QM200DY-24B
MITSUBISHI TRANSISTOR MODULES
QM200DY-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
• IC Collector current ........................ 200A
• V
CEX Collector-emitter voltage ......... 1200V
• h
FE DC current gain.............................750
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, CVCF, Inverters, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
112
93±
0.25
25 25 21.5
17
26
4–φ6.5
31MAX.
6615
1
C1E2C2E1
B1XB2X
5
14
17817817
3 – M6
1
LABEL
B2E2B1 E1
85
Tab#110, t=0.5
2.8
8.5MIN.
21
(7)
6
15
6
B2X
C2E1
0.25
70±
89
B2
E2
C1
E2
B1X
E1
B1
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
Conditions
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M6
Mounting screw M6
Typical value
MITSUBISHI TRANSISTOR MODULES
QM200DY-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
Ratings
1200
1200
1200
7
200
200
1560
10
2000
–40~+150
–40~+125
2500
1.96~2.94
20~30
1.96~2.94
20~30
870
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Parameter
Test conditions
CE=1200V, VEB=2V
V
CB=1200V, Emitter open
V
EB=7V, Collector open
V
I
C=200A, IB=270mA
I
C=–200A (diode forward voltage)
C=200A, VCE=4.0V
I
CC=600V, IC=200A, IB1=0.4A, –IB2=4.0A
V
Transistor part (per 1/2 module)
Diode part (per 1/2 module
Conductive grease applied (per 1/2 module)
Min.
—
—
—
—
—
—
750
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
4.0
4.0
200
4.0
4.0
1.8
—
2.5
15
3.0
0.08
0.35
0.04
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
PERFORMANCE CURVES
MITSUBISHI TRANSISTOR MODULES
QM200DY-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
500
Tj=25°C
C (A)
400
300
IB=4.0A
IB=2.0A
200
100
COLLECTOR CURRENT I
0
01 234 5
IB=8.0A
IB=1.0A
IB=0.4A
10
FE
10
DC CURRENT GAIN h
10
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
2
7
5
4
3
2
1
7
5
4
VCE=4V
3
2
0
10
Tj=25°C
j
=125°C
T
–1
23457010 23457110
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
B (A)
BASE CURRENT I
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10
3.0 5.04.64.23.83.4
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
VCE=4.0V
Tj=25°C
, VBE (sat) (V)SWITCHING TIME t
CE (sat)
10
SATURATION VOLTAGE V
10
10
–1
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
1
7
5
4
V
3
2
0
7
5
4
3
IB=270mA
2
10 23457210 23457310
Tj=25°C
j
=125°C
T
1
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
BE(sat)
VCE=10V
V
BE(sat)
VCE (sat) (V)
VOLTAGE
COLLECTOR-EMITTER SATURATION
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
5
4
IC=300A
3
IC=200A
2
IC=100A
1
Tj=25°C
0
10
Tj=125°C
–2
BASE CURRENT I
10
–1
0
10
75327532
32
B (A) COLLECTOR CURRENT IC (A)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
2
10
V
CC
=600V
7
5
IB1=0.4A
B2
=4.0A
–I
3
2
1
10
on, ts, tf (µs)
7
5
3
2
0
10
7
5
3
2
–1
10
1
10
75
1
10 23457 23457310
10
2
t
s
t
f
t
on
Tj=25°C
Tj=125°C
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM200DY-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
REVERSE BIAS SAFE OPERATING AREA
CURRENT (TYPICAL)
3
10
7
5
3
(µs)
2
s, tf
2
10
7
5
3
2
1
VCC=600V
10
7
I
B1=0.4A
5
I
10
3
2
0
10
C=200A
–1
SWITCHING TIME t
ts
tf
Tj=25°C
Tj=125°C
23457 23457110
10
0
400
C (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –I
300
IB2=–8A
200
100
COLLECTOR CURRENT I
Tj=125°C
0
0 400 800 1200 1600
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
3
10
7
5
3
C (A)
2
2
10
7
5
3
2
1
10
7
5
3
COLLECTOR CURRENT I
2
0
10
10
DC
TC=25°C
NON-REPETITIVE
0
10
1
COLLECTOR-EMITTER VOLTAGE V
1ms
10
50µs
200µs
100µs
2
3
10
753275327532
CE (V) CASE TEMPERATURE TC (°C)
100
90
80
70
60
50
40
COLLECTOR
DISSIPATION
30
20
10
0
0 20 60 100 120 16040 80 140
IB2=–4A
SECOND
BREAKDOWN
AREA
Zth (j–c) (°C/ W)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
0
10
0.10
1
10
7532
0.08
0.06
0.04
0.02
0
10
–3
10
–2
10
TIME (s)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
3
C (A)
10
Tj=25°C
7
Tj=125°C
5
4
3
2
2
10
7
5
4
3
2
1
–1
0
10
753275327532
10
0.4 2.42.01.61.20.8
COLLECTOR-EMITTER REVERSE VOLTAGE
CEO (V)
–V
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM200DY-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
2000
1600
1200
CSM (A)
–I
800
400
0
SURGE COLLECTOR REVERSE CURRENT
10
0
10
1
7543275432
10
2
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
3
10
7
VCC=600V
5
I
B1=0.4A
3
–I
B2=4A
2
2
10
7
5
3
2
(A), Qrr (µc)
1
Irr
10
7
5
3
2
0
10
1
10
23457 23457310
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT I
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
0.40
10
0
7532
10
1
2
7534
0.32
0.24
10
2
10
7
5
3
2
1
10
7
5
3
2
10
7
5
Tj=25°C
Tj=125°C
2
F (A)
3
2
10
rr (µs)
t
0
–1
0.16
Zth (j–c) (°C/ W)
0.08
0
10
–3
10
–2
10
–1
0
10
753275327532
TIME (s)
Feb.1999
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