MITSUBISHI RA02M8087MD User Manual

Silicon RF Power Semiconductors

2 4

5

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO

RA02M8087MD

RA02M8087MD

RA02M8087MDRA02M8087MD

DESCRIPTION

The RA02M8087MD is a 34 dBm output RF MOSFET
Amplifier Module for 7.2 volt portable radios that operate in the
806 to 869 MHz range.

FEATURES

• Enhancement-Mode MOSFET Transistors

(IDD≅0 @ VDD=7.2V, VGG=0V)

• P

>34dBm @ VDD=7.2V, Pin=14.5dBm

out

Idq1=20mA(Vgg1adjust.),Idq2=300mA(Vgg2 adjust.) ,

• ηT>30% @ VDD=7.2V, P

=34dBm (Pin adjust.),

out

Idq1=20mA(Vgg1 adjust.),Idq2=300mA(Vgg2 adjust.)

• IMD3<-26dBc @ VDD=7.2V, P

(average) =31dBm (Pin adjust.)

out

Two tone test at 1KHz separation

Idq1=20mA(Vgg1 adjust.),Idq2=300mA(Vgg2 adjust.)

• Broadband Frequency Range: 806-869MHz

• Low-Power Adjust. Current IGG=1mA (typ) at VGG=3.15V

• Module Size: 30 x 10 x 5.4 mm

BLOCK DIAGRAM

3

1

6

1 RF Input (Pin)
2 FIRST STAGE GATE BIAS DC SUPPLY TERMINAL（Vgg1）
3 FINAL STAGE GATE BIAS DC SUPPLY TERMINAL（Vgg2）
4 Drain Voltage (VDD), Battery
5 RF Output (P
6 RF Ground (Case)

)

out

PACKAGE CODE: H46S

RoHS COMPLIANT

• RA02M8087MD-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER SUPPLY FORM

RA02M8087MD-101

Antistatic tray,

50 modules/tray

RA02M8087MD

28 Jun 2010

1/9

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RoHS COMPLIANT

Silicon RF Power Semiconductors

RA02M8087MD

RA02M8087MD

RA02M8087MDRA02M8087MD

MAXIMUM RATINGS

(T

=+25°C, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS RATING UNIT

VDD Drain Voltage VGG<3.15V 9.2 V

V

Gate Voltage VDD<7.2V, Pin=0mW 3.15 V

GG1

V

Gate Voltage VDD<7.2V, Pin=0mW 3.15 V

GG2

Pin Input Power 100 mW

P

Output Power 5 W

out

T

case(OP)

T

Operation Case Temperature Range

Storage Temperature Range -40 to +110 °C

stg

f=806-869MHz, Vgg<3.15V
ZG=ZL=50Ω

-30 to +90 °C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS

(T

=+25°C, ZG=ZL=50Ω, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

f Frequency Range 806 - 869 MHz

VDD=7.2V,Pin(Single Carrier)=+16dBm,

P

Output Power

out

Idq1=20mA(Vgg1 adjust.),
Idq2=300mA(Vgg2 adjust.)

ηT

2fo 2nd Harmonic - - -30 dBc

ρin

IGG Gate Current

IMD3

IMD5

GV Gain Variation

Total Efficiency 30 - - %

VDD=7.2V,P

(Single Carrier) =34dBm (,Pin adjust.),

out

Idq1=20mA(Vgg1 adjust.),

Input VSWR - - 5.8:1 —

Idq2=300mA(Vgg2 adjust.)

rd

3

Inter Modulation

Distortion

5th Inter Modulation

Distortion

VDD=7.2V,P

(average)=31dBm(Pin adjust.),

out

Idq1=20mA(Vgg1 adjust.),
Idq2=300mA(Vgg2 adjust.) ,

Two tone test at 1KHz separation
VDD=7.2V,P

(Single Carrier)=34dBm(Pin adjust.),

out

Across specified frequency range
Idq1=20mA(Vgg1 adjust.),

Idq2=300mA(Vgg2 adjust.)
Vdd=6.12/7.2/9.2V,

Idq1=20mA(Vgg1 adjust),

— Stability

Idq2=300mA(Vgg2 adjust) ,
Po(Single Carrier)=15-34dBm(Pin control)

LOAD VSWR=2:1(All Phase),Zg=50Ω

34 - - dBm

- 1 - mA

- - -26 dBc

- - -30 dBc

0 - 4 dB

No parasitic oscillation

—

— Load VSWR Tolerance

Vdd=9.2V, P
LOAD VSWR=2:1(All Phase),Zg=50Ω,
Idq1=20mA(Vgg1 adjust.@Vdd=7.2V),

(Single Carrier)=34dBm (Pin adjust.),

out

No degradation or destroy —

Idq2=300mA(Vgg2 adjust.@Vdd=7.2V)

All parameters, conditions, ratings, and limits are subject to change without notice.

RA02M8087MD

28 Jun 2010

2/9

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

TYPICAL PERFORMANCE

Tc=+25deg.C, Vdd=7.2V
f=806MHz,
Idq 1st stager=20mA
Idq Final Stage=300mA

50
45
40
35
30
25
20

Effi(%),Gp(dB)

15
10

5
0

10 15 20 25 30 35 40

50
45
40
35
30
25
20

Effi(%),Gp(dB)

15
10

5
0

10 15 20 25 30 35 40

50
45
40
35
30
25
20

Effi(%),Gp(dB)

15
10

5
0

10 15 20 25 30 35 40

50
45
40
35
30
25
20

Effi(%),Gp(dB)

15
10

5
0

10 15 20 25 30 35 40

Gp

Effi

Tc=+25deg.C, Vdd=7.2V
f=824MHz,
Idq 1st stager=20mA
Idq Final Stage=300mA

Gp

Effi

Tc=+25deg.C, Vdd=7.2V
f=851MHz,
Idq 1st stager=20mA
Idq Final Stage=300mA

Gp

Effi

Tc=+25deg.C, Vdd=7.2V
f=869MHz,
Idq 1st stager=20mA
Idq Final Stage=300mA

Gp

Effi

(T

=+25°C, ZG=ZL=50Ω, unless otherwise specified)

case

RA02M8087MD

Effi vs. Po

Po(single carrier)(dBm)

RA02M8087MD

Effi vs. Po

Po(single carrier)(dBm)

RA02M8087MD

Effi vs. Po

Po(single carrier)(dBm)

RA02M8087MD

Effi vs. Po

Po(single carrier)(dBm)

RoHS COMPLIANT

RA02M8087MD

IMD3,IMD5 vs. Po

Tc=+25deg.C, Vdd=7.2V
f=806MHz,
Idq 1st stager=20mA

0

-10

-20

-30

-40

IMD3,IMD5(dBc)

-50

-60

-70
15 20 25 30 35 40

0

-10

-20

-30

-40

IMD3,IMD5(dBc)

-50

-60

-70
15 20 25 30 35 40

0

-10

-20

-30

-40

IMD3,IMD5(dBc)

-50

-60

-70
15 20 25 30 35 40

0

-10

-20

-30

-40

IMD3,IMD5(dBc)

-50

-60

-70
15 20 25 30 35 40

Idq Final Stage=300mA

IMD3(Delta freq=1KHz)
IMD5(Delta freq=1KHz)

Po(2ton e average)(dBm)

RA02M8087MD

IMD3,IMD5 vs. Po

Tc=+25deg.C, Vdd=7.2V
f=824MHz,
Idq 1st stager=20mA
Idq Final Stage=300mA

IMD3(Delta freq=1KHz)
IMD5(Delta freq=1KHz)

Po(2ton e average)(dBm)

RA02M8087MD

IMD3,IMD5 vs. Po

Tc=+25deg.C, Vdd=7.2V
f=851MHz,
Idq 1st stager=20mA
Idq Final Stage=300mA

IMD3(Delta freq=1KHz)
IMD5(Delta freq=1KHz)

Po(2ton e average)(dBm)

RA02M8087MD

IMD3,IMD5 vs. Po

Tc=+25deg.C, Vdd=7.2V
f=869MHz,
Idq 1st stager=20mA
Idq Final Stage=300mA

IMD3(Delta freq=1KHz)
IMD5(Delta freq=1KHz)

Po(2ton e average)(dBm)

Silicon RF Power Semiconductors

RA02M8087MD

RA02M8087MD

RA02M8087MDRA02M8087MD

RA02M8087MD

28 Jun 2010

3/9