Mitsubishi QM300HC-M Datasheet

QM300HC-M

MITSUBISHI TRANSISTOR MODULES

QM300HC-M

HIGH POWER SWITCHING USE

NON-INSULATED TYPE

• IC Collector current ........................ 300A

• V

CEX Collector-emitter voltage ........... 350V

• h

FE DC current gain............................. 100

• Non-Insulated Type

APPLICATION

Robotics, Welders, Forklifts, Golf cart

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

94

80

20

22

M4 M6

EB

8

BX

1212

64

E

16

22

25

φ5.5

48

62

C

B

E

BX

E

LABEL

8

5.5

21

25

27

Feb.1999

ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)

Symbol

CEX (SUS)

V

VCEX

VCBO

VEBO

IC

–IC

PC

IB

–ICSM

Tj

Tstg

Viso

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Collector reverse current

Collector dissipation

Base current

Surge collector reverse current
(forward diode current)

Junction temperature

Storage temperature

Isolation voltage

—

Mounting torque

—

Weight

Parameter

C=1A, VEB=2V

I

EB=2V

V

Emitter open

Collector open

DC

DC (forward diode current)

C=25°C

T

DC

Peak value of one cycle of 60Hz (half wave)

Charged part to case, AC for 1 minute

B(E) terminal screw M4

BX terminal screw M4

Main terminal screw M6

Mounting screw M5

Typical value

Conditions

MITSUBISHI TRANSISTOR MODULES

QM300HC-M

HIGH POWER SWITCHING USE

NON-INSULATED TYPE

Ratings

350

350

400

10

300

300

1250

10

3000

–40~+150

–40~+125

—

0.98~1.47

10~15

0.98~1.47

10~15

1.96~2.94

20~30

1.47~1.96

15~20

420

Unit

V

V

V

V

A

A

W

A

A

°C
°C

V

N·m

kg·cm

N·m

kg·cm

N·m

kg·cm

N·m

kg·cm

g

ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)

Symbol

I

CEX

ICBO

IEBO

VCE (sat)

VBE (sat)

–VCEO

hFE

ton

ts

tf

Rth (j-c) Q

Rth (j-c) R

Rth (c-f)

Parameter

Collector cutoff current

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-emitter reverse voltage

DC current gain

Switching time

Thermal resistance
(junction to case)

Contact thermal resistance
(case to fin)

V

CE=350V, VEB=2V

CB=400V,Emitter open

V

EB=10V

V

I

C=300A, IB=3.0A

–I

C=300A (diode forward voltage)

C=300A, VCE=2V

I

CC=200V, IC=300A, IB1=–IB2=6A

V

Transistor part

Diode part

Conductive grease applied

Test conditions

Min.

—

—

—

—

—

—

100

—

—

—

—

—

—

Limits

Typ.

—

—

—

—

—

—

—

—

—

—

—

—

—

Max.

2.0

2.0

600

2.0

2.5

1.85

—

2.0

10

3.0

0.1

0.25

0.05

Unit

mA

mA

mA

V

V

V

—

µs
µs

µs
°C/W
°C/W

°C/W

Feb.1999