< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current I
Collector-emitter voltage V
Maximum junction temperature T
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
Dual switch (Half-Bridge)
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
●RoHS Directive compliant
●Recognized under UL1557, File E323585
.............….......................… 900A *
C
......................… 1200V
CES
.............. 175°C
jmax
Dimension in mm
TERMINAL SECTION A
t=0.8
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
The tolerance of size between
terminals is assumed to be ±0.4.
C1
(1)
C1
(2)
E2
(3)
E2
(4)
Di1
Es1
(62)
Tr1
G1
(61)
TH2
(57)
Th
NTC
TH1
(
56)
Cs1
(52)
Es2
(47)
Di2
Tr2
G2
(46)
Cs2
(42)
C1E2
(3
C1E2
(32)
3)
INTERNAL CONNECTION
Publication Date : December 2013
1
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULA
MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
V
V
IC DC, TC=124 °C
ICM
I
P
IE
IEM
I
MODULE
V
T
T
T
T
TED TYPE
Symbol Item Conditions Rating Unit
Collector-emitter voltage G-E short-circuited 1200 V
CES
Gate-emitter voltage C-E short-circuited ± 20 V
GES
Collector current
CRM
Total power dissipation TC=25 °C
tot
(Note1)
DC
ERM
(Note1)
(Note1)
Emitter current
(Note2)
1000
Pulse, Repetitive
(Note2)
(Note2)
Pulse, Repetitive
Symbol Item Conditions Rating Unit
Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V
isol
Maximum junction temperature Instantaneous event (overload) 175
jmax
Maximum case temperature
Cmax
Operating junction temperature Continuous operation (under switching) -40 ~ +150
jop
Storage temperature - -40 ~ +125
stg
(Note4)
125
(Note2, 4)
900 *
A
(Note3)
(Note2, 4)
2000
7500 W
900 *
(Note3)
1000
2000
A
°C
°C
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol Item Conditions
I
Collector-emitter cut-off current VCE=V
CES
I
Gate-emitter leakage current VGE=V
GES
V
Gate-emitter threshold voltage IC=100 mA, VCE=10 V 5.4 6.0 6.6 V
GE(th)
V
CEsat
(Terminal)
Collector-emitter saturation voltage
V
CEsat
(Chip)
C
Input capacitance - - 100
ies
C
Output capacitance - - 20
oes
C
Reverse transfer capacitance
res
IC=1000 A, VGE=15 V, Tj=25 °C - 1.85 2.30
Refer to the figure of test circuit Tj=125 °C - 2.05 -
(Note5)
IC=1000 A, Tj=25 °C - 1.70 2.15
VGE=15 V, Tj=125 °C - 1.90 -
(Note5)
V
, G-E short-circuited - - 1.0 mA
CES
, C-E short-circuited - - 0.5 μA
GES
T
T
=10 V, G-E short-circuited
CE
=150 °C - 2.10 -
j
=150 °C - 1.95 -
j
QG Gate charge VCC=600 V, IC=1000 A, VGE=15 V - 2300 - nC
t
Turn-on delay time - - 800
d(on)
tr Rise time
t
Turn-off delay time - - 600
d(off)
tf Fall time
(Note1)
VEC
(Terminal)
Emitter-collector voltage
(Note1)
VEC
(Chip)
(Note1)
t
Reverse recovery time VCC=600 V, IE=1000 A, VGE=±15 V, - - 300 ns
rr
(Note1)
Qrr
Reverse recovery charge RG=0 Ω, Inductive load - 53.3 - μC
V
=600 V, IC=1000 A, VGE=±15 V,
CC
R
=0 Ω, Inductive load
G
IE=1000 A, G-E short-circuited, Tj=25 °C - 1.85 2.30
Refer to the figure of test circuit Tj=125 °C - 1.85 -
(Note5)
T
=150 °C - 1.85 -
j
IE=1000 A, Tj=25 °C - 1.70 2.15
G-E short-circuited, Tj=125 °C - 1.70 -
(Note5)
T
=150 °C - 1.70 -
j
Limits
Min. Typ. Max.
- - 1.7
- - 200
- - 300
Unit
V
V
nF
ns
V
V
Publication Date : December 2013
2
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULA
ELECTRICAL CHARACTERISTICS (cont.; Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=1000 A, - 45.6 -
E
Err
R
rg Internal gate resistance Per switch - 2.0 - Ω
NTC THERMISTOR PART
R25 Zero-power resistance TC=25 °C
∆R/R Deviation of resistance R
B
P25 Power dissipation TC=25 °C
THERMAL RESISTANCE CHARACTERISTICS
R
R
R
TED TYPE
Symbol Item Conditions
Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, Tj=150 °C, - 97.1 -
off
(Note1)
Reverse recovery energy per pulse Inductive load - 96.7 - mJ
Internal lead resistance
CC'+EE'
Main terminals-chip, per switch,
T
=25 °C
C
(Note4)
Symbol Item Conditions
(Note4)
4.85 5.00 5.15 kΩ
=493 Ω, TC=100 °C
100
B-constant Approximate by equation
(25/50)
(Note4)
- - 10 mW
(Note4)
-7.3 - +7.8 %
(Note6)
- 3375 - K
Symbol Item Conditions
Junction to case, per Inverter IGBT
th(j-c)Q
th(j-c)D
Contact thermal resistance
th(c-s)
Thermal resistance
Junction to case, per Inverter DIODE
Case to heat sink, per 1 module,
Thermal grease applied
(Note4, 7)
(Note4)
- - 20 K/kW
(Note4)
- - 38 K/kW
Limits
Min. Typ. Max.
- - 0.5 mΩ
Limits
Min. Typ. Max.
Limits
Min. Typ. Max.
- 7 - K/kW
Unit
mJ
Unit
Unit
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Mt Main terminals M 6 screw 3.5 4.0 4.5 N·m
Ms
Mounting torque
Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m
m mass - - 690 - g
ds Creepage distance
da Clearance
ec Flatness of base plate On the centerline X, Y
Terminal to terminal 13.69 - -
Terminal to base plate 15.7 - -
Terminal to terminal 13.69 - -
Terminal to base plate 14.88 - -
(Note8)
±0 - +100 μm
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).
2. Junction temperature (T
3. Pulse width and repetition rate should be such that the device junction temperature (T
4. Case temperature (T
) should not increase beyond T
j
) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate and heat sink just under
C
jmax
rating.
) dose not exceed T
j
the chips. Refer to the figure of chip location.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise.
R
6.
5025
R
: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]
25
R
: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]
50
25
/()
ln(B
)/(
R
11
TT
502550
)
7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
Limits
Min. Typ. Max.
rating.
jmax
Unit
mm
mm
Publication Date : December 2013
3
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULA
Note8. Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
TED TYPE
+: Convex
-: Concave
X
Y
mounting side
mounting side
Label side
mounting side
-: Concave
+: Convex
9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"φ2.6×10 or φ2.6×12 B1 tapping screw"
The length of the screw depends on thickness (t1.6~t2.0) of the PCB.
*: DC current rating is limited by power terminals.
RECOMMENDED OPERATING CONDITIONS
Symbol Item Conditions
Min. Typ. Max.
VCC (DC) Supply voltage Applied across C1-E2 - 600 850 V
V
Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 13.5 15.0 16.5 V
GEon
RG External gate resistance Per switch 0 - 5.1 Ω
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Limits
Unit
Publication Date : December 2013
Tr1/Tr2: IGBT, Di1/Di2: DIODE, Th: NTC thermistor
4
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULA
TEST CIRCUIT AND WAVEFORMS
VGE=15V
TED TYPE
52
61
1,2
IC
Short-
circuited
52
61
1,2
circuited
Short-
52
61
1,2
52
Short-
circuited
IE
61
1,2
V
Short-
circuited
0
+V
-VGE
vCE
62
32,33
42
VGE=15V
46
47
3,4
V
62
32,33
42
circuited
I
46
47
3,4
C
V
Short-
62
32,33
42
circuited
46
47
3,4
V
Short-
62
32,33
42
I
46
47
3,4
E
Tr1 Tr2 Di1 Di2
test circuit VEC test circuit
V
CEsat
i
E
1,2
52
32,33
3,4
Load
+
iC
vCE
vGE
61
62
42
46
47
-VGE
RG
GE
v
GE
0 V
V
i
CC
C
0 A
t
d(on)
～
～
90 %
0
～
～
90 %
t
iE
0 A
Q
=0.5×Irr×t
rr
IE
I
rr
t
rr
rr
0.5×I
t
rr
10%
t
r
t
d(off)
t
f
t
Switching characteristics test circuit and waveforms trr, Qrr test waveform
i
I
CM
VCC
C
i
C
V
CC
ICM
v
CE
iE
0 A
IEM
v
EC
V
CC
t
0.1×I
0
CM
0.1×VCC
t
ti
0.1×V
CC
t
i
0.02×I
CM
t0
t
i
IGBT Turn-on switching energy IGBT Turn-off switching energy FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
Publication Date : December 2013
5
t0 V
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
OUTPUT CHARACTERISTICS
(TYPICAL)
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
T =25 °C
2000
1800
1600
1400
(A)
C
1200
1000
800
600
COLLECTOR CURRENT I
400
200
0
j GE
VGE=20 V
15 V
0246810
13.5 V
12 V
11 V
10 V
9 V
(Chip)
(V)
CEsat
COLLECTOR-EMITTER
SATURATION VOLTAGE V
V =15 V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 200 400 600 800 1000 1200 1400 1600 1800 2000
Tj=150 °C
Tj=125 °C
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
(Chip)
Tj=25 °C
T =25 °C
10
j
(Chip)
G-E short-circuited
10000
(Chip)
Tj=125 °C
8
(V)
CEsat
6
IC=2000 A
IC=1000 A
1000
(A)
E
Tj=150 °C
IC=400 A
4
100
COLLECTOR-EMITTER
2
SATURATION VOLTAGE V
0
6 8 10 12 14 16 18 20
EMITTER CURRENT I
Tj=25 °C
10
0.00.51.01.52.02.53
GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)
.0
Publication Date : December 2013
6
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD
1000
100
SWITCHING CHARACTERISTICS
---------------: T
HALF-BRIDGE
(TYPICAL)
=150 °C, - - - - -: Tj=125 °C
j
t
d(off)
t
d(on)
t
f
SWITCHING CHARACTERISTICS
HALF-BRIDGE
(TYPICAL)
V
=600 V, IC=1000 A, VGE=±15 V, INDUCTIVE LOAD
CC
---------------: T
1000
(ns)
r
, t
d(on)
100
=150 °C, - - - - -: Tj=125 °C
j
t
d(off)
tf
t
d(on)
10000
1000
(ns)
f
, t
d(off)
SWITCHING TIME (ns)
t
r
10
10 100 1000
WITCHING TIME t
10
0.1 1 10 100
tr
COLLECTOR CURRENT IC (A) EXTERNAL GATE RESISTANCE RG (Ω)
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 Ω,
INDUCTIVE LOAD, PER PULSE
SWITCHING CHARACTERISTICS
100
10
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
Err
E
off
Eon
(mJ)
off
, E
on
1000
100
SWITCHING CHARACTERISTICS
VCC=600 V, IC/IE=1000 A, VGE=±15 V,
INDUCTIVE LOAD, PER PULSE
---------------: T
HALF-BRIDGE
HALF-BRIDGE
(TYPICAL)
=150 °C, - - - - -: Tj=125 °C
j
Eon
E
off
100
10000
1000
SWITCHING TIME t
(mJ)
rr
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
1
10 100 1000
COLLECTOR CURRENT IC (A)
EMITTER CURRENT I
Publication Date : December 2013
(A)
E
7
10
Err
SWITCHING ENERGY E
1
0.1 1 10 100
EXTERNAL GATE RESISTANCE R
(Ω)
G
100
REVERSE RECOVERY ENERGY E
10
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
1000
100
CAPACITANCE (nF)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
G-E short-circuited, Tj=25 °C
10
1
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD
FREE WHEELING DIODE
1000
C
ies
(A)
rr
100
C
oes
(ns), I
rr
t
C
res
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
Irr
trr
0.1
0.1 1 10 100
10
10 100 1000
COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A)
20
15
(V)
GE
10
GATE-EMITTER VOLTAGE V
GATE CHARGE CHARACTERISTICS
(TYPICAL)
VCC=600 V, IC=1000 A, Tj=25 °C
5
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
Single pulse, TC=25°C
=20 K/kW, R
R
1
th(j-c)
0.1
0.01
th(j-c)Q
th(j-c)D
=38 K/kW
0
0 500 1000 1500 2000 250 0 3000 3500
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
NORMALIZED TRANSIENT THERMAL IMPEDANCE Z
GATE CHARGE QG (nC) TIME (S)
Publication Date : December 2013
8
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULA
PERFORMANCE CURVES
NTC thermistor part
TED TYPE
TEMPERATURE CHARACTERISTICS
(TYPICAL)
100
10
1
RESISTANCE R (kΩ)
0.1
-50 -25 0 25 5 0 75 100 125
TEMPERATURE T (°C)
Publication Date : December 2013
9
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer's application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are subject
to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It
is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product
listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi
Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (www.MitsubishiElectric.com/semiconductors/).
•When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before making
a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes
no responsibility for any damage, liability or other loss resulting from the information containedherein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or systems
for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or
in part these materials.
•If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other than
the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor
for further details on these materials or the products contained therein.
© 2013 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : December 2013
10
Loading...