Mitsubishi QM200DY-2HB Datasheet
QM200DY-2HB
MITSUBISHI TRANSISTOR MODULES
QM200DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
• IC Collector current ........................ 200A
• V
CEX Collector-emitter voltage ......... 1000V
• h
FE DC current gain.............................750
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
112
93±
0.25
25 25 21.5
17
26
4–φ6.5
MAX
6615
1
C1E2C2E1
B1XB2X
5
14
17817817
3 – M6
1
LABEL
B2E2B1 E1
85
Tab#110, t=0.5
2.8
8.5Min.
21
(7)
6
15
6
B2X
C2E1
0.25
70±
89
E2
B2
E2
C1
B1X
E1
B1
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
Conditions
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M6
Mounting screw M6
Typical value
MITSUBISHI TRANSISTOR MODULES
QM200DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
Ratings
1000
1000
1000
7
200
200
1560
10
2000
–40~+150
–40~+125
2500
1.96~2.94
20~30
1.96~2.94
20~30
870
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Parameter
Test conditions
CE=1000V, VEB=2V
V
CB=1000V, Emitter open
V
EB=7V, Collector open
V
I
C=200A, IB=270mA
I
C=–200A (diode forward voltage)
C=200A, VCE=4.0V
I
CC=600V, IC=200A IB1=0.4A, –IB2=4.0A
V
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Min.
—
—
—
—
—
—
750
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
4.0
4.0
200
4.0
4.0
1.8
—
2.5
15
3.0
0.08
0.35
0.04
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
Loading...