Mitsubishi QM300HA-24B Datasheet

QM300HA-24B
MITSUBISHI TRANSISTOR MODULES
QM300HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
IC Collector current ........................ 300A
V
CEX Collector-emitter voltage ......... 1200V
h
FE DC current gain............................. 750
Insulated Type
UL Recognized Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
108
7
0.25
48±
4–φ6.5
62
BX
4–R6.5
1410
14 10
16
8
3–M4
7.5
9
9
916 16
BE
BX
18.53
25
93±
0.25
EC
29
2–M6
C
+1
24.5
–0.5
LABEL
+1
41
35
–0.5
7
E
B
E
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V VCEX VCBO VEBO IC –IC PC IB
–ICSM
Tj Tstg Viso
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current
Surge collector reverse current (forward diode current)
Junction temperature Storage temperature Isolation voltage
Mounting torque
Weight
Parameter
Conditions
C=1A, VEB=2V
I
EB=2V
V Emitter open Collector open DC DC (forward diode current)
C=25°C
T DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M6
Mounting screw M6
B(E) terminal screw M4
BX terminal screw M4
Typical value
MITSUBISHI TRANSISTOR MODULES
QM300HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
Ratings
1200 1200 1200
7 300 300
1980
16
3000
–40~+150 –40~+125
2500
1.96~2.94 20~30
1.96~2.94 20~30
0.98~1.47 10~15
0.98~1.47 10~15
470
Unit
V V V V A A
W
A
A
°C °C
V
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R
Rth (c-f)
Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
Switching time
Thermal resistance (junction to case)
Contact thermal resistance (case to fin)
Parameter
Test conditions
CE=1200V, VEB=2V
V
CB=1200V,Emitter open
V
EB=7V, Collector open
V
I
C=300A, IB=400mA
I
C=–300A (diode forward voltage) C=300A, VCE=4.0V
I
CC=600V, IC=300A, IB1=600mA, –IB2=6.0A
V
Transistor part Diode part
Conductive grease applied
Min.
— — — — — —
750
— — — — —
Limits
Typ.
— — — — — — — — — — — —
Max.
4.0
4.0
200
4.0
4.0
1.8 —
2.5 15
3.0
0.063
0.3
0.04
Unit
mA mA mA
V V V
µs µs
µs °C/W °C/W
°C/W
Feb.1999
Loading...
+ 3 hidden pages