Mitsubishi QM15DX-2H Datasheet

MITSUBISHI TRANSISTOR MODULES
QM15DX-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
IC Collector current .......................... 15A
V
CEX Collector-emitter voltage ......... 1000V
h
FE DC current gain...............................75
Insulated Type
UL Recognized Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
92
1
B
Tab#250,
t=0.8
80
B
2
B
1
CE
E
10.5 10.5 10.5 10.5
0.8
8.0 8.35
LABEL
B
φ5.5
35
(4.5)
(21)
ECCE
30
19.5
C
φ1.65
7.95
3.4
2
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V VCEX VCBO VEBO IC –IC PC IB
–ICSM
Tj Tstg Viso
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current
Surge collector reverse current (forward diode current)
Junction temperature Storage temperature Isolation voltage
Mounting torque
Weight
Parameter
C=1A, VEB=2V
I
EB=2V
V Emitter open Collector open DC DC (forward diode current)
C=25°C
T DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
Conditions
MITSUBISHI TRANSISTOR MODULES
QM15DX-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Ratings
1000 1000 1000
7 15 15
150
1
150
–40~+150 –40~+125
2500
1.47~1.96 15~20
155
Unit
V V V V A A
W
A
A
°C °C
V
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
Switching time
Thermal resistance (junction to case)
Contact thermal resistance (case to fin)
V
CE=1000V, VEB=2V CB=1000V, Emitter open
V
EB=7V
V
I
C=15A, IB=0.3A
–I
C=15A (diode forward voltage)
C=15A, VCE=2.8V/5V
I
CC=600V, IC=15A, IB1=–IB2=0.3A
V
Transistor part (per 1/2 module) Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Test conditions
Min.
— — — — — —
75/100
— — — — —
Limits
Typ.
— — — — — — — — — — — —
Max.
1.0
1.0
100
2.5
3.5
1.5 —
2.5 15
3.0
0.8
1.2
0.25
Unit
mA mA mA
V V V
µs µs
µs °C/W °C/W
°C/W
Feb.1999
Loading...
+ 3 hidden pages