Mitsubishi TM10T3B-M, TM10T3B-H Datasheet

TM10T3B-M,-H

MITSUBISHI THYRISTOR MODULES

TM10T3B-M,-H

MEDIUM POWER GENERAL USE

INSULATED TYPE

• IO DC output current ...................... 20A

• V

RRM Repetitive peak reverse voltage

........ 400/800V

• V

DRM Repetitive peak off-state voltage

........ 400/800V

• 3 Phase Mix Bridge

• Insulated Type

• UL Recognized
Yellow Card No. E80276 (N)

File No. E80271

APPLICATION

DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

80

2–φ4.5

22

7.5

31

GR GS GT

P

K

R

S

T

N

34

Tab#110, t=0.5

7

2

18.5
6

22

R

P

Tab#250, t=0.8

K
GT
GS
GR

T

17 17

LABEL

S

N

68

Feb.1999

ABSOLUTE MAXIMUM RATINGS

Symbol

RRM

V

VRSM

VR (DC)

VDRM

VDSM

VD (DC)

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

DC reverse voltage

Repetitive peak off-state voltage

Non-repetitive peak off-state voltage

DC off-state voltage

Parameter

M

400

480

320

400

480

320

Voltage class

MITSUBISHI THYRISTOR MODULES

TM10T3B-M,-H

MEDIUM POWER GENERAL USE

INSULATED TYPE

H

800

960

640

800

960

640

Unit

V

V

V

V

V

V

Symbol

O

I

ITSM, IFSM

2

t

I

di/dt

GM

P

PG (AV)

VFGM

VRGM

IFGM

Tj

Tstg

Viso

—

—

Parameter

DC output current

Surge (non-repetitive) current

2

t

I

for fusing

Critical rate of rise of on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate forward voltage

Peak gate reverse voltage

Peak gate forward current

Junction temperature

Storage temperature

Isolation voltage

Mounting torque

Weight

3-phase fullwave rectified, TC=79°C

One half cycle at 60Hz, peak value

Value for one cycle of surge current

D=1/2VDRM, IG=0.5A, Tj=125°C

V

Charged part to case

Mounting screw M4

Typical value

Conditions

ELECTRICAL CHARACTERISTICS

Symbol

I

RRM

IDRM

VTM, VFM

dv/dt

GT

V

VGD

IGT

Rth (j-c)

Rth (c-f)

Repetitive peak reverse current

Repetitive peak off-state current

Forward voltage

Critical rate of rise of off-state voltage

Gate trigger voltage

Gate non-trigger voltage

Gate trigger current

Thermal resistance

Contact thermal resistance

—

Insulation resistance

Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.

Parameter

Test conditions

j=125°C, VRRM applied

T

j=125°C, VDRM applied

T

j=125°C, ITM=IFM=20A, instantaneous meas.

T

j=125°C, VD=2/3VDRM

T
Tj=25°C, VD=6V, RL=2Ω

j=125°C, VD=1/2VDRM

T
Tj=25°C, VD=6V, RL=2Ω

Junction to case (per 1/6 module)

Case to fin, Conductive grease applied (per 1/6 module)

Measured with a 500V megohmmeter between main terminal
and case

Min.

—

—

—

500

—

0.25

10

—

—

10

Ratings

20

200

1.7 × 10

50

5.0

0.5

10

5.0

2.0

–40~125

–40~125

2500

0.98~1.47

10~15

130

Limits

Typ.

—

—

—

—

—

—

—

—

—

—

Unit

A

A

2

2

s

A

A/µs

W

W

V

V

A

°C
°C

V

N·m

kg·cm

g

Max.

4.0

4.0

1.3

—

2.0

—

50

4.5

0.6

—

Unit

mA

mA

V

V/µs

V

V

mA

°C/W
°C/W

MΩ

Feb.1999