Mitsubishi QM15KD-HB Datasheet

MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
IC Collector current .......................... 15A
V
CEX Collector-emitter voltage ........... 600V
h
FE DC current gain............................. 250
Insulated Type
UL Recognized Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders.
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
R6
18
(24.45)
11 11 11
P
K
A
T
S
12.5
BuP BvP BwP
U
R
BuN
18 18
93
110
LABEL
10.5 10.5 18.5
VW
N
BwN
BvN
15
2–φ5.5
K
P
30
42
9
R
S
8
(23.6)
15
T
A
BuP
BuN
BvP
U
V
BvN
BwP W
BwN
N
6.5
Tab#110, t=0.5 Tab#250, t=0.8
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Inverter part, Tj=25°C)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current (forward diode current)
Parameter
Conditions
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
ABSOLUTE MAXIMUM RATINGS (Converter part, Tj=25°C)
Symbol
RRM
V
VRSM
Ea
IO
IFSM
2
t
I
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
2
t
I
for fusing
Parameter
Conditions
Three phase full wave rectifying circuit, T
One half cycle at 60 Hz, peak value
Value for one cycle of surge current
MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Ratings
600
600
600
7
15
15
76
1
150
Ratings
800
900
220
c=79°C
30
300
375
Unit
W
Unit
A
V
V
V
V
A
A
A
A
V
V
V
A
A
2
s
ABSOLUTE MAXIMUM RATINGS (Common)
Symbol
j
T
Tstg
Viso
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Parameter
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
ELECTRICAL CHARACTERISTICS (Inverter part, Tj=25°C)
Symbol
CEX
I
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance (junction to case)
Contact thermal resistance (case to fin)
Parameter
V
CE=600V, VEB=2V
CB=600V, Emitter open
V
EB=7V
V
I
C=15A, IB=60mA
–I
C=15A (diode forward voltage)
C=15A, VCE=2V
I
CC=300V, IC=15A, IB1=90mA,–IB2=0.3A
V
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied
Conditions
Test conditions
Min.
250
Ratings
–40~150
–40~125
2500
1.47~1.96
15~20
125
Limits
Typ.
Max.
1.0
1.0
40
2.0
2.5
1.5
1.5
10
2.0
1.65
2.8
0.35
Unit
°C °C
V
N·m
kg·cm
g
Unit
mA
mA
mA
V
V
V
µs µs
µs °C/W °C/W
°C/W
ELECTRICAL CHARACTERISTICS (Converter part, Tj=25°C)
Symbol
I
RRM
VFM
Rth (j-c)
Rth (c-f)
Parameter
Repetitive peak reverse current
Forward voltage drop
Thermal resistance
Contact thermal resistance
V
R=VRRM, Tj=150°C
F=30A
I
Junction to case
Case to fin, conductive grease applied
Test conditions
Min.
Limits
Typ.
Max.
5.0
1.3
0.9
0.35
Unit
mA
V
°C/W °C/W
Feb.1999
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