MITSUBISHI RA01L8693MA User Manual

Silicon RF Power Semiconductors

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RA01L8693MA

RoHS Compliance , 865-928MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER

DESCRIPTION

The RA01L8693MA is a 1.4-watt RF MOSFET Amplifier Module.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors.

The output power and drain current increase as the gate voltage increases. With a gate voltage around 0.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 1.5V (typical) and 2.0V (maximum). At VGG=2.0V, the typical gate current is 1mA.

FEATURES

• Enhancement-Mode MOSFET Transistors

(IDD0 @ VDD=3.3V, VGG=0V)

• P

>1.4W, ηT>38% @ VDD=3.3V, VGG=2.0V, Pin=30mW

out

• Broadband Frequency Range: 865-928MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=2.0V

• Module Size: 9.1 x 9.2 x 1.8 mm

BLOCK DIAGRAM

2

1

1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (P 5 RF Ground

out

)

3

PACKAGE CODE: H58

4

5

RoHS COMPLIANCE

• RA01L8693MA -101 is a RoHS compliance products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.

How ever,it is applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER SUPPLY FORM

RA01L8693MA -101

Antistatic tray,

168 modules/tray

RA01L8693MA 22 Jun 2010

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ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RoHS COMPLIANT

Silicon RF Power Semiconductors

RA01L8693MA

MAXIMUM RATINGS

(T

=+25deg.C. unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS RATING UNIT

V V

P

T

case(OP)

T

Drain Voltage VGG<2.0V, ZG=ZL=50ohm 6 V

DD

Gate Voltage VDD<3.3V, Pin=0mW, ZG=ZL=50ohm 3 V

GG

Input Power 50 mW

in

Output Power 4 W

out

Operation Case Temperature Range Storage Temperature Range -40 to +110

stg

f=865-928MHz, VGG<2.0V ZG=ZL=50ohm

-30 to +90

°C °C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS

(T

=+25°C, ZG=ZL=50, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

f Frequency Range 865 - 928 MHz

P

η

2f



— Stability

— Load VSWR Tolerance

Output Power 1.4 - - W

out

Total Efficiency 38 - - %

T

2ndHarmonic - - -30 dBc

o

Input VSWR

in

VDD=3.3V VGG=2.0V PiN=30mW

- - 4.4:1 — VDD=2.5/3.3/6.0V, VGG=0.5-2.0V, PIN=20-50mW , Po<2.5W

No parasitic oscillation —

Zg=50ohm, Load VSWR=4:1

VDD=6.0V, PiN=30mW, P

=2W (VGGcontrol),

out

No degradation or destroy —

Zg=50ohm, Load VSWR=20:1

All parameters, conditions, ratings, and limits are subject to change without notice.

RA01L8693MA 22 Jun 2010

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ELECTROSTATIC SENSITIVE DEVICE

versus FREQUENCY

INPUT VSWR versus FREQUENCY

in

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

OBSERVE HANDLING PRECAUTIONS

RoHS COMPLIANT

Silicon RF Power Semiconductors

RA01L8693MA

TYPICAL PERFORMANCE (Vdd=3.3V,T

OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rdHARMONICS versus FREQUENCY

5

4

(W)

out

3

2

OUTPUT POWERP

1

0

(-)

in

r

INPUTVSWR

P

out

850 860 870 880 890 900 910 920 930 940

5

4

3

2

FREQUENCY f(MHz)

VDD=3.3V VGG=2.0V Pin=30mW

r

=+25deg.C, ZG=ZL=50, unless otherwise specified)

case

-30

-35

-40

-45

-50

HARMONICS(dBc)

-55

-60 850 860 870 880 890 900 910 920 930 940

2nd

FREQUENCY f(MHz)

VDD=3.3V VGG=2.0V

50 45 40 35 30 25 20 15

TOTALEFFICIENCY(%)

10 5 0

VDD=3.3V VGG=2.0V Pin=30mW

3rd

1

850 860 870 880 890 900 910 920 930 940

FREQUENCY f(MHz)

40

30

(dBm)

out

Gp

20

10

POWER GAIN Gp(dB)

OUTPUT POWER P

IDD

f=865MHz, VDD=3.3V, VGG=2.0V

0

-10 -5 0 5 10 15 20 INPUT POWER Pin(dBm)

40

30

(dBm)

out

Gp

4

P

out

(A)

3

DD

2

1

DRAIN CURRENT I

0

40

P

out

30

(dBm)

out

Gp

20

10

POWER GAIN Gp(dB)

OUTPUT POWER P

IDD

f=900MHz, VDD=3.3V, VGG=2.0V

0

4

(A)

3

DD

I

2

1

DRAIN CURRENT

0

-10 -5 0 5 10 15 20 INPUT POWER Pin(dBm)

4

P

out

(A)

3

DD

20

10

POWER GAIN Gp(dB)

OUTPUT POWER P

0

-10 -5 0 5 10 15 20 INPUT POWER Pin(dBm)

RA01L8693MA 22 Jun 2010

IDD

f=928MHz, VDD=3.3V, VGG=2.0V

2

1

DRAIN CURRENT I

0

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ELECTROSTATIC SENSITIVE DEVICE

OUTPUT POWER and DRAIN CURRENT

versus GATE VOLTAGE

OUTPUT POWER and DRAIN CURRENT

versus GATE VOLTAGE

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

OBSERVE HANDLING PRECAUTIONS

RoHS COMPLIANT

Silicon RF Power Semiconductors

RA01L8693MA

TYPICAL PERFORMANCE (T

6

f=865MHz,

5

VGG=2.0V,

(W)

Pin=30mW

out

4

3

2

1

OUTPUTPOWERP

0

1.0 2.0 3.0 4.0 5.0 6.0

6

5

(W)

out

4

3

2

1

OUTPUTPOWERP

0

1.0 2.0 3.0 4.0 5.0 6.0

P

out

DRAIN VOLTAGE VDD(V)

f=928MHz, VGG=2.0V, Pin=30mW

P

out

DRAIN VOLTAGE VDD(V)

=+25deg.C, ZG=ZL=50, unless otherwise specified)

case

6

5

4

3

I

DD

2

DD

1

0

6

5

(A)

4

DD

3

2

1

DRAINCURRENT I

0

6

f=900MHz,

5

VGG=2.0V,

(W)

Pin=30mW

out

(A)

4

DD

3

2

1

OUTPUTPOWERP

DRAINCURRENTI

0

1.0 2.0 3.0 4.0 5.0 6.0

P

out

DRAIN VOLTAGE VDD(V)

6

5

(A)

4

DD

3

2

I

DD

1

DRAINCURRENT I

0

3.0

f=865MHz,

2.5

(W)

out

2.0

VDD=3.3V, Pin=30mW

P

out

1.5

I

DD

1.0

0.5

OUTPUTPOWER P

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 GATE VOLTAGE VGG(V)

3.0

f=928MHz,

2.5

2.0

VDD=3.3V, Pin=30mW

P

out

(W)

out

1.5

1.0

I

3.0

2.5

2.0

1.5

1.0

0.5

0.0

3.0

P

f=900MHz,

2.5

(W)

(A)

DD

out

VDD=3.3V, Pin=30mW

2.0

out

1.5

I

1.0

0.5

OUTPUTPOWER P

DD

DRAINCURRENT I

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 GATE VOLTAGE VGG(V)

3.0

2.5

2.0

1.5

1.0

0.5

0.0

(A)

DD

DRAIN CURRENT I

3.0

2.5

(A)

2.0

DD

1.5

DD

1.0

0.5

OUTPUTPOWER P

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 GATE VOLTAGE VGG(V)

RA01L8693MA 22 Jun 2010

0.5

DRAIN CURRENT I

0.0

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