Mitsubishi Electric Corporation PSS30S71F6 Data Sheet

PSS30S71F6

With temperature output function

V

(1)

V

(7)

V

(13)

W(34)

VP(12)

WP(18)

UP(6)

VP1(4)

UN(21)

VN(22)

WN(23)

FO(24)

VN1(28)

VNC(27)

NW(31)

CIN(26)

NU(33)

NV(32)

V(35)

U(36)

P(37)

VOT(20)

V

(3)

V

(9)

V

(15)

VP1(10)

VP1(16)

CFO(25)

DIPIPM

HVIC1

HVIC2

HVIC3

HO

HO

HO

W

OUT

V

OUT

U

OUT

IGBT1

Di1

IGBT2

Di2

IGBT3

Di3

IGBT4

Di4

IGBT5

Di5

IGBT6

Di6

LVIC

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PSS30S71F6

TRANSFER MOLDING TYPE
INSULATED TYPE

OUTLINE

MAIN FUNCTION AND RATINGS

 3 phase DC/AC inverter
 600V / 30A (CSTBT)
 N-side IGBT open emitter
 Built-in bootstrap diodes with current limiting resistor

APPLICATION

 AC 100~240Vrms(DC voltage:400V or below) class

low power motor control

TYPE NAME

INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS

● For P-side : Drive circuit, High voltage high-speed level shifting, Control supply under -voltage (UV) protection

● For N-side : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC),

● Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply)

● Temperature output : Outputting LVIC temperature by analog signal

● Input interface : 3, 5V line, Schmitt trigger receiver circuit (High Active)

● UL Recognized : UL1557 File E80276

INTERNAL CIRCUIT

UFS
UFB

VFS
VFB

WFS
WFB

Publication Date : February 2014

1

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MAXIMUM RATINGS
INVERTER PART

Symbol Parameter Condition

Ratings

Unit

V

CC

Supply voltage

Applied between P-NU,NV,NW

450

V

V

CC(surge)

Supply voltage (surge)

Applied between P-NU,NV,NW

500

V

V

CES

Collector-emitter voltage

600

V

PC

Collector dissipation

TC= 25°C, per 1 chip

90.9

W

Tj

Junction temperature

-20~+150

°C

CONTROL (PROTECTION) PART

VD

Control supply voltage

Applied between

VP1-VNC, VN1-VNC

20

V

VDB

Control supply voltage

Applied between

V

UFB-VUFS

, V

VFB-VVFS

,V

WFB-VWFS

20

V

VIN

Input voltage

Applied between

UP, VP, WP, UN, VN, WN-VNC

-0.5~VD+0.5

V

VFO

Fault output supply voltage

Applied between

FO-VNC

-0.5~VD+0.5

V

IFO

Fault output current

Sink current at FO terminal

1

mA

TOTAL SYSTEM

Self protection supply voltage limit
(Short circuit protection capability)

VD = 13.5~16.5V, Inverter Part
Tj = 125°C, non-repetitive, less than 2μs

TC

Module case operation temperature

Measurement point of Tc is provided in Fig.1

-20~+100

°C

T

stg

Storage temperature

-40~+125

°C

60Hz, Sinusoidal, AC 1min, between connected all pins
and heat sink plate

THERMAL RESISTANCE

Limits

Min.

Typ.

Max.

R

th(j-c)Q

Junction to case thermal
resistance (No te 1)

Inverter IGBT part (per 1/6 module)

- - 1.1

K/W

R

th(j-c)F

Inverter FWDi part (per 1/6 module)

- - 2.8

K/W

Control terminals

Tc point

IGBT chip position

FWDi chip position

Power terminals

Heat sink side

Groove

17.7mm

18mm

PSS30S71F6

TRANSFER MOLDING TYPE
INSULATED TYPE

(Tj = 25°C, unless otherwise noted)

±IC Each IGBT collector current TC= 25°C 30 A
±ICP Each IGBT collector current (peak) TC= 25°C, less than 1ms 60 A

Symbol Parameter Condition Ratings Unit

VSC Current sensing input voltage Applied between CIN-VNC -0.5~VD+0.5 V

Symbol Parameter Condition Ratings Unit

V

CC(PROT)

400 V

V

Isol ation vol tage

iso

Fig. 1: TC MEASUREMEN T POINT

2500 V

rms

Symbol Parameter Condition

Note 1: Grease with good t hermal c onductivit y and long -term endurance should be applied evenly with about +100μm~+200μm on the contacting surface of

DIPIPM and heat sink. The contacting therm al res istanc e bet ween D IPIP M case an d heat sink Rth( c-f) is d eterm ined by th e thick ness a nd the t herm al
conductivity of the applied grease. For reference, Rth(c-f) is about 0.3K/W (per 1/6 module, grease thickness: 20μm, thermal conductivity: 1.0W/m•k).

Unit

Publication Date : February 2014

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ELECTRICAL CHARACTERISTICS
INVERTER PART

Min.

Typ.

Max.

IC= 30A, Tj= 25°C

-

1.40

1.90

V

IC= 30A, Tj= 125°C

-

1.50

2.00

VEC

FWDi forward voltage

VIN= 0V, -IC= 30A

-

1.50

2.00

V

ton

0.95

1.55

2.15

μs

t

C(off)

- 0.40

0.60

μs

trr - 0.30 - μs

Tj= 25°C

- - 1

Tj= 125°C

- - 10

CONTROL (PROTECTION) PART

Limits

Min.

Typ.

Max.

VD=15V, VIN=0V

- - 6.00

VD=15V, VIN=5V

- - 6.00

V

SC(ref)

Short circuit trip level

VD = 15V

(Note 2)

0.45

0.48

0.51

V

UV

DBt

Trip level

10.0 - 12.0

V

UV

DBr

Reset level

10.5 - 12.5

V

UVDt

Trip level

10.3 - 12.5

V

UVDr

Reset level

10.8 - 13.0

V

LVIC Te mperature=90°C

V

FOL

VSC = 1V, IFO = 1mA

- - 0.95

V

tFO

Fault output pulse width

CFO=22nF

1.6

2.4 - ms

IIN

Input current

VIN = 5V

0.70

1.00

1.50

mA

V

th(on)

ON threshold voltage

-

2.10

2.60

V

th(off)

OFF threshold voltage

0.80

1.30

-

ON/OFF threshold
hysteresis voltage

VF

Bootstrap Di forward voltage

IF=10mA including voltage drop by limiting resistor

0.5

0.9

1.3

V

Built-in limiting resistance

0

100

200

300

400

500

600

700

800

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

I

F

[mA]

VF [V]

0

5

10

15

20

25

30

35

40

45

50

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

I

F

[mA]

VF [V]

PSS30S71F6

TRANSFER MOLDING TYPE
INSULATED TYPE

(Tj = 25°C, unless otherwise noted)

Symbol Parameter Condition

V

CE(sat)

t

C(on)

t

- 1.75 2.35 μs

off

Collector-emitter saturation
voltage

- 0.50 0.80 μs
Switching times

VD=VDB = 15V, VIN= 5V

V

= 300V, VD= VDB= 15V

CC

= 30A, Tj= 125°C, VIN= 0↔5V

I

C

Limits

Inductive Load (upper-lower arm)

I

CES

Collector-emitter cut-off
current

VCE=V

CES

Symbol Parameter Condition

ID

Circuit current

IDB

Total of VP1-VNC, VN1-VNC
Each part of V

V

- V

VFB

VFS

, V

WFB

UFB

- V

- V

WFS

UFS

V

= 15V, VIN=0V - - 0.55

,

D=VDB

VD=VDB= 15V, VIN=5V - - 0.55

P-side Control supply
under-voltage protection(UV)

N-side Control supply

T

≤125°C

j

under-voltage protection(UV)

VOT Temperature Output P ul l down R=5kΩ (Note 3)
V

FOH

Fault output voltage

VSC = 0V, FO terminal pulled up to 5V by 10kΩ 4.9 - - V

2.51 2.64 2.76 V

Unit

mA

Unit

mA

V

th(hys)

R

Note 2 : SC protection works only for N-side IGBT. Please select the external shunt resistance such that the SC trip-level is less than 2.0 times of the current rating.

3 : DIPIPM don't shutdown IGBTs and output fault signal automat ic al l y whe n t em per atu re ri ses e xces si vely. When tempera tur e e xc ee ds the protective level that

user defined, controller (MCU) should stop the DIPIPM. Temperature of LVIC vs. VOT output characteristics is described in Fig. 3.

4 : Fault si gn al Fo o utp uts when SC or UV protection works. Fo pulse width is different for each pro tecti on modes. At SC failure, Fo pulse width is a fixed width

which is specifie d by the capacitor connected to C
state. (But minimum Fo puls e width is the specified time by C

5 : The characteristics of bootstrap Di is described in Fig.2.

Fig. 2 Characteristics of bootstrap Di VF-IF curve (@Ta=25°C) including voltage drop by limiting resistor (Right chart is enlarged chart.)

Publication Date : February 2014

(Note 4)

Applied between UP, VP, WP, UN, VN, WN-VNC

0.35 0.80 -

(Note 5)

Included in bootstrap Di 16 20 24 Ω

terminal. (C

FO

=9.1 x 10-6 x tFO [F]), but at UV failur e, Fo outpu ts continuously until r eco v eri ng fr om U V

FO

.)

FO

3

V

< Dual-In-Line Package Intelligent Power Module >

2.51

2.64

2.76

1.5

1.7

1.9

2.1

2.3

2.5

2.7

2.9

3.1

3.3

3.5

55 65 75 85 95 105 115

VOT output (V)_

LVIC temperature (°C)

Typ.

Max.

Min.

Ref

VOT

Temperature
Signal

VNC

Inside LVIC
of DIPIPM

5kΩ

PSS30S71F6

TRANSFER MOLDING TYPE
INSULATED TYPE

Fig. 3 Temperature of LVIC vs. VOT output characteristics

Fig. 4 VOT output circuit

(1) It is recommended to insert 5kΩ (5.1kΩ is recommended) pull down resistor for getting linear output charact eristics at low temperature

below room temperature. When the pull down resistor is inserted between V
calculated approximately by V
using V

OT

(2) In the case of using V

temperature rises excessively. If system uses low voltage controller, it is recommended to insert a clamp Di between control supply of
the controller and V

(3) In the case of not using V

Refer the application note for this product about the usage of V

and VNC(control GND), the extra circuit current, which is

output voltage divided by pull down resistance, flows as LVIC circuit current continuously. In the case of

OT

OT

MCU

for detecting high temperature over room temperature only, it is unnecessary to insert the pull down resistor.

with low voltage controller like 3.3V MCU, VOT output might exceed control supply voltage 3.3V when

OT

output for preventing over voltage destruction.

OT

, leave VOT output NC (No Connection).

OT

.

OT

Publication Date : February 2014

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