Mitsubishi QM15TG-9B Datasheet
QM15TG-9B
MITSUBISHI TRANSISTOR MODULES
QM15TG-9B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
• IC Collector current .......................... 15A
• V
CEX Collector-emitter voltage ........... 500V
• h
FE DC current gain.............................250
• Insulated Type
APPLICATION
Air conditioner, Small to medium size inverters
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
88
2–φ5.4
Tab#250,
t=0.8
25
39
Tab#110,
2–R6
6
26.5
16
t=0.5
6.5
P
BuP
EuP
U
BuN
BvP
EvP
BvN
BwP
V
EwP
W
BwN
16
17
8 8 8 8 8 16.5
BuP EuP BvP EvP BwP EwP
P
N
BuN BvN BwN E(–)
16 16 16 16.5
VU
76
64
LABEL
W
N E(–)
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
Conditions
MITSUBISHI TRANSISTOR MODULES
QM15TG-9B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Ratings
450
500
500
7
15
15
83
1
150
–40~+150
–40~+125
2000
1.47~1.96
15~20
70
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
V
CE=500V, VEB=2V
CB=500V, Emitter open
V
EB=7V
V
I
C=15A, IB=60mA
–I
C=15A (diode forward voltage)
C=15A, VCE=2V
I
CC=250V, IC=15A, IB1=90mA, –IB2=0.3A
V
Transistor part (per1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Test conditions
Min.
—
—
—
—
—
—
250
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
40
2.0
2.5
1.5
—
1.5
10
2.0
1.5
2.5
0.55
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
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