Mitsubishi Electric US, Inc CM100DY-13T Data Sheet
<IGBT Modules>
Publication Date : 2018 February
1
CMH-11274-A
Ver. 1.1
Collector current IC .............…..................…
1 0
0
A
Collector-emitter voltage V
CES
..................
6 5
0
V Maximum junction temperature T
vjmax
.........
1 7
5
°C ●dual switch (half-bridge)
●Copper base plate (Nickel-plating)
●Nickel-plating tab terminals
●RoHS Directive compliant
dual switch (half-bridge)
●UL Recognized under UL1557, File No. E323585
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OPTION (Below options are available.)
●PC-TIM (Phase Change Thermal Interface Material) pre-apply
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
INTERNAL CONNECTION
Tolerance otherwise specified
E2
G1
E2
(Es2)
G2
Di1
Di2
C1
C2E1
E1
(Es
1)
Tr2
Tr1
Division of Dimension
Tolerance
0.5
to 3
±0.2 over 3
to 6
±0.3
over 6
to 30
±0.5
over 30
to 120
±0.8 over 120
to 400
±1.2
JIS B 0405 c
CM100DY-13T
HIGH POWER SWITCHING USE
INSULATED TYPE
<IGBT Modules>
CM100DY-13T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date: 2018 February
2
CMH-11274-A
Ver. 1.1
Symbol
Item
Conditions
Rating
Unit
V
CES
Collector-emitter voltage
G-E short-circuited
650
V V
GES
Gate-emitter voltage
C-E short-circuited
± 20
V
IC
Collector current
DC, TC=125 °C
(Note2, 4)
100
A
I
CRM
Pulse, Repetitive
(Note3)
200
P
tot
Total power dissipation
TC=25 °C
(Note2, 4)
775
W IE
(Note1)
Emitter current
DC
(Note2)
100
A
I
ERM
(Note1)
Pulse, Repetitive
(Note3)
200
V
iso l
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
4000
V
T
vjmax
Maximum junction temperature
Instantaneous event (overload)
175
°C
T
Cm a x
Maximum case temperature
(Note4)
125
T
vjop
Operating junction temperature
Continuous operation (under switching)
-40 ~ +150
°C
T
st g
Storage temperature
-
-40 ~ +125
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
I
CE S
Collector-emitter cut-off current
VCE=V
CES
, G-E short-circuited
- - 1.0
mA
I
GE S
Gate-emitter leakage current
VGE=V
GES
, C-E short-circuited
- - 0.5
μA
V
GE (th)
Gate-emitter threshold voltage
IC=10 mA, VCE=10 V
5.4
6.0
6.6
V
V
CE sat
(Terminal)
Collector-emitter saturation voltage
IC=100 A, VGE=15 V,
Tvj=25 °C
-
1.35
1.65
Refer to the figure of test circuit
Tvj=125 °C
-
1.45 - V
(Note5)
Tvj=150 °C
-
1.50 -
V
CE sat
(Chip)
IC=100 A,
Tvj=25 °C
-
1.30
1.55
VGE=15 V,
Tvj=125 °C
-
1.35 - V
(Note5)
Tvj=150 °C
-
1.35 - C
ies
Input capacitance
- -
13.4
C
oe s
Output capacitance
VCE=10 V, G-E short-circuited
- - 0.6
nF
C
re s
Reverse transfer capacitance
- -
0.3
QG
Gate charge
VCC=300 V, IC=100 A, VGE=15 V
-
0.41 - μC
t
d(o n )
Turn-on delay time
VCC=300 V, IC=100 A, VGE=±15 V,
- - 200
tr
Rise time
- - 150
ns
t
d(o f f )
Turn-off delay time
RG=6.2 Ω, Inductive load
- - 400
tf
Fall time - -
400
VEC
(Note.1)
(Terminal)
Emitter-collector voltage
IE=100 A, G-E short-circuited,
Tvj=25 °C
-
2.05
2.85
Refer to the figure of test circuit
Tvj=125 °C
-
1.95 - V
(Note5)
Tvj=150 °C
-
1.95 -
VEC
(Note.1)
(Chip)
IE=100 A,
Tvj=25 °C
-
1.90
2.65
G-E short-circuited,
Tvj=125 °C
-
1.80 - V
(Note5)
Tvj=150 °C
-
1.80 -
t
rr
(Note1)
Reverse recovery time
VCC=300 V, IE=100 A, VGE=±15 V,
- - 150
ns Qrr
(Note1)
Reverse recovery charge
RG=6.2 Ω, Inductive load
-
3.5 - μC
Eon
Turn-on switching energy per pulse
VCC=300 V, IC=IE=100 A,
-
1.2
-
mJ
E
off
Turn-off switching energy per pulse
VGE=±15 V, RG=6.2 Ω, Tvj=150 °C,
-
5.1
-
Err
(Note1)
Reverse recovery energy per pulse
Inductive load
-
1.8 - mJ
R
CC'+EE'
Internal lead resistance
Main terminals-chip, per switch, TC=25 °C
(Note4)
-
0.2 - mΩ
rg
Internal gate resistance
Per switch
- 0 -
Ω
MAXIMUM RATINGS (Tvj=25 °C, unless otherwise specified)
ELECTRICAL CHARACTERISTICS (Tvj=25 °C, unless otherwise specified)
<IGBT Modules>
CM100DY-13T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date: 2018 February
3
CMH-11274-A
Ver. 1.1
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
R
th(j -c)Q
Thermal resistance
Junction to case, per Inverter IGBT
(Note4)
- - 193
K/kW
R
th(j -c)D
Junction to case, per Inverter FWD
(Note4)
- - 304
R
th(c-s)
Contact thermal resistance
Case to heat sink,
per 1 module
Thermal grease applied
(Note4, 6)
-
36.6
-
K/kW
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
Mt
Mounting torque
Main terminals
M 5 screw
2.5
3.0
3.5
N·m
Ms
Mounting torque
Mounting to heat sink
M 6 screw
3.5
4.0
4.5
N·m
ds
Creepage distance
Terminal to terminal
18.4 - -
mm
Terminal to base plate
21.1 - -
da
Clearance
Terminal to terminal
9.6 - -
mm
Terminal to base plate
16.7 - -
ec
Flatness of base plate
On the centerline
(Note7)
±0 - +200
μm
m
mass - -
120 - g
*:
This product is compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment (RoHS) directive 2011/65/EU.
Note1.
Represent ratings and characteristics of the anti-parallel, emitter-collector free-wheeling diode (FWD).
2.
Junction temperature (Tvj) should not increase beyond T
vjm a x
rating.
3.
Pulse width and repetition rate should be such that the device junction temperature (Tvj) dose not exceed T
vjm a x
rating.
4.
Case temperature (TC) and heat sink temperature (TS) are defined on the each surface (mounting side) of base plate and heat sink just under the chips.
Refer to the figure of chip location.
5.
Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit.
6.
Typical value is measured by using thermally conductive grease of λ=3.0 W/(m·K)/D
(C-S)
=50 μm.
7.
The base plate (mounting side) flatness measurement point is as follows of the following figure.
X
+: Convex
Mounting side
Mounting
side
5 mm
5 mm
18.3 mm
18.3 mm
THERMAL RESISTANCE CHARACTERISTICS
MECHANICAL CHARACTERISTICS
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