MITSUBISHI RA03M3540MD User Manual

Silicon RF Power Semiconductors

2 4

5

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RoHS Compliance , 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO

RA

RA03M3540

RARA

03M3540M

03M354003M3540

MD

D

MM

DD

DESCRIPTION

The RA03M3540MD is a 38 dBm output RF MOSFET
Amplifier Module for 7.2 volt portable radios that operate in the
350 to 400 MHz range.

FEATURES

• Enhancement-Mode MOSFET Transistors

(IDD≅0 @ VDD=7.2V, VGG=0V)

• P

>38dBm @ VDD=7.2V, Pin=19dBm

out

Idq1=20mA(Vgg1adjust.),Idq2=1A(Vgg2 adjust.)

• ηT>35% @ VDD=7.2V, P

Idq1=20mA(Vgg1 adjust.),Idq2=1A(Vgg2 adjust.)

• IMD3<-25dBc @ VDD=7.2V, P

Two tone test at 1KHz separation

Idq1=20mA(Vgg1 adjust.),Idq2=1A(Vgg2 adjust.)

• Broadband Frequency Range: 350-400MHz

• Low-Power Adjust. Current IGG=1mA (typ) at VGG=3.5V

• Module Size: 30 x 10 x 5.4 mm

=38dBm (Pin adjust.),

out

(average) =35dBm (Pin adjust.)

out

BLOCK DIAGRAM

1

1 RF Input (Pin)
2 FIRST STAGE GATE BIAS DC SUPPLY TERMINAL（Vgg1）
3 FINAL STAGE GATE BIAS DC SUPPLY TERMINAL（Vgg2）
4 Drain Voltage (VDD), Battery
5 RF Output (P
6 RF Ground (Case)

)

out

PACKAGE CODE: H46S

3

6

RoHS COMPLIANT

• RA03M3540MD-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER SUPPLY FORM

RA03M3540MD-101

Antistatic tray,

50 modules/tray

RA03M3540MD

28 Jun 2010

1/9

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RoHS COMPLIANT

Silicon RF Power Semiconductors

RA

RA03M3540

03M3540MMMMDDDD

RARA

03M354003M3540

MAXIMUM RATINGS

(T

=+25°C, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS RATING UNIT

VDD Drain Voltage VGG<3.5V 9.2 V

V

Gate Voltage VDD<7.2V, Pin=0mW 4 V

GG1

V

Gate Voltage VDD<7.2V, Pin=0mW 4 V

GG2

Pin Input Power 100 mW

P

Output Power 10 W

out

T

case(OP)

T

Operation Case Temperature Range

Storage Temperature Range -40 to +110 °C

stg

f=350-400MHz,
ZG=ZL=50Ω

-30 to +90 °C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS

(T

=+25°C, ZG=ZL=50Ω, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

f Frequency Range 350 - 400 MHz

VDD=7.2V,Pin(Single Carrier)=+19dBm,

P

Output Power

out

Idq1=20mA(Vgg1 adjust.),
Idq2=1A(Vgg2 adjust.)

ηT

2fo 2nd Harmonic - - -25 dBc

ρin

IGG Gate Current

IMD3

IMD5

GV Gain Variation

Total Efficiency 35 - - %

VDD=7.2V,P

(Single Carrier) =38dBm (,Pin adjust.),

out

Idq1=20mA(Vgg1 adjust.),

Input VSWR - - 4.4:1 —

Idq2=1A(Vgg2 adjust.)

rd

3

Inter Modulation

Distortion

5th Inter Modulation

Distortion

VDD=7.2V,P

(average)=35dBm(Pin adjust.),

out

Idq1=20mA(Vgg1 adjust.),
Idq2=1A(Vgg2 adjust.) ,

Two tone test at 1KHz separation
VDD=7.2V,P

(Single Carrier)=35dBm(Pin adjust.),

out

Across specified frequency range
Idq1=20mA(Vgg1 adjust.),

Idq2=1A(Vgg2 adjust.)
Vdd=6.0/7.2/9.2V,

Idq1=20mA(Vgg1 adjust),

— Stability

Idq2=1A(Vgg2 adjust) ,
Po(Single Carrier)=15-38dBm(Pin control)

LOAD VSWR=2:1(All Phase),Zg=50Ω

38 - - dBm

- 1 - mA

- - -25 dBc

- - -25 dBc

0 - 4 dB

No parasitic oscillation

—

— Load VSWR Tolerance

Vdd=9.2V, P
LOAD VSWR=2:1(All Phase),Zg=50Ω,
Idq1=20mA(Vgg1 adjust.@Vdd=7.2V),

(Single Carrier)=39dBm (Pin adjust.),

out

No degradation or destroy —

Idq2=1A(Vgg2 adjust.@Vdd=7.2V)

All parameters, conditions, ratings, and limits are subject to change without notice.

RA03M3540MD

28 Jun 2010

2/9

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

TYPICAL PERFORMANCE

RoHS COMPLIANT

(T

=+25°C, ZG=ZL=50Ω, unless otherwise specified)

case

Silicon RF Power Semiconductors

RA

RA03M3540

03M3540MMMMDDDD

RARA

03M354003M3540

RA03M3540MD

Effi vs. Po

Tc=+25deg.C, Vdd=7.2V
f=350MHz,
Idq 1st stager=20mA
Idq Final Stage=1.0A

50
45
40
35
30
25
20

Effi(%),Gp(dB)

15
10

5
0

10 15 20 25 30 35 40

50
45
40
35
30
25
20

Effi(%),Gp(dB)

15
10

5
0

10 15 20 25 30 35 40

Effi
Gp

Po(singl e carrie r)(dBm)

RA03M3540MD

Effi vs. Po

Tc=+25deg.C, Vdd=7.2V
f=375MHz,
Idq 1st stager=20mA
Idq Final Stage=1.0A

Effi
Gp

Po(singl e carrie r)(dBm)

RA03M3540MD

IMD3,IMD5 vs. Po

Tc=+25deg.C, Vdd=7.2V
f=350MHz,
Idq 1st stage=20mA
Idq Final Stage=1.0A

0

-10

-20

-30

-40

IMD3,IMD5(dBc)

-50

-60

-70
15 20 25 30 35 40

0

-10

-20

-30

-40

IMD3,IMD5(dBc)

-50

-60

-70
15 20 25 30 35 40

IMD3(Delta freq=1KHz)

IMD5(Delta freq=1KHz)

Po(2tone average )(dBm)

RA03M3540MD

IMD3,IMD5 vs. Po

Tc=+25deg.C, Vdd=7.2V
f=375MHz,
Idq 1st stage=20mA
Idq Final Stage=1.0A

IMD3(Delta freq=1KHz)

IMD5(Delta freq=1KHz)

Po(2tone average )(dBm)

50
45
40
35
30
25
20

Effi(%),Gp(dB)

15
10

5
0

10 15 20 25 30 35 40

RA03M3540MD

RA03M3540MD

Effi vs. Po

Tc=+25deg.C, Vdd=7.2V
f=400MHz,
Idq 1st stager=20mA
Idq Final Stage=1.0A

Effi
Gp

Po(singl e carrie r)(dBm)

3/9

RA03M3540MD

IMD3,IMD5 vs. Po

Tc=+25deg.C, Vdd=7.2V
f=400MHz,
Idq 1st stage=20mA
Idq Final Stage=1.0A

0

-10

-20

-30

-40

IMD3,IMD5(dBc)

-50

-60

-70
15 20 25 30 35 40

IMD3(Delta freq=1KHz)

IMD5(Delta freq=1KHz)

Po(2tone average )(dBm)

28 Jun 2010