverse Recovery Time [µs]
Emitter Current [A]
trr
VCC = 900V, VGE = ±15V
R
G(on)
= 1.1 Ω
Tj = 125°C, Inductive load
Irr
0
0.2
0.4
0.6
0.8
1
1.2
0.001 0.01 0.1 1 10
Normalized Transient Thermal impedance
Time [s]
Rth(j-c)Q = 14.0K/kW
Rth(j-c)R = 21.0K/kW
CM1200HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
Publication Date : December 2015
6
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
SHORT CIRCUIT
SAFE OPERATING AREA (SCSOA)
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
0
1000
2000
3000
0 500 1000 1500 2000
Collector Current [A]
Collector-Emitter Voltage [V]
VCC 1200V, VGE = ±15V
Tj = 125°C, RG(off) 2.0 Ω
0
5000
10000
15000
20000
0 500 1000 1500 2000
Collector Current [A]
Collector-Emitter Voltage [V]
VCC 1000V, VGE = ±15V
R
G(on)
1.1Ω, R
G(off)
2.0Ω
Tj = 125°C, tpsc 10µs
0
200
400
600
800
1000
1200
1400
1600
0 500 1000 1500 2000
Reverse Recovery Current [A]
Collector-Emitter Voltage [V]
VCC 1200V, di/dt 6500A/µs
Tj = 125°C
CM1200HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
Publication Date : December 2015
7
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
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CM1200HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Publication Date : December 2015
8
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