Mitsubishi Electric Corporation RM900DB-90S Data Sheet

SECURITY
CODE

Spec. NAME

Customer’s
Std. Spec.

Prepared by K.Kurachi

Checked by

Approved by H.Yamaguchi

DATE 10-Apr.-2008

MITSUBISHI ELECTRIC CORPORATION

R
E
V

HIGH VOLTAGE DIODE MODULE

1. Type Number RM900DB-90S

2. Structure Flat base type (Insulated package, Cu base plate)

3. Application & Customer High power converters & Inverters for traction application

4. Outline See Fig. 1

5. Related Specifications

HIGH VOLTAGE DIODE MODULE

Fig. 1 - Outline drawing

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6. Maximum Ratings

MITSUBISHI ELECTRIC CORPORATION

Item Symbol Conditions Ratings Unit

6.1 Repetitive peak reverse voltage V

6.2 Non-repetitive peak reverse
voltage

6.3 Reverse DC voltage V

6.4 DC forward current IF T

6.5 Surge forward current I

6.6 Surge current load integral I2t

6.7 Isolation voltage V

T

RRM

T

V

RSM

R(DC)

FSM

= 25 °C 4500 V

j

= 25 °C 4500 V

j

Tj = 25 °C 3000 V

= 25 °C 900 A

c

T

= 25 °C start, tw = 8.3 ms

j

Half sign wave

T

= 25 °C start, tw = 8.3 ms

j

6400 A

Half sign wave

iso

Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.

6000 V

170 kA

6.8 Junction temperature Tj — −40 ~ +150 °C

6.9 Storage temperature T

— −40 ~ +125 °C

stg

6.10 Operating temperature Top — −40 ~ +125 °C

V

≤ 3000 V

6.11 Maximum reverse recovery
instantaneous power

—

R

di/dt ≤ 2600A/µs, T

[See Fig.1, Fig.2, 12-5]

= 125 °C

j

900 kW

7. Electrical Characteristics

2

s

Item Symbol Conditions

7.1 Repetitive reverse current I

RRM

7.2 Forward voltage VFM

VRM = V

IF = 900 A

RRM

(Note 1)

Tj = 25 °C

Tj = 125 °C

Tj = 25 °C

Tj = 125 °C

Limits

Min. Typ. Max.

— — 8

— 8 20

— 4.00 —

— 3.60 —

Unit

mA

V

7.3 Reverse recovery time trr — 0.9 — µs

V

= 2250 V, IF = 900 A

7.4 Reverse recovery current Irr — 900 — A

7.5 Reverse recovery charge Qrr — 650 — µC

7.6 Reverse recovery energy E

Note 1: It doesn't include the voltage drop by Internal lead resistance.

rec

R

di/dt = −1800 A/µs

= 125 °C

T

j

[See Fig.1,Fig.2]

— 0.70 — J/P

HIGH VOLTAGE DIODE MODULE

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8. Thermal Characteristics

MITSUBISHI ELECTRIC CORPORATION

Item Symbol Conditions

8.1 Thermal resistance R

8.2 Contact thermal resistance R

Note 2: Thermal conductivity is 1W/mK with a thickness of 100µm.

th(j-c)R

th(c-f)

Junction to case
(per 1/2 module)

Case to fin
Conductive grease applied
(per 1/2 module)

(Note 2)

Limits

Min. Typ. Max.

Unit

— — 20.0 K/kW

— 16.0 — K/kW

9. Mechanical Characteristics

Item Symbol Conditions

9.1 Mounting torque —

9.2 Mounting torque —

Main terminal screw : M8

Mounting screw : M6

9.3 Mass — — — 1.5 — kg

9.4 Comparative tracking index CTI — 600 — — —

Limits

Min. Typ. Max.

Unit

7.0 — 13.0 N·m

3.0 — 6.0 N·m

9.5 Clearance — — 19.5 — — mm

9.6 Creepage distance — — 32 — — mm

9.7 Internal inductance L

9.8 Internal lead resistance R

— — 35 — nH

A-K(int)

A-K(int)

Tc = 25 °C — 0.25 — mΩ

10. Shipping Inspection Report Item

Static characteristics : I

Dynamic characteristics : t

Note 3: One shipping inspection report with the above item values is submitted when modules are delivered. The test

conditions are defined in bracket.

RRM

[7.3], Qrr [7.5]

rr

(note 3)

[7.1], VFM [7.2]

HIGH VOLTAGE DIODE MODULE

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MITSUBISHI ELECTRIC CORPORATION

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∫

11. Test Circuit & Definition of Switching Characteristics

S1

L

Rg

L

K

LOAD

DUT: diode

L

S2

= 150 nH

C = 2 mF VCC

Diode part: reverse recovery

IF

di/dt

0

0

di

Irr

trr

dt

10%V

CS = 200 uF

A

Fig. 1 – Switching test circuit

= –

= –

t6

if dt

0

t6

if•vr dt

t5

Qrr

V

R

10%IF

50%Irr

90%Irr

R

Erec

t5

0

t6

Fig. 2 – Definitions of reverse recovery charge & energy

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