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Mitsubishi Electric US, Inc
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CM100RX-24S
Data Sheet
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Mitsubishi Electric US, Inc CM100RX-24S Data Sheet

< IGBT MODULES >
CM100RX-24S
HIGH POWER SWITCHING USE
I
sevenpack (3φ Inverter+Chopper Brake)
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.

OUTLINE DRAWING & INTERNAL CONNECTION

Collector current I Collector-emitter voltage V Maximum junction temperature T
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliant
●Recognized under UL1557, File E323585
.............….......................… 100A
C
......................… 1200V
CES
.............. 175°C
jmax
Dimension in mm
TERMINAL
P(35)
GUP(34) EUP(33)
U(1)
INTERNAL CONNECTION
GVP(26) EVP(25)
GWP(18) EWP(17)
V(2)
W(3)
NTC
W(4)
TH1(10) TH2(11)
t=0.8
SECTION A
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2
The tolerance of size between terminals is assumed to be ±0.4.
GU N(30 ) EUN(29)
N(3 6)
Publication Date : August 2013
G VP(22) EVP(21)
GWN (14) EWN(13)
GB(6) EB(5)
1
< IGBT MODULES >
CM100RX-24S
HIGH POWER SWITCHING USE INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (T

INVERTER PART IGBT/DIODE

Symbol Item Conditions Rating Unit
V
Collector-emitter voltage G-E short-circuited 1200 V
CES
V
Gate-emitter voltage C-E short-circuited ± 20 V
GES
IC DC, TC=119 °C I
CRM
P
Total power dissipation TC=25 °C
tot
(Note1)
IE I
ERM

BRAKE PART IGBT/DIODE

V
CES
V
GES
IC DC, TC=125 °C I
CRM
P
tot
V
RRM
IF I
FRM
MODULE
V
isol
T
jmax
T
Cmax
T
jop
T
stg
(Note1)
Symbol Item Conditions Rating Unit
Collector-emitter voltage G-E short-circuited 1200 V Gate-emitter voltage C-E short-circuited ± 20 V
Total power dissipation TC=25 °C
Repetitive peak reverse voltage G-E short-circuited 1200 V
Symbol Item Conditions Rating Unit
Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V
Maximum junction temperature Instantaneous event (overload) 175 °C
Maximum case temperature Operating junction temperature Continuous operation (under switching) -40 ~ +150 Storage temperature - -40 ~ +125
Collector current
Emitter current
Collector current
Forward current
=25 °C, unless otherwise specified)
j
(Note2, 4)
Pulse, Repetitive
(Note2)
100
Pulse, Repetitive
Pulse, Repetitive
(Note2)
50
Pulse, Repetitive
(Note4)
125 °C
(Note3)
(Note2, 4)
750 W
(Note3)
(Note2, 4)
(Note3)
(Note2, 4)
425 W
(Note3)
100 200
200
50 100
100
A
A
A
A
°C
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)

INVERTER PART IGBT/DIODE

Symbol Item Conditions
I
Collector-emitter cut-off current VCE=V
CES
I
Gate-emitter leakage current VGE=V
GES
V
Gate-emitter threshold voltage IC=10 mA, VCE=10 V 5.4 6.0 6.6 V
GE(th)
IC=100 A
, G-E short-circuited - - 1.0 mA
CES
, C-E short-circuited - - 0.5 μA
GES
(Note5)
, Tj=25 °C - 1.80 2.25
VGE=15 V, Tj=125 °C - 2.00 -
V
CEsat
Collector-emitter saturation voltage
(Terminal) Tj=150 °C - 2.05 ­IC=100 A
(Note5)
, Tj=25 °C - 1.70 2.15 VGE=15 V, Tj=125 °C - 1.90 ­(Chip) T
C
Input capacitance - - 10
ies
V
C
Output capacitance - - 2.0
oes
C
Reverse transfer capacitance
res
=10 V, G-E short-circuited
CE
=150 °C - 1.95 -
j
QG Gate charge VCC=600 V, IC=100 A, VGE=15 V - 233 - nC t
Turn-on delay time - - 300
d(on)
tr Rise time t
Turn-off delay time - - 600
d(off)
tf Fall time
V
=600 V, IC=100 A, VGE=±15 V,
CC
R
=6.2 Ω, Inductive load
G
Limits
Min. Typ. Max.
- - 0.17
- - 200
- - 300
Unit
V
V
nF
ns
Publication Date : August 2013
2
< IGBT MODULES >
CM100RX-24S
HIGH POWER SWITCHING USE INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont; T

INVERTER PART IGBT/DIODE

Symbol Item Conditions
(Note1)
VEC
(Note1)
t
Reverse recovery time VCC=600 V, IE=100 A, VGE=±15 V, - - 300 ns
rr
(Note1)
Qrr Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=100 A, - 8.6 ­E Err
R rg Internal gate resistance Per switch - 0 - Ω

BRAKE PART IGBT/DIODE

I I V
V
C C C QG Gate charge VCC=600 V, IC=50 A, VGE=15 V - 117 - nC t tr Rise time t tf Fall time
I
RRM
V
trr Reverse recovery time VCC=600 V, IE=50 A, VGE=±15 V, - - 300 ns Qrr Reverse recovery charge RG=13 Ω, Inductive load - 2.7 - μC Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=50 A, - 5.5 ­E Err Reverse recovery energy per pulse Inductive load - 4.5 - mJ rg Internal gate resistance - - 0 - Ω
Reverse recovery charge RG=6.2 Ω, Inductive load - 5.3 - μC
Turn-off switching energy per pulse VGE=±15 V, RG=6.2 Ω, Tj=150 °C, - 10.7 -
off
(Note1)
Reverse recovery energy per pulse Inductive load - 10.2 - mJ
Internal lead resistance
CC'+EE'
Symbol Item Conditions
Collector-emitter cut-off current VCE=V
CES
Gate-emitter leakage current VGE=V
GES
Gate-emitter threshold voltage IC=5 mA, VCE=10 V 5.4 6.0 6.6 V
GE(th)
CEsat
Input capacitance - - 5.0
ies
Output capacitance - - 1.0
oes
Reverse transfer capacitance
res
Turn-on delay time - - 300
d(on)
Turn-off delay time - - 600
d(off)
Repetitive peak reverse current VR=V
F
Turn-off switching energy per pulse VGE=±15 V, RG=13 Ω, Tj=150 °C, - 5.3 -
off
Emitter-collector voltage
Collector-emitter saturation voltage
Forward voltage
=25 °C, unless otherwise specified)
j
IE=100 A
(Note5)
, Tj=25 °C - 1.80 2.25 G-E short-circuited, Tj=125 °C - 1.80 ­(Terminal) Tj=150 °C - 1.80 ­IE=100 A
(Note5)
, Tj=25 °C - 1.70 2.15 G-E short-circuited, Tj=125 °C - 1.70 ­(Chip) T
Main terminals-chip, per switch, T
=25 °C
C
IC=50 A
(Note4)
, G-E short-circuited - - 1.0 mA
CES
, C-E short-circuited - - 0.5 μA
GES
(Note5)
, Tj=25 °C - 1.80 2.25 VGE=15 V, Tj=125 °C - 2.00 ­(Terminal) Tj=150 °C - 2.05 ­IC=50 A
(Note5)
, Tj=25 °C - 1.70 2.15 VGE=15 V, Tj=125 °C - 1.90 ­(Chip) T
V
=10 V, G-E short-circuited
CE
V
=600 V, IC=50 A, VGE=±15 V,
CC
R
=13 Ω, Inductive load
G
, G-E short-circuited - - 1.0 mA
RRM
IE=50 A
(Note5)
, Tj=25 °C - 1.80 2.25 G-E short-circuited, Tj=125 °C - 1.80 ­(Terminal) Tj=150 °C - 1.80 ­IE=50 A
(Note5)
, Tj=25 °C - 1.70 2.15 G-E short-circuited, Tj=125 °C - 1.70 ­(Chip) T
Limits
Min. Typ. Max.
=150 °C - 1.70 -
j
- - 3.5 mΩ
Limits
Min. Typ. Max.
=150 °C - 1.95 -
j
- - 0.08
- - 200
- - 300
=150 °C - 1.70 -
j
Unit
V
V
mJ
Unit
V
V
nF
ns
V
V
mJ
Publication Date : August 2013
3
< IGBT MODULES >
CM100RX-24S
HIGH POWER SWITCHING USE INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont; T
NTC THERMISTOR PART
Symbol Item Conditions
R25 Zero-power resistance TC=25 °C ∆R/R Deviation of resistance R B
B-constant Approximate by equation
(25/50)
P25 Power dissipation TC=25 °C
THERMAL RESISTANCE CHARACTERISTICS
Symbol Item Conditions
R R R R
R
Junction to case, per Inverter IGBT - - 0.20
th(j-c)Q
Junction to case, per Inverter DIODE - - 0.29
th(j-c)D
Junction to case, per Brake IGBT - - 0.35
th(j-c)Q
th(j-c)D
Contact thermal resistance
th(c-s)
Thermal resistance
(Note4)
=25 °C, unless otherwise specified)
j
(Note4)
4.85 5.00 5.15 kΩ
=493 Ω, TC=100 °C
100
(Note4)
- - 10 mW
(Note4)
-7.3 - +7.8 %
(Note7)
- 3375 - K
Junction to case, per Brake DIODE - - 0.63
(Note4)
Case to heat sink, per 1 module,
(Note7)
Thermal grease applied
Limits
Min. Typ. Max.
Limits
Min. Typ. Max.
- 15 - K/kW
Unit
Unit
K/W
K/W
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Mt Mounting torque Main terminals M 5 screw 2.5 3.0 3.5 N·m Ms Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m
ds Creepage distance
da Clearance
Terminal to terminal 10.25 - ­Terminal to base plate 12.32 - ­Terminal to terminal 10.28 - ­Terminal to base plate 10.85 - -
m mass - - 370 - g ec Flatness of base plate On the centerline X, Y
(Note8)
±0 - +100 μm
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).
2. Junction temperature (T
3. Pulse width and repetition rate should be such that the device junction temperature (T
4. Case temperature (T
) should not increase beyond T
j
) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate and heat sink
C
jmax
rating.
) dose not exceed T
j
just under the chips. Refer to the figure of chip location.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit.
R
6.
5025
: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]
R
25
: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]
R
50
25
ln(B
)/(
/()
R
11
,
)
TT
502550
7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
Limits
Min. Typ. Max.
rating.
jmax
Unit
mm
mm
Y
mounting side
-:Concave
+:Convex
mounting side
+:Convex
mounting side
-:Concave X
9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs. "φ2.6×10 or φ2.6×12 self tapping screw" The length of the screw depends on the thickness (t1.6~t2.0) of the PCB.
Publication Date : August 2013
4
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