Mitsubishi QM200DY-24 Datasheet
QM200DY-24
MITSUBISHI TRANSISTOR MODULES
QM200DY-24
HIGH POWER SWITCHING USE
INSULATED TYPE
• IC Collector current ........................ 200A
• V
CEX Collector-emitter voltage ......... 1200V
• h
FE DC current gain...............................75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo dvives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
113
21.5
2
B
2
E
1
C
1
E
1
B
Tab#110, t=0.5
B2X
B
2
E
2
6
15
70
90
6
8
2E1
C
B1X
E
2
C
1
E
1
B
1
14
5.5
4–φ6.5
6
15
6
3–M6
25 25
B
2
XB
C2E
1
1
X
17817817
E
93
2
31
LABEL
6.5
21
7
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
Conditions
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M6
Mounting screw M6
Typical value
MITSUBISHI TRANSISTOR MODULES
QM200DY-24
HIGH POWER SWITCHING USE
INSULATED TYPE
Ratings
1200
1200
1200
7
200
200
1560
10
2000
–40~+150
–40~+125
2500
1.96~2.94
20~30
1.96~2.94
20~30
870
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
V
CE=1200V, VEB=2V
CB=1200V, Emitter open
V
EB=7V
V
I
C=200A, IB=4A
–I
C=200A (diode forward voltage)
C=200A, VCE=5V
I
CC=600V, IC=200A, IB1=–IB2=4A
V
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Test conditions
Min.
—
—
—
—
—
—
75
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
4.0
4.0
300
3.0
3.5
1.8
—
3.0
15
3.0
0.08
0.35
0.04
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
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