TM200DZ/CZ/PZ-M,-H,-24,-2H
(DZ Type)
MITSUBISHI THYRISTOR MODULES
TM200DZ/CZ/PZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
• IT (AV) Average on-state current .......... 200A
• V
RRM Repetitive peak reverse voltage
........ 400/800/1200/1600V
• V
DRM Repetitive peak off-state voltage
........ 400/800/1200/1600V
• DOUBLE ARMS
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
Electric furnace temperature control, Light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
39
(DZ)
(CZ)
(PZ)
A1
A
A1
CR1
K1
K2
CR2
CR1
1
CR1
K1 K2
K1
CR2
K2
CR2
A2
A2
A2
3–φ6.5
206
4–M8
A1 K1 A2K2
18 16 18 16
30
68.5
32
150
LABEL
30
68.5
K2
G2
K1
G1
40
Tab#110,
t=0.5
9
7
23
32
K2
G2
K1
G1
K2
G2
K1
G1
K2
G2
K1
G1
(DZ Type)
(Bold line is connective bar.)
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Symbol
RRM
V
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Parameter
M
400
480
320
400
480
320
MITSUBISHI THYRISTOR MODULES
TM200DZ/CZ/PZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
H
800
960
640
800
960
640
Voltage class
24
1200
1350
960
1200
1350
960
2H
1600
1700
1280
1600
1700
1280
Unit
V
V
V
V
V
V
Symbol
T (RMS)
I
IT (AV)
ITSM
2
t
I
di/dt
GM
P
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
2
t
I
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
for fusing
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
IDRM
VTM
dv/dt
GT
V
VGD
IGT
Rth (j-c)
Rth (c-f)
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
—
Insulation resistance
Parameter
Conditions
Single-phase, half-wave 180° conduction, T
C=64°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
D=1/2VDRM, IG=1.0A, Tj=125°C
V
Charged part to case
Main terminal screw M8
Mounting screw M6
Typical value
Test conditions
j=125°C, VRRM applied
T
j=125°C, VDRM applied
T
j=125°C, ITM=600A, instantaneous meas.
T
j=125°C, VD=2/3VDRM
T
Tj=25°C, VD=6V, RL=2Ω
j=125°C, VD=1/2VDRM
T
Tj=25°C, VD=6V, RL=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
500
—
0.25
15
—
—
10
Ratings
310
200
4000
6.7 × 10
100
10
3.0
10
5.0
4.0
–40~+125
–40~+125
2500
8.83~10.8
90~110
1.96~3.92
20~40
300
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
Unit
A
A
A
4
2
s
A
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Max.
30
30
1.35
—
3.0
—
100
0.2
0.1
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/W
°C/W
MΩ
Feb.1999