Mitsubishi Electric Corporation RM1200DB-66S Data Sheet

SECURITY
CODE

Spec. NAME

Customer’s
Std. Spec.

Prepared by K.Kurachi

Checked by

Approved by I.Umezaki

DATE 8-May-2008

MITSUBISHI ELECTRIC CORPORATION

R
E
V

HIGH VOLTAGE DIODE MODULE

1. Type Number RM1200DB-66S

2. Structure Flat base type (Insulated package, Cu base plate)

3. Application & Customer High power converters & Inverters for traction application

4. Outline See Fig. 1

5. Related Specifications

HIGH VOLTAGE DIODE MODULE

Fig. 1 - Outline drawing

HVM-2019

(HV-SETSU)

PAGE

1 / 10

6. Maximum Ratings

MITSUBISHI ELECTRIC CORPORATION

Item Symbol Conditions Ratings Unit

6.1 Repetitive peak reverse voltage V

6.2 Non-repetitive peak reverse
voltage

6.3 Reverse DC voltage V

6.4 DC forward current IF T

6.5 Surge forward current I

6.6 Surge current load integral I2t

6.7 Isolation voltage V

T

RRM

T

V

RSM

R(DC)

FSM

= 25 °C 3300 V

j

= 25 °C 3300 V

j

Tj = 25 °C 2200 V

= 25 °C 1200 A

c

T

= 25 °C start, tw = 8.3 ms

j

Half sign wave

T

= 25 °C start, tw = 8.3 ms

j

9600 A

Half sign wave

iso

Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.

6000 V

384 kA

6.8 Junction temperature Tj — −40 ~ +150 °C

6.9 Storage temperature T

— −40 ~ +125 °C

stg

6.10 Operating temperature Top — −40 ~ +125 °C

V

≤ 2200 V

6.11 Maximum reverse recovery
instantaneous power

—

R

di/dt ≤ 4800 A/µs, T

[See Fig.1, Fig.2, 12-5]

= 125 °C

j

2100 kW

7. Electrical Characteristics

2

s

Item Symbol Conditions

7.1 Repetitive reverse current I

RRM

7.2 Forward voltage VFM

VRM = V

IF = 1200 A

RRM

(Note 1)

Tj = 25 °C

Tj = 125 °C

Tj = 25 °C

Tj = 125 °C

Limits

Min. Typ. Max.

— — 5

— 3 30

— 2.80 —

— 2.70 —

Unit

mA

V

7.3 Reverse recovery time trr — 0.75 — µs

V

= 1650 V, IF = 1200 A

7.4 Reverse recovery current Irr — 1600 — A

7.5 Reverse recovery charge Qrr — 850 — µC

7.6 Reverse recovery energy E

Note 1: It doesn't include the voltage drop by Internal lead resistance.

rec

HIGH VOLTAGE DIODE MODULE

R

di/dt = −3700 A/µs

= 125 °C

T

j

HVM-2019

[See Fig.1,Fig.2]

— 0.75 — J/P

(HV-SETSU)

PAGE

2 / 10

8. Thermal Characteristics

MITSUBISHI ELECTRIC CORPORATION

Item Symbol Conditions

8.1 Thermal resistance R

8.2 Contact thermal resistance R

Note 2: Thermal conductivity is 1W/mK with a thickness of 100µm.

th(j-c)R

th(c-f)

Junction to case
(per 1/2 module)

Case to fin
Conductive grease applied
(per 1/2 module)

(Note 2)

Limits

Min. Typ. Max.

Unit

— — 18.0 K/kW

— 16.0 — K/kW

9. Mechanical Characteristics

Item Symbol Conditions

9.1 Mounting torque —

9.2 Mounting torque —

Main terminal screw : M8

Mounting screw : M6

9.3 Mass — — — 1.5 — kg

9.4 Comparative tracking index CTI — 600 — — —

Limits

Min. Typ. Max.

Unit

7.0 — 13.0 N·m

3.0 — 6.0 N·m

9.5 Clearance — — 19.5 — — mm

9.6 Creepage distance — — 32 — — mm

9.7 Internal inductance L

9.8 Internal lead resistance R

— — 35 — nH

A-K(int)

A-K(int)

Tc = 25 °C — 0.25 — mΩ

10. Shipping Inspection Report Item

Static characteristics : I

Dynamic characteristics : t

Note 3: One shipping inspection report with the above item values is submitted when modules are delivered. The test

conditions are defined in bracket.

RRM

[7.3], Qrr [7.5]

rr

(note 3)

[7.1], VFM [7.2]

HIGH VOLTAGE DIODE MODULE

HVM-2019

(HV-SETSU)

PAGE

3 / 10