Mitsubishi Electric US, Inc CM100DY-24NF Data Sheet

CM100DY-24NF

MITSUBISHI IGBT MODULES

CM100DY-24NF

HIGH POWER SWITCHING USE

¡IC ...................................................................100A

CES ......................................................... 1200V

¡V
¡Insulated Type
¡2-elements in a pack

APPLICATION

General purpose inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM

Tc measured point (Base plate)

94

17

232317

C1

0.25

2-φ6.5 MOUNTING HOLES

C2E1

13

48

12 12 12

E2

80±

E2 G2

E1G1

4184

3-M5 NUTS

Dimensions in mm

20

(14)

4

+1.0

29

–0.5

16 7 16 7 16

LABEL

TAB #110. t=0.5

E2 G2G1 E1

C2E1

21.2 7.5

E2

CIRCUIT DIAGRAM

C1

Feb. 2009

1

MITSUBISHI IGBT MODULES

CM100DY-24NF

HIGH POWER SWITCHING USE

MAXIMUM RATINGS

Symbol Parameter

CES

V
VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Junction temperature
Storage temperature
Isolation voltage

—

Torque strength

—
—

Weight

ELECTRICAL CHARACTERISTICS

Symbol

ICES

V

GE(th)

IGES

VCE(sat)

Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q
R

th(j-c)R

R

th(c-f)

Rth(j-c’)Q
R

G

1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING.

*

2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].

*

3 : Case temperature (Tc’) measured point is just under the chips.

*

Note 1. I

Collector cutoff current

Gate-emitter threshold voltage

Gate leakage current

Collector-emitter saturation voltage

Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time

Note 1

)

Reverse recovery charge

Note 1

)

Emitter-collector voltage

Note 1

)

Thermal resistance

Contact thermal resistance

Thermal resistance

External gate resistance

If you use this value, R

E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temperature (T

3. Junction temperature (T

(Tj = 25°C, unless otherwise specified)

G-E Short
C-E Short
DC, T

C’ = 113°C

Pulse (Note 2)

Pulse (Note 2)

C = 25°C

T

Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value

(Tj = 25°C, unless otherwise specified)

Parameter

CE = VCES, VGE = 0V

V

IC = 10mA, VCE = 10V

GE = VGES, VCE = 0V

±V

C = 100A, VGE = 15V

I

CE = 10V

V
V

GE = 0V

CC = 600V, IC = 100A, VGE = 15V

V

CC = 600V, IC = 100A

V
V

GE = ±15V

R

G = 3.1Ω, Inductive load

I

E = 100A

I

E = 100A, VGE = 0V

*1

IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound Applied*2 (1/2 module)
Case temperature measured point is just under the chips

th(f-a) should be measured just under the chips.

j) should not increase beyond 150°C.

Conditions UnitRatings

*3

Test conditions

–40 ~ +150
–40 ~ +125

Min. Max.

—

68

—

T

j = 25°C

T

j = 125°C

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

3.1

j) does not exceed Tjmax rating.

1200

±20
100
200
100
200
650

V
V
A
A
A
A

W

°C
°C

2500

2.5 ~ 3.5

3.5 ~ 4.5
310

Limits

Typ.

—

Vrms
N • m
N • m

g

Unit

1

mA

7V

—

1.8

2.0
—
—
—

675

—
—
—
—
—

5.0
—
—
—

0.07
—
—

0.5

2.5
—
23

0.45
—

120

80

450
350
150

—

3.2

0.19

0.35

—

0.13
31

µA

V

nF

2

nF
nF
nC

ns
ns
ns
ns
ns

µC

V
K/W
K/W
K/W

*3

K/W

Ω

Feb. 2009

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