Mitsubishi QM200HA-HK Datasheet
QM200HA-HK
MITSUBISHI TRANSISTOR MODULES
QM200HA-HK
HIGH POWER SWITCHING USE
INSULATED TYPE
• IC Collector current ........................ 200A
• V
CEX Collector-emitter voltage ........... 600V
• h
FE DC current gain...............................75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
94
4–φ5.5
61
39
3–M5
18.8 23 23 17.5
E2
C2E1
B1X
80±
0.25
(12) (12)(12)
C1
1.3
E1B1
Tab#110, t=0.5
306
0.25
48±
9.5
20.5
0.1
9±
LABEL
E1
C1
(E2)
29
–0.5
(C2E1)
B1X
28
+1.5
20.5
8
C1
E1
B1
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
Conditions
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M5
Typical value
MITSUBISHI TRANSISTOR MODULES
QM200HA-HK
HIGH POWER SWITCHING USE
INSULATED TYPE
Ratings
600
600
600
7
200
200
1250
12
2000
–40~+150
–40~+125
2500
1.47~1.96
15~20
1.47~1.96
15~20
420
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Parameter
Test conditions
CE=600V, VEB=2V
V
CB=600V, Emitter open
V
EB=7V
V
I
C=200A, IB=2.6A
–I
C=200A (diode forward voltage)
C=200A, VCE=2V/5V
I
CC=300V, IC=200A, IB1=–IB2=4A
V
Transistor part
Diode part
Conductive grease applied
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
4.0
4.0
200
2.0
2.5
1.75
—
2.0
12
3.0
0.1
0.39
0.05
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
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