Mitsubishi Electric US, Inc CM1000DUC-34SA Data Sheet

1 0 0

0

dual switch (Half-Bridge)

OUTLINE DRAWING & INTERNAL CONNECTION

Dimension in mm

INTERNAL CONNECTION

Di2

Tr2

C2E1

E2

E2 (Es2)

C1

Tr1

Di1

G2

C2 (Cs2)

E1 (Es1)

G1

C1 (Cs1)

CM1000DUC-34SA

HIGH POWER SWITCHING USE INSULATED TYPE

Collector current IC .............…..........................…

Collector-emitter voltage V Maximum junction temperature T

●Flat base Type

●Copper base plate

●RoHS Directive compliant

●Recognized under UL15 57, Fi le E 323585

APPLICATION

Wind power, Photovoltaic (Solar) power, AC Motor Control, Motion/Servo Control, Power supply, etc.

..........................… 1 7 0 0 V

CES

.................... 1 7 5 °C

jmax

A

Publication Date : February 2015

Ver. 1.2

Tolerance otherwise specified

Division of Dimension Tolerance

0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2

1

CM1000DUC-34SA

HIGH POWER SWITCHING USE

INSULATED TYPE

Symbol

Item

Conditions

Rating

Unit

V

Collector-emitter voltage

G-E short-circuited

1700

V V

GES

Gate-emitter voltage

C-E short-circuited

± 20

V

(Note2, 4)

I

Pulse, Repetitive

(Note3)

2000

P

Total power dissipation

TC=25 °C

(Note2, 4)

10000

W IE

(Note1)

DC

(Note2)

1000

ERM

(Note1)

(Note3)

V

Isolation voltage

Terminals to base plate, RMS, f=60 Hz, AC 1 min

4000

V

T

Maximum junction temperature

Instantaneous event (overload)

175

T

cmax

Maximum case temperature

(Note4)

125

T

Storage temperature

-

-40 ~ +125

Limits

Min.

Typ.

Max.

CES

I

Gate-emitter leakage current

VGE=V

GES

, C-E short-circuited

- - 10

μA

V

Gate-emitter threshold voltage

IC=100 mA, VCE=10 V

5.4

6.0

6.6

V

IC=1000 A

,

Tj=25 °C

-

1.9

2.4

Terminal=chip

Tj=150 °C

-

2.15

-

C

Input capacitance

- - 260

C

oes

Output capacitance

- - 27

QG

Gate charge

VCC=1000 V, IC=1000 A, VGE=15 V

-

4700 - nC

t

Turn-on delay time

- - 900

tr

Rise time

- - 350

tf

Fall time - -

400

IE=1000 A

(Note5)

,

Tj=25 °C

-

4.0

5.2

G-E short-circuited,

Tj=125 °C

-

2.8

-

t

(Note1)

Reverse recovery time

VCC=1000 V, IE=1000 A, VGE=±15 V,

- - 400

ns

Qrr

(Note1)

Reverse recovery charge

RG=2.0 Ω, Inductive load

-

270 - μC

Eon

Turn-on s witching energy per pulse

VCC=1000 V, IC=IE=1000 A,

-

239

-

Err

(Note1)

Reverse recovery energy per pulse

Tj=150 °C, Inductive load

-

130 - mJ

Main terminals-chip, per switch,

(Note4)

rg

Internal gate resistance

Per switch

-

0.56 - Ω

MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)

CES

IC

CRM

tot

I

isol

jmax

T

Operating junction temperature Continuous operation (under switching) -40 ~ +150

jop

stg

Collector current

Emitter current

Pulse, Repetitive

DC, TC=125 °C

1000

2000

ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)

Symbol Item Conditions

I

Collector-emitter cut-off current VCE=V

CES

GES

GE(th)

V

CE sat

ies

Collector-emitter saturation voltage

VGE=15 V, Tj=125 °C - 2.1 -

VCE=10 V, G-E short-circuited

C

Reverse transfer capacitance - - 5

res

, G-E short-circuited - - 1.0 mA

(Note5)

A

°C

Unit

V

nF

d(on)

t

Turn-off delay time

d(off)

(Note1)

VEC

Emitter-collector voltage

VCC=1000 V, IC=1000 A, VGE=±15 V,

R

=2.0 Ω, Inductive load

G

- - 1250

Terminal=chip Tj=150 °C - 2.6 -

rr

E

Turn-off switching energy per pulse VGE=±15 V, RG=2.0 Ω, - 269 -

off

R

Internal lead resistance

CC'+EE'

TC=25 °C

- 0.286 - mΩ

ns

V

mJ

Publication Date : February 2015

Ver. 1.2

2

CM1000DUC-34SA

HIGH POWER SWITCHING USE

INSULATED TYPE

Limits

Min.

Typ.

Max.

R

th(j- c)Q

Junction to case, per IGBT

(Note4)

- - 15

K/kW

(Note4)

Case to heat sink, per 1/2 module,

(Note4, 6)

Limits

Min.

Typ.

Max.

Ms

Mounting to heat sink

M 6 screw

3.5

4.0

4.5

N·m

Terminal to terminal

24 - -

Term i nal to base plate

33 - -

Term i nal to base plate

33 - - m

mass - -

1450 - g

ec

Flatness of base plate

On the centerline X, Y1, Y2

(Note7)

-50 - +100

μm

+: 凸

-: 凹

+: 凸

mounting

side

Y1

X

39 mm

Y2

-: 凹

mounting side

mounting

side

Label side

THERMAL RESISTANCE CHARACTERISTICS

Symbol Item Conditions

R

th(j- c)D

R

th(c- s )

Thermal resistance

Junction to case, per DIODE

Contact thermal resistance

Thermal grease applied

- - 24 K/kW

- 12 - K/kW

MECHANICAL CHARACTERISTICS

Symbol Item Conditions

Mt

Mounting torque

ds Creepage distance

da Clearance

Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).

2. Junction temperature (T

) should not increase beyond T

j

3. Pulse width and repetition rate should be such that the device junction temperature (T

4. Case temperature (T

) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate and heat sink just under

C

the chips. Refer to the figure of chip location. The heat sink thermal resistance should measure just under the chips.

5. Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit.

6. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).

7. Base plate (mounting side) flatness measurement points (X, Y1 and Y2) are as follows of the following figure.

Main terminals M 6 screw 3.5 4.0 4.5 N·m

Terminal to terminal 14 - -

rating.

jmax

) dose not exceed T

j

jmax

rating.

Unit

mm

8. The company name and product names herein are the trademarks and registered trademarks of the respective companies.

*. DC current rating is limited by power terminals.

Publication Date : February 2015

Ver. 1.2

3

Mitsubishi Electric US, Inc CM1000DUC-34SA Data Sheet

Specifications and Main Features

Frequently Asked Questions

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