Mitsubishi Electric US, Inc CM1000DXL-24S Data Sheet
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current I
Collector-emitter voltage V
Maximum junction temperature T
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
Dual switch (Half-Bridge)
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
●RoHS Directive compliant
●Recognized under UL1557, File E323585
.............….......................… 900A *
C
......................… 1200V
CES
.............. 175°C
jmax
Dimension in mm
TERMINAL SECTION A
t=0.8
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
The tolerance of size between
terminals is assumed to be ±0.4.
C1
(1)
C1
(2)
E2
(3)
E2
(4)
Di1
Es1
(62)
Tr1
G1
(61)
TH2
(57)
Th
NTC
TH1
(
56)
Cs1
(52)
Es2
(47)
Di2
Tr2
G2
(46)
Cs2
(42)
C1E2
(3
C1E2
(32)
3)
INTERNAL CONNECTION
Publication Date : December 2013
1
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULA
MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
V
V
IC DC, TC=124 °C
ICM
I
P
IE
IEM
I
MODULE
V
T
T
T
T
TED TYPE
Symbol Item Conditions Rating Unit
Collector-emitter voltage G-E short-circuited 1200 V
CES
Gate-emitter voltage C-E short-circuited ± 20 V
GES
Collector current
CRM
Total power dissipation TC=25 °C
tot
(Note1)
DC
ERM
(Note1)
(Note1)
Emitter current
(Note2)
1000
Pulse, Repetitive
(Note2)
(Note2)
Pulse, Repetitive
Symbol Item Conditions Rating Unit
Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V
isol
Maximum junction temperature Instantaneous event (overload) 175
jmax
Maximum case temperature
Cmax
Operating junction temperature Continuous operation (under switching) -40 ~ +150
jop
Storage temperature - -40 ~ +125
stg
(Note4)
125
(Note2, 4)
900 *
A
(Note3)
(Note2, 4)
2000
7500 W
900 *
(Note3)
1000
2000
A
°C
°C
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol Item Conditions
I
Collector-emitter cut-off current VCE=V
CES
I
Gate-emitter leakage current VGE=V
GES
V
Gate-emitter threshold voltage IC=100 mA, VCE=10 V 5.4 6.0 6.6 V
GE(th)
V
CEsat
(Terminal)
Collector-emitter saturation voltage
V
CEsat
(Chip)
C
Input capacitance - - 100
ies
C
Output capacitance - - 20
oes
C
Reverse transfer capacitance
res
IC=1000 A, VGE=15 V, Tj=25 °C - 1.85 2.30
Refer to the figure of test circuit Tj=125 °C - 2.05 -
(Note5)
IC=1000 A, Tj=25 °C - 1.70 2.15
VGE=15 V, Tj=125 °C - 1.90 -
(Note5)
V
, G-E short-circuited - - 1.0 mA
CES
, C-E short-circuited - - 0.5 μA
GES
T
T
=10 V, G-E short-circuited
CE
=150 °C - 2.10 -
j
=150 °C - 1.95 -
j
QG Gate charge VCC=600 V, IC=1000 A, VGE=15 V - 2300 - nC
t
Turn-on delay time - - 800
d(on)
tr Rise time
t
Turn-off delay time - - 600
d(off)
tf Fall time
(Note1)
VEC
(Terminal)
Emitter-collector voltage
(Note1)
VEC
(Chip)
(Note1)
t
Reverse recovery time VCC=600 V, IE=1000 A, VGE=±15 V, - - 300 ns
rr
(Note1)
Qrr
Reverse recovery charge RG=0 Ω, Inductive load - 53.3 - μC
V
=600 V, IC=1000 A, VGE=±15 V,
CC
R
=0 Ω, Inductive load
G
IE=1000 A, G-E short-circuited, Tj=25 °C - 1.85 2.30
Refer to the figure of test circuit Tj=125 °C - 1.85 -
(Note5)
T
=150 °C - 1.85 -
j
IE=1000 A, Tj=25 °C - 1.70 2.15
G-E short-circuited, Tj=125 °C - 1.70 -
(Note5)
T
=150 °C - 1.70 -
j
Limits
Min. Typ. Max.
- - 1.7
- - 200
- - 300
Unit
V
V
nF
ns
V
V
Publication Date : December 2013
2
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULA
ELECTRICAL CHARACTERISTICS (cont.; Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=1000 A, - 45.6 -
E
Err
R
rg Internal gate resistance Per switch - 2.0 - Ω
NTC THERMISTOR PART
R25 Zero-power resistance TC=25 °C
∆R/R Deviation of resistance R
B
P25 Power dissipation TC=25 °C
THERMAL RESISTANCE CHARACTERISTICS
R
R
R
TED TYPE
Symbol Item Conditions
Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, Tj=150 °C, - 97.1 -
off
(Note1)
Reverse recovery energy per pulse Inductive load - 96.7 - mJ
Internal lead resistance
CC'+EE'
Main terminals-chip, per switch,
T
=25 °C
C
(Note4)
Symbol Item Conditions
(Note4)
4.85 5.00 5.15 kΩ
=493 Ω, TC=100 °C
100
B-constant Approximate by equation
(25/50)
(Note4)
- - 10 mW
(Note4)
-7.3 - +7.8 %
(Note6)
- 3375 - K
Symbol Item Conditions
Junction to case, per Inverter IGBT
th(j-c)Q
th(j-c)D
Contact thermal resistance
th(c-s)
Thermal resistance
Junction to case, per Inverter DIODE
Case to heat sink, per 1 module,
Thermal grease applied
(Note4, 7)
(Note4)
- - 20 K/kW
(Note4)
- - 38 K/kW
Limits
Min. Typ. Max.
- - 0.5 mΩ
Limits
Min. Typ. Max.
Limits
Min. Typ. Max.
- 7 - K/kW
Unit
mJ
Unit
Unit
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Mt Main terminals M 6 screw 3.5 4.0 4.5 N·m
Ms
Mounting torque
Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m
m mass - - 690 - g
ds Creepage distance
da Clearance
ec Flatness of base plate On the centerline X, Y
Terminal to terminal 13.69 - -
Terminal to base plate 15.7 - -
Terminal to terminal 13.69 - -
Terminal to base plate 14.88 - -
(Note8)
±0 - +100 μm
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).
2. Junction temperature (T
3. Pulse width and repetition rate should be such that the device junction temperature (T
4. Case temperature (T
) should not increase beyond T
j
) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate and heat sink just under
C
jmax
rating.
) dose not exceed T
j
the chips. Refer to the figure of chip location.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise.
R
6.
5025
R
: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]
25
R
: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]
50
25
/()
ln(B
)/(
R
11
TT
502550
)
7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
Limits
Min. Typ. Max.
rating.
jmax
Unit
mm
mm
Publication Date : December 2013
3
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