< HVIGBT MODULES >
CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1000E4C-66R
I
C ·······························································
V
CES ·························································
1000A
3300V
1-element in a Pack (for brake chopper)
Insulated Type
LPT-IGBT / Soft Recovery Diode
AlSiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
December 2012
HVM-1055-F
1
< HVIGBT MODULES >
CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol Item Conditions Ratings Unit
V
Collector-emitter voltage
CES
V
Gate-emitter voltage VCE = 0V, Tj = 25°C ± 20 V
GES
IC DC, Tc = 95°C 1000 A
I
CRM
IE DC 1000 A
I
ERM
P
Maximum power dissipation (Note 3) Tc = 25°C, IGBT part 10400 W
tot
V
Isolation voltage RMS, sinusoidal, f = 60Hz, t = 1 min. 6000 V
iso
Ve Partial discharge extinction voltage RMS, sinusoidal, f = 60Hz, QPD 10 pC 2600 V
Tj Junction temperature 50 ~ +150 °C
T
Operating junction temperature 50 ~ +150 °C
jop
T
Storage temperature 55 ~ +150 °C
stg
t
Short circuit pulse width VCC = 2500V, VCE V
psc
Collector current
Emitter current
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
(Note 2)
VGE = 0V, Tj = -40…+150°C 3300
= 0V, Tj = 50°C 3200
V
GE
(Note 1)
Pulse
Pulse
2000 A
(Note 1)
2000 A
, VGE =15V, Tj =150°C 10 s
CES
V
ELECTRICAL CHARACTERISTICS
Symbol Item Conditions
Tj = 25°C — — 4.0
I
Collector cutoff current VCE = V
CES
V
Gate-emitter threshold voltage VCE = 10 V, IC = 100 mA, Tj = 25°C 5.7 6.2 6.7 V
GE(th)
I
Gate leakage current VGE = V
GES
C
Input capacitance — 140.0 — nF
ies
C
Output capacitance — 8.7 — nF
oes
C
Reverse transfer capacitance
res
V
CE
= 25°C
T
j
, VGE = 0V
CES
, VCE = 0V, Tj = 25°C 0.5 — 0.5 µA
GES
Tj = 125°C — 4.0 —
T
= 150°C — 24.0 —
j
= 10 V, VGE = 0 V, f = 100 kHz
QG Total gate charge VCC = 1800V, IC = 1000A, VGE = ±15V — 10.7 — µC
Tj = 25°C — 2.45 —
Tj = 125°C — 3.10 3.70
= 150°C — 3.25 —
T
j
V
Collector-emitter saturation voltage
CEsat
I
= 1000 A
C
= 15 V
V
GE
(Note 4)
Tj = 25°C — 1.00 —
t
Turn-on delay time
d(on)
tr Turn-on rise time
E
Turn-on switching energy
on(10%)
Eon Turn-on switching energy
(Note 5)
(Note 6)
= 1800 V
V
CC
= 1000 A
I
C
= ±15 V
V
GE
R
= 2.4
G(on)
= 150 nH
L
s
Inductive load
Tj = 125°C — 0.95 1.25
T
= 150°C — 0.95 1.25
j
Tj = 25°C — 0.28 —
Tj = 125°C — 0.30 0.50
T
= 150°C — 0.30 0.50
j
Tj = 25°C — 1.40 —
Tj = 125°C — 1.85 —
T
= 150°C — 2.00 —
j
Tj = 25°C — 1.50 —
Tj = 125°C — 1.95 —
T
= 150°C — 2.15 —
j
Tj = 25°C — 2.70 —
t
Turn-off delay time
d(off)
tf Turn-off fall time
E
Turn-off switching energy
off(10%)
E
Turn-off switching energy
off
December 2012
(HVM-1055-F)
= 1800 V
V
CC
= 1000 A
I
C
= ±15 V
V
GE
R
= 8.4
G(off)
= 150 nH
L
s
(Note 5)
Inductive load
(Note 6)
Tj = 125°C — 2.80 3.30
T
= 150°C 2.85 3.30
j
Tj = 25°C — 0.30 —
Tj = 125°C — 0.35 1.00
T
= 150°C — 0.40 1.00
j
Tj = 25°C — 1.35 —
Tj = 125°C — 1.65 —
T
= 150°C 1.70 —
j
Tj = 25°C — 1.50 —
Tj = 125°C — 1.80 —
T
= 150°C — 1.90 —
j
Limits
Min Typ Max
Unit
mA
— 4.0 — nF
V
µs
µs
J
J
µs
µs
J
J
2
< HVIGBT MODULES >
j
j
j
)
g
(
)
AA
CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (continuation)
Symbol Item Conditions
VEC
trr Reverse recovery time
Irr Reverse recovery current
Qrr Reverse recovery charge
E
rec(10%)
E
rec
Emitter-collector voltage
Reverse recovery energy
Reverse recovery energy
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 5)
(Note 2)
(Note 6)
I
= 1000 A
E
VGE = 0 V
VCC = 1800 V
= 1000 A
I
C
= ±15 V
V
GE
R
G(on)
= 150 nH
L
s
Inductive load
(Note 4)
= 2.4
Tj = 25°C — 2.15 —
Tj = 125°C — 2.30 2.80
= 150°C — 2.25 —
T
j
Tj = 25°C — 0.50 —
Tj = 125°C — 0.70
= 150°C — 0.80 —
T
Tj = 25°C — 850 —
Tj = 125°C — 1000 —
= 150°C — 1050 —
T
Tj = 25°C — 700 —
Tj = 125°C — 1150
Tj = 150°C — 1350 —
Tj = 25°C 0.70 —
Tj = 125°C — 1.20
Tj = 150°C — 1.35 —
Tj = 25°C 0.80 —
Tj = 125°C — 1.35
T
= 150°C — 1.55 —
Limits
Min Typ Max
Unit
V
µs
A
µC
J
J
THERMAL CHARACTERISTICS
Symbol Item Conditions
R
Junction to Case, IGBT part — — 12.0 K/kW
th(j-c)Q
Thermal resistance
th(j-c)D
R
Contact thermal resistance Case to heat sink,
th(c-s
Junction to Case, FWDi part — — 22.5 K/kWR
Junction to Case, Clamp-Di part — — 22.5 K/kW
= 1W/m·k, D
rease
= 100m — 7.0 — K/kW
c-s
Limits
Min Typ Max
Unit
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Mt M8 : Main terminals screw 7.0 — 22.0 N·m
Ms M6 : Mounting screw 3.0 — 6.0 N·m
Mt
Mounting torque
M4 : Auxiliary terminals screw 1.0 — 3.0 N·m
m Mass — 1.2 — kg
CTI Comparative tracking index 600 — — —
da Clearance 19.5 — — mm
ds Creepage distance 32.0 — — mm
L
Parasitic stray inductance
P CE
R
Internal lead resistance TC = 25°C, Collector to Emitter — 0.18 — m
CC’+EE’
R
Internal lead resistance TC = 25°C, Anode to Cathode — 0.36 — m
’+KK’
Collector to Emitter — 16.5 — nH
Anode to Cathode — 33.0 — nH
rg Internal gate resistance TC = 25°C — 2.25 —
Note1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed T
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWD
anode to cathode clamp diode (Clamp-Di).
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
on(10%)
/ E
off(10%)
5. E
6. Definition of all items is according to IEC 60747, unless otherwise specified.
) should not exceed T
j
/ E
are the integral of 0.1VCE x 0.1IC x dt.
rec(10%)
rating (150°C).
jmax
rating(150°C).
opmax
) and the brake chopper,
i
Limits
Min Typ Max
Unit
December 2012
(HVM-1055-F)
3
< HVIGBT MODULES >
E
CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
2000
Tj = 1 50° C
1600
1200
80 0
Collector C urrent [A]
40 0
0
0123456
VGE = 19V
VGE = 15V
VGE = 13 V
VGE = 11 V
VGE = 9V
Collector - Emitter Voltage [V]
COLLECTOR-EMITTER SATURATION VOLTAG
CHARACTERISTICS (TYPICAL)
Collector C urrent [A]
2000
VCE = V
GE
1600
1200
80 0
40 0
0
024681012
Tj = 1 5 0 °C
Gate - Emitter Voltage [V]
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
Tj = 25 ° C
20 00
VGE = 15 V
16 00
Tj = 25°C
12 00
800
Tj = 1 2 5 °C
Tj = 150° C
Collector C urrent [A]
400
0
012345
Collec tor-Emitter Saturation Voltage [V]
20 00
16 00
12 00
800
Tj = 125° C
Tj = 25° C
Tj = 1 5 0 °C
Emitter Current [A]
400
0
012345
Emitter-Collect or Voltage [V]
December 2012
(HVM-1055-F)
4
< HVIGBT MODULES >
CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
10 00
Ci es
100
10
Capacitance [nF]
VGE = 0V, Tj = 25°C
f = 10 0kHz
Co es
Cres
1
0.1 1 10 100
Collector-Emitter Voltage [V]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
20
VCE = 18 00V, IC = 1000A
Tj = 2 5 ° C
15
10
5
0
-5
Gate-Emitter Voltage [V]
-1 0
-1 5
0481216
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
7
VCC = 18 00 V, VGE = ±15V
G(on)
R
6
L
= 150nH, Tj = 125°C
S
Induc tiv e l oa d
= 2.4 , R
G( off)
= 8.4
5
4
3
2
Switching Energies [J/pulse]
1
0
0 400 80 0 1 200 1 600 20 00
Collector Current [A]
Eon
Eoff
Ere c
7
VCC = 18 00 V, VGE = ±15V
6
G(on)
R
L
S
Induc tiv e l oa d
= 150nH, Tj = 150°C
= 2.4 , R
G( off)
= 8.4
5
4
3
2
Switching Energies [J/pulse]
1
0
0 400 80 0 1 200 1 600 20 00
Collector Current [A]
Eon
Eoff
Erec
December 2012
(HVM-1055-F)
5
< HVIGBT MODULES >
CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
7
VCC = 1800V, IC = 10 00A
VGE = ±1 5 V, LS = 15 0nH
6
Tj = 12 5°C , Indu cti ve lo ad
5
4
Eon
3
2
Switching Energies [J/pulse]
1
Erec
0
0 5 10 15 20
Gate res ist or [Ohm]
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
Eoff
7
VCC = 1800V, IC = 10 00A
VGE = ±1 5 V, LS = 15 0nH
6
Tj = 15 0°C , Indu cti ve lo ad
5
4
Eon
3
Eo ff
2
Switching Energies [J/pulse]
1
Ere c
0
05101520
Gate res ist or [Ohm]
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
10 0
= 18 00V, VGE = ± 15V
CC
= 2.4, R
G(on)
= 1 50nH, T j = 125° C
S
n duct ive l oa d
G( off)
= 8.4
10
1
tf
Switching T imes [µs]
0.1
tr
0.0 1
10 0 10 00 1 0000
Collector C urr ent [A]
td(off)
td (on)
10 0
= 18 00V, VGE = ± 15V
CC
= 2.4, R
G(on)
= 1 50nH, T j = 150° C
S
n duct ive l oa d
G( off)
= 8.4
10
1
tr
Switching T imes [µs]
0.1
tf
0.0 1
10 0 10 00 1 0000
Collector C urr ent [A]
td(off)
td(on)
December 2012
(HVM-1055-F)
6
< HVIGBT MODULES >
CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
10 0
VCC = 18 00V, VGE = ± 15V
R
Tj = 1 25° C, In duc tiv e loa d
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
= 2.4 , LS = 150 nH
G(on)
10000
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
10 0
VCC = 18 00V, VGE = ± 15V
R
Tj = 1 50° C, In duc tiv e loa d
= 2.4 , LS = 150 nH
G(on)
10000
10
1
Reverse Recovery Time [µs]
0.1
100 1000 10000
Emitter Current [A]
Irr
trr
1000
100
10
10
1
Reverse Recovery Current [A]
Reverse Recovery Time [µs]
0.1
100 1000 10000
Emitter Current [A]
Irr
trr
1000
100
Reverse Recovery Current [A]
10
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
R
= 12 .0 K/k W
th(j -c )Q
R
= 22.5K /k W
th(j -c )D
1
0.8
n
i
RZ
icjth
1
)(
t
)(
t
i
exp1
0.6
0.4
0.2
Normalized Transient Thermal impedance
0
0.001 0.0 1 0.1 1 10
December 2012
Tim e [s]
(HVM-1055-F)
1234
[K/kW] :
R
i
[sec] :
i
0.0096 0.1893 0.4044 0.3967
0.0001 0.0058 0.0602 0.3512
7
< HVIGBT MODULES >
CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
REVERSE BIAS SAFE OPERATING AREA
40 00
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
(RBSOA)
VCC 25 00 V, VGE = ± 15V
Tj = 15 0 °C , R
G(off)
= 8. 4
SHORT CIRCUIT
SAFE OPERATING AREA (SCSOA)
16
VCC 25 00V, VGE = ±1 5V
R
= 2.4, R
G(on)
Tj = 1 50° C
G( off)
= 8.4
30 00
20 00
Collector C urrent [A]
10 00
0
0 1000200030004000
Collector-Emitter Voltage [V]
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
40 00
VCC 25 00 V, di /d t < 6 kA/µ s
Tj = 15 0 °C
30 00
12
8
Collector Current [kA]
4
0
0 1 000 20 00 3 000 40 00
Collector-Em itter Voltage [V]
20 00
10 00
Reverse Recovery Current [A]
0
0 1000200030004000
December 2012
Emitter-Collector Voltage [V]
(HVM-1055-F)
8
< HVIGBT MODULES >
CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
December 2012
(HVM-1055-F)
9
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