Mitsubishi QM15TB-2H Datasheet
QM15TB-2H
MITSUBISHI TRANSISTOR MODULES
QM15TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
• IC Collector current .......................... 15A
• V
CEX Collector-emitter voltage ......... 1000V
• h
FE DC current gain...............................75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, CVCF, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
107
P
BuP
EuP
BuN
EuN
N
U
φ1.65
BvP
EvP
V
BvN
EvN
Fig. 1
8
6.35 2.8
Fig. 2
BwP
EwP
W
BwN
EwN
3.8
φ1.2
45
21
Tab#110, t=0.5 (Fig. 2)
81
20 21.5 21.5 17.5
BuP EuP BvP EvP BwPEwP
O
P
U
EuN BvN
93
VW
EvN BwN
N
O
BuN
7.5 14 7.5 14 7.5 16
2–φ5.5
18
EwN
Tab#250, t=0.8 (Fig. 1)
30
28.2
LABEL
17.5
7.5
3.4
7.95
1
5.5
7.1
1
Note: All Transistor Units are 3-Stage Darlingtons.
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
Conditions
MITSUBISHI TRANSISTOR MODULES
QM15TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Ratings
1000
1000
1000
7
15
15
150
1
150
–40~+150
–40~+125
2500
1.47~1.96
15~20
230
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
V
CE=1000V, VEB=2V
CB=1000V, Emitter open
V
EB=7V
V
I
C=15A, IB=0.3A
–I
C=15A (diode forward voltage)
C=15A, VCE=2.8V/5V
I
CC=600V, IC=15A, IB1=–IB2=0.3A
V
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Test conditions
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
2.0
100
2.5
3.5
1.5
—
2.5
15
3.0
0.8
1.2
0.35
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
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