Mitsubishi TM20RA-M, TM20RA-H Datasheet

TM20RA-M,-H

MITSUBISHI THYRISTOR MODULES

TM20RA-M,-H

MEDIUM POWER GENERAL USE

INSULATED TYPE

• IT (AV) Average on-state current ............ 20A

• I

F (AV) Average forward current ............ 20A

• V

RRM Repetitive peak reverse voltage

........ 400/800V

• V

DRM Repetitive peak off-state voltage

........ 400/800V

• MIX DOUBLE ARMS

• Insulated Type

• UL Recognized
Yellow Card No. E80276 (N)

File No. E80271

APPLICATION

DC motor control, NC equipment, Inverters, Servo drives, contactless switches,
electric furnace temperature control, light dimmers

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

A

1

K

1

G

1

Tab#110, t=0.5

8.5

60

47.6

15

36

A

2

K

2

4–M4

2–φ5.5

13

18

32

A

1

A

2

CR

1

G

K

SR

1

K

2

11

LABEL

2.0

16.5

30

24.5

Feb.1999

ABSOLUTE MAXIMUM RATINGS

Symbol

RRM

V

VRSM

VR (DC)

VDRM

VDSM

VD (DC)

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

DC reverse voltage

Repetitive peak off-state voltage

Non-repetitive peak off-state voltage

DC off-state voltage

Parameter

M

400

480

320

400

480

320

Voltage class

MITSUBISHI THYRISTOR MODULES

TM20RA-M,-H

MEDIUM POWER GENERAL USE

INSULATED TYPE

H

800

960

640

800

960

640

Unit

V

V

V

V

V

V

for fusing

Parameter

Conditions

Single-phase, half-wave 180° conduction, T

One half cycle at 60Hz, peak value

Value for one cycle of surge current

D=1/2VDRM, IG=0.5A, Tj=125°C

V

Charged part to case

C=87°C

Symbol

IT (RMS), IF (RMS)

I

T (AV)

, I

F (AV)

ITSM, IFSM

2

t

I

di/dt

GM

P

PG (AV)

VFGM

VRGM

IFGM

Tj

Tstg

Viso

RMS current

Average current

Surge (non-repetitive) current

2

t

I

Critical rate of rise of on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate forward voltage

Peak gate reverse voltage

Peak gate forward current

Junction temperature

Storage temperature

Isolation voltage

Main terminal screw M4

—

Mounting torque

Mounting screw M5

—

Weight

Typical value

ELECTRICAL CHARACTERISTICS

Symbol

I

RRM

IDRM

VTM, VFM

dv/dt

GT

V

VGD

IGT

Rth (j-c)

Rth (c-f)

Repetitive peak reverse current

Repetitive peak off-state current

Foward voltage

Critical rate of rise of off-state voltage

Gate trigger voltage

Gate non-trigger voltage

Gate trigger current

Thermal resistance

Contact thermal resistance

—

Insulation resistance

Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.

Parameter

Test conditions

j=125°C, VRRM applied

T

j=125°C, VDRM applied

T

j=125°C, ITM=IFM=60A, instantaneous meas.

T

j=125°C, VD=2/3VDRM

T
Tj=25°C, VD=6V, RL=2Ω

j=125°C, VD=1/2VDRM

T
Tj=25°C, VD=6V, RL=2Ω

Junction to case (per 1/2 module)

Case to fin, conductive grease applied (per 1/2 module)

Measured with a 500V megohmmeter between main terminal
and case

Min.

—

—

—

500

—

0.25

10

—

—

10

Ratings

30

20

400

6.7 × 10

100

5.0

0.5

10

5.0

2.0

–40~125

–40~125

2500

0.98~1.47

10~15

1.47~2.45

15~25

80

Limits

Typ.

—

—

—

—

—

—

—

—

—

—

Unit

A

A

A

2

2

s

A

A/µs

W

W

V

V

A

°C
°C

V

N·m

kg·cm

N·m

kg·cm

g

Max.

4.0

4.0

1.8

—

3.0

—

50

1.0

0.25

—

Unit

mA

mA

V

V/µs

V

V

mA

°C/W
°C/W

MΩ

Feb.1999