Mitsubishi Electric US, Inc CM100DY-24A Data Sheet

CM100DY-24A

MITSUBISHI IGBT MODULES

CM100DY-24A

HIGH POWER SWITCHING USE

¡IC ...................................................................100A

CES ......................................................... 1200V

¡V
¡Insulated Type
¡2-elements in a pack

APPLICATION

AC drive inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

94

17

232317

2-φ6.5 MOUNTING HOLES

C2E1

13

48

12 12 12

E2

80

±0.25

C1

E2 G2

E1G1

4184

3-M5 NUTS

20

(14)

12.5

(SCREWING DEPTH)

4

+1.0

29

–0.5

16 7 16 7 16

LABEL

TAB #110. t=0.5

E2 G2G1 E1

C2E1

21.2 7.5

E2

CIRCUIT DIAGRAM

C1

Feb. 2009

1

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)

Symbol Parameter

CES

V
VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Junction temperature
Storage temperature
Isolation voltage

—

Torque strength

—
—

Weight

G-E Short
C-E Short
DC, T

C = 84°C

Pulse (Note 2)

Pulse (Note 2)

*1

C = 25°C

T

Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value

Conditions UnitRatings

*1

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol

ICES

V

GE(th)

IGES

VCE(sat)

Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q
R

th(j-c)R

R

th(c-f)

RG

1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips.

*

2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].

*

Note 1. I

Collector cutoff current
Gate-emitter threshold
voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time

Note 1

)

Reverse recovery charge

Note 1

)

Emitter-collector voltage

Note 1

)

Thermal resistance

Contact thermal resistance

External gate resistance

E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temperature (T

3. Junction temperature (T

Parameter

CE = VCES, VGE = 0V

V

I

C = 10mA, VCE = 10V

±V

C = 100A, VGE = 15V

I

CE = 10V

V
V

GE = 0V

CC = 600V, IC = 100A, VGE = 15V

V

V

CC = 600V, IC = 100A

V

GE = ±15V

R

G = 3.1Ω, Inductive load

I

E = 100A

I

E = 100A, VGE = 0V

IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound Applied (1/2 module)

j) should not increase beyond 150°C.

GE = VGES, VCE = 0V

Test conditions

*1

*1

MITSUBISHI IGBT MODULES

CM100DY-24A

HIGH POWER SWITCHING USE

Min. Max.

—

68

—

*1,*2

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

3.1

T

j = 25°C

T

j = 125°C

j) does not exceed Tjmax rating.

1200

±20
100
200
100
200

672
–40 ~ +150
–40 ~ +125

2500

2.5 ~ 3.5

3.5 ~ 4.5
310

Limits

Typ.

—

1

V
V

A

A

W

°C
°C

Vrms

N • m

g

Unit

mA

7V

—

2.1

2.4
—
—
—

500

—
—
—
—
—

5.0
—
—
—

0.022
—

0.5

3.0

17.5

1.5

0.34

100

400
350
150

3.8

0.186

0.34

—

—

70

—

—
42

µA

V

nF

nC

ns

ns

µC

V

K/W

Ω

Feb. 2009

2