<IGBT Modules>
1 0 0
0
dual switch (Half-Bridge)
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
INTERNAL CONNECTION
Di2
Tr2
C2E1
E2
E2
(Es2)
C1
Tr1
Di1
G2
C2
(Cs2)
E1
(Es1)
G1
C1
(Cs1)
CM1000DUC-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current IC .............…..........................…
Collector-emitter voltage V
Maximum junction temperature T
●Flat base Type
●Copper base plate
●RoHS Directive compliant
●Recognized under UL15 57, Fi le E 323585
APPLICATION
Wind power, Photovoltaic (Solar) power, AC Motor Control, Motion/Servo Control, Power supply, etc.
..........................… 1 7 0 0 V
CES
.................... 1 7 5 °C
jmax
A
Publication Date : February 2015
Ver. 1.2
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
1
<IGBT Modules>
CM1000DUC-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
Symbol
Item
Conditions
Rating
Unit
V
Collector-emitter voltage
G-E short-circuited
1700
V V
GES
Gate-emitter voltage
C-E short-circuited
± 20
V
(Note2, 4)
I
Pulse, Repetitive
(Note3)
2000
P
Total power dissipation
TC=25 °C
(Note2, 4)
10000
W IE
(Note1)
DC
(Note2)
1000
ERM
(Note1)
(Note3)
V
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
4000
V
T
Maximum junction temperature
Instantaneous event (overload)
175
T
cmax
Maximum case temperature
(Note4)
125
T
Storage temperature
-
-40 ~ +125
Limits
Min.
Typ.
Max.
CES
I
Gate-emitter leakage current
VGE=V
GES
, C-E short-circuited
- - 10
μA
V
Gate-emitter threshold voltage
IC=100 mA, VCE=10 V
5.4
6.0
6.6
V
IC=1000 A
,
Tj=25 °C
-
1.9
2.4
Terminal=chip
Tj=150 °C
-
2.15
-
C
Input capacitance
- - 260
C
oes
Output capacitance
- - 27
QG
Gate charge
VCC=1000 V, IC=1000 A, VGE=15 V
-
4700 - nC
t
Turn-on delay time
- - 900
tr
Rise time
- - 350
tf
Fall time - -
400
IE=1000 A
(Note5)
,
Tj=25 °C
-
4.0
5.2
G-E short-circuited,
Tj=125 °C
-
2.8
-
t
(Note1)
Reverse recovery time
VCC=1000 V, IE=1000 A, VGE=±15 V,
- - 400
ns
Qrr
(Note1)
Reverse recovery charge
RG=2.0 Ω, Inductive load
-
270 - μC
Eon
Turn-on s witching energy per pulse
VCC=1000 V, IC=IE=1000 A,
-
239
-
Err
(Note1)
Reverse recovery energy per pulse
Tj=150 °C, Inductive load
-
130 - mJ
Main terminals-chip, per switch,
(Note4)
rg
Internal gate resistance
Per switch
-
0.56 - Ω
MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
CES
IC
CRM
tot
I
isol
jmax
T
Operating junction temperature Continuous operation (under switching) -40 ~ +150
jop
stg
Collector current
Emitter current
Pulse, Repetitive
DC, TC=125 °C
1000
2000
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)
Symbol Item Conditions
I
Collector-emitter cut-off current VCE=V
CES
GES
GE(th)
V
CE sat
ies
Collector-emitter saturation voltage
VGE=15 V, Tj=125 °C - 2.1 -
VCE=10 V, G-E short-circuited
C
Reverse transfer capacitance - - 5
res
, G-E short-circuited - - 1.0 mA
(Note5)
A
A
°C
°C
Unit
V
nF
d(on)
t
Turn-off delay time
d(off)
(Note1)
VEC
Emitter-collector voltage
VCC=1000 V, IC=1000 A, VGE=±15 V,
R
=2.0 Ω, Inductive load
G
- - 1250
Terminal=chip Tj=150 °C - 2.6 -
rr
E
Turn-off switching energy per pulse VGE=±15 V, RG=2.0 Ω, - 269 -
off
R
Internal lead resistance
CC'+EE'
TC=25 °C
- 0.286 - mΩ
ns
V
mJ
Publication Date : February 2015
Ver. 1.2
2
<IGBT Modules>
CM1000DUC-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
Limits
Min.
Typ.
Max.
R
th(j- c)Q
Junction to case, per IGBT
(Note4)
- - 15
K/kW
(Note4)
Case to heat sink, per 1/2 module,
(Note4, 6)
Limits
Min.
Typ.
Max.
Ms
Mounting to heat sink
M 6 screw
3.5
4.0
4.5
N·m
Terminal to terminal
24 - -
Term i nal to base plate
33 - -
Term i nal to base plate
33 - - m
mass - -
1450 - g
ec
Flatness of base plate
On the centerline X, Y1, Y2
(Note7)
-50 - +100
μm
+: 凸
-: 凹
+: 凸
mounting
side
Y1
X
39 mm
39 mm
Y2
-: 凹
mounting side
mounting
side
Label side
THERMAL RESISTANCE CHARACTERISTICS
Symbol Item Conditions
R
th(j- c)D
R
th(c- s )
Thermal resistance
Junction to case, per DIODE
Contact thermal resistance
Thermal grease applied
- - 24 K/kW
- 12 - K/kW
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Mt
Mounting torque
ds Creepage distance
da Clearance
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).
2. Junction temperature (T
) should not increase beyond T
j
3. Pulse width and repetition rate should be such that the device junction temperature (T
4. Case temperature (T
) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate and heat sink just under
C
the chips. Refer to the figure of chip location.
The heat sink thermal resistance should measure just under the chips.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit.
6. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
7. Base plate (mounting side) flatness measurement points (X, Y1 and Y2) are as follows of the following figure.
Main terminals M 6 screw 3.5 4.0 4.5 N·m
Terminal to terminal 14 - -
rating.
jmax
) dose not exceed T
j
jmax
rating.
Unit
Unit
mm
mm
8. The company name and product names herein are the trademarks and registered trademarks of the respective companies.
*. DC current rating is limited by power terminals.
Publication Date : February 2015
Ver. 1.2
3
<IGBT Modules>
CM1000DUC-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
Limits
Min.
Typ.
Max.
VCC
(DC) Supply voltage
Applied across C1-E2
-
1000
1200
V
RG
External gate resistance
Per switch
2.0 - 6.0
Ω
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr1/Tr2: IGBT, Di1/Di2: DIODE
RECOMMENDED OPERATING CONDITIONS
Symbol Item Conditions
V
Gate (-emitter drive) volt age Applied across G1-Es1/G2-Es2 13.5 15.0 16.5 V
GEon
Unit
Publication Date : February 2015
Ver. 1.2
4
<IGBT Modules>
CM1000DUC-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
VCC
-VGE
+VGE
-VGE
+
vGE
0
iE
iC
C1
E2
C2E1
G1
Es1
G2
Es2
Cs1
Load
RG
Cs2
vCE
～
t
tf
tr
t
d(on)
iC
10%
90 %
90 %
vGE
～
～
～
0 V
0 A
0
t
d(off)
t
Irr
Qrr=0.5×Irr×trr
0.5×Irr
t
trr
iE
0 A
IE
0.1×ICM
ICM
VCC
vCE
iC
t
0
ti
0.1×VCC
0.1×VCC
VCC
ICM
vCE
iC t 0
0.02×ICM
ti
IEM
vEC
iE
t
0 V
ti
t
VCC
0 A
IGBT Turn-on switching energy
IGBT Turn-off switching energy
DIODE Reverse recovery energy
Cs1
V
Short-
circuited
C1
C2E1
E2
IC
G1
Es1
G2
Es2
VGE=15V
Cs2
Cs1
V
Short-
circuited
C1
C2E1
E2
IC
G1
Es1
G1
Es2
VGE=15V
Cs2
Cs1
V
Short-
circuited
C1
C1E2
E2
I
E
G1
Es1
G2
Es2
Cs2
Short-
circuited
Cs1
V
Short-
circuited
C1
C2E1
E2
IE
G1
Es1
G2
Es2
Cs2
Short-
circuited
Tr1
Tr2
Di1
Di2
VEC test circuit
TEST CIRCUIT AND WAVEFORMS
Switching characteristics test circuit and waveforms trr, Qrr test waveform
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
TEST CIRCUIT
V
test circuit
CEsat
Publication Date : February 2015
Ver. 1.2
5
<IGBT Modules>
CM1000DUC-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
COLLECTOR-EMITTER SATURATION
(TYPICAL)
Tj=25 °C
(Chip)
VGE=15 V
(Chip)
COLLECTOR CURRENT I
C
(A)
SATURATION VOLTAGE V
CEsat
(V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
(TYPICAL)
FREE WHEELING DIODE
(TYPICAL)
(Chip)
(Chip)
SATURATION VOLTAGE V
CEsat
(V)
EMITTER CURRENT I
E
(A)
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
0
500
1000
1500
2000
0 2 4 6 8 10
0
1
2
3
4
0 500 1000 1500 2000
0
2
4
6
8
10
6 8 10 12 14 16 18 20
10
100
1000
10000
0 1 2 3 4 5 6
IC=2000 A
IC=1000 A
IC=600 A
PERFORMANCE CURVES
VGE=20 V
(TYPICAL)
15 V
11 V
10 V
9 V
8 V
VOLTAGE CHARACTERISTICS
Tj=125 °C
Tj=150 °C
Tj=25 °C
COLLECTOR-EMITTER
VOLTAGE CHARACTERISTICS
Tj=25 °C
COLLECTOR-EMITTER
FORWARD CHARACTERISTICS
G-E short-circuited
Tj=125 °C
Tj=150 °C
Tj=25 °C
Publication Date : February 2015
Ver. 1.2
6
<IGBT Modules>
CM1000DUC-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
(TYPICAL)
HALF-BRIDGE
(TYPICAL)
VCC=1000 V, VGE=±15 V, RG=2.0 Ω, INDUCTIVE LOAD
VCC=1000 V, IC=1000 A, VGE=±15 V, I NDUCT IV E LOAD
SWITCHING TIME (ns)
SWITCHING TIME (ns)
SWITCHING TIME t
d(off)
, t
f
(ns)
COLLECTOR CURRENT IC (A)
EXTERNAL GATE RESISTANCE RG (Ω)
HALF-BRIDGE
(TYPICAL)
HALF-BRIDGE
(TYPICAL)
VCC=1000 V, VGE=±15 V, RG=2.0 Ω,
VCC=1000 V, IC/IE=1000 A, VGE=±15 V,
SWITCHING ENERGY (mJ)
SWITCHING ENERGY E
(mJ)
REVERSE RECOVERY ENERGY (mJ)
COLLECTOR CURRENT IC (A)
EXTERNAL GATE RESISTANCE RG (Ω)
10
100
1000
10000
10 100 1000
100
1000
10000
1 10
10
100
1000
10 100 1000
10
100
1000
1 10
PERFORMANCE CURVES
SWITCHING CHARACTERISTICS
---------------: Tj=150 °C, - - - - -: Tj=125 °C
t
d(off)
t
f
t
d(on)
t
r
SWITCHING CHARACTERISTICS
---------------: Tj=150 °C, - - - - -: Tj=125 °C
t
d(off)
t
d(on)
t
f
t
r
SWITCHING CHARACTERISTICS
INDUCTIVE LOAD, PER PULSE
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
E
off
E
on
off
Err
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
SWITCHING CHARACTERISTICS
INDUCTIVE LOAD, PER PULSE
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
Eon
E
off
Err
EMITTER CURRENT IE (A)
Publication Date : February 2015
Ver. 1.2
7
<IGBT Modules>
CM1000DUC-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
FREE WHEELING DIODE
(TYPICAL)
VCC=1000 V, VGE=±15 V, RG=2.0 Ω, INDUCTIVE LOAD
CAPACITANCE (nF)
I
rr
(A), t
rr
(ns)
COLLECTOR-EMITTER VOLTAGE VCE (V)
EMITTER CURRENT IE (A)
GATE CHARGE CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
Single pulse, TC=25°C
GATE-EMITTER VOLTAGE V
GE
(V)
NORMALIZED TRANSIENT THERMAL IMPEDANCE Z
th(j- c)
GATE CHARGE QG (nC)
TIME (S)
0.1
1
10
100
1000
0.1 1 10 100
10
100
1000
10 100 1000
0
5
10
15
20
0 2000 4000 6000 8000
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
C
res
PERFORMANCE CURVES
(TYPICAL)
G-E short-circuited, Tj=25 °C
REVERSE RECOVERY CHARACTERISTICS
---------------: Tj=150 °C, - - - - -: Tj=125 °C
C
ies
I
rr
t
rr
C
oes
(TYPICAL)
VCC=1000 V, IC=1000 A, Tj=25 °C
R
th(j-c)Q
(MAXIMUM)
=15 K/kW, R
th(j-c)D
=24 K/kW
Publication Date : February 2015
Ver. 1.2
8
<IGBT Modules>
CM1000DUC-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
occur with them. Trouble with
Keep safety first in your cir c uit des igns!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products b etter and
more reliable, but there is always the possibility that trouble may
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Publication Date : February 2015
Ver. 1.2
9
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