Mitsubishi TM55RZ-24, TM55RZ-2H, TM55EZ-2H, TM55EZ-24 Datasheet

TM55RZ/EZ-24,-2H
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
IT (AV) Average on-state current ............ 55A
I
F (AV) Average forward current ............ 55A
V
RRM Repetitive peak reverse voltage
.... 1200/1600V
V
DRM Repetitive peak off-state voltage
.... 1200/1600V
MIX DOUBLE ARMS
Insulated Type
UL Recognized Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
93.5
16.5
80
23 23
LABEL
3–M5
2–φ6.5
13
K1 G1
Tab#110, t=0.5
6.5
(RZ)
26
(EZ)
9
30
21
CR
1K2
A
A1
CR
1
K
K
1K2
SR
SR
A2
A
K1 G1
2
K1 G1
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Symbol
RRM
V
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Parameter
24
1200
1350
960
1200
1350
960
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
Voltage class
2H
1600
1700
1280
1600
1700
1280
Unit
V
V
V
V
V
V
for fusing
Parameter
Conditions
Single-phase, half-wave 180° conduction, T
One half cycle at 60Hz, peak value
Value for one cycle of surge current
D=1/2VDRM, IG=1.0A, Tj=125°C
V
Charged part to case
C=81°C
Symbol
IT (RMS), IF (RMS)
I
T (AV)
, I
F (AV)
ITSM, IFSM
2
t
I
di/dt
GM
P
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
RMS current
Average current
Surge (non-repetitive) current
2
t
I
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Main terminal screw M5
Mounting torque
Mounting screw M6
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
IDRM
VTM, VFM
dv/dt
GT
V
VGD
IGT
Rth (j-c)
Rth (c-f)
Repetitive peak reverse current
Repetitive peak off-state current
Forward voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Parameter
Test conditions
j=125°C, VRRM applied
T
j=125°C, VDRM applied
T
j=125°C, ITM=IFM=165A, instantaneous meas.
T
j=125°C, VD=2/3VDRM
T Tj=25°C, VD=6V, RL=2
j=125°C, VD=1/2VDRM
T Tj=25°C, VD=6V, RL=2
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal and case
Min.
500
0.25
15
10
Ratings
86
55
1100
5.0 × 10
100
5.0
0.5
10
5.0
2.0
–40~125
–40~125
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
Limits
Typ.
Unit
A
A
A
3
2
s
A
A/µs
W
W
V
V
A
°C °C
V
N·m
kg·cm
N·m
kg·cm
g
Max.
10
10
1.5
2.0
100
0.5
0.2
Unit
mA
mA
V
V/µs
V
V
mA
°C/W °C/W
M
Feb.1999
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