Mitsubishi Electric Corporation PSM05S93E5-A Data Sheet

PSM05S93E5-A

With over temperature protection

V

(2)

V

(3)

V

(4)

W(21)

VP(6)

WP(7)

UP(5)

VP1(8)

VNC(9)

UN(10)

VN(11)

WN(12)

FO(14)

VN1(13)

VNC(16)

NW(18)

CIN(15)

NU(20)

NV(19)

V(22)

U(23)

P(24)

LVIC

MOSFET1

MOSFET2

MOSFET3

HVIC

MOSFET4

MOSFET5

MOSFET6

< Dual-In-Line Package Intelligent Power Module >

PSM05S93E5-A

TRANSFER MOLDING TYPE
INSULATED TYPE

OUTLINE

MAIN FUNCTION AND RATINGS

 3 phase DC/AC inverter
 500V / 5A (MOSFET)
 N-side MOSFET open source
 Built-in bootstrap diodes with current limiting resistor

APPLICATION

 AC 100~240Vrms(DC voltage:400V or below) class

low power motor control

TYPE NAME

INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS

● For P-side : Drive circuit, High voltage high-speed level shif ting , Control supply under-voltage (UV) protection

● For N-side :

Drive circuit, Control supply under-voltage prote cti on (UV) , Short circuit protection (SC),

Over temperature protection (OT)

● Fault signaling : Corresponding to SC fault (N-side MOSFET), UV fault (N-side supply) and OT fault

● Input interface : 3, 5V line, Schmitt trigger receiver circuit (High Active)

●UL Recognized : UL1557 File E323585

INTERNAL CIRCUIT

UFB

VFB

WFB

Publication Date : October 2013

1

< Dual-In-Line Package Intelligent Power Module >

INVERTER PART

Symbol Parameter Condition

Ratings

Unit

V

DD

Supply voltage

Applied between P-NU,NV,NW

400

V

±IDP

Each MOSFET drain current (peak)

TC= 25°C, less than 1ms

10

A

PD

Drain dissipation

TC= 25°C, per 1 chip

35.7

W

Tch

Channel temperature

(Note 1)

-20~+150

°C

Note1: Th e maximum junc tion tempe rature ratin g of built-in power chips is 150°C(@Tc≤100°C).However, to ensure safe operation of DIPIPM, the average

channel temperature should be limited to Tch(Ave)≤125°C (@Tc≤100°C).

CONTROL (PROTECTION) PART

Symbol Parameter Condition

Ratings

Unit

VD

Control supply voltage

Applied between

VP1-VNC, VN1-VNC

20

V

V

U

VFO

Fault output supply voltage

Applied between

FO-VNC

-0.5~VD+0.5

V

IFO

Fault output current

Sink current at FO terminal

1

mA

VSC

Current sensing input voltage

Applied between CIN-VNC

-0.5~VD+0.5

V

TOTAL SYSTEM

Symbol Parameter Condition

Ratings

Unit

Self protection supply voltage limit
(Short circuit protection capability)

VD = 13.5~16.5V, Inverter Part
Tch = 125°C, non-repetitive, less than 2μs

60Hz, Sinusoidal, AC 1min, between connected all pins
and heat sink plate

THERMAL RESISTANCE

Limits

Min.

Typ.

Max.

R

th(ch-c)Q

Junction to case thermal resistance (Note2)

1/6 module

- - 2.8

K/W

Control terminals

DIPIPM

Tc point

IGBT chip position

Heat sink side

11.6mm

Power terminals

PSM05S93E5-A

TRANSFER MOLDING TYPE
INSULATED TYPE

MAXIMUM RATINGS (T

= 25°C, unless otherwise noted)

ch

V

DD(surge)

V

DSS

±ID Each MOSFET drain current TC= 25°C 5 A

VDB Control supply voltage Applied between
VIN Input voltage Applied between

V

DD(PROT)

TC Module case operation temperature Measurement point of Tc is provided in Fig.1 -20~+100 °C
T

Storage temperature -40~+125 °C

stg

V

Isol ation vol tage

iso

Fig. 1: TC MEASUREMEN T POINT

Supply voltage (surge) Applied between P-NU,NV,NW 450 V

Drain-source voltage 500 V

-U, V

-V, V

UFB

VFB

, VP, WP-VPC, UN, VN, WN-VNC -0.5~VD+0.5 V

P

-W 20 V

WFB

400 V

1500 V

3mm

rms

Symbol Parameter Condition

Note 2: Grease with goo d thermal c onductivi ty and long -term endurance should be applied evenly with about +100μm~+200μm on the contacting surface of

DIPIPM and heat sink. The contacting therm al res istanc e bet ween D IPIP M case an d heat sink Rth( c-f) is d eterm ined by th e thick ness a nd the t herm al
conductivity of the applied grease. For reference, Rth(c-f) is about 0.3K/W (per 1/6 module, grease thickness: 20μm, thermal conductivity: 1.0W /m•k).

Publication Date : Oct ober 2013

2

Unit

< Dual-In-Line Package Intelligent Power Module >

ELECTRICAL CHARACTERISTICS
INVERTER PART

Min.

Typ.

Max.

Tch= 25°C

-

0.60

0.80

Tch= 125°C

-

1.30

1.70

VSD

Source-drain voltage drop

VIN= 0V, -ID= 5A

-

0.90

1.30

V

ton

0.65

1.15

1.65

μs

t

C(off)

- 0.10

0.20

μs

trr - 0.25 - μs

Tch= 25°C

- - 1

Tch= 125°C

- - 10

CONTROL (PROTECTION) PART

Limits

Min.

Typ.

Max.

VD=15V, VIN=0V

- - 2.80

VD=15V, VIN=5V

- - 2.80

V

SC(ref)

Short circuit trip level

VD = 15V

(Note 3)

0.43

0.48

0.53

V

UV

DBt

Trip level

7.0

10.0

12.0

V

UV

DBr

Reset level

7.0

10.0

12.0

V

UVDt

Trip level

10.3 - 12.5

V

UVDr

Reset level

10.8 - 13.0

V

V

FOH

VSC = 0V, FO terminal pulled up to 5V by 10kΩ

4.9 - - V V

FOL

VSC = 1V, IFO = 1mA

- - 0.95

V

tFO

Fault output pulse width

20 - -

μs

IIN

Input current

VIN = 5V

0.70

1.00

1.50

mA

V

th(off)

OFF threshold voltage

0.80

1.30

-

ON/OFF threshold
hysteresis voltage

VF

Bootstrap Di forward voltage

IF=10mA including voltage drop by limiting resistor

1.1

1.7

2.3

V

Built-in limiting resistance

0

20

40

60

80

100

120

140

160

0 1 2 3 4 5 6 7

8 9 10 11 12 13

14 15

V

F

[V]

I

F

[mA]

0

5

10

15

20

25

30

0.0 0.5

1.0 1.5 2.0 2.5 3.0 3.5

VF [V]

I

F

[mA]

PSM05S93E5-A

TRANSFER MOLDING TYPE
INSULATED TYPE

(Tch = 25°C, unless otherwise noted)

Symbol Parameter Condition

V

DS(on)

t

C(on)

t

- 1.00 1.50 μs

off

Drain-source on-state
resistance

- 0.35 0.55 μs
Switching times

VD=VDB = 15V, VIN= 5V, ID= 5A

V

= 300V, VD= VDB= 15V

DD

= 5A, Tch= 125°C, VIN= 0↔5V

I

D

Limits

Unit

Ω

Inductive Load (upper-lower arm)

I

DSS

Symbol Parameter Condition

ID

IDB

Drain-source cut-off
current

Circuit current

VDS=V

DSS

Total of VP1-VNC, VN1-VNC

WFB

-W

UFB

-U,

Each part of V
V

-V, V

VFB

V

= 15V, VIN=0V - - 0.10

D=VDB

VD=VDB= 15V, VIN=5V - - 0.10

mA

Unit

mA

P-side Control supply
under-voltage protection(UV)

N-side Control supply

Tch ≤125°C

under-voltage protection(UV)

OTt
OTrh Detect LVIC temperature Hysteresis of trip-reset - 10 - °C

Over temperature protection

(OT) (Note4)

V

= 15V Trip level 100 120 140 °C

D

Fault output voltage

(Note 5)

V

ON threshold voltage

th(on)

Applied between U

V

th(hys)

R

Note 3 : SC protection works for N-side only. Please select the external shunt resistance such that the SC trip-level is less than 1.7 times of the current rating.

4 : When the LVIC temperature e xceeds OT trip tem peratu re level (OT

loosely, don't reuse that DIPIPM. (There is a possibility that channel temperature of power chips exceeded maximum Tch(150°C).

5 : Fa ult signal Fo outpu ts when SC, UV or OT protection work s. Fo pulse width is different for eac h prot ectio n modes. At SC failure, Fo pul se width is a fi xed

width (=minimum 20μs), but at UV or OT fail ur e, Fo out pu ts continuously until recovering from UV or OT state. (But minimum Fo pulse width is 20μs.)

6 : The characteristics of bootstrap Di is described in Fig.2.

Included in bootstrap Di 80 100 120 Ω

, VP, WP, UN, VN, WN-VNC

P

(Note 6)

), OT protection works and Fo outputs. In that case if the he at sink dropped off or fixed

t

- 2.10 2.60

0.35 0.65 -

Fig. 2 Characteristics of bootstrap Di VF-IF curve (@Ta=25°C) including voltage drop by limiting resistor (Right chart is enlarged chart.)

V

Publication Date : Oct ober 2013

3

< Dual-In-Line Package Intelligent Power Module >

MECHANICAL CHARACTERISTICS AND RATINGS

Limits

Min.

Typ.

Max.

Control terminal: Load 4.9N
Power terminal: Load 9.8N

Control terminal: Load 2.45N
90deg. bend

Heat-sink flatness

-50 - 100

μm

RECOMMENDED OPERATION CONDITIONS

Limits

VDB

Control supply voltage

Applied between V

UFB

-U, V

VFB

-V, V

WFB

-W

13.0

15.0

18.5

V

ΔVD, ΔVDB

Control supply variation

-1 - +1

V/μs

t

dead

Arm shoot-through blocking time

For each input signal

1.0 - -

μs

f

PWM

PWM input frequency

TC ≤ 100°C, Tch ≤ 125°C

- - 20

kHz

VNC

VNC variation

Between VNC-NU, NV, NW (including surge)

-5.0 - +5.0

Tch

Channel temperature

-20 - +125

°C

4.6mm

-

+
Heat sink side

Heat sink side

Measurement position

17.5mm
+

-

PSM05S93E5-A

TRANSFER MOLDING TYPE
INSULATED TYPE

Parameter Condition

Mounting torque Mounting screw : M3 (Note 8) Recommended 0.69N·m 0.59 0.69 0.78 N·m
Terminal pulling strength

Terminal bending strength

Power terminal: Load 4.9N

EIAJ-ED-4701 10 - - s

EIAJ-ED-4701 2 - - times

Weight - 8.5 - g

(Note 9)

Note 8: Plain washers (ISO 7089~7094) are recommended.
Note 9: Measurement point of heat sink flatness

Unit

Symbol Parameter Condition

Min. Typ. Max.
VCC Supply voltage Applied between P-NU, NV, NW 0 300 400 V
VD Control supply voltage Applied between VP1-VNC, VN1-VNC 13.5 15.0 16.5 V

= 300V, VD = 15V, P.F = 0.8,

V

DD

IO Allowable r.m.s. current

PWIN(on)
PWIN(off) 0.7 - -

Note 10: Allowable r.m.s. current depends on the actual application conditions.

11: DIPIPM might not make response if the input signal pulse width is less than PWIN(on), PWIN(off).

Minimum input pulse width

Sinusoidal PWM
T

≤ 100°C, Tch ≤ 125°C (Note10)

C

= 5kHz - - 2.5

f

PWM

f

= 15kHz - - 2.0

PWM

(Note 11)

0.7 - -

Unit

Arms

μs

V

Publication Date : Oct ober 2013

4