Mitsubishi Electric US, Inc CM100RX-24S1 Data Sheet
<IGBT Modules>
CM100RX-24S1
INSULATED TYPE
Publication Date : September 2017
CMH-10249-B
Ver.1.3
sevenpack (3φ Inverter + Brake Chopper)
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
TERMINAL
SECTION A
GWP(12)
W(3)
EWP(11)
NTC
TH1(7)
TH2(8)
GWN(10)
EWN(9)
GVP(16)
V(2)
EVP(15)
GVN(14)
EVN(13)
GUP(20)
U(1)
EUP(19)
GUN(18)
EUN(17)
P(21)
N(22)
B(4)
GB(6)
EB(5)
0.5
to 3
±0.2
HIGH POWER SWITCHING USE
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULA TED TYPE
APPLICATION
AC Motor Control, Motion/Servo Control, etc.
Collector current IC .............…..............................… 1 0 0 A
Collector-emitter voltage V
Maximum junction temperature T
..............................… 1 2 0 0 V
CES
........................ 1 7 5 °C
jmax
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive* compliant
●Recognized under UL1557, File E323585
t=0.8
INTERNAL CONNECTION
Tolerance otherwise specified
Division of Dimension Tolerance
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
1
<IGBT Modules>
CM100RX-24S1
INSULATED TYPE
Publication Date : September 2017
CMH-10249-B
Ver.1.3
Symbol
Item
Conditions
Rating
Unit
V
Collector-emitter voltage
G-E short-circuited
1200
V
V
Gate-emitter voltage
C-E short-circuited
± 20
V IC
DC, TC=107 °C
100
I
Pulse, Repetitive
200
P
Total power dissipation
TC=25 °C
625
W
IE
DC
100
I
Pulse, Repetitive
200
Symbol
Item
Conditions
Rating
Unit
V
Collector-emitter voltage
G-E short-circuited
1200
V V
Gate-emitter voltage
C-E short-circuited
± 20
V IC
DC, TC=113 °C
50
I
Pulse, Repetitive
100
P
Total power dissipation
TC=25 °C
340
W
V
RRM
Repetitive peak reverse voltage
G-E short-circuited
1200
V
IF
DC
50
I
Pulse, Repetitive
(Note3)
100
Symbol
Item
Conditions
Rating
Unit
V
Isolation voltage
Terminals to base plate, RMS, f=6 0 Hz , AC 1 min
4000
V T
Maximum junction temperature
Instantaneous event (overload)
175
T
Maximum case temperature
(Note4)
125
T
jop
Operating junction temperature
Continuous operation (under switching)
-40 ~ +150
T
Storage temperature
-
-40 ~ +125
Limits
Min.
Typ.
Max.
I
Collector-emitter cut-off current
VCE=V
, G-E short-circuited
- - 1.0
mA
I
Gate-emitter leakage current
VGE=V
, C-E short-circuited
- - 0.5
μA
V
GE(th)
Gate-emitter threshold voltage
IC=10 mA, VCE=10 V
5.4
6.0
6.6
V
IC=100 A, VGE=15 V,
Tj=25 °C
-
1.80
2.25
Refer to the figure of test circuit
Tj=125 °C
-
2.00
-
Tj=150 °C
-
2.05
-
IC=100 A,
Tj=25 °C
-
1.70
2.15
VGE=15 V,
Tj=125 °C
-
1.90
-
Tj=150 °C
-
1.95
- C
Input capacitance
- - 10
C
oes
Output capacitance
- - 2.0
C
Reverse transfer capacitance
- - 0.17
QG
Gate charge
VCC=600 V, IC=100 A, VGE=15 V
-
210 - nC t
Turn-on delay time
- - 300
tr
Rise time
- - 200
t
Turn-off delay time
- - 600
tf
Fall time - -
300
HIGH POWER SWITCHING USE
MAXI MUM RATINGS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
CES
GES
(Note1)
(Note1)
Collector current
(Note2)
Emitter current
Collector current
CRM
tot
ERM
BRAKE PART IGBT/DIODE
CES
GES
CRM
tot
(Note2, 4)
(Note2, 4)
(Note2, 4)
(Note3)
(Note3)
(Note2, 4)
(Note3)
A
A
A
(Note2)
FRM
Forward current
MODULE
isol
jmax
Cmax
stg
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol Item Conditions
CES
GES
V
CE sat
(Terminal)
V
CE sat
(Chip)
ies
res
Collector-emitter saturation voltage
CES
GES
(Note5)
(Note5)
VCE=10 V, G-E short-circuited
A
°C
°C
Unit
V
V
nF
d(on)
d(off)
VCC=600 V, IC=100 A, VGE=±15 V,
ns
RG=6.2 Ω, Inductive load
2
<IGBT Modules>
CM100RX-24S1
INSULATED TYPE
Publication Date : September 2017
CMH-10249-B
Ver.1.3
Limits
Min.
Typ.
Max.
IE=100 A, G-E short-circuited,
Tj=25 °C
-
2.60
3.40
Refer to the figure of test circuit
Tj=125 °C
-
2.16
-
Tj=150 °C
-
2.10
-
IE=100 A,
Tj=25 °C
-
2.50
3.30
G-E short-circuited,
Tj=125 °C
-
2.06
-
Tj=150 °C
-
2.00
- trr
Reverse recovery time
VCC=600 V, IE=100 A, VGE=±15 V,
- - 300
ns
Qrr
(Note1)
Reverse recovery charge
RG=6.2 Ω, Inductive load
-
2.7 - μC
Eon
Turn-on s witching energy per pulse
VCC=600 V, IC=IE=100 A,
-
5.9
-
E
off
Turn-off switching energy per pulse
VGE=±15 V, RG=6.2 Ω, Tj=150 °C,
-
9.7
- Err
Reverse recovery energy per pulse
Inductive load
-
9.7 - mJ
Main terminals-chip, per switch,
TC=25 °C
rg
Internal gate resistance
Per switch
- 0 -
Ω
Limits
Min.
Typ.
Max.
I
Collector-emitter cut-off current
VCE=V
, G-E short-circuited
- - 1.0
mA
I
Gate-emitter leakage current
VGE=V
, C-E short-circuited
- - 0.5
μA V
GE(th)
Gate-emitter threshold voltage
IC=5 mA, VCE=10 V
5.4
6.0
6.6
V
IC=50 A, VGE=15 V,
Tj=25 °C
-
1.80
2.25
Refer to the figure of test circuit
Tj=125 °C
-
2.00
-
Tj=150 °C
-
2.05
-
IC=50 A,
Tj=25 °C
-
1.70
2.15
VGE=15 V,
Tj=125 °C
-
1.90
-
Tj=150 °C
-
1.95
-
C
Input capacitance
- - 5.0
C
oes
Output capacitance
- - 1.0
C
Reverse transfer capacitance
- - 0.08
QG
Gate charge
VCC=600 V, IC=50 A, VGE=15 V
-
105 - nC
t
Turn-on delay time
- - 300
tr
Rise time
- - 200
t
Turn-off delay time
- - 600
tf
Fall time - -
300
I
Repetitive peak reverse current
VR=V
, G-E short-circuited
- - 1.0
mA
IE=50 A, G-E short-circuited,
Tj=25 °C
-
2.60
3.40
Refer to the figure of test circuit
Tj=125 °C
-
2.16
-
Tj=150 °C
-
2.10
-
IE=50 A,
Tj=25 °C
-
2.50
3.30
G-E short-circuited,
Tj=125 °C
-
2.06
-
Tj=150 °C
-
2.00
- trr
Reverse recovery time
VCC=600 V, IE=50 A, VGE=±15 V,
- - 300
ns
Qrr
Reverse recovery charge
RG=13 Ω, Inductive load
-
1.3 - μC Eon
Turn-on s witching energy per pulse
VCC=600 V, IC=IE=50 A,
-
3.2
-
E
Turn-off switching energy per pulse
VGE=±15 V, RG=13 Ω, Tj=150 °C,
-
5.0
- Err
Reverse recovery energy per pulse
Inductive load
-
4.4 - mJ
rg
Internal gate resistance
- - 0 - Ω
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS (cont.; Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol Item Conditions
(Note1)
VEC
(Terminal)
(Note5)
Emitter-collector voltage
(Note1)
VEC
(Chip)
(Note1)
(Note1)
R
Internal lead resistance
CC'+EE'
(Note5)
(Note4)
BRAKE PART IGBT/DIODE
Symbol Item Conditions
CES
GES
V
CE sat
(Terminal)
V
CE sat
(Chip)
ies
res
Collector-emitter saturation voltage
CES
GES
(Note5)
(Note5)
VCE=10 V, G-E short-circuited
Unit
V
V
mJ
- - 0.8 mΩ
Unit
V
V
nF
d(on)
d(off)
RRM
V
F
(Terminal)
VCC=600 V, IC=50 A, VGE=±15 V,
ns
RG=13 Ω, Inductive load
RRM
V
(Note5)
Forward voltage
V
F
(Chip)
off
(Note5)
V
mJ
3
<IGBT Modules>
CM100RX-24S1
INSULATED TYPE
Publication Date : September 2017
CMH-10249-B
Ver.1.3
Limits
Min.
Typ.
Max.
R25
Zero-power resistance
TC=25 °C
4.85
5.00
5.15
kΩ ΔR/R
Deviation of resistance
R
=493 Ω, TC=100 °C
-7.3 - +7.8
% B
B-constant
Approximate by equation
-
3375 - K
P25
Power dissipation
TC=25 °C
- - 10
mW
Limits
Min.
Typ.
Max.
R
th(j- c)Q
Junction to case, per Inverter IGBT
- - 0.24
R
Junction to case, per Inverter DIODE
- - 0.37
R
Junction to case, per Brake IGBT
- - 0.44
R
th(j- c)D
Junction to case, per Brake DIODE
- - 0.66
Case to heat sink, per 1 module,
Thermal grease applied
(Note4, 7)
Limits
Min.
Typ.
Max.
Mt
Mounting torque
Main terminals
M 5 screw
2.5
3.0
3.5
N·m
Ms
Mounting torque
Mounting to heat sink
M 5 screw
2.5
3.0
3.5
N·m
Terminal to terminal
17 - -
Terminal to base plate
20.1 - -
Terminal to terminal
10 - -
Terminal to base plate
14.8 - -
m
mass - -
370 - g
ec
Flatness of base plate
On the centerline X, Y
±0 - +100
μm
)
TT
/()
R
R
ln(B
)/(
502550
25
5025
11
−=
Y
X
+:Convex
-:Concave
+:Convex
-:Concave
mounting side
mounting side
mounting side
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS (cont.; Tj=25 °C, unless otherwise specified)
NTC THERMISTOR P ART
Symbol Item Conditions
(Note4)
100
(25/50)
(Note4)
THERMAL RESISTANCE CHARACTERISTICS
Symbol Item Conditions
th(j- c)D
th(j- c)Q
R
th(c- s )
Thermal resistance
Contact thermal resistance
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
ds Creepage distance
da Clearance
(Note4)
(Note6)
(Note4)
(Note4)
(Note4)
(Note4)
Unit
Unit
K/W
K/W
- 15 - K/kW
Unit
mm
mm
(Note8)
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).
2. Junction temperature (T
) should not increase beyond T
j
3. Pulse width and repetition rate should be such that the device junction temperature (T
4. Case temperature (T
) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate and heat sink
C
jmax
rating.
) dose not exceed T
j
jmax
rating.
just under the chips. Refer to the figure of chip location.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise.
6.
: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]
R
25
: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]
R
50
,
7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
4
<IGBT Modules>
CM100RX-24S1
INSULATED TYPE
Publication Date : September 2017
CMH-10249-B
Ver.1.3
9.
Use the following screws when mounting the printed circuit board (PCB) on the standoffs.
PT
Limits
Min.
Typ.
Max.
VCC
(DC) Supply voltage
Applied across P-N terminals
-
600
850
V
Applied across GB-EB/
G*P-E*P/G*N-E*N(*=U, V, W) terminals
Inverter IGBT
6.2 - 62
Brake IGBT
13 - 130
HIGH POWER SWITCHING USE
PCB thickness : t=1.6.
Type Size Tightening torque Recommended tightening method
(1)
(2)
(3)
(4)
(5) B1 tapping screw φ2.6×10 or φ2.6×12
PT
DELTA PT
DELTA PT
K25×8
K25×10
25×8
25×10
* This product is compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment (RoHS).
RECOMMENDED OPERATING CONDITIONS
Symbol Item Conditions
V
Gate (-emitter drive) voltage
GEon
RG External gate resistance Per switch
0.55 ± 0.055 N・m
0.75 ± 0.075 N・m
0.55 ± 0.055 N・m
0.75 ± 0.075 N・m
0.75 ± 0.075 N・m
by handwork (equivalent to 30 rpm
by mechanical screw driver)
~ 600 rpm (by mechanical screw driver)
Unit
13.5 15.0 16.5 V
Ω
5
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