MITSUBISHI FAST RECOVERY DIODE MODULE
RM400DY-66S
HVDi (High Voltage Diode) Module
RM400DY-66S
APPLICATION
3-level inverters, 3-level converters, DC choppers.
HIGH POWER SWITCHING USE
INSULATED TYPE
● IDC ................................................................400A
● V
RRM ...................................................... 3300V
● Insulated type
● 2-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
130
57 ± 0.25 57 ± 0.25
K1
A1
114
K2
C
A2
EE
G
E
C
61.5
18
C
4-M8 NUTS
20
40
140
124 ± 0.25
6-φ7 MOUNTING HOLES
A1
(E)
(E)
A2
CIRCUIT DIAGRAM
15
K1
K2
(C)
(C)
38
5
LABEL
30
Mar. 2003
MITSUBISHI FAST RECOVERY DIODE MODULE
RM400DY-66S
HIGH POWER SWITCHING USE
HVDi (High Voltage Diode) Module
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)
Symbol
VRRM
VRSM
VR(DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
Item
Symbol Item Conditions UnitRatings
DC
I
IFSM
2
I
t
Tj
Tstg
Viso
Output DC current
Surge forward current
2
t for fusing
I
Junction temperature
Storage temperature
Isolation Voltage
Mounting torque
—
Mass
—
T
C =25°C
1 cycle of half wave 60Hz, peak value, non-repetitive,
j = 25°C start, VRM = 0V
T
Value of one cycle surge current,
W = 8.3ms, Tj = 25°C start
t
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Typical value
Voltage class
66
3300
3300
2200
4.27 ✕ 10
–40 ~ +150
–40 ~ +125
6.67 ~ 13.00
2.84 ~ 6.00
INSULATED TYPE
Unit
400
3200
4
6000
1.5
A
N · m
N · m
°C
°C
kg
V
V
V
A
A
2
s
V
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
RRM
I
VFM
trr
Qrr
Rth(j-c)
Rth(c-f)
Repetitive reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Termal resistance
Contact thermal resistance
Item Conditions
VRRM applied, VRM = VRRM
IFM = 400A
FM = 400A, dif/dt = –800A/µs,
I
V
R = 1650V
Junction to case (Per 1/2 module)
Case to fin, conductive grease applied (Per 1/2 module)
Limits
Min Typ Max
—
—
—
—
—
—
—
3.50
—
100
—
0.036
4.55
1.20
—
0.072
—
Unit
mA
3
V
µs
µC
K/W
K/W
Mar. 2003
HVDi (High Voltage Diode) Module
PERFORMANCE CURVES
MITSUBISHI FAST RECOVERY DIODE MODULE
RM400DY-66S
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM FORWARD CHARACTERISTIC
3
Tj = 25°C
2
3
10
7
5
3
2
2
10
7
FORWARD CURRENT (A)
5
3
012345
FORWARD VOLTAGE (V)
REVERSE RECOVERY CHARACTERISTICS
VS. FORWARD CURRENT (TYPICAL
300
V
CC
= 1650V, diF/dt = –800A/µs
T
j
= 25°C
Inductive load
Integrated over range of 10%
200
(µC)
rr
Q
100
MAXIMUM TRANSIENT THERMAL IMPEDANCE
1
10
7
5
3
2
0
10
7
5
(°C/W)
3
2
th(j – c)
–1
10
Z
7
5
3
2
–2
10
10
)
REVERSE RECOVERY CHARACTERISTICS
(
JUNCTION TO CASE
)
Single Pulse
C
= 25°C
T
R
th(j – c)
= 0.072K/W
–3
23 57 23 57 23 57
10
–2
TIME (s
–1
10
)
VS. –di/dt (TYPICAL
)
10
0
500
V
CC
= 1650V
I
F
= 400A
400
300
(µC)
rr
Q
200
0
FORWARD CURRENT (A
100
0
10000 200 400 800600
)
0 500 1000 1500 2000 2500
–di/dt (A/µs
)
Mar. 2003
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