Mitsubishi Electric US, Inc CM100DY-24A Data Sheet

CM100DY-24A

MITSUBISHI IGBT MODULES

CM100DY-24A

HIGH POWER SWITCHING USE

¡IC ...................................................................100A

CES ......................................................... 1200V

¡V ¡Insulated Type ¡2-elements in a pack

APPLICATION

AC drive inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

94

17

232317

2-φ6.5 MOUNTING HOLES

C2E1

13

48

12 12 12

E2

80

±0.25

C1

E2 G2

E1G1

4184

3-M5 NUTS

20

(14)

12.5

(SCREWING DEPTH)

4

+1.0

29

–0.5

16 7 16 7 16

LABEL

TAB #110. t=0.5

E2 G2G1 E1

C2E1

21.2 7.5

E2

CIRCUIT DIAGRAM

C1

Feb. 2009

1

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)

Symbol Parameter

CES

V VGES IC ICM IE ( IEM ( PC ( Tj Tstg Viso

Collector-emitter voltage Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Junction temperature Storage temperature Isolation voltage

—

Torque strength

— —

Weight

G-E Short C-E Short DC, T

C = 84°C

Pulse (Note 2)

*1

C = 25°C

T

Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value

Conditions UnitRatings

*1

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol

ICES

V

GE(th)

IGES

VCE(sat)

Cies Coes Cres QG td(on) tr td(off) tf trr ( Qrr ( VEC( Rth(j-c)Q R

th(j-c)R

R

th(c-f)

RG

1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips.

*

2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].

*

Note 1. I

Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time

Note 1

)

Reverse recovery charge

Note 1

)

Emitter-collector voltage

Note 1

)

Thermal resistance

Contact thermal resistance

External gate resistance

E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temperature (T

3. Junction temperature (T

Parameter

CE = VCES, VGE = 0V

V

I

C = 10mA, VCE = 10V

±V

C = 100A, VGE = 15V

I

CE = 10V

V V

GE = 0V

CC = 600V, IC = 100A, VGE = 15V

V

CC = 600V, IC = 100A

V

GE = ±15V

R

G = 3.1Ω, Inductive load

I

E = 100A

I

E = 100A, VGE = 0V

IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied (1/2 module)

j) should not increase beyond 150°C.

GE = VGES, VCE = 0V

Test conditions

*1

MITSUBISHI IGBT MODULES

CM100DY-24A

HIGH POWER SWITCHING USE

Min. Max.

—

68

—

*1,*2

— — — — — — — — — — — — — — — —

3.1

T

j = 25°C

T

j = 125°C

j) does not exceed Tjmax rating.

1200

±20 100 200 100 200

672 –40 ~ +150 –40 ~ +125

2500

2.5 ~ 3.5

3.5 ~ 4.5 310

Limits

Typ.

—

1

V V

A

W

°C °C

Vrms

N • m

g

Unit

mA

7V

—

2.1

2.4 — — —

500

— — — — —

5.0 — — —

0.022 —

0.5

3.0

17.5

1.5

0.34

100

400 350 150

3.8

0.186

0.34

—

70

—

— 42

µA

V

nF

nC

ns

µC

V

K/W

Ω

Feb. 2009

2

PERFORMANCE CURVES

OUTPUT CHARACTERISTICS

200

V

GE

(A)

C

150

20V

=

(TYPICAL)

15

13

Tj = 25°C

12

MITSUBISHI IGBT MODULES

CM100DY-24A

HIGH POWER SWITCHING USE

COLLECTOR-EMITTER SATURATION

(V)

CE (sat)

VOLTAGE CHARACTERISTICS

4

V

GE

3

(TYPICAL)

= 15V

100

50

COLLECTOR CURRENT I

0

2

0 46810

COLLECTOR-EMITTER VOLTAGE V

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

10

(V)

8

CE (sat)

6

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE V

0

Tj = 25°C

IC = 200A

IC = 100A

IC = 40A

11

10

CE

2

1

COLLECTOR-EMITTER

Tj = 25°C T

j

9

(V)

SATURATION VOLTAGE V

0

050 150100 200

COLLECTOR CURRENT IC (A)

= 125°C

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

3

10

7

5

(A)

E

3

2

10

7

5

3

EMITTER CURRENT I

2

1

2012 146810 16 18

10

012 435

Tj = 25°C T

j

= 125°C

GATE-EMITTER VOLTAGE V

CAPACITANCE–V CHARACTERISTICS

2

10

7 5

(nF)

3 2

res

1

10

, C

7 5

oes

3

, C

2

ies

0

10

7 5

3 2

–1

10

7 5

3 2

CAPACITANCE C

10

V

GE

–2

–1

10

2

(TYPICAL)

= 0V

0

10

357 2

COLLECTOR-EMITTER VOLTAGE V

10

CE

1

GE

C

ies

C

oes

C

res

357

(V)

CE

10

(V)

EMITTER-COLLECTOR VOLTAGE V

EC

(V)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

7 5

3 2

2

10

7 5

3 2

1

10

7 5

SWITCHING TIME (ns)

3 2

0

2

10

1

(TYPICAL)

t

f

t

d(off)

t

d(on)

t

r

2

10

57

Conditions: V

CC

= 600V

V

GE

= ±15V

R

G

= 3.1Ω

T

j

= 125°C

Inductive load

23 5723

10

3

COLLECTOR CURRENT IC (A)

Feb. 2009

3

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

3

10

(A)

rr

7

(ns)

rr

5

3

2

10

7

5

3

2

REVERSE RECOVERY TIME t

1

10

REVERSE RECOVERY CURRENT l

1

10

(TYPICAL)

23 57

10

I

rr

t

rr

2

Conditions: V V R T Inductive load

23 57

EMITTER CURRENT I

CC

= 600V

GE

= ±15V

G

= 3.1Ω

j

= 25°C

E

(A)

10

MITSUBISHI IGBT MODULES

CM100DY-24A

HIGH POWER SWITCHING USE

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT part & FWDi part)

10

1

–1

7 5

3 2

–2

7 5

3 2

–3

10

0

10

7 5

(ratio)

3 2

th (j–c’)

–1

10

7 5

3 2

IGBT part:

–2

10

Per unit base =

7

R

5

NORMALIZED TRANSIENT

3

FWDi part:

3

Per unit base =

2

R

THERMAL IMPEDANCE Z

–3

10

–2

23 57 23 57 23 57 23 57

10

th(j– c)

= 0.186K/W

th(j– c)

= 0.34K/W

10

–1

–5

0

10

Single Pulse T

C

= 25°C

Under the chip

–4

23 57 23 57

10

TIME (s)

SWITCHING LOSS vs.

COLLECTOR CURRENT

(TYPICAL)

2

10

Conditions:

7

V

CC

= 600V

5

V

GE

= ±15V

R

G

= 3.1Ω

3

T

j

= 125°C

2

Inductive load C snubber at bus

1

10

7

5

3

2

SWITCHING LOSS (mJ/pulse)

0

10

1

10

57

Esw(off)

Esw(on)

2

10

COLLECTOR CURRENT I

RECOVERY LOSS vs. I

(TYPICAL)

2

10

Conditions:

7

V

CC

= 600V

5

V

GE

= ±15V

R

G

= 3.1Ω

3

T

j

= 125°C

2

Inductive load C snubber at bus

1

10

7

5

3

2

RECOVERY LOSS (mJ/pulse)

0

10

1

10

57

10

Err

2

SWITCHING LOSS vs.

GATE RESISTANCE

(TYPICAL)

2

10

Conditions:

7

V

CC

= 600V

5

V

GE

= ±15V

I

C

= 100A

3

T

j

= 125°C

2

Inductive load C snubber at bus

3

23 5723

10

C

(A)

1

10

7

5

3

2

SWITCHING LOSS (mJ/pulse)

0

10

0

57

10

1

GATE RESISTANCE R

23 5723

Esw(on)

Esw(off)

G

(Ω)

10

2

RECOVERY LOSS vs.

E

2

10

7

5

3

2

3

23 5723

10

1

10

7

5

3

2

RECOVERY LOSS (mJ/pulse)

0

10

GATE RESISTANCE

Err

0

(TYPICAL)

1

10

57

Conditions: V

CC

= 600V

V

GE

= ±15V

I

E

= 100A

T

j

= 125°C Inductive load C snubber at bus

23 5723

10

2

EMITTER CURRENT I

E

(A)

GATE RESISTANCE R

G

(Ω)

Feb. 2009

4

GATE CHARGE

CHARACTERISTICS

20

IC = 100A

16

12

8

4

GATE-EMITTER VOLTAGE VGE (V)

0

0 400200 800600

(TYPICAL)

VCC = 400V

GATE CHARGE QG (nC)

MITSUBISHI IGBT MODULES

CM100DY-24A

HIGH POWER SWITCHING USE

VCC = 600V

Feb. 2009

5

Mitsubishi Electric US, Inc CM100DY-24A Data Sheet

Specifications and Main Features

Frequently Asked Questions

User Manual