MITSUBISHI FAST RECOVERY DIODE MODULES
RM50HG-12S
HIGH SPEED SWITCHING USE
NON-INSULA TED TYPE
FB
D
G - DIA.
L
2
1
Outline Drawing and Circuit Diagram
Dimension Inches Millimeters
A 1.102±0.02 26.0±0.5
B 0.81 Max. 20.5 Max.
C 0.79 Min. 20.0 Min.
D 0.24±0.008 6.0±0.2
E 0.214±0.012 5.45±0.3
F 0.20±0.012 5.0±0.3
G 0.214±0.012 Dia. Dia. 3.2±0.2
3
E
E
1
3
A
K
J
M
C
2
4
Dimension Inches Millimeters
H 0.12±0.012 3.0±0.3
J 0.10±0.012 2.5±0.3
K 0.10 2.5
L 0.08±0.012 2.0±0.3
M 0.04 ±0.008 1.0±0.2
N 0.02±0.008 0.6±0.2
Description:
Mitsubishi Super Fast Recovery
Diodes are designed for use in
applications requiring fast
H
switching.
Features:
u Non-Isolated Package
N
u Planar Chips
u trr = 200ns Max.
Applications:
u Snubber Circuits
Ordering Information:
Example: Select the complete part
number from the table below -i.e.
RM50HG-12S is a 600V,
50 Ampere Super Fast Recovery
Single Diode Module.
Current Rating Voltage
Type Amperes Volts (x 50)
RM 50 12
Sep.1998
MITSUBISHI FAST RECOVERY DIODE MODULES
RM50HG-12S
HIGH SPEED SWITCHING USE
NON-INSULA TED TYPE
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings Symbol RM50HG-12S Units
Peak Reverse Blocking Voltage (Repetitive) V
Peak Reverse Blocking Voltage (Non-Repetitive) V
DC Reverse Blocking Voltage V
DC Current, TC = 80°C (Resistive Load) I
Peak Half-Cycle Surge (Non-Repetitive) On-State Current (60Hz) I
Storage T emperature T
Operating T emperature T
RRM
RSM
R(DC)
F(DC)
FSM
stg
j
Maximum Mounting Torque M3 Mounting Screw — 0.59 ~ 0.98 N · m
Module Weight (Typical) — 10 Grams
Electrical and Thermal Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Max. Units
Blocking State Maximums
Reverse Leakage Current, Peak I
Conducting State Maximums
Forward Voltage Drop V
Switching Minimums
Reverse Recovery Time t
Lead Integrity
Thermal Maximums
Junction to Case Thermal Resistance R
Contact Thermal Resistance R
*Maximum ratings unless otherwise specified
RRM
FM
rr
— Tension Load: 2.5 kg 30.0 s
— Bending Load: 1 kg bent to 90° 2.0 times
th(j-c)
th(c-f)
V
RRM applied, Tj
V
RRM applied, Tj
= 25°C 0.1 mA
= 125°C 1.0 mA
Tj = 25°C, IFM = 200A 4.0 Volts
IFM = 200A, Tj = 150°C 0.2 µs
di/dt = -1000A/µs, VR = 300V
Junction to case 0.5 °C/Watt
Case to Fin, Thermal Grease Applied 0.5 °C/Watt
600 Volts
720 Volts
480 Volts
50 Amperes
1000 Amperes
-40 to +125 °C
-40 to +150 °C
MAXIMUM FORWARD CHARACTERISTIC
3
10
Tj = 25oC
, (AMPERES)
F
2
10
FORWARD CURRENT, I
1
10
1.0 2.0 3.0 4.0 5.0 6.0
FORWARD VOLTAGE DROP, VF, (VOLTS)
MAXIMUM TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (JUNCTION TO CASE)
0
10
0.5
, (°C/W)
0.4
th (j-c)
0.3
0.2
0.1
TRANSIENT THERMAL IMPEDANCE, Z
0
-3
10
1
10
-2
10
10
TIME (S)
RATED SURGE (NON-REPETITIVE)
FORWARD CURRENT
1000
800
600
400
SURGE FORWARD CURRENT (A)
200
0
-1
0
10
0
10
1
10
CYCLES (60Hz)
2
10
Sep.1998