Mitsubishi Electric US, Inc CM1000HA-34S Data Sheet

<IGBT Modules>

Publication Date : September 2016

1

CMH-11148

Ver.1.0

Collector current IC .............…..................…

1 0 0

0

A

Collector-emitter voltage V

CES

..................

1 7 0

0

V

Maximum junction temperature T

vjmax

.........

1 7

5

°C

●Flat base Type

●Copper base plate

●Tin plating tab terminals

●RoHS Directive compliant

single pack

●Recognized under UL1557, File E323585

APPLICATION

OUTLINE DRAWING & INTERNAL CONNECTION

Dimension in mm

TERMINAL

SECTION A

INTERNAL CONNECTION

Terminal code

2

1

4

5 6 9

8

7 3 10

Tr

Di

1: E
2: C
3: CS
4: NC
5: G
6: ES
7: ES
8: G
9: NC

10: CS

Tolerance otherwise specified

Division of Dimension

Tolerance

0.5

to 3

±0.2 over 3

to 6

±0.3 over 6

to 30

±0.5 over 30

to 120

±0.8

over 120

to 400

±1.2

over 400

to 1000

±2.0

over 1000

to 2000

±3.0

over 2000

to 4000

±4.0

CM1000HA-34S

HIGH POWER SWITCHING USE
INSULATED TYPE

AC Motor Control, Motion/Servo Control, Power supply, Photovoltaic power, Wind power, etc.

<IGBT Modules>

CM1000HA-34S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

2

CMH-11148

Ver.1.0

Symbol

Item

Conditions

Rating

Unit

V

CES

Collector-emitter voltage

G-E short-circuited

1700

V V

GES

Gate-emitter voltage

C-E short-circuited

± 20

V IC

Collector current
DC, TC=111 °C

(Note2, 4)

1000

A

I

CRM

Pulse, Repetitive

(Note3)

2000

P

tot

Total power dissipation

TC=25 °C

(Note2, 4)

7140

W IE

(Note1)

Emitter current
DC

(Note2)

1000

A

I

ERM

(Note1)

Pulse, Repetitive

(Note3)

2000

V

is o l

Isolation voltage

Terminals to base plate, RMS, f=60 Hz, AC 1 min

4000

V

T

vjmax

Maximum junction temperature

Instantaneous event (overload)

175

°C

T

Cm a x

Maximum case temperature

(Note4)

125

T

vjop

Operating junction temperature

Continuous operation (under switching)

-40 ~ +150

°C

T

st g

Storage temperature

-

-40 ~ +125

Symbol

Item

Conditions

Limits

Unit

Min.

Typ.

Max.

I

CE S

Collector-emitter cut-off current

VCE=V

CES

, G-E short-circuited

- - 1.0

mA

I

GE S

Gate-emitter leakage current

VGE=V

GES

, C-E short-circuited

- - 0.5

μA V

GE (th)

Gate-emitter threshold voltage

IC=100 mA, VCE=10 V

5.4

6.0

6.6

V

V

CE sat

(Terminal)

Collector-emitter saturation voltage

IC=1000 A, VGE=15 V,

Tvj=25 °C

-

2.10

2.60

Refer to the figure of test circuit

Tvj=125 °C

-

2.35 - V

(Note5)

Tvj=150 °C

-

2.45 -

V

CE sat

(Chip)

IC=1000 A,

Tvj=25 °C

-

2.00

2.50

VGE=15 V,

Tvj=125 °C

-

2.25 - V

(Note5)

Tvj=150 °C

-

2.35 -

C

ies

Input capacitance

- -

230

C

oe s

Output capacitance

VCE=10 V, G-E short-circuited

- - 24

nF

C

re s

Reverse transfer capacitance

- -

4.0

QG

Gate charge

VCC=1000 V, IC=1000 A, VGE=15 V

-

4.2 - μC

t

d( o n)

Turn-on delay time

VCC=1000 V, IC=1000 A, VGE=±15 V,

- - 900

tr

Rise time

- - 300

ns

t

d( o ff )

Turn-off delay time

RG=0 Ω, Inductive load

- - 900

tf

Fall time - -

400

VEC

(Note.1)

(Terminal)

Emitter-collector voltage

IE=1000 A, G-E short-circuited,

Tvj=25 °C

-

2.10

2.60

Refer to the figure of test circuit

Tvj=125 °C

-

2.20 - V

(Note5)

Tvj=150 °C

-

2.15 -

VEC

(Note.1)

(Chip)

IE=1000 A,

Tvj=25 °C

-

2.00

2.50

G-E short-circuited,

Tvj=125 °C

-

2.10 - V

(Note5)

Tvj=150 °C

-

2.05 -

t

rr

(Note1)

Reverse recovery time

VCC=1000 V, IE=1000 A, VGE=±15 V,

- - 500

ns

Qrr

(Note1)

Reverse recovery charge

RG=0 Ω, Inductive load

-

200 - μC

Eon

Turn-on switching energy per pulse

VCC=1000 V, IC=IE=1000 A,

-

589

-

mJ

E

off

Turn-off switching energy per pulse

VGE=±15 V, RG=0 Ω, Tvj=150 °C,

-

253

-

Err

(Note1)

Reverse recovery energy per pulse

Inductive load

-

245 - mJ

R

CC'+EE'

Internal lead resistance

Main terminals-chip, TC=25 °C

(Note4)

-

0.2 - mΩ

rg

Internal gate resistance

- - 2.2 - Ω

MAXIMUM RATINGS (Tvj=25 °C, unless otherwise specified)

ELECTRICAL CHARACTERISTICS (Tvj=25 °C, unless otherwise specified)

<IGBT Modules>

CM1000HA-34S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2016

3

CMH-11148

Ver.1.0

Symbol

Item

Conditions

Limits

Unit

Min.

Typ.

Max.

R

th(j - c ) Q

Thermal resistance
Junction to case, IGBT

(Note4)

- - 21

K/kW

R

th(j - c)D

Junction to case, FWD

(Note4)

- - 32

R

th(c- s )

Contact thermal resistance
Case to heat sink,

-

18 - K/kW

Thermal grease applied

(Note4, 6)

Symbol

Item

Conditions

Limits

Unit

Min.

Typ.

Max.

Mt

Mounting torque

Main terminals

M 6 screw

3.5

4.0

4.5

N·m

Ms

Mounting torque

Mounting to heat sink

M 5 screw

2.5

3.0

3.5

N·m

ds

Creepage distance
Terminal to terminal

22.0 - -

mm

Terminal to base plate

21.9 - -

da

Clearance
Terminal to terminal

16.5 - -

mm

Terminal to base plate

12.5 - -

ec

Flatness of base plate

On the centerline X, Y

(Note7)

-50 - +100

μm

m

mass - -

490 - g

*:

This product is compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment (RoHS) directive 2011/65/EU.

Note1.

Represent ratings and characteristics of the anti-parallel, emitter-collector free-wheeling diode (FWD).

2.

Junction temperature (Tvj) should not exceed T

vjm a x

rating.

3.

Pulse width and repetition rate should be such that the device junction temperature (Tvj) dose not exceed T

vjm a x

rating.

4.

Case temperature (TC) and heat sink temperature (TS) are defined on the each surface (mounting side) of base plate and heat sink just under the chips.

Refer to the figure of chip location.

5.

Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit.

6.

Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K)/D

(C-S)

=100 μm.

7.

The base plate (mounting side) flatness measurement points (X, Y) are shown in the following figure.

Y

X

+:Convex

-:Concave

+:Convex

-:Concave

Mounting side

Mounting side

Mounting

side

8.

Use the following screws when mounting the printed circuit board (PCB) on the standoffs.

The length of the screw depends on the PCB thickness (t1.0).

Type

Size

Tightening torque

Recommended tightening method

(1)

PT

K25×8

0.55 ± 0.055 N・m

(2)

PT

K25×10

0.85 ± 0.085 N・m

by handwork (equivalent to 30 r/min

(3)

DELTA PT

25×8

0.55 ± 0.055 N・m

by mechanical screw driver)

(4)

DELTA PT

25×10

0.85 ± 0.085 N・m

~ 600 r/min (by mechanical screw driver)

(5)

B1 tapping screw

φ2.6×10 or φ2.6×12

0.85 ± 0.085 N・m

THERMAL RESISTANCE CHARACTERISTICS

MECHANICAL CHARACTERISTICS