MITSUBISHI RA01L9595M User Manual

Silicon RF Power Semiconductors

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RA01L9595M

RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER

DESCRIPTION

The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors.

The output power and drain current increase as the gate voltage
increases. With a gate voltage around 0.5V (minimum), output
power and drain current increases substantially. The nominal
output power becomes available at 1.5V (typical) and 2.0V
(maximum). At VGG=2.0V, the typical gate current is 1mA.

FEATURES

• Enhancement-Mode MOSFET Transistors

(IDD0 @ VDD=3.3V, VGG=0V)

• P

>1.4W, ηT>35% @ VDD=3.3V, VGG=2.0V, Pin=30mW

out

• Frequency Range: 952-954MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=2.0V

• Module Size: 9.1 x 9.2 x 1.8 mm

BLOCK DIAGRAM

2

1

1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground

out

)

3

PACKAGE CODE: H58

4

5

RoHS COMPLIANCE

• RA01L9595M -101 is a RoHS compliance products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.

How ever,it is applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER SUPPLY FORM

RA01L9595M -101

Antistatic tray,

168 modules/tray

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ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RoHS COMPLIANT

Silicon RF Power Semiconductors

RA01L9595M

MAXIMUM RATINGS

(T

=+25deg.C. unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS RATING UNIT

V
V

P

P

T

case(OP)

T

Drain Voltage VGG<2.0V, ZG=ZL=50ohm 6 V

DD

Gate Voltage VDD<3.3V, Pin=0mW, ZG=ZL=50ohm 3 V

GG

Input Power 50 mW

in

Output Power 4 W

out

Operation Case Temperature Range
Storage Temperature Range -40 to +110

stg

f=952-954MHz, VGG<2.0V
ZG=ZL=50ohm

-30 to +90

°C
°C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS

(T

=+25°C, ZG=ZL=50, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

f Frequency Range 952 - 954 MHz

P

η

2f



— Stability

— Load VSWR Tolerance

Output Power 1.4 - - W

out

Total Efficiency 35 - - %

T

2ndHarmonic - - -30 dBc

o

Input VSWR

in

VDD=3.3V
VGG=2.0V
PiN=30mW

- - 4.4:1 —
VDD=2.5/3.3/6.0V, VGG=0.5-2.0V,
PIN=20-50mW , Po<2.5W

No parasitic oscillation —

Zg=50ohm, Load VSWR=4:1

VDD=6.0V, PiN=30mW,
P

=2W (VGGcontrol),

out

No degradation ordestroy —

Zg=50ohm, Load VSWR=20:1

All parameters, conditions, ratings, and limits are subject to change without notice.

RA01L9595M 22 Jun 2010

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ELECTROSTATIC SENSITIVE DEVICE

OUTPUT POWER, POWER GAIN and

OUTPUT POWER and DRAIN CURRENT

DRAIN CURRENT versus INPUT POWER

versus GATE VOLTAGE

OUTPUT POWER and DRAIN CURRENT

versus DRAINVOLTAGE

versus FREQUENCY

INPUT VSWR versus FREQUENCY

P

=30mW

OBSERVE HANDLING PRECAUTIONS

RoHS COMPLIANT

Silicon RF Power Semiconductors

RA01L9595M

TYPICAL PERFORMANCE (Vdd=3.3V,T

OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY

5

4

(W)

out

3

P

out

2

OUTPUTPOWERP

1

0

940 945 950 955 960

5

4

(-)

in

3

2

INPUTVSWRr

ｎT

VDD=3.3V
VGG=2.0V

FREQUENCY f(MHz)

VDD=3.3V
VGG=2.0V
Pin=30mW

rin

=+25deg.C, ZG=ZL=50, unless otherwise specified)

case

50
45
40
35
30
25
20
15
10
5
0

TOTALEFFICIENCY(%)

-30

-35

-40

-45

-50

HARMONICS(dBc)

-55

-60
940 945 950 955 960

2nd

3rd

FREQUENCY f(MHz)

VDD=3.3V
VGG=2.0V
Pin=30mW

1

940 945 950 955 960

FREQUENCY f(MHz)

40

30

(dBm)

out

Gp

20

I

DD

10

POWER GAIN Gp(dB)

OUTPUT POWER P

0

-10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)

6

f=953MHz,

5

(W)

VGG=2.0V,

out

Pin=30mW

4

P

out

f=953MHz,
VDD=3.3V,
VGG=2.0V

4

3

2

1

0

3.0

2.5

(A)

(W)

DD

out

f=953MHz,
VDD=3.3V,
Pin=30mW

P

out

2.0

1.5

I

DD

1.0

0.5

DRAIN CURRENT I

OUTPUT POWER P

0.0

3.0

2.5

2.0

1.5

1.0

0.5

0.0

(A)

DD

DRAIN CURRENT I

0 0.5 1 1.5 2 2.5 3

GATE VOLTAGE VGG(V)

6

5

(A)

DD

4

3

P

out

2

1

OUTPUT POWER P

0

1 2 3 4 5 6

DRAIN VOLTAGE VDD(V)

RA01L9595M 22 Jun 2010

3

2

I

DD

1

DRAIN CURRENT I

0

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ELECTROSTATIC SENSITIVE DEVICE

versus FREQUENCY

INPUT VSWR versus FREQUENCY

OBSERVE HANDLING PRECAUTIONS

RoHS COMPLIANT

Silicon RF Power Semiconductors

RA01L9595M

TYPICAL PERFORMANCE (Vdd=5.0V,T

OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY

5

T@Po=2W

4

(W)

out

3

P

2

OUTPUT POWER P

1

out

0

940 945 950 955 960

FREQUENCY f(MHz)

5

4

(-)

in

r

3

ｎ

VDD=5.0V
VGG=2.0V
Pin=30mW

VDD=5.0V
VGG=2.0V
Pin=30mW

in

r

=+25deg.C, ZG=ZL=50, unless otherwise specified)

case

50
45
40
35
30
25
20
15
10

TOTAL EFFICIENCY(%)

-30

-35

-40

2nd

-45

-50

HARMONICS (dBc)

-55

3rd

5
0

-60
940 945 950 955 960

FREQUENCY f(MHz)

VDD=5.0V
VGG=2.0V
Pin=30mW

2

INPUT VSWR

1

940 945 950 955 960

FREQUENCY f(MHz)

RA01L9595M 22 Jun 2010

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