Mitsubishi TM400HA-M, TM400HA-2H, TM400HA-H, TM400HA-24 Datasheet

Feb.1999
MITSUBISHI THYRISTOR MODULES
TM400HA-M,-H,-24,-2H
MEDIUM POWER GENERAL USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
TM400HA-M,-H,-24,-2H
IT (AV) Average on-state current .......... 400A
V
RRM Repetitive peak reverse voltage
........ 400/800/1200/1600V
V
DRM Repetitive peak off-state voltage
........ 400/800/1200/1600V
ONE ARM
Insulated Type
UL Recognized Yellow Card No. E80276 (N)
File No. E80271
LABEL
22
46
2–φ5.5
35
65
80
2
17
2–M8
Tab#110, t=0.5
730
9
64
65
A
K
K
G
AK
G
K
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM400HA-M,-H,-24,-2H
MEDIUM POWER GENERAL USE
INSULATED TYPE
Symbol
V
RRM
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A
2
s
A/µs
W
W
V
V
A
°C °C
V
N·m
kg·cm
N·m
kg·cm
g
Conditions
Single-phase, half-wave 180° conduction, T
C=66°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D=1/2VDRM, IG=1.0A, Tj=125°C
Charged part to case
Main terminal screw M8
Mounting screw M5
Typical value
Ratings
620
400
8000
2.7 × 10
5
100
10
3.0
10
5.0
4.0
–40~+125
–40~+125
2500
8.83~10.8
90~110
1.47~1.96
15~20
450
Symbol
I
T (RMS)
IT (AV)
ITSM
I
2
t
di/dt
P
GM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I
2
t
for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/µs
V
V
mA
°C/W °C/W
M
Limits
Symbol
I
RRM
IDRM
VTM
dv/dt
V
GT
VGD
IGT
Rth (j-c)
Rth (c-f)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
T
j=125°C, VRRM applied
T
j=125°C, VDRM applied
T
j=125°C, ITM=1200A, instantaneous meas.
T
j=125°C, VD=2/3VDRM
Tj=25°C, VD=6V, RL=2
T
j=125°C, VD=1/2VDRM
Tj=25°C, VD=6V, RL=2
Junction to case, per 1/2 module
Case to fin, conductive grease applied, per 1/2 module
Measured with a 500V megohmmeter between main terminal and case
Min.
500
0.25
15
10
Typ.
Max.
40
40
1.4
3.0
100
0.1
0.08
M
400
480
320
400
480
320
H
800
960
640
800
960
640
24
1200
1350
960
1200
1350
960
2H
1600
1700
1280
1600
1700
1280
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