Mitsubishi Electric US, Inc CM1000DX-24T, CM1000DXP-24T Data Sheet
<IGBT Modules>
Publication Date : January 2017
1
CMH-11237
Ver.1.0
DX
Collector current IC .............…..................…
1 0 0
0
A
Collector-emitter voltage V
CES
..................
1 2 0
0
V
Maximum junction temperature T
vjmax
.........
1 7
5
°C
●Flat base type
●Copper base plate (Nickel-plating)
●RoHS Directive compliant
●Tin-plating pin terminals
DXP
Collector current IC .............…..................…
1 0 0
0
A
Collector-emitter voltage V
CES
..................
1 2 0
0
V
Maximum junction temperature T
vjmax
.........
1 7
5
°C
●Flat base type
●Copper base plate (Nickel-plating)
●RoHS Directive compliant
●Tin-plating pressfit terminals
dual switch (half-bridge)
●UL Recognized under UL1557, File No. E323585
APPLICATION
OPTION (Below options are available.)
●PC-TIM (Phase Change Thermal Interface Material) pre-apply
●V
CEsat
selection for parallel connection
INTERNAL CONNECTION
TERMINAL CODE
11 6 7
Th
NTC
Di1
Tr1
4 3 1
2
Tr2
9 8 10
Di2
5
1.
TH1
6.
C1
2.
TH2
7.
E2
3.
Cs1
8.
Es2
4.
G1
9.
G2
5.
Es1
10.
Cs2
11.
C2E1
CM1000DX-24T/CM1000DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
AC Motor Control, Motion/Servo Control, Power supply, etc.
<IGBT Modules>
CM1000DX-24T/CM1000DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : January 2017
2
CMH-11237
Ver.1.0
OUTLINE DRAWING
Dimension in mm
DX
TERMINAL
<IGBT Modules>
CM1000DX-24T/CM1000DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : January 2017
3
CMH-11237
Ver.1.0
OUTLINE DRAWING
Dimension in mm
DXP
TERMINAL
<IGBT Modules>
CM1000DX-24T/CM1000DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : January 2017
4
CMH-11237
Ver.1.0
OUTLINE DRAWING(Cont.)
Dimension in mm
COM. SECTION A
Tolerance otherwise specified
Division of Dimension
Tolerance
0.5
to 3
±0.2 over 3
to 6
±0.3
over 6
to 30
±0.5
over 30
to 120
±0.8 over 120
to 400
±1.2
Symbol
Item
Conditions
Rating
Unit
V
CES
Collector-emitter voltage
G-E short-circuited
1200
V
V
GES
Gate-emitter voltage
C-E short-circuited
± 20
V IC
Collector current
DC, TC=116 °C
(Note2, 4)
1000
A
I
CRM
Pulse, Repetitive
(Note3)
2000
P
tot
Total power dissipation
TC=25 °C
(Note2, 4)
5355
W
IE
(Note1)
Emitter current
DC
(Note2)
1000
A
I
ERM
(Note1)
Pulse, Repetitive
(Note3)
2000
Symbol
Item
Conditions
Rating
Unit
V
is o l
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
2500
V
T
vjmax
Maximum junction temperature
Instantaneous event (overload)
175
°C
T
Cm a x
Maximum case temperature
(Note4)
125
T
vjop
Operating junction temperature
Continuous operation (under switching)
-40 ~ +150
°C
T
st g
Storage temperature
-
-40 ~ +125
MAXIMUM RATINGS (Tvj=25 °
INVERTER PART IGBT/FWD
C, unless otherwise specified)
MODULE
<IGBT Modules>
CM1000DX-24T/CM1000DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : January 2017
5
CMH-11237
Ver.1.0
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
I
CE S
Collector-emitter cut-off current
VCE=V
CES
, G-E short-circuited
- - 1.0
mA
I
GE S
Gate-emitter leakage current
VGE=V
GES
, C-E short-circuited
- - 0.5
μA
V
GE (th)
Gate-emitter threshold voltage
IC=100 mA, VCE=10 V
5.4
6.0
6.6
V
V
CE sat
(Terminal)
IC=1000 A, VGE=15 V,
Tvj=25 °C
-
1.55
1.95
Refer to the figure of test circuit
Tvj=125 °C
-
1.70 - V
Collector-emitter saturation voltage
(Note5)
Tvj=150 °C
-
1.75 -
V
CE sat
(Chip)
IC=1000 A,
Tvj=25 °C
-
1.50
1.75
VGE=15 V,
Tvj=125 °C
-
1.70 - V
(Note5)
Tvj=150 °C
-
1.75 -
C
ies
Input capacitance
- -
242.5
C
oe s
Output capacitance
VCE=10 V, G-E short-circuited
- - 6.8
nF
C
re s
Reverse transfer capacitance
- -
3.0
QG
Gate charge
VCC=600 V, IC=1000 A, VGE=15 V
-
7.5 - μC
t
d( o n)
Turn-on delay time
VCC=600 V, IC=1000 A, VGE=±15 V,
- - 800
tr
Rise time
- - 400
ns
t
d( o ff )
Turn-off delay time
RG=2.0 Ω, Inductive load
- - 1300
tf
Fall time - -
400
VEC
(Note1)
(Terminal)
IE=1000 A, G-E short-circuited,
Tvj=25 °C
-
1.65
2.15
Refer to the figure of test circuit
Tvj=125 °C
-
1.75 - V
Emitter-collector voltage
(Note5)
Tvj=150 °C
-
1.80 -
VEC
(Note1)
(Chip)
IE=1000 A,
Tvj=25 °C
-
1.60
1.95
G-E short-circuited,
Tvj=125 °C
-
1.60 - V
(Note5)
Tvj=150 °C
-
1.60 - t
rr
(Note1)
Reverse recovery time
VCC=600 V, IE=1000 A, VGE=±15 V,
- - 500
ns
Qrr
(Note1)
Reverse recovery charge
RG=2.0 Ω, Inductive load
-
78 - μC
Eon
Turn-on switching energy per pulse
VCC=600 V, IC=IE=1000 A,
-
150.5
-
mJ
E
off
Turn-off switching energy per pulse
VGE=±15 V, RG=2.0 Ω, Tvj=150 °C,
-
128.4
- Err
(Note1)
Reverse recovery energy per pulse
Inductive load
-
69 - mJ
R
CC'+EE'
Internal lead resistance
Main terminals-chip, per switch, TC=25 °C
(Note4)
-
0.5 - mΩ
rg
Internal gate resistance
Per switch
-
0.4 - Ω
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
R25
Zero-power resistance
TC=25 °C
(Note4)
4.85
5.00
5.15
kΩ ΔR/R
Deviation of resistance
R
100
=493 Ω, TC=100 °C
(Note4)
-7.3 - +7.8
%
B
(2 5/50)
B-constant
Approximate by equation
(Note6)
-
3375 - K
P25
Power dissipation
TC=25 °C
(Note4)
- - 10
mW
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
R
th(j - c ) Q
Thermal resistance
Junction to case, per Inverter IGBT
(Note4)
- - 28
K/kW
R
th(j - c)D
Junction to case, per Inverter FWD
(Note4)
- - 49
R
th(c- s )
Contact thermal resistance
Case to heat sink,
Thermal grease applied
(Note4, 7)
-
7.1
-
K/kW
per 1 module,
PC-TIM applied
(Note4, 8)
-
1.9
-
ELECTRICAL CHARACTERISTICS (Tvj=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWD
NTC THERMISTOR PART
THERMAL RESISTANCE CHARACTERISTICS
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