Mitsubishi QM15HA-H Datasheet

MITSUBISHI TRANSISTOR MODULES
QM15HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
IC Collector current .......................... 15A
V
CEX Collector-emitter voltage ........... 600V
h
FE DC current gain............................... 75
Insulated Type
UL Recognized Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
7.03.7
φ4.2
A
C
0.4
0.8
0.8
0.5
4.75
6.35
E
φ1.7 φ2.4 φ1.7
16.6
19.5
30.2
39.0
7.0 7.0
B
φ1.3 φ2.0
4.2
24.0
B
B
6.35
4.75
C
E
φ2.4
LABEL
3.2
24.0
Fig. A
Fig. B
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current (forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Parameter
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Mounting screw M4
Typical value
Conditions
MITSUBISHI TRANSISTOR MODULES
QM15HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Ratings
600
600
600
7
15
15
100
0.9
150
–40~+150
–40~+125
2500
0.98~1.47
10~15
25
Unit
V
V
V
V
A
A
W
A
A
°C °C
V
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance (junction to case)
Contact thermal resistance (case to fin)
V
CE=600V, VEB=2V
CB=600V, Emitter open
V
EB=7V
V
I
C=15A, IB=0.3A
–I
C=15A (diode forward voltage)
C=15A, VCE=2V/5V
I
CC=300V, IC=15A, IB1=–IB2=0.3A
V
Transistor part
Diode part
Conductive grease applied
Test conditions
Min.
50/100
Limits
Typ.
Max.
1.0
1.0
80
2.0
2.5
1.5
1.5
8.0
2.0
1.2
2.5
0.4
Unit
mA
mA
mA
V
V
V
µs µs
µs °C/W °C/W
°C/W
Feb.1999
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