Mitsubishi QM200DY-HK Datasheet

Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100DY-HK
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
QM100DY-HK
IC Collector current ........................ 100A
V
CEX Collector-emitter voltage ........... 600V
h
FE DC current gain...............................75
Insulated Type
UL Recognized Yellow Card No. E80276 (N)
File No. E80271
94
61
18.8
23 23 17.5
1.3
30
9
B2X
B2
B1X
C2E1
E2 C1
80±
0.25
E2
E1B1
6
12
6
12
48±
0.25
9.5
20.5
0.1
(12) (12)
(12)
8
20.5
28
29
+1.5
–0.5
B2X
C2E1
B1X
E2
C1
B2 E2
E1 B1
4–φ5.5
3–M5
Tab#110, t=0.5
LABEL
Feb.1999
Symbol
I
CEX
ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R
Rth (c-f)
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Unit
mA mA mA
V V V
µs µs
µs °C/W °C/W
°C/W
Limits
Min.
— — — — — —
75/100
— — — — —
Symbol
V
CEX (SUS)
VCEX VCBO VEBO IC –IC PC IB
–ICSM
Tj Tstg Viso
Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current
Surge collector reverse current (forward diode current)
Junction temperature Storage temperature Isolation voltage
Mounting torque
Weight
Conditions
I
C=1A, VEB=2V
V
EB=2V
Emitter open Collector open DC DC (forward diode current) T
C=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M5
Typical value
Ratings
600 600 600
7 100 100 620
6
1000
–40~+150 –40~+125
2500
1.47~1.96 15~20
1.47~1.96 15~20
420
Unit
V V V V A A
W
A
A
°C °C
V
N·m
kg·cm
N·m
kg·cm
g
Parameter
Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
Switching time
Thermal resistance (junction to case)
Contact thermal resistance (case to fin)
Test conditions
V
CE=600V, VEB=2V
V
CB=600V, Emitter open
V
EB=7V
I
C=100A, IB=1.3A
–I
C=100A (diode forward voltage)
I
C=100A, VCE=2V/5V
V
CC=300V, IC=100A, IB1=–IB2=2A
Transistor part (per 1/2 module) Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Typ.
— — — — — — — — — — — —
Max.
2.0
2.0
100
2.0
2.5
1.75 —
2.0 12
3.0
0.2
0.65
0.1
MITSUBISHI TRANSISTOR MODULES
QM100DY-HK
HIGH POWER SWITCHING USE
INSULATED TYPE
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