Mitsubishi QM20TD-H Datasheet
QM20TD-H
MITSUBISHI TRANSISTOR MODULES
QM20TD-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
• IC Collector current .......................... 20A
• V
CEX Collector-emitter voltage ........... 600V
• h
FE DC current gain...............................75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Air conditioner, Small to medium size inverters, CVCF
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
76
93
106
15
7
7 (23.5)
25.5
2
Tab#110, t=0.5(Fig. 1) Tab#250, t=0.8(Fig. 2)
φ5.5
28
45
Fig. 1 Fig. 2
BvP
EvP
8.0
6.35
φ1.65
3.4
1.5
9.5
BwP
EwP
4
φ1.2
8.6
P
2.8
5.5
1.5
BuP
EuP
uvw
18
(30.5)
715
11 25.5
(22.45)
LABEL
BuN
13
7
EuN
N
BvN
EvN
BwN
EwN
Note: All Transistor Units are Darlingtons.
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
Conditions
MITSUBISHI TRANSISTOR MODULES
QM20TD-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Ratings
600
600
600
7
20
20
100
1
200
–40~+150
–40~+125
2000
1.47~1.96
15~20
90
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
V
CE=600V, VEB=2V
CB=600V, Emitter open
V
EB=7V
V
I
C=20A, IB=0.28A
–I
C=20A (diode forward voltage)
C=20A, VCE=2V/5V
I
CC=300V, IC=20A, IB1=–IB2=0.4A
V
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Test conditions
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
150
2.0
2.5
1.5
—
1.5
12
2.0
1.2
2.2
0.35
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
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