Mitsubishi TM55DZ-M, TM55DZ-H, TM55CZ-M, TM55CZ-H Datasheet

TM55DZ/CZ-M,-H

MITSUBISHI THYRISTOR MODULES

TM55DZ/CZ-M,-H

MEDIUM POWER GENERAL USE

INSULATED TYPE

• IT (AV) Average on-state current ............ 55A

• V

RRM Repetitive peak reverse voltage

........ 400/800V

• V

DRM Repetitive peak off-state voltage

........ 400/800V

• DOUBLE ARMS

• Insulated Type

• UL Recognized
Yellow Card No. E80276 (N)

File No. E80271

APPLICATION

DC motor control, NC equipment, AC motor control, Contactless switches,
E lectric furnace temperature control, Light dimmers

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

93.5

80

17.5 20 20

LABEL

K2 G2

K1 G1

3–M5

2–φ6.5

12.5

Tab#110,
t=0.5

9

21

6.5

26

30

(DZ)

(CZ)

K2G

2

CR

1

1K2

A

A

1

CR

K

1

1

K1K

2

CR

A

2

K1G

2

CR

1

K2G

2

A

2

K1G

1

2

Feb.1999

ABSOLUTE MAXIMUM RATINGS

Symbol

RRM

V

VRSM

VR (DC)

VDRM

VDSM

VD (DC)

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

DC reverse voltage

Repetitive peak off-state voltage

Non-repetitive peak off-state voltage

DC off-state voltage

Parameter

M

400

480

320

400

480

320

Voltage class

MITSUBISHI THYRISTOR MODULES

TM55DZ/CZ-M,-H

MEDIUM POWER GENERAL USE

INSULATED TYPE

H

800

960

640

800

960

640

Unit

V

V

V

V

V

V

Symbol

T (RMS)

I

IT (AV)

ITSM

2

t

I

di/dt

GM

P

PG (AV)

VFGM

VRGM

IFGM

Tj

Tstg

Viso

RMS on-state current

Average on-state current

Surge (non-repetitive) on-state current

2

t

I

Critical rate of rise of on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate forward voltage

Peak gate reverse voltage

Peak gate forward current

Junction temperature

Storage temperature

Isolation voltage

—

Mounting torque

—

Weight

Parameter

for fusing

ELECTRICAL CHARACTERISTICS

Symbol

I

RRM

IDRM

VTM

dv/dt

GT

V

VGD

IGT

Rth (j-c)

Rth (c-f)

Repetitive peak reverse current

Repetitive peak off-state current

On-state voltage

Critical rate of rise of off-state voltage

Gate trigger voltage

Gate non-trigger voltage

Gate trigger current

Thermal resistance

Contact thermal resistance

—

Insulation resistance

Parameter

Conditions

Single-phase, half-wave 180° conduction, T

C=86°C

One half cycle at 60Hz, peak value

Value for one cycle of surge current

D=1/2VDRM, IG=1.0A, Tj=125°C

V

Charged part to case

Main terminal screw M5

Mounting screw M6

Typical value

Test conditions

j=125°C, VRRM applied

T

j=125°C, VDRM applied

T

j=125°C, ITM=165A, instantaneous meas.

T

j=125°C, VD=2/3VDRM

T
Tj=25°C, VD=6V, RL=2Ω

j=125°C, VD=1/2VDRM

T
Tj=25°C, VD=6V, RL=2Ω

Junction to case (per 1/2 module)

Case to fin, conductive grease applied (per 1/2 module)

Measured with a 500V megohmmeter between main terminal
and case

Min.

—

—

—

500

—

0.25

15

—

—

10

Ratings

86

55

1100

5.0 × 10

100

5.0

0.5

10

5.0

2.0

–40~+125

–40~+125

2500

1.47~1.96

15~20

1.96~2.94

20~30

160

Limits

Typ.

—

—

—

—

—

—

—

—

—

—

Unit

A

A

A

3

2

s

A

A/µs

W

W

V

V

A

°C
°C

V

N·m

kg·cm

N·m

kg·cm

g

Max.

10

10

1.35

—

3.0

—

100

0.5

0.2

—

Unit

mA

mA

V

V/µs

V

V

mA

°C/W
°C/W

MΩ

Feb.1999