QM200HC-M
MITSUBISHI TRANSISTOR MODULES
QM200HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
• IC Collector current ........................ 200A
• V
CEX Collector-emitter voltage ........... 350V
• h
FE DC current gain............................. 100
• Non-Insulated Type
APPLICATION
Robotics, Welders, Forklifts, Golf cart
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
5.4
EBBX
8
12 12
67.5
80
92.2
E
14
22
M4 M6
15
35.5
C
B
E
BX
E
LABEL
4.5
26
(28)
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
B(E) terminal screw M4
BX terminal screw M4
Main terminal screw M6
Mounting screw M5
Typical value
Conditions
MITSUBISHI TRANSISTOR MODULES
QM200HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
Ratings
350
350
400
10
200
200
830
6
2000
–40~+150
–40~+125
—
0.98~1.47
10~15
0.98~1.47
10~15
1.96~2.94
20~30
1.47~1.96
15~20
200
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
V
CE=350V, VEB=2V
CB=400V, Emitter open
V
EB=10V
V
I
C=200A, IB=2A
–I
C=200A (diode forward voltage)
C=200A, VCE=2V
I
CC=200V, IC=200A, IB1=–IB2=4A
V
Transistor part
Diode part
Conductive grease applied
Test conditions
Min.
—
—
—
—
—
—
100
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
400
2.0
2.5
1.5
—
2.0
10
3.0
0.15
0.25
0.07
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
PERFORMANCE CURVES
MITSUBISHI TRANSISTOR MODULES
QM200HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
400
Tj=25°C
360
C (A)
320
280
240
IB=4.0A
IB=2.0A
IB=1.0A
200
160
120
IB=0.4A
IB=0.2A
80
COLLECTOR CURRENT I
40
0
01 23 4 5
3
10
7
5
FE
4
3
2
2
10
7
5
4
3
DC CURRENT GAIN h
2
1
10
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
VCE=2.0V
Tj=25°C
T
j
=125°C
1
57 2 3457
10
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
B (A)
10
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
1
VCE=2.0V
7
j
=25°C
T
5
4
3
2
10
, VBE (sat) (V)SWITCHING TIME t
CE (sat)
1
7
5
4
3
2
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
V
BE(sat)
10
VCE=5.0V
2
2345
0
10
7
5
4
3
BASE CURRENT I
2
–1
10
1.5 1.7 1.9 2.1 2.3 2.5
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
5
4
3
VCE (sat) (V)
2
VOLTAGE
1
IC=100A
IC=50A
COLLECTOR-EMITTER SATURATION
0
10
–2
–1
10
444
BASE CURRENT I
0
10
7
5
4
3
2
–1
10
SATURATION VOLTAGE V
V
CE(sat)
IB=2.0A
Tj=25°C
Tj=125°C
1
10
45 7 2 3 45 7
10
2
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
1
10
7
5
IC=200A
4
3
2
on, ts, tf (µs)
0
10
7
5
4
10
3
2
–1
1
23457 23457
10
IC=150A
Tj=25°C
j=125°C
T
0
10
B (A) COLLECTOR CURRENT IC (A)
1
10
753275327532
V
CC
IB1=–IB2=4.0A
2
10
=200V
Tj=25°C
Tj=125°C
t
s
t
on
t
f
234
2
10
3
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM200HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
SWITCHING TIME VS. BASE
REVERSE BIAS SAFE OPERATING AREA
CURRENT (TYPICAL)
2
1
10
(µs)
7
5
s, tf
4
t
s
3
2
t
0
10
7
5
SWITCHING TIME t
4
3
2
3457 2 3457
f
VCC=200V
I
C
=200A
IB1=4A
Tj=25°C
j
T
10
=125°C
0
10
1
23
400
Tj=125°C
350
C (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –I
300
250
IB2=–4A
200
150
100
COLLECTOR CURRENT I
50
0
0 400
50 100 150 200 250 300 350
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
3
10
7
5
3
C (A)
2
2
10
7
5
3
2
1
10
7
5
3
COLLECTOR CURRENT I
T
C
2
NON–REPETITIVE
0
10
0
10
=25°C
DC
1
10
444
COLLECTOR-EMITTER VOLTAGE V
10ms
100µs
1ms
10
50µs
200µs
2
3
10
753275327532
CE (V) CASE TEMPERATURE TC (°C)
100
90
80
SECOND
BREAKDOWN
AREA
70
60
50
40
COLLECTOR
DISSIPATION
30
20
10
0
0 20 60 100 120 16040 80 140
(°C/ W)
Zth (j–c)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
0
10
0.20
1
10
7532
4
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
10
–3
–2
10
444
10
TIME (s)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
3
10
C (A)
7
5
3
2
2
10
7
5
3
2
1
10
7
5
3
2
0
–1
0
10
753275327532
10
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Tj=25°C
Tj=125°C
COLLECTOR-EMITTER REVERSE VOLTAGE
CEO (V)
–V
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM200HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
2000
1600
1200
CSM (A)
800
–I
400
0
SURGE COLLECTOR REVERSE CURRENT
10
0
10
1
7543275432
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE
0.40
CHARACTERISTIC (DIODE)
0
10
1
10
7532
4
0.36
0.32
0.28
0.24
(°C/ W)
0.20
0.16
Zth (j–c)
0.12
0.08
0.04
0
10
–3
–2
10
444
10
–1
TIME (s)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
3
10
7
V
CC
=200V
5
IB1=–IB2=4A
2
1
0
10
Tj=25°C
Tj=125°C
Q
t
0
1
10
444
10
2
I
3
2
10
7
5
3
2
(A), Qrr (µc)
Irr
10
7
5
3
2
2
10
0
10
753275327532
10
2
10
1
10
rr
rr (µs)
rr
10
rr
10
10
753275327532
t
0
–1
3
Feb.1999
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