QM15KD-HB
MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
• IC Collector current .......................... 15A
• V
CEX Collector-emitter voltage ........... 600V
• h
FE DC current gain............................. 250
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders.
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
R6
18
(24.45)
11 11 11
P
K
A
T
S
12.5
BuP BvP BwP
U
R
BuN
18 18
93
110
LABEL
10.5 10.5 18.5
VW
N
BwN
BvN
15
2–φ5.5
K
P
30
42
9
R
S
8
(23.6)
15
T
A
BuP
BuN
BvP
U
V
BvN
BwP
W
BwN
N
6.5
Tab#110, t=0.5 Tab#250, t=0.8
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Inverter part, Tj=25°C)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Parameter
Conditions
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
ABSOLUTE MAXIMUM RATINGS (Converter part, Tj=25°C)
Symbol
RRM
V
VRSM
Ea
IO
IFSM
2
t
I
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
2
t
I
for fusing
Parameter
Conditions
Three phase full wave rectifying circuit, T
One half cycle at 60 Hz, peak value
Value for one cycle of surge current
MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Ratings
600
600
600
7
15
15
76
1
150
Ratings
800
900
220
c=79°C
30
300
375
Unit
W
Unit
A
V
V
V
V
A
A
A
A
V
V
V
A
A
2
s
ABSOLUTE MAXIMUM RATINGS (Common)
Symbol
j
T
Tstg
Viso
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
ELECTRICAL CHARACTERISTICS (Inverter part, Tj=25°C)
Symbol
CEX
I
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Parameter
V
CE=600V, VEB=2V
CB=600V, Emitter open
V
EB=7V
V
I
C=15A, IB=60mA
–I
C=15A (diode forward voltage)
C=15A, VCE=2V
I
CC=300V, IC=15A, IB1=90mA,–IB2=0.3A
V
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied
Conditions
Test conditions
Min.
—
—
—
—
—
—
250
—
—
—
—
—
—
Ratings
–40~150
–40~125
2500
1.47~1.96
15~20
125
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
40
2.0
2.5
1.5
—
1.5
10
2.0
1.65
2.8
0.35
Unit
°C
°C
V
N·m
kg·cm
g
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Converter part, Tj=25°C)
Symbol
I
RRM
VFM
Rth (j-c)
Rth (c-f)
Parameter
Repetitive peak reverse current
Forward voltage drop
Thermal resistance
Contact thermal resistance
V
R=VRRM, Tj=150°C
F=30A
I
Junction to case
Case to fin, conductive grease applied
Test conditions
Min.
—
—
—
—
Limits
Typ.
—
—
—
—
Max.
5.0
1.3
0.9
0.35
Unit
mA
V
°C/W
°C/W
Feb.1999
PERFORMANCE CURVES
MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
50
Tj=25°C
40
C (A)
30
20
10
COLLECTOR CURRENT I
0
012345
IB=0.6A
IB=200mA
IB=60mA
IB=40mA
IB=20mA
FE
10
10
DC CURRENT GAIN h
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
3
Tj=25°C
2
Tj=125°C
3
7
5
4
3
VCE=2.0V
2
2
7
5
4
3
0
10 23457110 23457210
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
B (A)
BASE CURRENT I
10
10
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
0
VCE=2.0V
7
T
j=25°C
5
4
3
2
–1
7
5
4
3
2
10
, VBE (sat) (V)SWITCHING TIME t
CE (sat)
10
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
1
IB=60mA
7
Tj=25°C
5
Tj=125°C
4
3
2
0
VBE(sat)
7
5
4
VCE(sat)
3
2
VCE=5.0V
–2
10
1.2 1.6 2.0 2.4 2.8 3.2
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
5
4
3
VCE (sat) (V)
2
VOLTAGE
1
10
IC=5A
–2
COLLECTOR-EMITTER SATURATION
0
10
–3
BASE CURRENT I
–1
10
0
10 23457110 23457210
SATURATION VOLTAGE V
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
1
Tj=25°C
Tj=125°C
10
7
ts
5
4
3
2
on, ts, tf (µs)
0
10
tf
7
IC=15A
5
4
3
IC=10A
–1
10
B (A) COLLECTOR CURRENT IC (A)
0
10
753275327532
2
–1
10
0
10 23457110 23457210
V
CC=300V
I
B1=90mA
IB2=–300mA
Tj=25°C
Tj=125°C
ton
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
REVERSE BIAS SAFE OPERATING AREA
CURRENT (TYPICAL)
2
10
CC
=300V
V
7
I
B1
=90mA
5
IC=15A
4
(µs)
s, tf
10
Tj=25°C
3
Tj=125°C
2
t
1
s
7
5
4
t
f
3
SWITCHING TIME t
2
0
10
–2
10
23457 23457
10
–1
10
0
32
28
C (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –I
24
20
16
12
COLLECTOR CURRENT I
8
4
0
0 200 400 800100 300
IB2=–3.0A
500 600 700
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
2
10
TC=25°C
7
5
NON-REPETITIVE
3
C (A)
2
1
10
7
5
3
2
0
10
7
5
3
COLLECTOR CURRENT I
2
–1
10
0
10
DC
10
1
COLLECTOR-EMITTER VOLTAGE V
t
w
=10ms
10
100µs
500µs
1ms
2
3
10
753275327532
CE (V) CASE TEMPERATURE TC (°C)
100
90
80
70
60
COLLECTOR
50
DISSIPATION
40
30
20
10
0
0 20 60 100 120 16040 80 140
Tj=125°C
IB2=–0.5A
SECOND
BREAKDOWN
AREA
Zth (j–c) (°C/ W)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
2.0
10
0
1
10
7532
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
0
–3
10
–2
10
–1
TIME (s)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
2
10
C (A)
7
5
4
Tj=25°C
Tj=125°C
3
2
1
10
7
5
4
3
2
0
0
10
753275327532
10
0.4 0.8 1.2 1.6 2.0 2.4
COLLECTOR-EMITTER REVERSE VOLTAGE
CEO (V)
–V
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
200
180
160
140
120
100
CSM (A)
–I
80
60
40
20
0
0
10
SURGE COLLECTOR REVERSE CURRENT
75432
10 75432
1
10
2
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
1
10
7
5
4
I
rr
3
2
0
10
(A), Qrr (µc)
Irr
Q
rr
7
5
t
rr
4
3
2
–1
10
0
10 23457110 23457210
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT I
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
3.2
10
0
1
10
7532
2.8
2.4
2.0
1.6
1.2
Zth (j–c) (°C/ W)
0.8
0.4
10
0
–3
10
–2
10
–1
0
10
753275327532
TIME (s)
V
CC
=300V
B1
=90mA
I
IB2=–300mA
Tj=25°C
Tj=125°C
F (A)
1
10
0
10
–1
10
rr (µs)
t
Feb.1999
PERFORMANCE CURVES (Diode parts)
MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
MAXIMUM FORWARD CHARACTERISTIC
3
10
7
Tj=25°C
5
3
F (A)
2
2
10
7
5
3
2
1
10
7
5
3
FORWARD CURRENT I
2
0
10
0.8 1.2 1.6 2.0 2.4
FORWARD VOLTAGE DROP VF (V)
MAXIMUM POWER DISSIPATION ALLOWABLE CASE TEMPERATURE
100
RESISTIVE, INDUCTIVE LOAD
80
60
ALLOWABLE SURGE (NON-REPETITIVE)
FORWARD CURRENT
500
400
300
FSM (A)
200
CURRENT I
100
0
SURGE (NON-REPETITIVE) FORWARD
10
0
10 75432
75432
1
CONDUCTION TIME (CYCLES AT 60H
VS. DC OUTPUT CURRENT
160
RESISTIVE, INDUCTIVE LOAD
°C)
140
C (
120
Z)
10
2
40
20
POWER DISSIPATION P (W)
0
0 8 16 24 32 40
DC OUTPUT CURRENT I
100
80
CASE TEMPERATURE T
60
0 8 16 24 32 40
O (A) DC OUTPUT CURRENT IO (A)
Feb.1999
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