Mitsubishi QM200HA-2H Datasheet

QM200HA-2H

MITSUBISHI TRANSISTOR MODULES

QM200HA-2H

HIGH POWER SWITCHING USE

INSULATED TYPE

• IC Collector current ........................ 200A

• V

CEX Collector-emitter voltage ......... 1000V

• h

FE DC current gain............................... 75

• Insulated Type

• UL Recognized
Yellow Card No. E80276 (N)

File No. E80271

APPLICATION

AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

108

3

4

20

20

4

BX

9

(13) (21) (29)

M4

93

16

C

6.5
M6

E

16

9
B

M6

φ6.5

48

62

BX

E

B

C

25.5

LABEL

41.5
36

Feb.1999

ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)

Symbol

CEX (SUS)

V

VCEX

VCBO

VEBO

IC

–IC

PC

IB

–ICSM

Tj

Tstg

Viso

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Collector reverse current

Collector dissipation

Base current

Surge collector reverse current
(forward diode current)

Junction temperature

Storage temperature

Isolation voltage

—

Mounting torque

—

Weight

Parameter

C=1A, VEB=2V

I

EB=2V

V

Emitter open

Collector open

DC

DC (forward diode current)

C=25°C

T

DC

Peak value of one cycle of 60Hz (half wave)

Charged part to case, AC for 1 minute

Main terminal screw M6

Mounting screw M6

B(E) terminal screw M4

BX terminal screw M4

Typical value

Conditions

MITSUBISHI TRANSISTOR MODULES

QM200HA-2H

HIGH POWER SWITCHING USE

INSULATED TYPE

Ratings

1000

1000

1000

7

200

200

1560

10

2000

–40~+150

–40~+125

2500

1.96~2.94

20~30

1.96~2.94

20~30

0.98~1.47

10~15

0.98~1.47

10~15

460

Unit

V

V

V

V

A

A

W

A

A

°C
°C

V

N·m

kg·cm

N·m

kg·cm

N·m

kg·cm

N·m

kg·cm

g

ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)

Symbol

I

CEX

ICBO

IEBO

VCE (sat)

VBE (sat)

–VCEO

hFE

ton

ts

tf

Rth (j-c) Q

Rth (j-c) R

Rth (c-f)

Parameter

Collector cutoff current

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-emitter reverse voltage

DC current gain

Switching time

Thermal resistance
(junction to case)

Contact thermal resistance
(case to fin)

V

CE=1000V, VEB=2V

CB=1000V, Emitter open

V

EB=7V

V

I

C=200A, IB=4A

–I

C=200A (diode forward voltage)

C=200A, VCE=2.8V/5V

I

CC=600V, IC=200A, IB1=–IB2=4A

V

Transistor part

Diode part

Conductive grease applied

Test conditions

Min.

—

—

—

—

—

—

75/100

—

—

—

—

—

—

Limits

Typ.

—

—

—

—

—

—

—

—

—

—

—

—

—

Max.

4.0

4.0

800

2.5

3.5

1.8

—

3.0

15

3.0

0.08

0.35

0.04

Unit

mA

mA

mA

V

V

V

—

µs
µs

µs
°C/W
°C/W

°C/W

Feb.1999