Mitsubishi Electric Corporation PSS05S92F6-AG, PSS05S92E6-AG Data Sheet

PSS05S92F6-AG

With temperature output function

PSS05S92E6-AG

With OT protection function

V

(2)

V

(3)

V

(4)

W(21)

VP(6)

WP(7)

UP(5)

VP1(8)

IGBT1

IGBT2

IGBT3

Di1

Di2

Di3

VNC(9)

UN(10)

VN(11)

WN(12)

FO(14)

VN1(13)

VNC(16)

NW(18)

CIN(15)

IGBT4

IGBT5

IGBT6

Di4

Di5

Di6

NU(20)

NV(19)

LVIC

HVIC

V(22)

U(23)

P(24)

VOT(17)

·Built-in temperature output type: VOT

·

E

< Dual-In-Line Package Intelligent Power Module >

PSS05S92F6-AG
PSS05S92E6-AG

TRANSFER MOLDING TYPE
INSULATED TYPE

OUTLINE

MAIN FUNCTION AND RATINGS

 3 phase DC/AC inverter
 600V / 5A (CSTBT)
 N-side IGBT open emitter
 Built-in bootstrap diodes with current limiting resistor

APPLICATION

 AC 100~240Vrms(DC voltage:400V or below) class

low power motor control

TYPE NAME

INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS

● For P-side : Drive circuit, High voltage high-speed level shift ing , C ontr ol supp ly under-voltage (UV) protection

● For N-side :

Drive circuit, Control supply under-voltage prote cti on (UV), Short circuit protection (SC),

Over temperature protection (OT, PSS05S92E6-AG only)

● Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply) and OT fault

● Temperature output : Outputting LVIC temperature by analog signal (PSS05S92F6-AG only)

● Input interface : 3, 5V line, Schmitt trigger receiver circuit (High Active)

● UL Recognized : UL1557 File E323585

INTERNAL CIRCUIT

UFB

VFB

WFB

(PSS**S92F6-AG)

Built-in OT type: NC (No Connection)

(PSS**S92

Publication Date : March 2014

6-AG)

1

< Dual-In-Line Package Intelligent Power Module >

INVERTER PART

Symbol Parameter Condition

Ratings

Unit

V

CC

Supply voltage

Applied between P-NU,NV,NW

450

V

±ICP

Each IGBT collector current (peak)

T

C

= 25°C, less than 1ms

10

A

PC

Collector dissipation

TC= 25°C, per 1 chip

20.0

W

Tj

Junction temperature

(Note 2)

-30~+150

°C

Note1: Pulse width and period are limited due to junction temperature.

junction temperature should be limited to Tj(Ave)≤125°C (@Tc≤100°C).

CONTROL (PROTECTION) PART

Symbol Parameter Condition

Ratings

Unit

VD

Control supply voltage

Applied between

VP1-VNC, VN1-VNC

20

V

V

U

VFO

Fault output supply voltage

Applied between

FO-VNC

-0.5~VD+0.5

V

IFO

Fault output current

Sink current at FO terminal

1

mA

VSC

Current sensing input voltage

Applied between CIN-VNC

-0.5~VD+0.5

V

TOTAL SYSTEM

Symbol Parameter Condition

Ratings

Unit

Self protection supply voltage limit
(Short circuit protection capability)

VD = 13.5~16.5V, Inverter Part
Tj = 125°C, non-repetitive, less than 2μs

60Hz, Sinusoidal, AC 1min, between connected all pins
and heat sink plate

THERMAL RESISTANCE

Limits

Min.

Typ.

Max.

R

th(j-c)Q

Junction to case thermal
resistance (No te 3)

Inverter IGBT part (per 1/6 module)

- - 5.0

K/W

R

th(j-c)F

Inverter FWDi part (per 1/6 module)

- - 5.7

K/W

Control terminals

DIPIPM

Tc point

IGBT chip position

Heat sink side

11.6mm

Power terminals

PSS05S92F6-AG, PSS05S92E6-AG

TRANSFER MOLDING TYPE
INSULATED TYPE

MAXIMUM RATINGS (T

= 25°C, unless otherwise noted)

j

V

CC(surge)

V

CES

Supply voltage (surge) Applied between P-NU,NV,NW 500 V

Collector-emitter voltage 600 V

±IC Each IGBT collector current TC= 25°C (Note 1) 5 A

Note2: Th e maximum j unction tempe rature rat ing of built-i n power chips is 150°C(@Tc≤100°C).However, to ensure safe operation of DIPIPM, the average

VDB Control supply voltage Applied between
VIN Input voltage Applied between

V

CC(PROT)

-U, V

-V, V

UFB

VFB

, VP, WP, UN, VN, WN-VNC -0.5~VD+0.5 V

P

-W 20 V

WFB

400 V

TC Module case operation temperature Measurement point of Tc is provided in Fig.1 -30~+100 °C
T

Storage temperature -40~+125 °C

stg

V

Isol ation vol tage

iso

1500 V

Fig. 1: TC MEASUREMEN T POINT

3mm

rms

Symbol Parameter Condition

Note 3: Grease with good t hermal c onductivit y and long -term endur ance sho uld be applied evenly with about +100μm~+200μm on the contacting surface of

DIPIPM and heat sink. The contacting therm al res istanc e bet ween D IPIP M case an d heat sink Rth( c-f) is d eterm ined by th e thick ness a nd the t herm al
conductivity of the applied grease. For reference, Rth(c-f) is about 0.3K/W (per 1/6 module, grease thickness: 20μm, thermal conductivity: 1.0W/m•K).

Publication Date : March 2014

Unit

2

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ELECTRICAL CHARACTERISTICS
INVERTER PART

Min.

Typ.

Max.

IC= 5A, Tj= 25°C

-

1.60

1.95

IC= 5A, Tj= 125°C

-

1.80

2.15

IC=0.5A, Tj= 25°C

-

0.90

1.10

VEC

FWDi forward voltage

VIN= 0V, -IC= 5A

-

2.30

2.75

V

t

off

- 1.15

1.60

μs

t

C(off)

- 0.15

0.30

μs trr - 0.30 - μs

Tj= 25°C

- - 1

Tj= 125°C

- - 10

CONTROL (PROTECTION) PART

Limits

Min.

Typ.

Max.

VD=15V, VIN=0V

- - 2.80

VD=VDB=15V, VIN=5V

- - 0.10

V

SC(ref)

Short circuit trip level

VD = 15V

0.455

0.480

0.505

V

UV

DBt

Trip level

7.0

10.0

12.0

V

UV

DBr

Reset level

7.0

10.0

12.0

V

UVDt

Trip level

10.3 - 12.5

V

LVIC Temperature=90°C

LVIC Temperature=25°C

0.88

1.13

1.39

V

OTt

VD = 15V

Trip level

100

120

140

°C

OTrh

Detect LVIC temperature

Hysteresis of trip-reset

-

10 - °C

V

FOH

VSC = 0V, FO terminal pulled up to 5V by 10kΩ

4.9 - -

V

IIN

Input current

VIN = 5V

0.70

1.00

1.50

mA

V

th(on)

ON threshold voltage

-

2.10

2.60

V

th(off)

OFF threshold voltage

0.80

1.30

-

ON/OFF threshold
hysteresis voltage

R

Built-in limiting resistance

Included in bootstrap Di

80

100

120

Ω

0

20

40

60

80

100

120

140

160

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

VF [V]

I

F

[mA]

0

5

10

15

20

25

30

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

VF [V]

I

F

[mA]

PSS05S92F6-AG, PSS05S92E6-AG

TRANSFER MOLDING TYPE
INSULATED TYPE

(Tj = 25°C, unless otherwise noted)

Symbol Parameter Condition

V

ton
t

C(on)

CE(sat)

Collector-emitter saturation
voltage

VD=VDB = 15V, VIN= 5V

0.65 1.05 1.45 μs

- 0.35 0.60 μs
Switching times

V

= 300V, VD= VDB= 15V

CC

= 5A, Tj= 125°C, VIN= 0↔5V

I

C

Limits

Unit

Inductive Load (upper-lower arm)

I

CES

Symbol Parameter Condition

ID

IDB

Collector-emitter cut-off
current

Circuit current

VCE=V

CES

Total of VP1-VNC, VN1-VNC

WFB

-W

UFB

-U,

Each part of V
V

-V, V

VFB

VD=15V, VIN=5V - - 2.80

= 15V, VIN=0V - - 0.10

V

D=VDB

(Note 4)

mA

Unit

mA

P-side Control supply
under-voltage protection(UV)

N-side Control supply

UVDr Reset level 10.8 - 13.0 V
VOT

under-voltage protection(UV)
Temperature Output

(PSS**S92F6-AG)

T

≤125°C

j

Pull down R=5kΩ

(Note 5)

2.63 2.77 2.91 V

Over temperature protection

(OT, PSS**S92E6-AG) (Note6)

V

V

FOL

Fault output voltage

VSC = 1V, IFO = 1mA - - 0.95 V

tFO Fault output pulse width

V

th(hys)

VF Bootstrap Di forward voltage

Note 4 : SC protection works only for N-side IGBT. Please select the external shunt resistance such that the SC trip-level is less than 1.7 times of the current rating.

5 : DIPIPM don't s hu tdo wn IGB Ts and output fault sign al a utom a ti cally when temperature rises e xces sively. When temperature exceeds the protective level t hat

user defined, controller (MCU) should stop the DIPIPM. Temperature of LVIC vs. VOT output characteristics is described in Fig. 3.

6 : When the LVIC temperature excee ds OT trip temper ature level( OT

loosely, don't reuse that DIPIPM. (There is a possibility that junction temperature of power chips exceeded maximum Tj(150°C).

7 : F ault signal Fo out puts when SC, UV or OT protection work s. Fo pul se width is di fferent fo r each pr otectio n modes. At SC failure, Fo pulse width is a fixed

width (=minimum 20μs), but at UV or OT fail ur e, Fo out pu ts continuously until recovering from UV or OT state. (But minimum Fo pulse width is 20μs.)

8 : The characteristics of bootstrap Di is described in Fig.2.

Fig. 2 Characteristics of bootstrap Di VF-IF curve (@Ta=25°C) including voltage drop by limiting resistor (Right chart is enlarged chart.)

Publication Date : March 2014

Applied between UP, VP, WP, UN, VN, WN-VNC

IF=10mA including voltage drop by limiting resistor

), OT protection works and Fo outputs. In that case if the heat sink dropped off or fixed

t

3

(Note 7)

(Note 8)

20 - - μs

V

0.35 0.65 -

1.1 1.7 2.3 V

< Dual-In-Line Package Intelligent Power Module >

2.77

2.63

2.91

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

3.2

3.4

3.6

3.8

4.0

60 70 80 90 100 110 120

LVIC temperature (°C)

V

OT

output (V)_

Typ.

Max.

Min.

Ref

VOT

Temperature
Signal

VNC

Inside LVIC
of DIPIPM

5kΩ

PSS05S92F6-AG, PSS05S92E6-AG

TRANSFER MOLDING TYPE
INSULATED TYPE

Fig. 3 Temperature of LVIC vs. VOT output characteristics

Fig. 4 VOT output circuit

(1) It is recommended to insert 5kΩ (5.1kΩ is recommended) pull down resistor for getting linear output charact eristics at low temperature

below room temperature. When the pull down resistor is inserted between V
calculated approximately by V
using V

(2) In the case of using V

temperature rises excessively. If system uses low voltage controller, it is recommended to insert a clamp Di between control supply of
the controller and V

(3) In the case of not using V

Refer the application note for Super Mini DIPIPM Ver.6 series about the usage of V

and VNC(control GND), the extra circuit current, which is

output voltage divided by pull down resistance, flows as LVIC circuit current continuously. In the case of

for detecting high temperature over room temperature on ly, it is unnecessary to insert the pull down resistor.

OT

OT

OT

with low voltage controller like 3.3V MCU, VOT output might exceed control supply voltage 3.3V when

OT

output for preventing over voltage destruction.

, leave VOT output NC (No Connection).

OT

OT

.

OT

MCU

Publication Date : March 2014

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