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CM1000DXP-24T
Data Sheet
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Mitsubishi Electric US, Inc CM1000DX-24T, CM1000DXP-24T Data Sheet

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<IGBT Modules>
Publication Date : January 2017
CMH-11237
Ver.1.0
DX
Collector current IC .............…..................…
1 0 0
0
A
Collector-emitter voltage V
CES
..................
1 2 0
0
V
Maximum junction temperature T
vjmax
.........
1 7
5
°C
●Flat base type
●Copper base plate (Nickel-plating)
●RoHS Directive compliant
●Tin-plating pin terminals
DXP
Collector current IC .............…..................…
1 0 0
0
A
Collector-emitter voltage V
CES
..................
1 2 0
0
V
Maximum junction temperature T
vjmax
.........
1 7
5
°C
●Flat base type
●Copper base plate (Nickel-plating)
●RoHS Directive compliant
●Tin-plating pressfit terminals
dual switch (half-bridge)
●UL Recognized under UL1557, File No. E323585
APPLICATION
OPTION (Below options are available.)
●PC-TIM (Phase Change Thermal Interface Material) pre-apply
●V
CEsat
selection for parallel connection
INTERNAL CONNECTION
TERMINAL CODE
11 6 7
Th
NTC
Di1
Tr1
4 3 1
2
Tr2
9 8 10
Di2
5
1.
TH1
6.
C1
2.
TH2
7.
E2
3.
Cs1
8.
Es2
4.
G1
9.
G2
5.
Es1
10.
Cs2
11.
C2E1
CM1000DX-24T/CM1000DXP-24T
HIGH POWER SWITCHING USE INSULATED TYPE
AC Motor Control, Motion/Servo Control, Power supply, etc.
<IGBT Modules>
CM1000DX-24T/CM1000DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : January 2017
CMH-11237
Ver.1.0
OUTLINE DRAWING
Dimension in mm
DX
TERMINAL
<IGBT Modules>
CM1000DX-24T/CM1000DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : January 2017
CMH-11237
Ver.1.0
OUTLINE DRAWING
Dimension in mm
DXP
TERMINAL
<IGBT Modules>
CM1000DX-24T/CM1000DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : January 2017
CMH-11237
Ver.1.0
OUTLINE DRAWING(Cont.)
Dimension in mm
COM. SECTION A
Tolerance otherwise specified
Division of Dimension
Tolerance
0.5
to 3
±0.2 over 3
to 6
±0.3
over 6
to 30
±0.5
over 30
to 120
±0.8 over 120
to 400
±1.2
Symbol
Item
Conditions
Rating
Unit
V
CES
Collector-emitter voltage
G-E short-circuited
1200
V
V
GES
Gate-emitter voltage
C-E short-circuited
± 20
V IC
Collector current DC, TC=116 °C
(Note2, 4)
1000
A
I
CRM
Pulse, Repetitive
(Note3)
2000
P
tot
Total power dissipation
TC=25 °C
(Note2, 4)
5355
W
IE
(Note1)
Emitter current DC
(Note2)
1000
A
I
ERM
(Note1)
Pulse, Repetitive
(Note3)
2000
Symbol
Item
Conditions
Rating
Unit
V
is o l
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
2500
V
T
vjmax
Maximum junction temperature
Instantaneous event (overload)
175
°C
T
Cm a x
Maximum case temperature
(Note4)
125
T
vjop
Operating junction temperature
Continuous operation (under switching)
-40 ~ +150
°C
T
st g
Storage temperature
-
-40 ~ +125
MAXIMUM RATINGS (Tvj=25 °
INVERTER PART IGBT/FWD
C, unless otherwise specified)
MODULE
<IGBT Modules>
CM1000DX-24T/CM1000DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : January 2017
CMH-11237
Ver.1.0
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
I
CE S
Collector-emitter cut-off current
VCE=V
CES
, G-E short-circuited
- - 1.0
mA
I
GE S
Gate-emitter leakage current
VGE=V
GES
, C-E short-circuited
- - 0.5
μA
V
GE (th)
Gate-emitter threshold voltage
IC=100 mA, VCE=10 V
5.4
6.0
6.6
V
V
CE sat
(Terminal)
IC=1000 A, VGE=15 V,
Tvj=25 °C
-
1.55
1.95
Refer to the figure of test circuit
Tvj=125 °C
-
1.70 - V
Collector-emitter saturation voltage
(Note5)
Tvj=150 °C
-
1.75 -
V
CE sat
(Chip)
IC=1000 A,
Tvj=25 °C
-
1.50
1.75
VGE=15 V,
Tvj=125 °C
-
1.70 - V
(Note5)
Tvj=150 °C
-
1.75 -
C
ies
Input capacitance
- -
242.5
C
oe s
Output capacitance
VCE=10 V, G-E short-circuited
- - 6.8
nF
C
re s
Reverse transfer capacitance
- -
3.0
QG
Gate charge
VCC=600 V, IC=1000 A, VGE=15 V
-
7.5 - μC
t
d( o n)
Turn-on delay time
VCC=600 V, IC=1000 A, VGE=±15 V,
- - 800
tr
Rise time
- - 400
ns
t
d( o ff )
Turn-off delay time
RG=2.0 Ω, Inductive load
- - 1300
tf
Fall time - -
400
VEC
(Note1)
(Terminal)
IE=1000 A, G-E short-circuited,
Tvj=25 °C
-
1.65
2.15
Refer to the figure of test circuit
Tvj=125 °C
-
1.75 - V
Emitter-collector voltage
(Note5)
Tvj=150 °C
-
1.80 -
VEC
(Note1)
(Chip)
IE=1000 A,
Tvj=25 °C
-
1.60
1.95
G-E short-circuited,
Tvj=125 °C
-
1.60 - V
(Note5)
Tvj=150 °C
-
1.60 - t
rr
(Note1)
Reverse recovery time
VCC=600 V, IE=1000 A, VGE=±15 V,
- - 500
ns
Qrr
(Note1)
Reverse recovery charge
RG=2.0 Ω, Inductive load
-
78 - μC
Eon
Turn-on switching energy per pulse
VCC=600 V, IC=IE=1000 A,
-
150.5
-
mJ
E
off
Turn-off switching energy per pulse
VGE=±15 V, RG=2.0 Ω, Tvj=150 °C,
-
128.4
- Err
(Note1)
Reverse recovery energy per pulse
Inductive load
-
69 - mJ
R
CC'+EE'
Internal lead resistance
Main terminals-chip, per switch, TC=25 °C
(Note4)
-
0.5 - mΩ
rg
Internal gate resistance
Per switch
-
0.4 - Ω
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
R25
Zero-power resistance
TC=25 °C
(Note4)
4.85
5.00
5.15
kΩ ΔR/R
Deviation of resistance
R
100
=493 Ω, TC=100 °C
(Note4)
-7.3 - +7.8
%
B
(2 5/50)
B-constant
Approximate by equation
(Note6)
-
3375 - K
P25
Power dissipation
TC=25 °C
(Note4)
- - 10
mW
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
R
th(j - c ) Q
Thermal resistance Junction to case, per Inverter IGBT
(Note4)
- - 28
K/kW
R
th(j - c)D
Junction to case, per Inverter FWD
(Note4)
- - 49
R
th(c- s )
Contact thermal resistance Case to heat sink,
Thermal grease applied
(Note4, 7)
-
7.1
-
K/kW
per 1 module,
PC-TIM applied
(Note4, 8)
-
1.9
-
ELECTRICAL CHARACTERISTICS (Tvj=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWD
NTC THERMISTOR PART
THERMAL RESISTANCE CHARACTERISTICS
<IGBT Modules>
CM1000DX-24T/CM1000DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : January 2017
CMH-11237
Ver.1.0
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
Mt
Mounting torque
Main terminals
M 6 screw
3.5
4.0
4.5
N·m
Ms
Mounting torque
Mounting to heat sink
M 5 screw
2.5
3.0
3.5
N·m
Solder pin type (DX) Terminal to terminal
17.3 - -
mm
ds
Creepage distance Terminal to base plate
17.5 - -
Pressfit pin type (DXP) Terminal to terminal
16.5 - -
mm
Terminal to base plate
18.0 - -
Solder pin type (DX) Terminal to terminal
10.3 - -
mm
da
Clearance Terminal to base plate
11.7 - -
Pressfit pin type (DXP) Terminal to terminal
10.2 - -
mm
Terminal to base plate
11.8 - -
ec
Flatness of base plate
On the centerline X, Y
(Note9)
±0 - +200
μm
m
mass - -
490 - g
*:
This product is compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment (RoHS) directive 2011/65/EU.
Note1.
Represent ratings and characteristics of the anti-parallel, emitter-collector free-wheeling diode (FWD).
2.
Junction temperature (Tvj) should not increase beyond T
vjm a x
rating.
3.
Pulse width and repetition rate should be such that the device junction temperature (Tvj) dose not exceed T
vjm a x
rating.
4.
Case temperature (TC) and heat sink temperature (TS) are defined on the each surface (mounting side) of base plate and heat sink just under the chips.
Refer to the figure of chip location.
5.
Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit.
6.
)
TT
/()
R
R
ln(B
)/(
502550
25
5025
11
R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]
R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]
7.
Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K)/D
(C-S)
=50 μm.
8.
Typical value is measured by using PC-TIM of λ=3.4 W/(m·K)/D
(C-S)
=50 μm.
9.
The base plate (mounting side) flatness measurement points (X, Y) are shown in the following figure.
Y X +:Convex
-:Concave
+:Convex
-:Concave
Mounting side
Mounting side
2 mm
2 mm
Mounting side
10.
Use the following screws when mounting the printed circuit board (PCB) on the standoffs.
PCB thickness : t1.6~t2.0
Type
Size Tightening torque
Recommended tightening method
(N・m)
B1
φ2.6×10
0.5 by handwork
tapping screw
φ2.6×12
The mounting / dismounting permission times : once
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
VCC
(DC) Supply voltage
Applied across C1-E2 terminals
-
600
850
V
V
GEon
Gate (-emitter drive) voltage
Applied across G1-E1s/G2-E2s terminals
13.5
15.0
16.5
V RG
External gate resistance
Per switch
2.0 - 20
Ω
MECHANICAL CHARACTERISTICS
RECOMMENDED OPERATING CONDITIONS
<IGBT Modules>
CM1000DX-24T/CM1000DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : January 2017
CMH-11237
Ver.1.0
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
DX
DXP
Tr1/Tr2: IGBT, Di1/Di2: FWD, Th: NTC thermistor
<IGBT Modules>
CM1000DX-24T/CM1000DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : January 2017
CMH-11237
Ver.1.0
Option: PC-TIM applied baseplate outline
<IGBT Modules>
CM1000DX-24T/CM1000DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : January 2017
CMH-11237
Ver.1.0
VCC
-VGE
+VGE
-VGE
+
vCE
vGE
0
iE
iC
6
7
11
4
9
8
Load
RG
3
5
10
vCE
～
t
tf
tr
t
d( o n)
iC
10%
90 %
90 %
vGE
～
～
～
0 V
0 A
0
t
d( o ff )
t
Irr
Qrr=0.5×Irr×trr
0.5×Irr
t
trr
iE
0 A
IE
Switching characteristics test circuit and waveforms
trr, Qrr characteristics test waveform
0.1×ICM
ICM
VCC
vCE
iC
t
0
ti
0.1×VCC
0.1×VCC
VCC
ICM
vCE
iC
t
0
0.02×ICM
0.1×VCC
VCC
ICM
vCE
iC
t
0
0.02×ICM
ti
IEM
vEC
iE
t
0 V
ti
t
VCC
0 A
IGBT Turn-on switching energy
IGBT Turn-off switching energy
FWD Reverse recovery energy
Switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
V
G-E short-
circuited
6
11
7
4
5
9
8
VGE=15 V
IC
3
10
V
6
11
7
4
5
9
8
VGE=15 V
IC
3
10
G-E short-
circuited
V
G-E short-
circuited
6
11
7
4
5
9
8
VGE=15 V
IE
3
10
G-E short-
circuited
V
6
11
7
4
5
9
8
3
10
G-E short-
circuited
G-E short-
circuited
IE
Tr1 Tr2 Di1
Di2
V
CEsat
characteristics test circuit
VEC characteristics test circuit
TEST CIRCUIT AND WAVEFORMS
TEST CIRCUIT
<IGBT Modules>
CM1000DX-24T/CM1000DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : January 2017
10
CMH-11237
Ver.1.0
OUTPUT CHARACTERISTICS
COLLECTOR-EMITTER SATURATION VOLTAGE
(TYPICAL)
CHARACTERISTICS
(TYPICAL)
Tvj=25 °C
(chip)
VGE=15 V
(chip)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION VOLTAGE V
CEsat
(V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE CHARACTERISTICS
FREE WHEELING DIODE
(TYPICAL)
FORWARD CHARACTERISTICS
(TYPICAL)
Tvj=25 °C
(chip)
G-E short-circuited
(chip)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
EMITTER CURRENT I
E
(A)
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
VGE=20 V
12 V
11 V
10 V
8 V
15 V
9 V
13.5 V
IC=2000 A
IC=1000 A
IC=500 A
Tvj=125 °C
Tvj=150 °C
Tvj=25 °C
Tvj=150 °C
Tvj=25 °C
Tvj=125 °C
PERFORMANCE CURVES
INVERTER PART
<IGBT Modules>
CM1000DX-24T/CM1000DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : January 2017
11
CMH-11237
Ver.1.0
HALF-BRIDGE SWITCHING CHARACTERISTICS
HALF-BRIDGE SWITCHING CHARACTERISTICS
(TYPICAL)
(TYPICAL)
VCC=600 V, RG=2.0 Ω, VGE=±15 V, INDUCTIVE LOAD
VCC=600 V, IC=1000 A, VGE=±15 V, INDUCTIVE LOAD
-----------------: Tvj=150 °C, - - - - -: Tvj=125 °C
-----------------: Tvj=150 °C, - - - - -: Tvj=125 °C
SWITCHING TIME (ns)
SWITCHING TIME (ns)
COLLECTOR CURRENT IC (A)
EXTERNAL GATE RESISTANCE RG (Ω)
HALF-BRIDGE SWITCHING CHARACTERISTICS
HALF-BRIDGE SWITCHING CHARACTERISTICS
(TYPICAL)
(TYPICAL)
VCC=600 V, RG=2.0 Ω, VGE=±15 V, INDUCTIVE LOAD,
VCC=600 V, IC/IE=1000 A, VGE=±15 V, INDUCTIVE LOAD,
-----------------: Tvj=150 °C, - - - - -: Tvj=125 °C, PER PULSE
-----------------: Tvj=150 °C, - - - - -: Tvj=125 °C, PER PULSE
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
COLLECTOR CURRENT IC (A)
EXTERNAL GATE RESISTANCE RG (Ω)
EMITTER CURRENT IE (A)
Eon
E
off
Err
t
d( o n )
tr
tf
t
d( o ff)
Eon
E
off
Err
t
d( o n )
tr
t
d( o ff)
tf
PERFORMANCE CURVES
INVERTER PART
<IGBT Modules>
CM1000DX-24T/CM1000DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : January 2017
12
CMH-11237
Ver.1.0
CAPACITANCE CHARACTERISTICS
FREE WHEELING DIODE
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
VCC=600 V, RG=2.0 Ω, VGE=±15 V, INDUCTIVE LOAD
G-E short-circuited, Tvj=25 °C
---------------: Tj=150 °C, - - - - -: Tj=125 °C
CAPACITANCE (nF)
t
rr
(ns), I
rr
(A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
EMITTER CURRENT IE (A)
GATE CHARGE CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(TYPICAL)
(MAXIMUM)
Single pulse, TC=25 °C
VCC=600 V, IC=1000 A, Tvj=25 °C
R
th(j - c ) Q
=28 K/kW, R
th(j - c) D
=49 K/kW
GATE-EMITTER VOLTAGE V
GE
(V)
NORMALIZED TRANSIENT THERMAL RESISTANCE Z
th(j- c)
GATE CHARGE QG (nC)
TIME (S)
trr
Irr
C
ies
C
oes
C
res
PERFORMANCE CURVES
INVERTER PART
<IGBT Modules>
CM1000DX-24T/CM1000DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : January 2017
13
CMH-11237
Ver.1.0
TURN-OFF SWITCHING SAFE OPERATING AREA
SHORT-CIRCUIT SAFE OPERATING AREA
(REVERSE BIAS SAFE OPERATING AREA)
(MAXIMUM)
(MAXIMUM)
VCC850 V, RG=2.0~20 Ω, VGE=±15 V,
-----------------: Tvj=25~150 °C (Normal load operations (Continuous)
VCC800 V, RG=2.0~20 Ω, VGE=±15 V,
- - - - - -: Tvj=175 °C (Unusual load operations (Limited period)
Tvj= 25 ~ 150 °C, tW8 μs, Non-Repetitive
NORMALIZED COLLECTOR CURRENT I
C
NORMALIZED COLLECTOR CURRENT I
C
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
TEMPERATURE CHARACTERISTICS
(TYPICAL)
RESISTANCE R (kΩ)
TEMPERATURE T (°C)
PERFORMANCE CURVES
INVERTER PART
NTC thermistor part
Note: The characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
<IGBT Modules>
CM1000DX-24T/CM1000DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : January 2017
14
CMH-11237
Ver.1.0
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
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